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31. 发明授权

US4614689A Non-oxide-series-sintered ceramic body and method for forming conducting film on the surface of non-oxide-series-sintered ceramic body 失效
标题翻译：非氧化物系烧结陶瓷体及非氧化物系烧结体的表面形成导电膜的方法
公开(公告)号：US4614689A
公开(公告)日：1986-09-30
申请号：US603452
申请日：1984-04-24
申请人： Kazuo Ikeda , Akio Sayano , Shun-ichiro Tanaka
发明人： Kazuo Ikeda , Akio Sayano , Shun-ichiro Tanaka
IPC分类号： C04B41/88 , C04B41/50 , C04B41/87 , B05D5/12
CPC分类号： C04B41/009 , C04B41/5071 , C04B41/87 , C04B2111/94 , Y10T428/31
摘要： A non-oxide-series-sintered ceramic body, which has a conductive film on its surface and which permits a strong bond to a metal member, the conductive film comprising a metal silicide selected from the group consisting of molybdenum silicide and tungsten silicide.
摘要翻译：一种非氧化物系烧结陶瓷体，其表面上具有导电膜并且允许与金属构件的牢固结合，所述导电膜包括选自硅化钼和硅化钨的金属硅化物。

32. 发明授权

US4154910A Method for producing acrylamide polymers 失效
标题翻译：丙烯酰胺聚合物的制备方法
公开(公告)号：US4154910A
公开(公告)日：1979-05-15
申请号：US795522
申请日：1977-05-10
申请人： Katsutoshi Tanaka , Kazuo Ikeda
发明人： Katsutoshi Tanaka , Kazuo Ikeda
IPC分类号： C08F2/00 , C08F2/10 , C08F20/56 , C08J9/28
CPC分类号： C08J9/28 , C08F20/56 , C08J2333/26 , Y10S524/922
摘要： Concentrated aqueous solution of acrylamide or mixture of acrylamide and other vinyl monomer is polymerized in the presence of catalyst, and the polymerization solution is to be boiled by heat of polymerization in the course of polymerization.Obtained hydrous gels of acrylamide polymers are porous, water soluble and are easily dehydrated by conventional dehydration techniques.
摘要翻译：丙烯酰胺或丙烯酰胺和其他乙烯基单体的混合物的浓缩水溶液在催化剂存在下聚合，聚合溶液在聚合过程中通过聚合热进行煮沸。

33. 发明申请

US20110288766A1 NAVIGATION DEVICE, NAVIGATION METHOD, NAVIGATION PROGRAM, AND RECORDING MEDIUM 审中-公开
标题翻译：导航设备，导航方法，导航程序和记录介质
公开(公告)号：US20110288766A1
公开(公告)日：2011-11-24
申请号：US12865026
申请日：2008-01-29
申请人： Makoto Nagasawa , Kenji Kikui , Kumiko Shudo , Satoshi Sasaki , Kazuo Ikeda
发明人： Makoto Nagasawa , Kenji Kikui , Kumiko Shudo , Satoshi Sasaki , Kazuo Ikeda
IPC分类号： G01C21/36
CPC分类号： G01C21/3632 , G08G1/096861 , G09B29/106
摘要： A navigation apparatus that provides guidance along a route to a destination using a guidance image on which a plurality of guidance signs, respectively indicative of a guidance direction at a guidance point, are arranged in order of proximity to a current point, includes a setting unit that preliminarily sets a first given distance from the current point; an extracting unit that extracts a given guidance point on the route; a calculating unit that calculates a distance from the current point to the given guidance point extracted by the extracting unit; and a display control unit that when the distance to the given guidance point calculated by the calculating unit becomes equal to or less than the first given distance, changes a color of a guidance sign at the guidance point to a color different from an current display color.
摘要翻译：使用其上分别指示引导点的引导方向的多个引导符号以指导图像向目的地提供引导的导航装置按照靠近当前点的顺序排列，包括设置单元预先设定与当前点的第一个给定距离; 提取单元，其提取所述路线上的给定引导点; 计算单元，计算从提取单元提取的从当前点到给定引导点的距离; 以及显示控制单元，当所述计算单元计算出的与所述给定引导点的距离变得等于或小于所述第一给定距离时，将所述引导点处的引导符号的颜色改变为与当前显示颜色不同的颜色。

34. 发明授权

US07679474B2 Surface acoustic wave resonator, and surface acoustic wave filter 有权
标题翻译：表面声波谐振器和表面声波滤波器
公开(公告)号：US07679474B2
公开(公告)日：2010-03-16
申请号：US10580915
申请日：2005-01-06
申请人： Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
发明人： Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
IPC分类号： H03H9/25 , H03H9/145 , H03H9/64
CPC分类号： H03H9/14544 , H03H9/14582 , H03H9/6483
摘要： A surface acoustic wave resonator has a piezoelectric substrate (11), an IDT (13) formed of a plurality of electrode fingers (12) disposed on piezoelectric substrate (11), and reflectors (14) disposed near the opposite ends of IDT (13). The IDT (13) has a gradation region where the electrode finger pitch of the plurality of electrode fingers (12) at the opposite ends is different from the electrode finger pitch near the center of the IDT (13). In this gradation region, the electrode finger pitches are sequentially varied in the range from the electrode finger at the farthest end that is one end of the gradation region to the electrode finger lying at the other end of the gradation region. The electrode finger pitch of the electrode fingers at the farthest end that is one end of the gradation region is set to be 1 through 5% smaller than the electrode finger pitch near the center of the IDT (13).
摘要翻译：表面声波谐振器具有压电基板（11），由设置在压电基板（11）上的多个电极指（12）形成的IDT（13）和设置在IDT（13）的相对端附近的反射器）。 IDT（13）具有灰色区域，其中在相对端的多个电极指（12）的电极指间隔与IDT（13）的中心附近的电极指间隔不同。在该灰度区域中，电极指间隔在从作为灰度区域的一端的最远端的电极指与位于灰度区域的另一端的电极指的范围内依次变化。作为灰度区域的一端的最远端的电极指的电极指间距被设定为比IDT（13）的中心附近的电极指间隔小1〜5％。

35. 发明授权

US07646266B2 Surface acoustic wave resonator and surface acoustic wave filter using the same 有权
标题翻译：表面声波谐振器和表面声波滤波器使用相同
公开(公告)号：US07646266B2
公开(公告)日：2010-01-12
申请号：US11587538
申请日：2005-04-21
申请人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
发明人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
IPC分类号： H03H9/25 , H03H9/64
CPC分类号： H03H9/02559 , H03H9/6433 , H03H9/6496
摘要： A Q-factor of a resonator at a high frequency is improved. An insertion loss of a filter using such a resonator and steepness of the filter are improved. A plurality of surface acoustic wave resonators including an interdigital transducer and reflecting electrodes provided on both sides thereof are connected in parallel on a piezoelectric substrate. Resonance frequencies of the surface acoustic wave resonators are rendered equal among all the resonators connected in parallel. In this way, the Q-factor of the resonance can be improved. A surface acoustic wave filter using such surface acoustic wave resonators is formed in order to improve the insertion loss and the steepness.
摘要翻译：提高高频谐振器的Q因子。使用这种谐振器的滤波器的插入损耗和滤波器的陡度得到改善。包括叉指式换能器和设置在其两侧的反射电极的多个表面声波谐振器并联连接在压电基片上。在所有并联连接的谐振器中，声表面波谐振器的共振频率相等。以这种方式，可以提高谐振的Q因子。为了提高插入损耗和陡度，形成使用这样的表面声波谐振器的声表面波滤波器。

36. 发明授权

US06855637B2 Method for manufacturing surface acoustic wave device 有权
标题翻译：声表面波装置的制造方法
公开(公告)号：US06855637B2
公开(公告)日：2005-02-15
申请号：US10478479
申请日：2002-07-01
申请人： Kiyoharu Yamashita , Kazuo Ikeda , Shunichi Seki , Mitsuhiro Furukawa
发明人： Kiyoharu Yamashita , Kazuo Ikeda , Shunichi Seki , Mitsuhiro Furukawa
IPC分类号： H03H3/08 , H03H9/145 , H01L21/302 , H01L21/461
CPC分类号： H03H9/14538 , H03H3/08
摘要： Provided is a method of manufacturing surface acoustic wave (SAW) devices having a first conductive pattern and a second conductive pattern of different thicknesses on one piezoelectric substrate. Combination of a plurality of steps of forming metal films and etching steps allows accurate production of SAW devices having a plurality of electrodes of different thicknesses on one piezoelectric substrate.
摘要翻译：提供一种在一个压电基板上制造具有不同厚度的第一导电图案和第二导电图案的表面声波（SAW）器件的方法。组合形成金属膜的多个步骤和蚀刻步骤允许在一个压电基板上精确生产具有多个不同厚度的电极的SAW器件。

37. 发明授权

US06232657B1 Silicon nitride circuit board and semiconductor module 失效
标题翻译：氮化硅电路板和半导体模块
公开(公告)号：US06232657B1
公开(公告)日：2001-05-15
申请号：US09051477
申请日：1998-04-17
申请人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
发明人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
IPC分类号： H01L23053
CPC分类号： H01L23/15 , C04B35/584 , C04B37/021 , C04B37/025 , C04B37/026 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3813 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3865 , C04B2235/3878 , C04B2235/3886 , C04B2235/3891 , C04B2235/3895 , C04B2235/5445 , C04B2235/6565 , C04B2235/72 , C04B2235/77 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/062 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/407 , C04B2237/54 , C04B2237/68 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/86 , H01L23/3735 , H01L23/4006 , H01L24/32 , H01L24/48 , H01L2224/32225 , H01L2224/48227 , H01L2224/48472 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01039 , H01L2924/01057 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： There is provided a semiconductor module which comprises a high thermal conductive silicon nitride substrate 10 having a thermal conductivity of 60 w/m·k or more, a semiconductor element 7 mounted on this high thermal conductive silicon nitride substrate 10, metal circuit plates 3 which are bonded on the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate 10 and single metal plate 4a which is bonded to a side opposing to the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate and is bonded on an apparatus casing 9 or a mounting board. By this constitution, there can be provided a semiconductor module having a simple structure, which can be miniaturized, and having an improved structure strength and an excellent heat cycle resistance property without requiring a heat sink plate or the like.
摘要翻译：提供了一种半导体模块，其包括导热率为60w / mk以上的高导热氮化硅衬底10，安装在该高导热氮化硅衬底10上的半导体元件7，金属电路板3，在该高导热氮化硅衬底10的半导体元件安装侧和与该高导热氮化硅衬底的与半导体元件安装侧相对的一侧接合的单金属板4a并且接合在设备壳体 9或安装板。通过这种结构，可以提供一种具有简单结构的半导体模块，其可以小型化，并且具有改进的结构强度和优异的耐热循环性能，而不需要散热板等。

38. 发明授权

US6040039A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US6040039A
公开(公告)日：2000-03-21
申请号：US970811
申请日：1997-11-14
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B3/27
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.S of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.S .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译：本发明提供了一种氮化硅电路板，其中金属电路板与具有不小于60W / m K的热导率的高导热氮化硅衬底接合，其中高导热氮化硅衬底的厚度DS 并且金属电路板的厚度DM满足关系式DS

39. 发明授权

US5521810A Rectifying saturable reactor 失效
标题翻译：整流饱和电抗器
公开(公告)号：US5521810A
公开(公告)日：1996-05-28
申请号：US461550
申请日：1995-06-05
申请人： Sataro Yamaguchi , Hiroyuki Sasao , Hiroshi Hasegawa , Kazuo Ikeda
发明人： Sataro Yamaguchi , Hiroyuki Sasao , Hiroshi Hasegawa , Kazuo Ikeda
IPC分类号： H01F29/14 , H01F17/06 , H01F38/02 , H02M7/04
CPC分类号： H01F17/06 , H01F38/023 , H01F2017/065 , H01F2038/305
摘要： A rectifying saturable reactor generates a magnetic force in a magnetic iron core in response to a current that flows through an electronic circuit. The saturable reactor makes use of saturable magnetic flux in view of a hysteresis loop of a magnetic material for rectification and selects the saturated magnetic flux to be greater than an integrated value of a voltage applied to the rectifier in the rectifying circuit. In order to improve a rectifying performance, a no cut and one turn structure or an equivalent is introduced into a magnetic core for providing a hysteresis loop that varies as much as possible in magnetic induction.
摘要翻译：整流饱和电抗器响应于流过电子电路的电流而在磁铁芯中产生磁力。考虑到用于整流的磁性材料的磁滞回线，饱和电抗器利用可饱和磁通量，并且选择饱和磁通量大于整流电路中施加到整流器的电压的积分值。为了提高整流性能，将不切割和一匝结构或等效物引入到磁芯中，以提供在磁感应中尽可能多地变化的磁滞回线。

40. 发明授权

US5125557A Ceramics bonded product and method of producing the same 失效
标题翻译：陶瓷保税产品及其生产方法
公开(公告)号：US5125557A
公开(公告)日：1992-06-30
申请号：US726714
申请日：1991-07-01
申请人： Shun-ichiro Tanaka , Kazuo Ikeda , Akio Sayano
发明人： Shun-ichiro Tanaka , Kazuo Ikeda , Akio Sayano
IPC分类号： B23K1/19 , B23K20/00 , C04B37/00 , C04B37/02 , H05K1/03 , H05K3/38
CPC分类号： C04B37/026 , C04B37/006 , C04B2235/6581 , C04B2237/122 , C04B2237/124 , C04B2237/34 , C04B2237/343 , C04B2237/36 , C04B2237/366 , C04B2237/368 , C04B2237/407 , C04B2237/592 , C04B2237/64 , H05K1/0306 , H05K3/38
摘要： Disclosed is a ceramics bonded product, which comprises a ceramics sintered body bonded to another ceramics sintered body or a metal member through a ductile metal and a group IVa transition metal nitride interposed therebetween. Also disclosed is a method of producing a ceramics bonded product, which comprises bonding a ceramics sintered body and another ceramics sintered body or a metal member by allowing a ductile metal and a group IVa transition metal nitride to exist therebetween.
摘要翻译：公开了一种陶瓷接合产品，其包括通过延性金属与另一陶瓷烧结体或金属构件接合的陶瓷烧结体和介于其间的IVa族过渡金属氮化物。还公开了一种陶瓷接合产品的制造方法，其包括通过使延展性金属和Ⅳa族过渡金属氮化物存在于其间而使陶瓷烧结体与另一陶瓷烧结体或金属构件接合。

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