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31. 发明授权

US5740272A Inspection apparatus of wiring board 失效
标题翻译：接线板检查装置
公开(公告)号：US5740272A
公开(公告)日：1998-04-14
申请号：US606344
申请日：1996-02-23
申请人： Yoshinori Shimada
发明人： Yoshinori Shimada
IPC分类号： G01B11/30 , G01J5/00 , G01R31/309 , G02F1/13 , G02F1/1343 , G09G3/00 , H01L21/66 , G01R31/02 , G01J5/10
CPC分类号： G09G3/006 , G01J5/00 , G01J5/0096 , G01R31/309 , G01J2005/0077
摘要： An object of the invention is to shorten the inspection time of wiring board. A high frequency signal is applied to source signal wiring of a substrate member 12 put on a table 13 from signal feeding means 17 through terminals of a frame 14. A signal of which voltage absolute value is greater than the voltage amplitude of the high frequency signal and voltage polarity is positive is applied to a scanning wiring of the substrate member 12. An infrared image of the substrate member 12 with signal applied is taken by image pickup means 15. In image processing means 16, from the image data fed from the image pickup means 15, an infrared image changing in contrast depending on the emission of infrared rays is formed, and the infrared image is divided into plural regions equal in the size of wiring pattern. In control means 18, the image of each divided region is compared with images of plural adjacent regions, and difference is detected. When a difference is detected, it is judged there is a defect in that region.
摘要翻译：本发明的目的是缩短布线板的检查时间。从信号馈送装置17通过帧14的端子将高频信号施加到放置在台13上的基板部件12的源极信号布线。电压绝对值大于高频信号的电压振幅的信号并且电压极性为正。施加信号的基板部件12的红外图像由图像拾取装置15拍摄。在图像处理装置16中，从图像馈送的图像数据拾取装置15形成相对于红外线发射的红外图像，红外图像被分成与布线图案大小相等的多个区域。在控制装置18中，将各分割区域的图像与多个相邻区域的图像进行比较，并检测差异。当检测到差异时，判断该区域存在缺陷。

32. 发明授权

US07812893B2 Active matrix substrate where a portion of the storage capacitor wiring or the scanning signal line overlaps with the drain lead-out wiring connected to the drain electrode of a thin film transistor and display device having such an active matrix substrate 失效
标题翻译：有源矩阵基板，其中存储电容器布线或扫描信号线的一部分与连接到薄膜晶体管的漏极的漏极引出布线重叠，并且具有这种有源矩阵基板的显示装置
公开(公告)号：US07812893B2
公开(公告)日：2010-10-12
申请号：US11719028
申请日：2005-09-20
申请人： Toshifumi Yagi , Toshihide Tsubata , Tsuyoshi Tokuda , Kenji Enda , Yoshinori Shimada , Shinya Maruoka
发明人： Toshifumi Yagi , Toshihide Tsubata , Tsuyoshi Tokuda , Kenji Enda , Yoshinori Shimada , Shinya Maruoka
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1337
CPC分类号： G02F1/133707 , G02F1/136213 , G02F1/136227 , G02F1/136286
摘要： An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.
摘要翻译：有源矩阵基板抑制了生产成本的降低和生产步骤的增加，并且同时允许充分确保存储容量和提高像素的开口率。有源矩阵基板是有源矩阵基板，并且包括设置在扫描信号线与基板上的数据信号线交叉的薄膜晶体管，薄膜晶体管包括连接到扫描信号线的栅电极，源极连接到数据信号线的电极和连接到漏极引出布线的漏电极; 连接到漏极引出布线的存储电容器上电极和像素电极; 以及通过绝缘膜与所述保持电容器上部电极重叠的保持电容配线，其中所述保持电容配线具有通过所述绝缘膜与所述漏极引出配线重叠的延伸部。

33. 发明申请

US20090073335A1 ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE 失效
标题翻译：主动矩阵基板和显示设备
公开(公告)号：US20090073335A1
公开(公告)日：2009-03-19
申请号：US11719028
申请日：2005-09-20
申请人： Toshifumi Yagi , Toshihide Tsubata , Tsuyoshi Tokuda , Kenji Enda , Yoshinori Shimada , Shinya Maruoka
发明人： Toshifumi Yagi , Toshihide Tsubata , Tsuyoshi Tokuda , Kenji Enda , Yoshinori Shimada , Shinya Maruoka
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： G02F1/133707 , G02F1/136213 , G02F1/136227 , G02F1/136286
摘要： An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.
摘要翻译：有源矩阵基板抑制了生产成本的降低和生产步骤的增加，并且同时允许充分确保存储容量和提高像素的开口率。有源矩阵基板是有源矩阵基板，并且包括设置在扫描信号线与基板上的数据信号线交叉的薄膜晶体管，薄膜晶体管包括连接到扫描信号线的栅电极，源极连接到数据信号线的电极和连接到漏极引出布线的漏电极; 连接到漏极引出布线的存储电容器上电极和像素电极; 以及通过绝缘膜与所述保持电容器上部电极重叠的保持电容配线，其中所述保持电容配线具有通过所述绝缘膜与所述漏极引出配线重叠的延伸部。

34. 发明授权

US06368756B1 Photomask, method for producing TFT substrate, and method for producing display device 有权
标题翻译：光掩模，TFT基板的制造方法以及显示装置的制造方法
公开(公告)号：US06368756B1
公开(公告)日：2002-04-09
申请号：US09511117
申请日：2000-02-23
申请人： Shigeyuki Yamada , Taimi Oketani , Yoshinori Shimada
发明人： Shigeyuki Yamada , Taimi Oketani , Yoshinori Shimada
IPC分类号： G03F188
CPC分类号： G03F1/78
摘要： A photomask of the present invention is a photomask for use in production of a display device, the photomask having on its surface a plurality of drawn areas and a transitional portion between two adjacent ones of the drawn areas. A pattern is formed on at least one of the drawn areas. A ratio between a pattern pitch and a transitional portion pitch is an integral ratio such that a length defined by a least common multiple of the pattern pitch and the transitional portion pitch is 1 mm or less.
摘要翻译：本发明的光掩模是用于制造显示装置的光掩模，该光掩模在其表面上具有多个拉伸区域和两个相邻的拉伸区域之间的过渡部分。在至少一个绘制区域上形成图案。图案间距和过渡部间距之间的比是整数比，使得由图案间距和过渡部间距的最小公倍数限定的长度为1mm以下。

35. 发明授权

US06323051B1 Method of manufacturing liquid crystal display 有权
标题翻译：制造液晶显示器的方法
公开(公告)号：US06323051B1
公开(公告)日：2001-11-27
申请号：US09520341
申请日：2000-03-07
申请人： Yoshinori Shimada
发明人： Yoshinori Shimada
IPC分类号： H01L2100
CPC分类号： H01L27/1288 , G02F1/13458 , G02F1/1362 , H01L27/1214
摘要： A manufacturing method of a liquid crystal display of the present invention is a manufacturing method of a liquid crystal display having a glass substrate provided thereon with a matrix of thin film transistors, each having a semiconductor film pattern formed by photo-etching a high-resistance semiconductor film and a low-resistance semiconductor film, and a third metal film serving as a source metal film layer layered on the semiconductor film pattern, in which the semiconductor film pattern is formed on the glass substrate first, and thence the third metal film is layered on the glass substrate. Consequently, a liquid crystal display can be manufactured with a fewer number of manufacturing steps while at the same time the manufacturing costs can be saved by preventing a decrease in the yield caused by film separation.
摘要翻译：本发明的液晶显示装置的制造方法是具有玻璃基板的液晶显示装置的制造方法，所述玻璃基板上设置有薄膜晶体管的矩阵，每个薄膜晶体管具有通过光刻蚀高电阻而形成的半导体膜图案半导体膜和低电阻半导体膜，以及作为在半导体膜图案上层叠的源极金属膜层的第三金属膜，其中首先在玻璃基板上形成半导体膜图案，然后第三金属膜为分层在玻璃基板上。因此，可以以较少数量的制造步骤制造液晶显示器，同时可以通过防止由于膜分离引起的成品率的降低来节省制造成本。

36. 发明授权

US08468890B2 Ultrasonic detection device, ultrasonic detection method, and atomic power plant nondestructive inspection method 有权
标题翻译：超声波检测装置，超声波检测方法和原子能发电厂无损检测方法
公开(公告)号：US08468890B2
公开(公告)日：2013-06-25
申请号：US12670788
申请日：2008-08-08
申请人： Masanori Shimazaki , Masayuki Takeishi , Tomoyuki Hirayama , Yoshinori Shimada , Oleg Kotiaev
发明人： Masanori Shimazaki , Masayuki Takeishi , Tomoyuki Hirayama , Yoshinori Shimada , Oleg Kotiaev
IPC分类号： G01N29/00
CPC分类号： G01N29/2418 , G01N29/043 , G01N29/34 , G01N29/348 , G01S15/8965 , G10K15/046 , G21C17/003
摘要： Provided are an ultrasonic inspection device, an ultrasonic inspection method, and an atomic power plant nondestructive inspection method that are capable of efficiently generating ultrasonic waves having a sufficient intensity and that are capable of carrying out preferable inspection in a wide range. Provided is an ultrasonic inspection device including a laser device that emits output-adjusted laser light and a volumetric inspection ultrasonic-wave transmitting unit having a transmitting diaphragm that generates ultrasonic waves upon being irradiated with the laser light emitted by the laser device, inspection being carried out by radiating the ultrasonic waves generated by the transmitting diaphragm of the volumetric inspection ultrasonic-wave transmitting unit on a structural member, wherein the transmitting diaphragm is formed of titanium.
摘要翻译：提供能够有效地产生具有足够强度并且能够在宽范围内进行优选检查的超声波的超声波检查装置，超声波检查方法和原子能发电厂无损检查方法。提供一种超声波检查装置，其包括发射输出调节激光的激光装置和具有发射光圈的体积检查超声波发射部，该发射光圈在被激光装置发射的激光照射时产生超声波，进行检查通过将体积检查超声波发送单元的发送振动膜产生的超声波辐射到结构构件上，其中，所述发射振动膜由钛形成。

37. 发明授权

US07948586B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07948586B2
公开(公告)日：2011-05-24
申请号：US11815783
申请日：2006-07-07
申请人： Naoshi Yamada , Toshihide Tsubata , Hidehiko Yamaguchi , Yoshinori Shimada
发明人： Naoshi Yamada , Toshihide Tsubata , Hidehiko Yamaguchi , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/1339
CPC分类号： G02F1/1339 , G02F1/1333 , G02F1/133514
摘要： In a liquid crystal display device, an array substrate and a CF substrate are arranged face to face with each other. A liquid crystal layer is provided between the array substrate and the CF substrate. The array substrate and the CF substrate are bonded together by a sealing member containing a photo curing material. The array substrate has a surface opposed to the CF substrate. Metal wires are provided in the circumferential portion of the opposed surface. A transparent film is disposed between the metal wires and the sealing member.
摘要翻译：在液晶显示装置中，阵列基板和CF基板彼此面对地配置。在阵列基板和CF基板之间设置液晶层。阵列基板和CF基板通过含有光固化材料的密封构件接合在一起。阵列基板具有与CF基板相对的表面。金属线设置在相对表面的圆周部分中。透明膜设置在金属线和密封构件之间。

38. 发明申请

US20100206082A1 ULTRASONIC DETECTION DEVICE, ULTRASONIC DETECTION METHOD, AND ATOMIC POWER PLANT NONDESTRUCTIVE INSPECTION METHOD 有权
标题翻译：超声波检测装置，超声波检测方法和原子发电厂无损检测方法
公开(公告)号：US20100206082A1
公开(公告)日：2010-08-19
申请号：US12670788
申请日：2008-08-08
申请人： Masanori Shimazaki , Masayuki Takeishi , Tomoyuki Hirayama , Yoshinori Shimada , Oleg Kotiaev
发明人： Masanori Shimazaki , Masayuki Takeishi , Tomoyuki Hirayama , Yoshinori Shimada , Oleg Kotiaev
IPC分类号： G01N29/00
CPC分类号： G01N29/2418 , G01N29/043 , G01N29/34 , G01N29/348 , G01S15/8965 , G10K15/046 , G21C17/003
摘要： Provided are an ultrasonic inspection device, an ultrasonic inspection method, and an atomic power plant nondestructive inspection method that are capable of efficiently generating ultrasonic waves having a sufficient intensity and that are capable of carrying out preferable inspection in a wide range. Provided is an ultrasonic inspection device including a laser device that emits output-adjusted laser light and a volumetric inspection ultrasonic-wave transmitting unit having a transmitting diaphragm that generates ultrasonic waves upon being irradiated with the laser light emitted by the laser device, inspection being carried out by radiating the ultrasonic waves generated by the transmitting diaphragm of the volumetric inspection ultrasonic-wave transmitting unit on a structural member, wherein the transmitting diaphragm is formed of titanium.
摘要翻译：提供能够有效地产生具有足够强度并且能够在宽范围内进行优选检查的超声波的超声波检查装置，超声波检查方法和原子能发电厂无损检查方法。提供一种超声波检查装置，其包括发射输出调节激光的激光装置和具有发射光圈的体积检查超声波发射部，该发射光圈在被激光装置发射的激光照射时产生超声波，进行检查通过将体积检查超声波发送单元的发送振动膜产生的超声波辐射到结构构件上，其中，所述发射振动膜由钛形成。

39. 发明申请

US20090152560A1 Method for fabricating thin film transistor array substrate and thin film transistor array substrate 有权
标题翻译：制造薄膜晶体管阵列基板和薄膜晶体管阵列基板的方法
公开(公告)号：US20090152560A1
公开(公告)日：2009-06-18
申请号：US11991360
申请日：2006-05-29
申请人： Toshifumi Yagi , Toshihide Tsubata , Yoshinori Shimada
发明人： Toshifumi Yagi , Toshihide Tsubata , Yoshinori Shimada
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： G02F1/13458 , G02F1/133707 , G02F1/1368 , G02F2001/13712 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/4908
摘要： After forming a gate electrode (4a) in a first step, a gate insulating film (5), a semiconductor film (8) and a conducting film (12) including a transparent conducting film (9) are stacked, and on the thus obtained multilayered body (18), a resist pattern (13a) including a first opening (14a) for exposing the conducting film (12) therein and a second opening (14b) having a bottom portion (B) above the gate electrode (4a) is formed. Portions of the conducting film (12) and the semiconductor film (8) exposed in the first opening (14a) are etched, the bottom portion (B) of the second opening (14b) is removed for exposing the conducting film (12) therein, and the exposed conducting film (12) is etched, so as to form a TFT (20) in a second step. A pixel electrode (5a), a protection masking layer (17a) and a projection (17b) are formed in a third step.
摘要翻译：在第一步骤中形成栅电极（4a）之后，堆叠包括透明导电膜（9）的栅绝缘膜（5），半导体膜（8）和导电膜（12）多层体（18），包括用于将导电膜（12）暴露的第一开口（14a）和在栅电极（4a）上方具有底部（B）的第二开口（14b）的抗蚀剂图案（13a）形成。蚀刻在第一开口（14a）中暴露的导电膜（12）和半导体膜（8）的一部分，去除第二开口（14b）的底部（B），以将导电膜（12）暴露在其中，并且暴露的导电膜（12）被蚀刻，以便在第二步骤中形成TFT（20）。在第三步骤中形成像素电极（5a），保护屏蔽层（17a）和突起（17b）。

40. 发明授权

US07521702B2 Extreme ultraviolet light source and extreme ultraviolet light source target 有权
标题翻译：极紫外光源和极紫外光源目标
公开(公告)号：US07521702B2
公开(公告)日：2009-04-21
申请号：US10550800
申请日：2003-12-26
申请人： Keiji Nagai , Hiroaki Nishimura , Takayoshi Norimatsu , Katsunobu Nishihara , Noriaki Miyanaga , Masahiro Nakatsuka , Yasukazu Izawa , Tatsuhiko Yamanaka , Mitsuo Nakai , Keisuke Shigemori , Masakatsu Murakami , Yoshinori Shimada , Shigeaki Uchida , Hiroyuki Furukawa , Atsushi Sunahara , Vasilli Zhakhovski , Ryouji Matsui , Takahiro Hibino , Tomoharu Okuno
发明人： Keiji Nagai , Hiroaki Nishimura , Takayoshi Norimatsu , Katsunobu Nishihara , Noriaki Miyanaga , Masahiro Nakatsuka , Yasukazu Izawa , Tatsuhiko Yamanaka , Mitsuo Nakai , Keisuke Shigemori , Masakatsu Murakami , Yoshinori Shimada , Shigeaki Uchida , Hiroyuki Furukawa , Atsushi Sunahara , Vasilli Zhakhovski , Ryouji Matsui , Takahiro Hibino , Tomoharu Okuno
IPC分类号： G03F7/20 , H05G2/00
CPC分类号： H05G2/001 , B82Y10/00 , G03F7/70033
摘要： An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the crystal density is used. When the target is irradiated with a laser beam, plasma of the heavy metal contained in the target is generated, and extreme ultraviolet light having a predetermined wavelength which corresponds to the kind of the heavy metal is emitted from the plasma. When the density of the target is made to be smaller than the crystal density as described above, space distribution of the density of the generated plasma can be controlled, and the region in which plasma absorbs energy of the laser beam overlaps the region in which the plasma emits the extreme ultraviolet light. Thus, emission efficiency can be improved, preventing energy loss. For example, in a case where the SnO2 target having a density 24% of the crystal density is used, the emission efficiency at around 13.5 nm wavelength is higher than in the case where a Sn crystal target is used.
摘要翻译：本发明的目的是提供一种能够发射具有高发射效率的极紫外光的极紫外光源靶。使用由重金属或重金属化合物制成的具有密度为晶体密度的0.5〜80％的固体靶。当用激光束照射靶时，产生包含在靶中的重金属的等离子体，并且从等离子体发射具有对应于重金属的种类的预定波长的极紫外光。当如上所述使靶的密度小于晶体密度时，可以控制产生的等离子体的密度的空间分布，并且等离子体吸收激光束的能量的区域与等离子体发出极紫外光。因此，可以提高排放效率，防止能量损失。例如，在使用密度为结晶密度的24％的SnO 2靶的情况下，波长13.5nm左右的发光效率高于使用Sn晶体靶的情况。

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