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31. 发明申请

US20160329441A1 SOLAR CELLS WITH IMPROVED LIFETIME, PASSIVATION AND/OR EFFICIENCY 审中-公开
公开(公告)号：US20160329441A1
公开(公告)日：2016-11-10
申请号：US15213273
申请日：2016-07-18
申请人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
发明人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
IPC分类号： H01L31/02 , H01L31/0368 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

32. 发明申请

US20160233348A1 SOLAR CELLS WITH TUNNEL DIELECTRICS 审中-公开
标题翻译：具有隧道电介质的太阳能电池
公开(公告)号：US20160233348A1
公开(公告)日：2016-08-11
申请号：US15135225
申请日：2016-04-21
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/0216 , H01L31/02 , H01L31/068 , H01L31/028 , H01L31/0376
摘要： A solar cell can have a first dielectric formed over a it doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
摘要翻译：太阳能电池可以具有在硅衬底的其掺杂区域上形成的第一电介质。太阳能电池可以具有在硅衬底的第二掺杂区域上形成的第二电介质，其中第一电介质是与第二电介质不同类型的电介质。可以在第一和第二电介质上形成掺杂半导体。可以在掺杂半导体上形成正型金属和负型金属。

33. 发明申请

US20160072000A1 FRONT CONTACT HETEROJUNCTION PROCESS 审中-公开
标题翻译：前接触异常过程
公开(公告)号：US20160072000A1
公开(公告)日：2016-03-10
申请号：US14578216
申请日：2014-12-19
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/068 , H01L31/0368 , H01L31/0224
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/0745 , H01L31/0747 , H01L31/075 , H01L31/1872 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods of fabricating solar cells using improved front contact heterojunction processes, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having first and second light-receiving surfaces. A tunnel dielectric layer is disposed on the first and second light-receiving surfaces. An N-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the first light-receiving surface. A P-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the second light-receiving surface. A transparent conductive oxide layer is disposed on the N-type polycrystalline silicon layer and on the P-type polycrystalline silicon layer. A first set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the N-type polycrystalline silicon layer. A second set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the P-type polycrystalline silicon layer.
摘要翻译：描述了使用改进的前接触异质结工艺制造太阳能电池的方法，以及所得到的太阳能电池。在一个示例中，太阳能电池包括具有第一和第二光接收表面的基板。隧道介电层设置在第一和第二光接收表面上。 N型多晶硅层设置在设置在第一受光面上的隧道介电层的部分上。 P型多晶硅层设置在设置在第二受光面上的隧道介电层的部分上。在N型多晶硅层和P型多晶硅层上设置透明导电氧化物层。第一组导电触点设置在设置在N型多晶硅层上的透明导电氧化物层的部分上。第二组导电触点设置在设置在P型多晶硅层上的透明导电氧化物层的部分上。

34. 发明授权

US09231129B2 Foil-based metallization of solar cells 有权
标题翻译：太阳能电池箔基金属化
公开(公告)号：US09231129B2
公开(公告)日：2016-01-05
申请号：US14229716
申请日：2014-03-28
申请人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/0687 , H01L31/02
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
摘要翻译：描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。在一个示例中，太阳能电池包括基板。多个交替的N型和P型半导体区域设置在衬底中或上方。导电接触结构设置在多个交替的N型和P型半导体区域的上方。导电接触结构包括多个金属种子材料区域，其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。金属箔设置在多个金属种子材料区域上，金属箔具有阳极化部分，隔离与交替的N型和P型半导体区对应的金属箔的金属区域。

35. 发明申请

US20150162483A1 SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 有权
标题翻译：太阳能电池发射区使用离子植入制造
公开(公告)号：US20150162483A1
公开(公告)日：2015-06-11
申请号：US14562159
申请日：2014-12-05
申请人： Timothy Weidman , David D. Smith
发明人： Timothy Weidman , David D. Smith
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/022441 , H01L31/035272 , H01L31/0682 , H01L31/1864 , H01L31/1872 , H01L31/1876 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.
摘要翻译：描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，制造太阳能电池的交替的N型和P型发射极区域的方法涉及在衬底上形成硅层。第一导电类型的掺杂杂质原子通过第一阴影掩模在硅层中注入以形成第一注入区，并产生硅层的非注入区。通过第二阴影掩模，在硅层的非注入区域的一部分中注入第二相对导电类型的掺杂杂质原子，以形成第二注入区，并产生硅层的剩余未注入区。通过选择性蚀刻工艺去除硅层的其余非注入区域，同时对硅层的第一和第二注入区域进行退火以形成掺杂的多晶硅发射极区域。

36. 发明申请

US20140166089A1 SOLAR CELL WITH SILICON OXYNITRIDE DIELECTRIC LAYER 有权
标题翻译：太阳能电池与硅氧化物电介质层
公开(公告)号：US20140166089A1
公开(公告)日：2014-06-19
申请号：US13720417
申请日：2012-12-19
申请人： Michael Shepherd , David D. Smith
发明人： Michael Shepherd , David D. Smith
IPC分类号： H01L31/0236 , H01L31/02
CPC分类号： H01L31/02 , H01L31/02002 , H01L31/02167 , H01L31/02245 , H01L31/0236 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/50 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiOxNy, 0
摘要翻译：描述了具有氮氧化硅介电层的太阳能电池和形成用于太阳能电池制造的氮氧化硅介电层的方法。例如，太阳能电池的发射极区域包括具有与受光面相反的背面的基板的一部分。在基板的该部分的背面上设置氧氮化硅（SiO x N y，O x，y）介电层。半导体层设置在氮氧化硅介电层上。

37. 发明申请

US20140134788A1 METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER 有权
标题翻译：用隧道电介质层制造太阳能电池的方法
公开(公告)号：US20140134788A1
公开(公告)日：2014-05-15
申请号：US14157386
申请日：2014-01-16
申请人： Tim Dennis , Scott Harrington , Jane Manning , David D. Smith , Ann Waldhauer
发明人： Tim Dennis , Scott Harrington , Jane Manning , David D. Smith , Ann Waldhauer
IPC分类号： H01L31/0368 , H01L31/0216
CPC分类号： H01L31/03921 , H01L31/0216 , H01L31/02168 , H01L31/0236 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/1804 , H01L31/182 , H01L31/1864 , H01L31/1872 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.
摘要翻译：描述了用隧道介电层制造太阳能电池的方法。还描述了具有隧道介电层的太阳能电池。

38. 发明授权

US08527945B2 Method and system for integrating multiple scripts 有权
标题翻译：集成多个脚本的方法和系统
公开(公告)号：US08527945B2
公开(公告)日：2013-09-03
申请号：US12776310
申请日：2010-05-07
申请人： David D. Smith , John Colosi
发明人： David D. Smith , John Colosi
IPC分类号： G06F9/44
CPC分类号： H04L43/50 , G06F8/30 , G06F11/3672 , H04L29/12066 , H04L61/1511
摘要： A method of testing the server implementation of the Domain Name System protocol by using a first body of computer code in a first programming language capable of sending and receiving DNS requests, and a second body of computer readable code in a second programming language capable of generating DNS requests and verifying responses. The second programming language may be tailored to writing code being capable of generating Domain Name System requests and verifying the response thereby allowing the program to be efficiently reconfigured to test different aspects of the server.
摘要翻译：一种通过使用能够发送和接收DNS请求的第一种编程语言的第一代计算机代码来测试域名系统协议的服务器实现的方法，以及能够产生第二编程语言的第二机体的计算机可读代码 DNS请求和验证响应。第二编程语言可以被定制以编写能够生成域名系统请求并验证响应的代码，从而允许有效地重新配置程序来测试服务器的不同方面。

39. 发明授权

US08460963B2 Trench process and structure for backside contact solar cells with polysilicon doped regions 有权
公开(公告)号：US08460963B2
公开(公告)日：2013-06-11
申请号：US12879847
申请日：2010-09-10
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

40. 发明授权

US07162021B1 Call routing control using call routing scripts 有权
标题翻译：使用呼叫路由脚本调用路由控制
公开(公告)号：US07162021B1
公开(公告)日：2007-01-09
申请号：US10728610
申请日：2003-12-05
申请人： Lawrence Johnson , Alberto Velella , David D. Smith , James P. Twitchell
发明人： Lawrence Johnson , Alberto Velella , David D. Smith , James P. Twitchell
IPC分类号： H04M3/42
CPC分类号： H04Q3/64 , H04M3/523 , H04Q2213/1305 , H04Q2213/13056 , H04Q2213/13072 , H04Q2213/13103 , H04Q2213/13107
摘要： A technique for use in controlling routing of a call in a communications system is provided. In one embodiment of the technique, a call routing script is used. The script includes at least one call routing instruction that refers to a variable whose value is stored externally to the script. The value of the variable is determined by the system when the system executes the script for determining a destination for the call. The value of the variable is stored in a database, and the database is read to determine the value of the variable.
摘要翻译：提供了一种用于控制通信系统中呼叫路由的技术。在该技术的一个实施例中，使用呼叫路由脚本。该脚本包括至少一个调用路由指令，该指令引用其值存储在脚本外部的变量。当系统执行用于确定呼叫的目的地的脚本时，变量的值由系统确定。变量的值存储在数据库中，读取数据库以确定变量的值。

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