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    • 37. 发明授权
    • Metal oxide semiconductor field effect transistor
    • 金属氧化物半导体场效应晶体管
    • US5451807A
    • 1995-09-19
    • US230226
    • 1994-04-20
    • Koichi Fujita
    • Koichi Fujita
    • H01L21/336H01L29/10H01L29/78H01L29/772
    • H01L29/66659H01L29/1045H01L29/1083H01L29/7835
    • A field effect transistor includes a gate electrode disposed on a first conductivity type semiconductor substrate via an insulating film, a second conductivity type region having a first dopant impurity concentration region in the substrate at the drain side of the gate electrode contacting the insulating film, a second conductivity type region in the substrate having a higher dopant impurity concentration than the first dopant impurity concentration at the source side of the gate electrode contacting the insulating film, and a first conductivity type region in the substrate having a higher dopant impurity concentration than the substrate and surrounding the source region in the substrate. The ON-resistance of the transistor is reduced. The first conductivity type region improves the drain-source breakdown voltage, suppresses variations in the threshold voltage, and reduces the gate-source and gate-drain capacitances.
    • 场效应晶体管包括通过绝缘膜设置在第一导电类型半导体衬底上的栅电极,在与绝缘膜接触的栅电极的漏极侧的衬底中具有第一掺杂杂质浓度区域的第二导电类型区域, 所述衬底中的第二导电类型区域具有比与所述绝缘膜接触的所述栅电极的源极侧的所述第一掺杂剂杂质浓度高的掺杂剂杂质浓度以及所述衬底中具有比所述衬底高的掺杂剂杂质浓度的第一导电类型区域 并围绕衬底中的源极区域。 晶体管的导通电阻降低。 第一导电类型区域提高了漏极 - 源极击穿电压,抑制了阈值电压的变化,并且降低了栅极 - 源极和栅极 - 漏极电容。
    • 38. 发明授权
    • Vehicle air bag apparatus
    • 车用空气袋装置
    • US5135254A
    • 1992-08-04
    • US686623
    • 1991-04-18
    • Mitsuhiko MasegiAkira KondoMasahito MutohKoichi Fujita
    • Mitsuhiko MasegiAkira KondoMasahito MutohKoichi Fujita
    • B60R21/16B60R21/01
    • B60R21/017B60R21/0173
    • Air bags are located at different positions within a vehicle. Squibs serve to fire and activate the air bags respectively. An acceleration detecting device is provided in common to the squibs for detecting an acceleration of the vehicle upon a collision of the vehicle and executing a switching operation in response to the detected vehicle acceleration. Constant-current circuits supplied with an electric power from a vehicle battery feed constant electric currents for a firing operation to the squibs respectively in response to the switching operation of the acceleration detecting device. An energy storage device serves to feed a backup electric power to the constant-current circuits when the supply of the electric power from the vehicle battery is cut off. Each of the constant-current circuits includes a first transistor for feeding an electric current to the related squib, a first resistor for detecting a level of the electric current fed to the squib, a second transistor conducting an electric current with a level which depends on the electric current level detected by the first resistor, and a second resistor for generating a voltage which depends on the electric current conducted by the second transistor and for controlling the first transistor in response to the generated voltage.
    • 39. 发明申请
    • PROTECTION DIODE
    • 保护二极管
    • US20130264648A1
    • 2013-10-10
    • US13739042
    • 2013-01-11
    • Koichi Fujita
    • Koichi Fujita
    • H01L27/02
    • H01L29/7808H01L27/0248H01L27/0255
    • A protection diode includes: a semiconductor substrate; a well region of a first conductivity type in the semiconductor substrate; a gate side diffusion region of a second conductivity type in the semiconductor substrate and joined to the well region; a grounding side diffusion region of the second conductivity type in the semiconductor substrate, separated from the gate side diffusion region, and joined to the well region; a gate side electrode connected between a gate of a transistor and the gate side diffusion region; and a grounding electrode connected to the grounding side diffusion region. Dopant impurity concentration in the grounding side diffusion region is lower than dopant impurity concentration in the gate side diffusion region.
    • 保护二极管包括:半导体衬底; 半导体衬底中的第一导电类型的阱区; 半导体衬底中的第二导电类型的栅极侧扩散区,并连接到阱区; 半导体衬底中的与栅极侧扩散区分离的第二导电类型的接地侧扩散区,并与阱区连接; 连接在晶体管的栅极和栅极侧扩散区之间的栅极电极; 以及与接地侧扩散区域连接的接地电极。 接地侧扩散区域中的掺杂剂杂质浓度低于栅极侧扩散区域中的掺杂剂杂质浓度。