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31. 发明授权

US07732268B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07732268B2
公开(公告)日：2010-06-08
申请号：US11882828
申请日：2007-08-06
申请人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
发明人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1285
摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.
摘要翻译：一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域激光被照射。

32. 发明授权

US07723135B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07723135B2
公开(公告)日：2010-05-25
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

33. 发明申请

US20080188012A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080188012A1
公开(公告)日：2008-08-07
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/66
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果。

34. 发明授权

US07193693B2 Apparatus for manufacturing flat panel display devices 有权
标题翻译：用于制造平板显示装置的装置
公开(公告)号：US07193693B2
公开(公告)日：2007-03-20
申请号：US10991482
申请日：2004-11-19
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
IPC分类号： G01N21/00 , G01J1/00 , B23K26/06
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
摘要翻译：提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号。入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件，基于信号处理的结果。以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

35. 发明授权

US07183148B2 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US07183148B2
公开(公告)日：2007-02-27
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

36. 发明申请

US20060029426A1 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US20060029426A1
公开(公告)日：2006-02-09
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G03G15/00 , G03G15/22
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

37. 发明申请

US20050070035A1 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20050070035A1
公开(公告)日：2005-03-31
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

38. 发明授权

US07981701B2 Semiconductor thin film manufacturing method 有权
标题翻译：半导体薄膜制造方法
公开(公告)号：US07981701B2
公开(公告)日：2011-07-19
申请号：US11030065
申请日：2005-01-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
发明人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L22/12 , H01L27/1214 , H01L27/1285 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
摘要翻译：形成半导体薄膜的方法包括用于检测横向晶体的高灵敏度检测方法和结晶方法。在结晶方法中，激光SXL的基于时间的脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB1的同时，在所需区域中形成近似带状晶体硅膜SPSI。在检查方法中，在激光SXL关闭之后，将检查光束PRO1照射到基板。如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。检测光束PRO1由突出部TOKI散射并由检测器观测。如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

39. 发明授权

US07456428B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07456428B2
公开(公告)日：2008-11-25
申请号：US11711623
申请日：2007-02-28
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L29/04
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

40. 发明申请

US20080050893A1 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080050893A1
公开(公告)日：2008-02-28
申请号：US11882828
申请日：2007-08-06
申请人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
发明人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/479
CPC分类号： H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1285
摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.
摘要翻译：一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域激光被照射。

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