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31. 发明申请

US20120061640A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120061640A1
公开(公告)日：2012-03-15
申请号：US13037864
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。第一电极层包括具有多个开口部的金属部。开口部具有不小于10纳米且不大于50微米的当量圆直径。第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。发光层设置在第一半导体层和第二半导体层之间。第二电极层连接到第一半导体层。

32. 发明授权

US08089081B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08089081B2
公开(公告)日：2012-01-03
申请号：US12404807
申请日：2009-03-16
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
摘要翻译：一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

33. 发明申请

US20100221856A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100221856A1
公开(公告)日：2010-09-02
申请号：US12717537
申请日：2010-03-04
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
IPC分类号： H01L33/30 , H01L33/44 , H01L33/00
CPC分类号： H01L33/22 , H01L33/005
摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
摘要翻译：本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。然后在程序之后最后形成电极。该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

34. 发明申请

US20100065868A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100065868A1
公开(公告)日：2010-03-18
申请号：US12404807
申请日：2009-03-16
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
摘要翻译：一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

35. 发明授权

US08659040B2 Semiconductor light-emitting device and process for production thereof 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08659040B2
公开(公告)日：2014-02-25
申请号：US13439895
申请日：2012-04-05
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L33/005
摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
摘要翻译：本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。然后在程序之后最后形成电极。该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

36. 发明授权

US08628673B2 Resin composition for pattern formation, pattern formation method and process for producing light-emitting element 有权
标题翻译：用于图案形成的树脂组合物，图案形成方法和用于制造发光元件的方法
公开(公告)号：US08628673B2
公开(公告)日：2014-01-14
申请号：US13319928
申请日：2010-05-12
申请人： Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Yoshiaki Shirae , Tomohiro Yorisue , Akihiko Ikeda
发明人： Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Yoshiaki Shirae , Tomohiro Yorisue , Akihiko Ikeda
IPC分类号： B29D11/00
CPC分类号： C08L33/06 , C08F220/14 , C08F297/02 , C08L25/06 , C08L35/06 , C08L53/00 , C08L2205/03 , G03F7/0002 , H01L2933/0091 , C08L2666/02 , C08F212/08
摘要： Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight.
摘要翻译：公开了一种用于图案形成的树脂组合物，其能够在光的波长水平上稳定地形成图案; 使用该组合物形成具有海岛结构的图案的方法; 以及能够实现高发光效率的发光元件的制造方法。用于图案形成的树脂组合物包括：（a）含有含芳环的聚合物和聚（甲基）丙烯酸酯作为嵌段部分的特定嵌段共聚物; （b）特定含芳环聚合物的均聚物; 和（c）特定聚（甲基）丙烯酸酯的均聚物，其中所述含芳环的均聚物（b）和聚（甲基）丙烯酸酯均聚物（c）的总量相对于整个树脂组合物的比例为 0重量％〜90重量％，作为嵌段部分的嵌段共聚物（a）中含有的含芳香环的聚合物部分和含芳环的均聚物（b）的总量相对于树脂组合物的总量为10重量％〜60重量％。

37. 发明申请

US20110049556A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110049556A1
公开(公告)日：2011-03-03
申请号：US12712693
申请日：2010-02-25
申请人： Akira FUJIMOTO , Ryota Kitagawa , Koji Asakawa
发明人： Akira FUJIMOTO , Ryota Kitagawa , Koji Asakawa
IPC分类号： H01L33/40
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0083
摘要： The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and they penetrate through the metal electrode layer. That metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.
摘要翻译：本发明提供即使电力增加也能够保持高亮度强度的半导体发光装置，因此该装置适用于照明装置如灯和灯。该半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。开口的平均直径为10nm〜2μm，穿过金属电极层。该金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

38. 发明授权

US08754431B2 Light emitting device with an electrode having a through-holes 有权
标题翻译：具有带有通孔的电极的发光器件
公开(公告)号：US08754431B2
公开(公告)日：2014-06-17
申请号：US13412044
申请日：2012-03-05
申请人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
发明人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
IPC分类号： H01L33/00 , H01L33/38 , H01L33/30 , H01L33/10
CPC分类号： H01L33/30 , H01L33/10 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。第一电极层具有具有通孔的金属部分。第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。发光层设置在第一和第二半导体层之间。第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

39. 发明授权

US08450824B2 Optically transmissive metal electrode, electronic device, and optical device 有权
标题翻译：光学透射金属电极，电子器件和光学器件
公开(公告)号：US08450824B2
公开(公告)日：2013-05-28
申请号：US13405935
申请日：2012-02-27
申请人： Kenji Nakamura , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Shinji Nunotani , Takanobu Kamakura
发明人： Kenji Nakamura , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Shinji Nunotani , Takanobu Kamakura
IPC分类号： H01L27/146
CPC分类号： H01L31/022425 , H01L33/38 , H01L33/42 , Y02E10/50
摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.
摘要翻译：根据一个实施例，透光金属电极包括多个第一和第二金属线。第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。第二金属线的中心之间的第二间距在波段中超过最长波长。第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

40. 发明申请

US20130075762A1 OPTICALLY TRANSMISSIVE METAL ELECTRODE, ELECTRONIC DEVICE, AND OPTICAL DEVICE 有权
标题翻译：光传输金属电极，电子器件和光学器件
公开(公告)号：US20130075762A1
公开(公告)日：2013-03-28
申请号：US13405935
申请日：2012-02-27
申请人： Kenji NAKAMURA , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Shinji Nunotani , Takanobu Kamakura
发明人： Kenji NAKAMURA , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Shinji Nunotani , Takanobu Kamakura
IPC分类号： H01L33/62 , H05K1/00 , H01L31/0224
CPC分类号： H01L31/022425 , H01L33/38 , H01L33/42 , Y02E10/50
摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.
摘要翻译：根据一个实施例，透光金属电极包括多个第一和第二金属线。第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。第二金属线的中心之间的第二间距在波段中超过最长波长。第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

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