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31. 发明申请

US20050056925A1 High-frequency module and method for manufacturing the same 有权
标题翻译：高频模块及其制造方法
公开(公告)号：US20050056925A1
公开(公告)日：2005-03-17
申请号：US10960161
申请日：2004-10-06
申请人： Hideki Takehara , Noriyuki Yoshikawa , Kunihiko Kanazawa
发明人： Hideki Takehara , Noriyuki Yoshikawa , Kunihiko Kanazawa
IPC分类号： H01L23/28 , H01L23/00 , H01L23/12 , H01L23/31 , H01L23/552 , H05K1/02 , H05K3/00 , H05K3/28 , H05K9/00 , H01L23/14
CPC分类号： H05K3/284 , H01L23/3121 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/15159 , H01L2924/15787 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H05K1/0218 , H05K3/0052 , H05K2201/09918 , H01L2224/85 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.
摘要翻译：在本发明的高频模块中，形成绝缘树脂，以密封安装在基板的表面上的高频半导体元件，并进一步密封电子部件。此外，在绝缘树脂的表面上形成金属薄膜。这种金属薄膜提供电磁波屏蔽效果。

32. 发明授权

US5717249A RF power amplifying circuit device 失效
标题翻译： RF功率放大电路装置
公开(公告)号：US5717249A
公开(公告)日：1998-02-10
申请号：US627656
申请日：1996-04-04
申请人： Noriyuki Yoshikawa , Kazuki Tateoka , Akihisa Sugimura , Kunihiko Kanazawa
发明人： Noriyuki Yoshikawa , Kazuki Tateoka , Akihisa Sugimura , Kunihiko Kanazawa
IPC分类号： H01L23/498 , H01L23/66 , H01L27/01 , H01L23/32 , H01L23/48
CPC分类号： H01L23/49833 , H01L23/49805 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/1423 , H01L2924/19015 , H01L2924/19041 , H01L2924/19103 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025
摘要： A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an RF matching circuit. A ground layer is formed on the second ceramic substrate, i.e., in a middle layer, thereby preventing the interference of electric signals between circuit components mounted in the respective layers upper and lower than the ground layer. A bias circuit is formed on the top face of the third ceramic substrate, while a back-face ground electrode is formed on the back face of the third ceramic substrate. A leadless electrode is formed over the side faces of the respective ceramic substrates and the back face of the lowermost third ceramic substrate. By utilizing the high heat conductivity and proper dielectric constant of aluminum nitride, the overall RF power amplifying circuit device can be miniaturized at lower cost.
摘要翻译：多个陶瓷基板层叠以形成多层结构。具有FET等的半导体芯片安装在最上面的第一陶瓷衬底上以形成RF匹配电路。在第二陶瓷基板上即中间层形成接地层，从而防止电气信号在安装在上层和下层的各层之间的电路元件之间的干扰。在第三陶瓷基板的顶面上形成有偏置电路，在第三陶瓷基板的背面形成背面接地电极。在各个陶瓷基板的侧面和最下面的第三陶瓷基板的背面上形成无引线电极。通过利用氮化铝的高导热性和适当的介电常数，可以以更低的成本将整个RF功率放大电路器件小型化。

33. 发明授权

US07949023B2 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US07949023B2
公开(公告)日：2011-05-24
申请号：US12613928
申请日：2009-11-06
申请人： Noriyuki Yoshikawa
发明人： Noriyuki Yoshikawa
IPC分类号： H01S3/00 , H01S3/04
CPC分类号： H02M1/36 , H01L2924/3511 , H02M3/33523
摘要： A semiconductor laser apparatus of the present invention includes: a semiconductor laser chip 1 having an electrode 11 formed on a surface of the semiconductor laser chip 1; a heat sink 3 for the semiconductor laser chip 1; a submount 2 disposed between the semiconductor laser chip 1 and the heat sink 3 and bonded to the semiconductor laser chip 1 and the heat sink 3; and recessed marks 13 formed on the surface of the semiconductor laser chip 1 by partially removing the electrode 11, wherein the semiconductor laser chip 1 is longer in the resonator direction than in a direction orthogonal to the resonator direction, and the recessed marks 13 are disposed within a predetermined distance from each of the front and rear end faces of the semiconductor laser chip.
摘要翻译：本发明的半导体激光装置包括：具有形成在半导体激光芯片1的表面上的电极11的半导体激光芯片1; 用于半导体激光芯片1的散热器3; 设置在半导体激光器芯片1和散热器3之间并连接到半导体激光器芯片1和散热器3的基座2; 以及通过部分地去除电极11而形成在半导体激光器芯片1的表面上的凹痕13，其中半导体激光器芯片1在谐振器方向上比在与谐振器方向正交的方向上更长，并且设置凹进的标记13 在距离半导体激光芯片的前端面和后端面的预定距离内。

34. 发明申请

US20110001208A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20110001208A1
公开(公告)日：2011-01-06
申请号：US12918023
申请日：2009-02-26
申请人： Junya Furuyashiki , Noriyuki Yoshikawa , Toshiyuki Fukuda , Toshimasa Itooka , Hiroki Utatsu
发明人： Junya Furuyashiki , Noriyuki Yoshikawa , Toshiyuki Fukuda , Toshimasa Itooka , Hiroki Utatsu
IPC分类号： H01L31/0203 , H01L31/18 , H01L35/22
CPC分类号： H01L31/0203 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/05553 , H01L2224/451 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/78301 , H01L2224/8518 , H01L2224/85186 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/10161 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2224/4554
摘要： An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.
摘要翻译：在半导体元件的光接收部周围的部分设置有绝缘体，在绝缘体周围设置密封树脂，从而从光接收部观察时向外翘曲绝缘体，防止扩散光返回到受光部的半导体元件。

35. 发明申请

US20100308468A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20100308468A1
公开(公告)日：2010-12-09
申请号：US12867804
申请日：2009-03-02
申请人： Noriyuki Yoshikawa , Toshiyuki Fukuda , Junya Furuyashiki , Toshimasa Itooka , Hiroki Utatsu
发明人： Noriyuki Yoshikawa , Toshiyuki Fukuda , Junya Furuyashiki , Toshimasa Itooka , Hiroki Utatsu
IPC分类号： H01L23/28 , H01L21/78
CPC分类号： H01L23/49805 , H01L23/3107 , H01L23/49541 , H01L23/49548 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a semiconductor device made of a plurality of materials, if the device is fabricated through a step of cutting the bonded plurality of materials, a boundary line of the plurality of materials is exposed on a cutting plane. Internal stress in the cutting remains at this boundary line to allow moisture and corrosive gas to easily enter into the device. In order to reduce the entrance of the moisture, the gas, and the like, the boundary appearing on the cutting plane is covered by a covering layer. At this time, partial cutting exposing the boundary line and not separating semiconductor devices are performed so that the covering layer can be formed with the plurality of semiconductor devices attached to the substrate.
摘要翻译：在由多种材料制成的半导体器件中，如果通过切割粘合的多种材料的步骤制造器件，则在切割平面上暴露多种材料的边界线。切割中的内部应力保持在该边界线处，以允许湿气和腐蚀性气体容易地进入该装置。为了减少水分，气体等的入口，出现在切割平面上的边界被覆盖层覆盖。此时，进行露出边界线而不分离半导体器件的部分切割，使得覆盖层可以形成有附接到基板的多个半导体器件。

36. 发明申请

US20100158059A1 SEMICONDUCTOR LASER APPARATUS 有权
标题翻译：半导体激光设备
公开(公告)号：US20100158059A1
公开(公告)日：2010-06-24
申请号：US12613928
申请日：2009-11-06
申请人： Noriyuki Yoshikawa
发明人： Noriyuki Yoshikawa
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H02M1/36 , H01L2924/3511 , H02M3/33523
摘要： A semiconductor laser apparatus of the present invention includes: a semiconductor laser chip 1 having an electrode 11 formed on a surface of the semiconductor laser chip 1; a heat sink 3 for the semiconductor laser chip 1; a submount 2 disposed between the semiconductor laser chip 1 and the heat sink 3 and bonded to the semiconductor laser chip 1 and the heat sink 3; and recessed marks 13 formed on the surface of the semiconductor laser chip 1 by partially removing the electrode 11, wherein the semiconductor laser chip 1 is longer in the resonator direction than in a direction orthogonal to the resonator direction, and the recessed marks 13 are disposed within a predetermined distance from each of the front and rear end faces of the semiconductor laser chip.
摘要翻译：本发明的半导体激光装置包括：具有形成在半导体激光芯片1的表面上的电极11的半导体激光芯片1; 用于半导体激光芯片1的散热器3; 设置在半导体激光器芯片1和散热器3之间并连接到半导体激光器芯片1和散热器3的基座2; 以及通过部分地去除电极11而形成在半导体激光器芯片1的表面上的凹痕13，其中半导体激光器芯片1在谐振器方向上比在与谐振器方向正交的方向上更长，并且设置凹进的标记13 在距离半导体激光芯片的前端面和后端面的预定距离内。

37. 发明授权

US07719119B2 Semiconductor device, electronic apparatus comprising the same, and method for fabrication of substrate for semiconductor device used therein 失效
标题翻译：半导体装置，包括该半导体装置的电子装置及其中使用的半导体装置用基板的制造方法
公开(公告)号：US07719119B2
公开(公告)日：2010-05-18
申请号：US11584518
申请日：2006-10-23
申请人： Noriyuki Yoshikawa , Noboru Takeuchi , Kenichi Itou , Toshiyuki Fukuda
发明人： Noriyuki Yoshikawa , Noboru Takeuchi , Kenichi Itou , Toshiyuki Fukuda
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49811 , H01L21/4846 , H01L23/49827 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/1423 , H01L2924/15311 , H01L2924/181 , H05K1/113 , H05K3/3436 , H05K2201/0367 , H05K2201/0394 , H05K2201/09509 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.
摘要翻译：半导体器件具有上部电极和外部端子，该上部电极和外部端子突出在半导体器件用基板的两面之上，并且通过穿透电极彼此连接，除了第一绝缘膜的部分之外至少覆盖金属图案的第一绝缘膜对应于上部电极的第二绝缘膜，覆盖除了与外部端子对应的第二绝缘膜的部分之外的至少另一种金属图案的第二绝缘膜，以及连接到上部电极并放置在半导体器件的基板上的半导体元件。外部端子的焊接连接表面被定位成具有比第二绝缘膜的表面高的高度。将半导体元件放置在第一绝缘膜上并与上部电极一起用模制树脂覆盖。

38. 发明授权

US07190982B2 Radio frequency device 有权
标题翻译：射频设备
公开(公告)号：US07190982B2
公开(公告)日：2007-03-13
申请号：US10764537
申请日：2004-01-27
申请人： Kouki Yamamoto , Noriyuki Yoshikawa , Kazuhiko Ohashi
发明人： Kouki Yamamoto , Noriyuki Yoshikawa , Kazuhiko Ohashi
IPC分类号： H04M1/00
CPC分类号： H05K5/0091 , H01L2224/48091 , H01L2224/48227 , H05K3/3405 , H05K9/0039 , H01L2924/00014
摘要： In the present radio frequency device, a radio frequency circuit part and a transmission line are disposed on the top surface of a circuit board on the surface of which a ground pattern is provided, and a metal shielding cap is fixed to the circuit board so as to cover the radio frequency circuit part and the transmission path. The metal shielding cap includes: a top plate disposed above the radio frequency circuit part and substantially parallel to the circuit board; a grounded side wall being provided so as to hang down from a part of an edge of the top plate, having a spring property and being joined to the ground pattern of the circuit board, and a side wall is open except for the grounded side wall.
摘要翻译：在本射频装置中，射频电路部分和传输线设置在电路板的设置有接地图案的表面的顶表面上，金属屏蔽帽固定到电路板上，以便以覆盖射频电路部分和传输路径。金属屏蔽盖包括：顶板，设置在射频电路部分上方并且基本上平行于电路板; 接地侧壁设置成从顶板的边缘的一部分悬挂起来，具有弹簧特性并且接合到电路板的接地图案，并且侧壁是开放的，除了接地的侧壁。

39. 发明授权

US06815810B2 High-frequency semiconductor device 失效
公开(公告)号：US06815810B2
公开(公告)日：2004-11-09
申请号：US10271863
申请日：2002-10-15
申请人： Hideki Takehara , Noriyuki Yoshikawa , Kunihiko Kanazawa , Seiichi Nakatani
发明人： Hideki Takehara , Noriyuki Yoshikawa , Kunihiko Kanazawa , Seiichi Nakatani
IPC分类号： H01L2306
CPC分类号： H05K1/186 , H01L23/3121 , H01L23/5389 , H01L23/66 , H01L24/45 , H01L24/48 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H05K1/0306 , H05K1/112 , H05K1/183 , H05K3/284 , H05K3/4614 , H05K3/4629 , H01L2924/00015 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

40. 发明授权

US4572573A Dental chair operating apparatus 失效
标题翻译：牙科椅操作装置
公开(公告)号：US4572573A
公开(公告)日：1986-02-25
申请号：US425302
申请日：1982-09-28
申请人： Noriyuki Yoshikawa , Kunio Fujiyama
发明人： Noriyuki Yoshikawa , Kunio Fujiyama
IPC分类号： B29C45/00 , A47C1/06 , A61G15/02 , B29B13/00 , B29C33/00 , B29C33/30 , B29C41/00 , B29C45/17 , B29C45/26 , A47C1/035
CPC分类号： A47C1/06 , A47C1/0352 , A61G15/02 , A61G2203/74
摘要： A dental chair operating apparatus developed in relation to the underseat and the backrest. The uses for the present chair and integral underseat and backrest configuration include human dental, medical, beauty parlor, and barber shop treatment facilities and installations. The present chair, e.g. a dental chair, is one with a hip section of the underseat baseboard on top of a vertical motion apparatus on top of a base plate; a movable circular arc board with backrest baseboard tilts by an oil-pressured cylinder. The present chair configuration is basically automatic, however it may also be manually manipulated.
摘要翻译：相对于底部和靠背而开发的牙科椅操作装置。现有椅子的用途和整体的低下和靠背配置包括人牙科，医疗，美容院和理发店处理设施和设施。现在的椅子，例如一把牙科椅，是一个在底板顶部的垂直运动装置顶部的底部基座的臀部部分; 一个可靠的圆弧板，靠背踢脚板由油压缸倾斜。现在的椅子配置基本上是自动的，但也可以手动操作。

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