会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 39. 发明授权
    • Semiconductor device with improved planarity and reduced parasitic
capacitance
    • 具有改善的平面性和降低的寄生电容的半导体器件
    • US06153918A
    • 2000-11-28
    • US138017
    • 1998-08-21
    • Hiroshi KawashimaMasakazu OkadaKeiichi YamadaKeiichi Higashitani
    • Hiroshi KawashimaMasakazu OkadaKeiichi YamadaKeiichi Higashitani
    • H01L21/762H01L21/8234H01L29/00
    • H01L21/76237H01L21/823475
    • In a semiconductor device and a method of manufacturing the same, a dummy region which can suppress occurrence of a parasitic capacity can be provided for reducing a difference in level without increasing manufacturing steps in number. A semiconductor substrate is provided at its main surface with an isolation region formed by a trench, and a dummy region leaving the main surface is formed in the isolation region for the purpose of reducing an influence by the difference in level in a later step. The dummy region includes p- and n-type impurity regions each extending a predetermined depth from the surface. Since a pn junction occurs at the bottom of the impurity region, a depletion layer spreads in the pn junction, and thereby reduces a parasitic capacity between the dummy region and a conductive interconnection located in a crossing direction at a higher position. The impurity regions and source/drain regions of p- and n-channel transistors in active regions are simultaneously formed by impurity implantation.
    • 在半导体器件及其制造方法中,可以提供能够抑制寄生电容的发生的虚拟区域,以减少水平差而不增加数量的制造步骤。 半导体衬底在其主表面上设置有由沟槽形成的隔离区域,并且在隔离区域中形成了离开主表面的虚拟区域,以便减少后续步骤中的电平差的影响。 虚拟区域包括各自从表面延伸预定深度的p型和n型杂质区。 由于在杂质区域的底部发生pn结,所以在pn结中扩散耗尽层,从而降低位于较高位置处的交叉方向上的虚设区域和导电配线之间的寄生电容。 有源区中的p沟道晶体管和n沟道晶体管的杂质区和源/漏区同时由杂质注入形成。
    • 40. 发明授权
    • Passenger side air bag
    • 乘客侧气囊
    • US6042144A
    • 2000-03-28
    • US978473
    • 1997-11-25
    • Takashi MurakamiKeiichi YamadaYorihito Okuda
    • Takashi MurakamiKeiichi YamadaYorihito Okuda
    • B60R21/16B60R21/205B60R21/2342B60R21/22
    • B60R21/2342
    • In order to simplify the complex setting of the expansion pressure of an inflator and easily control the expanded direction of an air bag, the air bag is contained in an instrument panel such that the air bag faces an expansion opening formed in an upper surface of the instrument panel and, when a pressure fluid discharged from the inflator is fed into the air bag through an inlet of the air bag and thereby the air bag is inflated and expanded, a front bag part for a front side of a vehicle and a rear bag part for a rear side of the vehicle are inflated and expanded forward and rearward in a vehicle longitudinal direction with the inlet therebetween, respectively. The air bag has a seam, formed in the front bag part, for temporarily delaying delivery of the pressure fluid into the front bag part during initial inflation of the air bag. Thereby, the front bag part is inflated and expanded later than the rear bag part.
    • 为了简化充气机的膨胀压力的复杂设定,容易控制气囊的膨胀方向,气囊被容纳在仪表板中,使得气囊面对形成在气囊的上表面的膨胀开口 仪表板,并且当从充气机排出的压力流体通过气囊的入口进入气囊,从而使气囊膨胀和膨胀时,用于车辆前侧的前袋部件和后袋 车辆的后侧的部分分别在车辆纵向方向上与前后方向充气和扩张。 气囊具有形成在前袋部分中的接缝,用于在气囊的初始充气期间临时延迟压力流体输送到前袋部分中。 由此,前袋部比后袋部膨胀后膨胀。