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    • 36. 发明授权
    • Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
    • 电子照相感光构件,处理盒和电子照相设备
    • US07141341B2
    • 2006-11-28
    • US11064082
    • 2005-02-24
    • Kunihiko SekidoHideaki NagasakaMichiyo SekiyaNobumichi MikiYosuke Morikawa
    • Kunihiko SekidoHideaki NagasakaMichiyo SekiyaNobumichi MikiYosuke Morikawa
    • G03G5/047
    • G03G5/0614G03G5/047G03G5/0605G03G5/0609G03G5/0612G03G5/0616G03G5/0629G03G5/0637G03G5/0638G03G5/0651G03G5/0666G03G5/0668G03G5/0672G03G5/0677G03G5/0687G03G5/0688G03G5/075
    • An electrophotographic photosensitive member superior in dot reproducibility and a process cartridge and an process cartridge having the electrophotographic photosensitive member are provided. Where in a light attenuation curve drawn in a way in which the surface of the electrophotographic photosensitive member is so charged that intensity of an electric field is 15 (V/μm) to establish the surface potential of the electrophotographic photosensitive member into a given value E(V) and then exposed to light under conditions that the electrophotographic photosensitive member has a surface potential of 0.8 E(V) at a time point T(ms) passes after exposure starts, the inclination of the light attenuation curve at a time point T(ms) passes after exposure starts is represented by m, and in a dark-time surface potential attenuation curve drawn in a way in which the surface of the electrophotographic photosensitive member is charged under conditions that the electrophotographic photosensitive member has a surface potential of 0.8 E(V) at a time point T(ms) passes after charging is finished and thereafter no exposure is performed, the inclination of the dark-time surface potential attenuation curve at a time point T(ms) passes after charging is finished is represented by m′, the m and m′ satisfy |m−m′|≦0.020, provided that T=[{d2/(μ×E)}×100]×10−5, where d is the layer thickness (μm) of the charge transport layer and μ is the drift mobility [cm2/(V·s)] of the charge transport layer.
    • 提供了点再现性优异的电子照相感光构件和处理盒以及具有电子照相感光构件的处理盒。 在光衰减曲线中,其中电子照相感光构件的表面如此充电,使得电场强度为15(V / mum),以将电子照相感光构件的表面电位建立为给定值E (V),然后在曝光开始后的时间点T(ms)经过电子照相感光构件的表面电位为0.8E(V)的条件下曝光,在时间点T上的光衰减曲线的倾斜度 曝光开始后的(ms)通过m表示,并且在以电子照相感光构件的表面电位为0.8的条件下以电子照相感光构件的表面进行充电的方式绘制的暗时表面电位衰减曲线 充电结束后的时间点T(ms)的E(V),之后不进行曝光,暗时表面电位的倾斜 在充电结束后的时间点T(ms)的延迟曲线由m'表示,m和m'满足| m-m'|≤0.020,条件是T = [{d 2 SUP> /(muxE)}×100]×10 -5,其中d是电荷输送层的层厚度(mum),μ是漂移迁移率[cm 2] /(Vs)]。