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31. 发明授权

US07910489B2 Infinitely selective photoresist mask etch 有权
标题翻译：无限选择性光刻胶掩模蚀刻
公开(公告)号：US07910489B2
公开(公告)日：2011-03-22
申请号：US11357548
申请日：2006-02-17
申请人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
发明人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

32. 发明授权

US07442649B2 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US07442649B2
公开(公告)日：2008-10-28
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

33. 发明申请

US20070193973A1 Infinitely selective photoresist mask etch 有权
标题翻译：无限选择性光刻胶掩模蚀刻
公开(公告)号：US20070193973A1
公开(公告)日：2007-08-23
申请号：US11357548
申请日：2006-02-17
申请人： Ji Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. Sadjadi
发明人： Ji Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. Sadjadi
IPC分类号： C23F1/00 , C03C15/00
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

34. 发明授权

US07250371B2 Reduction of feature critical dimensions 有权
标题翻译：减少功能关键尺寸
公开(公告)号：US07250371B2
公开(公告)日：2007-07-31
申请号：US10648953
申请日：2003-08-26
申请人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
发明人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
IPC分类号： H01L21/311
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

35. 发明申请

US20060266478A1 Critical dimension reduction and roughness control 失效
公开(公告)号：US20060266478A1
公开(公告)日：2006-11-30
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

36. 发明授权

US09732457B2 Washing method and washing machine 有权
公开(公告)号：US09732457B2
公开(公告)日：2017-08-15
申请号：US12976390
申请日：2010-12-22
申请人： Changoh Kim , Jaehyun Kim , Jaewon Chang , Jongmin Lee , Sangheon Lee , Youngho Kim
发明人： Changoh Kim , Jaehyun Kim , Jaewon Chang , Jongmin Lee , Sangheon Lee , Youngho Kim
IPC分类号： D06F35/00 , D06F33/02 , D06F39/00 , D06F39/08
CPC分类号： D06F35/006 , D06F33/02 , D06F35/005 , D06F35/007 , D06F39/003 , D06F39/083 , D06F39/088
摘要： Provided are a washing method and washing machine. In the washing method, an eco-rinsing process where a drum rotates in a state where at least a portion of laundry is pressed against the inner wall of the drum and wash water is sprayed into the drum is performed. A spinning process where the spraying of the wash water is stopped and the wash water is removed from the laundry by accelerating the drum is performed. Here, at least a portion of the laundry remains pressed against the wall of the drum in the eco-rinsing process and the spinning process.

37. 发明授权

US08357434B1 Apparatus for the deposition of a conformal film on a substrate and methods therefor 有权
标题翻译：用于在基底上沉积保形膜的装置及其方法
公开(公告)号：US08357434B1
公开(公告)日：2013-01-22
申请号：US11304223
申请日：2005-12-13
申请人： Dae-han Choi , Jisoo Kim , Eric Hudson , Sangheon Lee , Conan Chiang , S. M. Reza Sadjadi
发明人： Dae-han Choi , Jisoo Kim , Eric Hudson , Sangheon Lee , Conan Chiang , S. M. Reza Sadjadi
IPC分类号： H05H1/24
CPC分类号： H01L21/0338 , H01J37/32082 , H01J37/32449 , H01J37/32724 , H01J37/32834
摘要： A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.
摘要翻译：公开了一种在等离子体处理系统的等离子体处理室中的基板上沉积保形膜的方法，该基板设置在卡盘上，该卡盘与冷却装置连接。该方法包括在第一压力下将第一气体混合物流入等离子体处理室，其中第一气体混合物至少包括碳，并且其中第一气体混合物具有冷凝温度。该方法还包括使用冷却装置将夹盘冷却至冷凝温度以下，从而允许至少一些第一气体混合物在基板的表面上冷凝。该方法还包括从处理室排出第一气体混合物; 将第二气体混合物流入等离子体处理室，第二气体混合物的组成与第一气体混合物不同; 并冲击等离子体以形成保形膜。

38. 发明申请

US20120007503A1 Plasma Generating Apparatus 审中-公开
标题翻译：等离子发生装置
公开(公告)号：US20120007503A1
公开(公告)日：2012-01-12
申请号：US13177016
申请日：2011-07-06
申请人： Hyungjoon Kim , Sang Jean Jeon , Yury Tolmachev , Vasily Pashkovskiy , Sangheon Lee , Yunkwang Jeon
发明人： Hyungjoon Kim , Sang Jean Jeon , Yury Tolmachev , Vasily Pashkovskiy , Sangheon Lee , Yunkwang Jeon
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/3211 , H05H2001/4667
摘要： At least two antenna coils are electrically connected in parallel to each other to generate uniform high density plasma, and capacitors are installed between the respective antenna coils and a ground to minimize an antenna voltage, thereby minimizing the effect of capacitive plasma coupling due to the antenna voltage.
摘要翻译：至少两个天线线圈彼此并联电连接以产生均匀的高密度等离子体，并且电容器安装在各个天线线圈和地之间以最小化天线电压，从而最小化由天线引起的电容等离子体耦合的影响电压。

39. 发明申请

US20110146004A1 WASHING METHOD AND WASHING MACHINE 有权
公开(公告)号：US20110146004A1
公开(公告)日：2011-06-23
申请号：US12976390
申请日：2010-12-22
申请人： Changoh KIM , Jaehyun Kim , Jaewon Chang , Jongmin Lee , Sangheon Lee , Youngho Kim
发明人： Changoh KIM , Jaehyun Kim , Jaewon Chang , Jongmin Lee , Sangheon Lee , Youngho Kim
IPC分类号： D06L1/20 , D06F25/00
CPC分类号： D06F35/006 , D06F33/02 , D06F35/005 , D06F35/007 , D06F39/003 , D06F39/083 , D06F39/088
摘要： Provided are a washing method and washing machine. In the washing method, an eco-rinsing process where a drum rotates in a state where at least a portion of laundry is pressed against the inner wall of the drum and wash water is sprayed into the drum is performed. A spinning process where the spraying of the wash water is stopped and the wash water is removed from the laundry by accelerating the drum is performed. Here, at least a portion of the laundry remains pressed against the wall of the drum in the eco-rinsing process and the spinning process.

40. 发明授权

US07560388B2 Self-aligned pitch reduction 有权
标题翻译：自对准螺距减小
公开(公告)号：US07560388B2
公开(公告)日：2009-07-14
申请号：US11291303
申请日：2005-11-30
申请人： Jisoo Kim , Sangheon Lee , Daehan Choi , S. M. Reza Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Daehan Choi , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0338
摘要： A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
摘要翻译：提供了一种在电介质层中提供特征的方法。在电介质层上形成牺牲层。一组牺牲层特征被蚀刻到牺牲层中。通过牺牲层将介电层特征的第一组蚀刻到介电层中。第一组介电层特征和一组牺牲层特征用填充材料填充。牺牲层被去除。填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。去除填充材料和收缩侧壁沉积。

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