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31. 发明授权

US11728801B2 Switching device and electronic circuit 有权
公开(公告)号：US11728801B2
公开(公告)日：2023-08-15
申请号：US17722967
申请日：2022-04-18
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Kazuhide Ino
IPC分类号： H02H9/00 , H03K17/081 , H03K17/082 , H03K17/12 , H01L23/00 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H01L23/31 , H01L23/373 , G01R19/00 , H02M1/00
CPC分类号： H03K17/08104 , G01R19/0092 , H01L23/3107 , H01L23/3735 , H01L24/40 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H02H3/202 , H02H9/046 , H02M7/5387 , H03K17/0822 , H03K17/122 , H01L24/33 , H01L24/37 , H01L24/48 , H01L2224/0603 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02M1/0009 , H03K2217/0027 , Y02B70/10 , H01L2224/48091 , H01L2924/00014 , H01L2924/13055 , H01L2924/00 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00 , H01L2224/49175 , H01L2224/48227 , H01L2924/00 , H01L2224/49175 , H01L2224/48247 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2224/49111 , H01L2224/48247 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/181 , H01L2924/00012 , H01L2224/84801 , H01L2924/00014 , H01L2224/83801 , H01L2924/00014
摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

32. 外观设计

USD978809S1 Semiconductor module 有权
公开(公告)号：USD978809S1
公开(公告)日：2023-02-21
申请号：US29757007
申请日：2020-11-02
申请人： ROHM CO., LTD.
设计人： Takumi Kanda , Masashi Hayashiguchi

33. 发明授权

US10826481B2 Switching device and electronic circuit 有权
公开(公告)号：US10826481B2
公开(公告)日：2020-11-03
申请号：US16270248
申请日：2019-02-07
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Kazuhide Ino
IPC分类号： H02H9/00 , H03K17/081 , H03K17/082 , H03K17/12 , H01L23/00 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H01L23/31 , H01L23/373 , G01R19/00 , H02M1/00
摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

34. 发明授权

US10192820B2 Semiconductor device 有权
公开(公告)号：US10192820B2
公开(公告)日：2019-01-29
申请号：US15553792
申请日：2016-02-04
申请人： ROHM CO., LTD.
发明人： Yoshihisa Tsukamoto , Masashi Hayashiguchi , Soichiro Takahashi
IPC分类号： H01L23/522 , H01L25/07 , H01L25/18 , H01L23/34 , H01L23/535 , H01L23/538 , H02M3/155
摘要： A first power supply terminal P is provided with an internal wiring connection portion 31A, an upright portion 31B which is joined to the internal wiring connection portion 31A, an inclined portion 31C which is joined to the upright portion 31B and an external wiring connection portion 31D which is joined to the inclined portion 31C. A second power supply terminal N is provided with an internal wiring connection portion 32A, an upright portion 32B which is joined to the internal wiring connection portion 32A, an inclined portion 32C which is joined to the upright portion 32B and an external wiring connection portion 32D which is joined to the inclined portion 32C. The upright portion 31B of the first power supply terminal P and the upright portion 32B of the second power supply terminal N are arranged so as to face each other, with a predetermined interval kept therebetween.

35. 外观设计

USD799439S1 Power converting semiconductor module 有权
公开(公告)号：USD799439S1
公开(公告)日：2017-10-10
申请号：US29585832
申请日：2016-11-29
申请人： ROHM CO., LTD.
设计人： Masashi Hayashiguchi

36. 发明授权

US12068741B2 Switching device and electronic circuit 有权
公开(公告)号：US12068741B2
公开(公告)日：2024-08-20
申请号：US18306713
申请日：2023-04-25
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Kazuhide Ino
IPC分类号： H02H3/00 , G01R19/00 , H01L23/00 , H01L23/31 , H01L23/373 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H03K17/081 , H03K17/082 , H03K17/12 , H02M1/00
CPC分类号： H03K17/08104 , G01R19/0092 , H01L23/3107 , H01L23/3735 , H01L24/40 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H02H3/202 , H02H9/046 , H02M7/5387 , H03K17/0822 , H03K17/122 , H01L24/33 , H01L24/37 , H01L24/48 , H01L2224/0603 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02M1/0009 , H03K2217/0027 , Y02B70/10 , H01L2224/48091 , H01L2924/00014 , H01L2924/13055 , H01L2924/00 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00 , H01L2224/49175 , H01L2224/48227 , H01L2924/00 , H01L2224/49175 , H01L2224/48247 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2224/49111 , H01L2224/48247 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/181 , H01L2924/00012 , H01L2224/84801 , H01L2924/00014 , H01L2224/83801 , H01L2924/00014
摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

37. 发明授权

US11664298B2 Semiconductor module 有权
公开(公告)号：US11664298B2
公开(公告)日：2023-05-30
申请号：US17721869
申请日：2022-04-15
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Takumi Kanda
IPC分类号： H01L23/495 , H01L23/31 , H01L23/50
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4952 , H01L23/49506 , H01L23/49562 , H01L23/49568 , H01L23/49589 , H01L23/50
摘要： A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

38. 发明授权

US11600602B2 Semiconductor power module 有权
公开(公告)号：US11600602B2
公开(公告)日：2023-03-07
申请号：US17173935
申请日：2021-02-11
申请人： ROHM CO., LTD.
发明人： Kenji Hayashi , Masashi Hayashiguchi
IPC分类号： H01L25/07 , H01L23/36 , H01L23/488 , H01L23/00 , H01L25/18 , H02M7/48
摘要： A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

39. 发明授权

US11336275B2 Switching device and electronic circuit 有权
公开(公告)号：US11336275B2
公开(公告)日：2022-05-17
申请号：US17070496
申请日：2020-10-14
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Kazuhide Ino
IPC分类号： H02H9/00 , H03K17/081 , H03K17/082 , H03K17/12 , H01L23/00 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H01L23/31 , H01L23/373 , G01R19/00 , H02M1/00
摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

40. 发明授权

US11328985B2 Semiconductor module 有权
公开(公告)号：US11328985B2
公开(公告)日：2022-05-10
申请号：US17044443
申请日：2019-05-14
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Takumi Kanda
IPC分类号： H01L23/495 , H01L23/31 , H01L23/50
摘要： A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

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