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31. 发明申请

US20050023557A1 Active matrix substrate, method of making the substrate, and display device 有权
标题翻译：有源矩阵基板，制造基板的方法和显示装置
公开(公告)号：US20050023557A1
公开(公告)日：2005-02-03
申请号：US10921620
申请日：2004-08-19
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/072
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
摘要翻译：有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。栅极线形成在基底基板上。数据线形成在栅极线上。每条数据线都插入绝缘膜，与所有栅极线交叉。薄膜晶体管形成在基底基板上。每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

32. 发明授权

US5981972A Actived matrix substrate having a transistor with multi-layered ohmic contact 失效
标题翻译：具有具有多层欧姆接触的晶体管的活性矩阵基板
公开(公告)号：US5981972A
公开(公告)日：1999-11-09
申请号：US79149
申请日：1998-05-15
申请人： Katsuhiro Kawai , Shinya Yamakawa , Satoshi Yabuta , Atsushi Ban
发明人： Katsuhiro Kawai , Shinya Yamakawa , Satoshi Yabuta , Atsushi Ban
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136227 , H01L29/4908 , H01L29/78669
摘要： An active matrix substrate of a Pixel on Passivation structure includes TFTs and pixel electrodes on an interlayer insulating film over bus lines. The interlayer insulating film is formed of an organic insulating film, and the contact layer of the TFT has a double layer structure of a fine crystal silicon (n.sup.+) layer and an amorphous silicon (n.sup.+) layer the crystal silicon (n.sup.+) layer being placed on the side closer to the source electrode and the drain electrode, and the amorphous silicon (n.sup.+) layer being placed on the opposite side. This improves both the ON characteristics and the OFF characteristics of the TFT are improved, and the stable operative region of the active matrix substrate and the margin to accommodate to variations in threshold value due to aging are expanded, without substantial additional production costs and a decrease in productivity.
摘要翻译：钝化结构像素的有源矩阵基板在总线上的层间绝缘膜上包括TFT和像素电极。层间绝缘膜由有机绝缘膜形成，TFT的接触层具有晶体硅（n +）层和非晶硅（n +）层的双层结构，晶体硅（n +）层被放置在更靠近源电极和漏电极的一侧，并且非晶硅（n +）层位于相对侧。这改善了TFT的ON特性和OFF特性，并且有效矩阵基板的稳定操作区域和裕度适应由于老化引起的阈值变化，而没有大量额外的生产成本和减少在生产力。

33. 发明申请

US20130001403A1 IMAGING ELEMENT, DRIVE METHOD FOR IMAGING ELEMENT, MANUFACTURING METHOD FOR IMAGING ELEMENT, AND ELECTRONIC APPARATUS 有权
标题翻译：成像元件，成像元件的驱动方法，成像元件的制造方法和电子设备
公开(公告)号：US20130001403A1
公开(公告)日：2013-01-03
申请号：US13523493
申请日：2012-06-14
申请人： Shinya Yamakawa
发明人： Shinya Yamakawa
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14692 , H04N5/3559
摘要： An imaging element includes a plurality of pixels. Each of the plurality of pixels includes the following element. A photoelectric transducer is disposed in each of the plurality of pixels and is configured to generate electric charge corresponding to received light. A storage unit has a predetermined capacitance and is configured to store therein electric charge transferred from the photoelectric transducer. A capacitor is disposed separate from a silicon substrate with an interlayer insulating film therebetween, the photoelectric transducer and the storage unit being formed in the silicon substrate. A connecting unit is disposed separate from the silicon substrate with the interlayer insulating film therebetween and is configured to connect the storage unit and the capacitor.
摘要翻译：成像元件包括多个像素。多个像素中的每一个包括以下元件。光电换能器设置在多个像素中的每一个中，并且被配置为产生对应于接收的光的电荷。存储单元具有预定电容并且被配置为存储从光电变换器传送的电荷。电容器与硅衬底分离设置，其间具有层间绝缘膜，光电转换器和存储单元形成在硅衬底中。连接单元与硅衬底分离设置，其间具有层间绝缘膜，并且被配置为连接存储单元和电容器。

34. 发明申请

US20100102394A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100102394A1
公开(公告)日：2010-04-29
申请号：US12530797
申请日：2008-02-27
申请人： Shinya Yamakawa , Yasushi Tateshita
发明人： Shinya Yamakawa , Yasushi Tateshita
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L27/0922 , H01L21/28518 , H01L21/31053 , H01L21/3212 , H01L21/8238 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/823864 , H01L21/823871 , H01L27/092 , H01L29/45 , H01L29/665 , H01L29/66545 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7848
摘要： It is to enhance a current increasing effect by increasing a stress applied on a channel of a transistor. The invention is characterized by comprising: side wall insulating films 33 and 53 formed on a semiconductor substrate 11 with trenches 39 and 59 which are formed by removing dummy gates; gate electrodes 43 and 63 formed within the trenches 39 and 59 through a gate insulating film 41; first and second stress applying films 21 and 22 respectively formed along the side wall insulating films 33 and 53 over the semiconductor substrate 11; and source/drain regions 35, 36, 55, and 56 which are formed in the semiconductor substrate 11 on the both sides of the gate electrodes 43 and 63, in that the stress applying films 21 and 22 are formed before the first trench 39 and the second trench 59 are formed.
摘要翻译：通过增加施加在晶体管的沟道上的应力来增强电流增加的效果。本发明的特征在于包括：形成在具有通过去除伪栅极形成的沟槽39和59的半导体衬底11上的侧壁绝缘膜33和53; 通过栅极绝缘膜41形成在沟槽39和59内的栅电极43和63; 分别沿着半导体基板11上的侧壁绝缘膜33和53形成的第一和第二应力施加膜21和22; 以及形成在栅电极43和63的两侧上的半导体衬底11中的源极/漏极区域35,36,55和56，其中应力施加膜21和22形成在第一沟槽39和形成第二沟槽59。

35. 发明授权

US08952432B2 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US08952432B2
公开(公告)日：2015-02-10
申请号：US13050156
申请日：2011-03-17
申请人： Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
发明人： Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
IPC分类号： H01L31/113 , H01L27/146 , H04N5/353 , H04N5/3745 , H04N5/363
CPC分类号： H01L27/14612 , H01L27/14601 , H01L27/14616 , H01L27/14643 , H01L27/14656 , H01L27/14689 , H01L27/14806 , H01L27/14862 , H04N5/353 , H04N5/363 , H04N5/37452
摘要： Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.
摘要翻译：本文公开了一种固态成像装置，其包括光电转换元件，该光电转换元件可操作以根据入射光量产生电荷并在其内积累电荷;电荷保持区域，其中通过通过光电转换元件的光电转换被保持直到读出，并且具有完全转移光电转换元件中的电荷的完整传输路径的传输门完全转移到电荷保持区域中，并且通过在曝光期间由光电转换元件产生的电量超过预定电荷量的电荷转移到电荷保持区域中。完整的传送路径和中间传送路径形成在不同的区域中。

36. 发明申请

US20110189845A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110189845A1
公开(公告)日：2011-08-04
申请号：US13084194
申请日：2011-04-11
申请人： Shinya Yamakawa
发明人： Shinya Yamakawa
IPC分类号： H01L21/283
CPC分类号： H01L29/66545 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/66553 , H01L29/6656 , H01L29/6659 , H01L29/66606 , H01L29/66621 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A method of manufacturing a semiconductor device in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a channel part, whereby carrier mobility can be improved and higher functionality can be achieved.
摘要翻译：一种制造半导体器件的方法，其中可以从具有不同晶格常数的半导体层从半导体衬底到沟道部分有效地施加应力，从而可以提高载流子迁移率并且可以实现更高的功能。

37. 发明申请

US20090065809A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090065809A1
公开(公告)日：2009-03-12
申请号：US12282112
申请日：2008-01-04
申请人： Shinya Yamakawa
发明人： Shinya Yamakawa
IPC分类号： H01L29/16 , H01L27/092 , H01L21/3205
CPC分类号： H01L29/66545 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/66553 , H01L29/6656 , H01L29/6659 , H01L29/66606 , H01L29/66621 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device is provided in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a channel part, whereby carrier mobility can be improved and higher functionality can be achieved. In a semiconductor device 1 including a gate electrode 7 provided on a semiconductor substrate 3 via a gate insulating film 5 and semiconductor layers (stress applying layers) 9 formed by epitaxial growth in parts formed by digging down the surface of the semiconductor substrate 3 on both sides of the gate electrode 7, the semiconductor layers 9 are a layer having a different lattice constant from the semiconductor substrate 3, and the gate insulating film 5 and the gate electrode 7 are provided in a state of filling a part formed by digging down the surface of the semiconductor substrate 3 between the semiconductor layers 9. It is supposed that a depth position d2 of the gate insulating film 5 with respect to the surface of the semiconductor substrate 3 is shallower than a depth position d1 of the semiconductor layers 9.
摘要翻译：提供一种半导体器件，其中可以从具有从半导体衬底到沟道部分的具有不同晶格常数的半导体层有效地施加应力，由此可以提高载流子迁移率并且可以实现更高的功能。在包括通过栅极绝缘膜5设置在半导体衬底3上的栅电极7的半导体器件1和通过在两者上挖掘半导体衬底3的表面而形成的部分中的外延生长形成的半导体层（应力施加层）9 栅电极7的侧面，半导体层9是具有与半导体基板3不同的晶格常数的层，并且栅极绝缘膜5和栅电极7以填充通过挖掘形成的部分而形成的部分的状态设置在半导体层9之间的半导体衬底3的表面。假设栅极绝缘膜5相对于半导体衬底3的表面的深度位置d2比半导体层9的深度位置d1浅。

38. 发明授权

US08981276B2 Imaging element with pixels having capacitors separated from substrate, drive method for imaging element, manufacturing method for imaging element, and electronic apparatus 有权
标题翻译：具有从衬底分离的电容器的像素的成像元件，用于成像元件的驱动方法，用于成像元件的制造方法和电子设备
公开(公告)号：US08981276B2
公开(公告)日：2015-03-17
申请号：US13523493
申请日：2012-06-14
申请人： Shinya Yamakawa
发明人： Shinya Yamakawa
IPC分类号： H01L27/00 , H01L27/146 , H04N5/355
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14692 , H04N5/3559
摘要： An imaging element includes a plurality of pixels. Each of the plurality of pixels includes the following element. A photoelectric transducer is disposed in each of the plurality of pixels and is configured to generate electric charge corresponding to received light. A storage unit has a predetermined capacitance and is configured to store therein electric charge transferred from the photoelectric transducer. A capacitor is disposed separate from a silicon substrate with an interlayer insulating film therebetween, the photoelectric transducer and the storage unit being formed in the silicon substrate. A connecting unit is disposed separate from the silicon substrate with the interlayer insulating film therebetween and is configured to connect the storage unit and the capacitor.
摘要翻译：成像元件包括多个像素。多个像素中的每一个包括以下元件。光电换能器设置在多个像素中的每一个中，并且被配置为产生对应于接收的光的电荷。存储单元具有预定电容并且被配置为存储从光电变换器传送的电荷。电容器与硅衬底分离设置，其间具有层间绝缘膜，光电转换器和存储单元形成在硅衬底中。连接单元与硅衬底分离设置，其间具有层间绝缘膜，并且被配置为连接存储单元和电容器。

39. 发明授权

US08975667B2 Solid-state imaging device, electronic equipment and manufacturing method of the solid-state imaging device 有权
标题翻译：固态成像装置，电子设备及固态成像装置的制造方法
公开(公告)号：US08975667B2
公开(公告)日：2015-03-10
申请号：US13618765
申请日：2012-09-14
申请人： Akiko Honjo , Shinya Yamakawa
发明人： Akiko Honjo , Shinya Yamakawa
IPC分类号： H01L31/00 , H01L31/113 , H01L27/146
CPC分类号： H01L31/1136 , H01L27/146 , H01L27/14609 , H01L27/14612 , H01L27/1463
摘要： A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.
摘要翻译：一种固态成像装置，包括被配置为处理在光接收区域中捕获的电荷的有源元件，被配置为隔离有源元件的区域的元件隔离区域，被配置为围绕元件隔离区域的第一杂质区域和第二杂质区域包括杂质浓度低于第一杂质区域的杂质区域，第二杂质区域设置在第一杂质区域和有源元件之间。

40. 发明申请

US20130099094A1 SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置的固态成像装置，电子装置及其制造方法
公开(公告)号：US20130099094A1
公开(公告)日：2013-04-25
申请号：US13618765
申请日：2012-09-14
申请人： Akiko Honjo , Shinya Yamakawa
发明人： Akiko Honjo , Shinya Yamakawa
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L31/1136 , H01L27/146 , H01L27/14609 , H01L27/14612 , H01L27/1463
摘要： A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.
摘要翻译：一种固态成像装置，包括被配置为处理在光接收区域中捕获的电荷的有源元件，被配置为隔离有源元件的区域的元件隔离区域，被配置为围绕元件隔离区域的第一杂质区域和第二杂质区域包括杂质浓度低于第一杂质区域的杂质区域，第二杂质区域设置在第一杂质区域和有源元件之间。

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