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31. 发明申请

US20100231088A1 WAFER, WAFER POLISHING APPARATUS, WAFER POLISHING METHOD, METHOD OF FABRICATING PIEZOELECTRIC VIBRATOR, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS AND RADIOWAVE TIMEPIECE 有权
标题翻译：滤波器，抛光抛光装置，波浪抛光方法，压电振动器，压电振动器，振荡器，电子装置和放射线计时器的制造方法
公开(公告)号：US20100231088A1
公开(公告)日：2010-09-16
申请号：US12361913
申请日：2009-01-29
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： H01L41/00 , B24C3/32 , B24B1/00
CPC分类号： H03H3/02 , B24B37/08 , B24B47/10 , B24B57/02 , H03H3/04 , H03H9/21 , H03H2003/026
摘要： To provide a wafer preventing a breakage of a crack or a chip off from being brought about in a polishing step and a polishing apparatus and a polishing method of polishing the wafer, there is provided a wafer in a shape of a plate substantially in an angular rectangular shape used as a raw material of a piezoelectric vibrator. All of corner portions D1, D2, D3, D4 substantially in the angular shape are formed in shapes of curved faces by chamfering providing curvatures. The corner portions D1, D2, D3, D4 in the shapes of the curved faces at least include a first curved face portion and a second curved face portion chamfered by curvatures different from each other or the same curvature. A reference face of a crystal orientation of the raw material is specified by the first curved face portion or the second curved face portion.
摘要翻译：为了提供防止在抛光步骤中产生裂纹或切屑的破裂的晶片以及研磨装置和抛光晶片的抛光方法，提供了一种基本上呈角度的板状的晶片用作压电振动器的原料的矩形形状。基本上呈角度形状的所有拐角部分D1，D2，D3，D4都通过倒角提供曲率形成曲面的形状。曲面形状的角部D1，D2，D3，D4至少包括由彼此不同的曲率或相同曲率的曲率倒角的第一曲面部和第二曲面部。原料的晶体取向的参照面由第一弯曲面部或第二弯曲面部指定。

32. 发明申请

US20100093186A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
公开(公告)号：US20100093186A1
公开(公告)日：2010-04-15
申请号：US12443137
申请日：2007-09-28
申请人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
发明人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
IPC分类号： H01L21/316 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/3143 , H01L21/31662 , H01L21/3185 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

33. 发明申请

US20100093185A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
标题翻译：形成硅氧烷膜，等离子体加工设备和储存介质的方法
公开(公告)号：US20100093185A1
公开(公告)日：2010-04-15
申请号：US12443044
申请日：2007-09-28
申请人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/316 , C23C16/513 , C23C16/52
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/31662 , H01L21/76224 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.
摘要翻译：本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响在低压和低氧浓度条件下进行。在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅氧化膜。在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法，具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

34. 发明授权

US07692234B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
标题翻译：非易失性半导体存储器及其制造方法，以及半导体器件及其制造方法
公开(公告)号：US07692234B2
公开(公告)日：2010-04-06
申请号：US11862928
申请日：2007-09-27
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.
摘要翻译：一种半导体器件，其特别是确保器件的可靠性，特别是在微细的区域中并且能够实现大的电容和高速操作，具有在半导体衬底的主表面的第一区域中包括栅绝缘膜，浮栅电极，层间绝缘膜，控制栅极电极以及以矩阵形式布置的第二导电类型的源极和漏极区域，具有用于隔离存储单元的浅隔离结构。当使用用绝缘膜掩埋的浅结构用于元件隔离时，可以防止微细区域中的隔离耐受电压降低，并且可以降低选择性晶体管的阈值电平的变化。当通过选择性晶体管分配存储器垫中的存储单元时，可以提高存储单元的干扰电阻。

35. 发明授权

US07681716B2 Work conveying apparatus, method for producing work and method for producing image forming apparatus 有权
标题翻译：工件输送装置，制作方法及图像形成装置的制造方法
公开(公告)号：US07681716B2
公开(公告)日：2010-03-23
申请号：US11366403
申请日：2006-03-03
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： B23P19/00
CPC分类号： B61J3/08 , B23P19/001 , B65G25/10
摘要： A work conveying apparatus including at least one movable work conveying device to support a work, a drive device capable of reciprocating by a predetermined distance in a predetermined direction, and a latching portion formed on at least one of the working conveying device and the drive device and configured to latch the working conveying device with the drive device and move the work conveying device when the drive device is moved in one direction in the reciprocating direction.
摘要翻译：一种工件输送装置，包括至少一个用于支撑工件的可移动工件输送装置，能够沿预定方向往复运动预定距离的驱动装置和形成在所述工作输送装置和所述驱动装置中的至少一个上的闩锁部分并且构造成当所述驱动装置沿着往复方向沿一个方向移动时，使所述工作输送装置与所述驱动装置锁定并移动所述工件输送装置。

36. 发明申请

US20100068074A1 CONTROL VALVE FOR VARIABLE DISPLACEMENT COMPRESSOR 审中-公开
标题翻译：可变位移压缩机的控制阀
公开(公告)号：US20100068074A1
公开(公告)日：2010-03-18
申请号：US12516621
申请日：2007-11-29
申请人： Koichi Shimada , Takashi Kobayashi
发明人： Koichi Shimada , Takashi Kobayashi
IPC分类号： F04B49/22
CPC分类号： F04B27/1804 , F04B2027/1827 , F04B2027/1831 , F04B2027/1854
摘要： A control valve is configured such that as a position of a high pressure-side valve body positioned by a solenoid is closer to one side, a degree of opening for communication of a high pressure valve portion is more widened and a pressure on the side of a discharge flow path acting on the high pressure-side valve body is weakened. Further, the control valve is configured such that as a position of a low pressure-side valve body positioned by the solenoid is closer to the other side, a degree of opening for communication of a low pressure valve portion is more widened. When the high pressure-side valve body and the low pressure-side valve body are integrally positioned on the one side by the solenoid and the low pressure-side valve body is positioned on the other side by the solenoid, the high pressure-side valve body and the low pressure-side valve body are separated from each other.
摘要翻译：控制阀被构造成使得当由螺线管定位的高压侧阀体的位置更靠近一侧时，高压阀部分的连通的开度更加扩大，并且在侧面的压力作用在高压侧阀体上的排出流路变弱。此外，控制阀被构造成使得当由螺线管定位的低压侧阀体的位置更靠近另一侧时，低压阀部分的连通的开度更大。当高压侧阀体和低压侧阀体通过螺线管一体地定位在一侧时，低压侧阀体由螺线管位于另一侧时，高压侧阀主体和低压侧阀体彼此分离。

37. 发明申请

US20100015815A1 PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM 失效
标题翻译：等离子体氧化方法，等离子体处理装置和储存介质
公开(公告)号：US20100015815A1
公开(公告)日：2010-01-21
申请号：US12443589
申请日：2007-09-27
申请人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
发明人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
IPC分类号： H01L21/31
CPC分类号： H01L21/76229 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L21/7621
摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.
摘要翻译：等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤由等离子体处理。

38. 发明授权

US07590133B2 Data communication system, data communication method, and data communication apparatus 有权
标题翻译：数据通信系统，数据通信方法和数据通信装置
公开(公告)号：US07590133B2
公开(公告)日：2009-09-15
申请号：US09253783
申请日：1999-02-22
申请人： Shinichi Hatae , Takashi Kobayashi , Mitsuo Niida , Shinji Ohnishi
发明人： Shinichi Hatae , Takashi Kobayashi , Mitsuo Niida , Shinji Ohnishi
IPC分类号： H04J12/28
CPC分类号： H04L47/10 , H04L47/13 , H04L47/18 , H04L47/30 , H04L47/365
摘要： A data communication apparatus (a) determines a segment size and a segment data size in accordance with a size of a receiving buffer of the destination node, the size of the receiving buffer being determined by the destination node in accordance with a maximum payload size that can be received by the destination node, (b) divides object data into segments in accordance with the segment size, and (c) divides each segment into a plurality of segment data in accordance with the segment data size. The data communication apparatus (c) generates packets from the plurality of segment data, and (d) transfers the packets from the data communication apparatus to the destination node via a logical connection set between te data communication apparatus and the destination node, the logical connection being set by a controller.
摘要翻译：数据通信装置（a）根据目的地节点的接收缓冲器的大小确定段大小和段数据大小，接收缓冲器的大小由目的地节点根据最大有效负载大小确定可以由目的地节点接收，（b）根据段大小将对象数据划分成段，并且（c）根据段数据大小将每个段划分成多个段数据。数据通信装置（c）从多个分段数据生成分组，（d）经由数据通信装置与目的地节点之间的逻辑连接将数据从数据通信装置传送到目的地节点，逻辑连接由控制器设置。

39. 发明授权

US07585726B2 Nonvolatile semiconductor memory devices and the fabrication process of them 有权
标题翻译：非易失性半导体存储器件及其制造工艺
公开(公告)号：US07585726B2
公开(公告)日：2009-09-08
申请号：US11350118
申请日：2006-02-09
申请人： Yoshitaka Sasago , Takashi Kobayashi
发明人： Yoshitaka Sasago , Takashi Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , G11C16/0425 , H01L27/115
摘要： The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of a control gate material, an interpoly dielectric film material, and a floating gate material, the difficulties accompanying a reduction in word line width. Further, the invention enables to avoid damage caused in the batch forming on a gate oxide film. Before forming floating gates of memory cells of a nonvolatile memory, a space enclosed by insulating layers is formed for each of the floating gates of the memory cells, so that the floating gate is buried in the space. This structure is realized by processing the floating gates in a self alignment manner after depositing the floating gate material. Therefore, it is unnecessary to perform the batch forming of the control gate material, the interpoly dielectric film material, and the floating gate material in the case of processing the control gates, thereby ensuring adequate interpoly dielectric film capacitance.
摘要翻译：本发明能够避免非易失性半导体存储器件中的耦合比的降低。由于控制栅极材料，间隔电介质膜材料和浮栅材料的分批形成的困难而引起的还原是耦合比，伴随着字线宽度的减小。此外，本发明能够避免在栅极氧化膜上的批次形成中引起的损坏。在形成非易失性存储器的存储单元的浮动栅极之前，为存储单元的每个浮置栅极形成由绝缘层包围的空间，使得浮动栅极被埋在空间中。通过在浮置栅极材料沉积之后以自对准方式处理浮置栅极来实现该结构。因此，在处理控制栅极的情况下，不需要执行控制栅极材料，多晶硅介电膜材料和浮置栅极材料的批量形成，从而确保足够的多层介电膜电容。

40. 发明申请

US20090205178A1 METHOD OF FABRICATING PIEZOELECTRIC VIBRATING PIECE, PIEZOELECTRIC VIBRATING PIECE, WAFER, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS AND RADIOWAVE TIMEPIECE 有权
标题翻译：制造压电振动片，压电振动片，波形，压电振动器，振荡器，电子装置和放射线计时器的方法
公开(公告)号：US20090205178A1
公开(公告)日：2009-08-20
申请号：US12360424
申请日：2009-01-27
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： H01L41/22 , G01R29/22
CPC分类号： H03H9/21 , H03H3/02 , H03H3/04 , H03H9/1021 , H03H2003/026 , H03H2003/0442 , Y10T29/42 , Y10T29/49147 , Y10T29/49155 , Y10T29/49798
摘要： To carry out frequency adjustment easily, accurately and efficiently and achieve low cost formation and promotion of maintenance performance without being influenced by a size of a piezoelectric vibrating piece, there is provided a method of fabricating a piezoelectric vibrating piece which is a method of fabricating a piezoelectric vibrating pieces having a piezoelectric plate 11, a pair of exciting electrodes 12, 13, and a pair of mount electrodes electrodes 15, 16 by utilizing a wafer S, the method including an outer shape forming step of forming a frame portion S1 at the wafer and forming a plurality of piezoelectric plates to be connected to the frame portion by way of a connecting portion 11a, an electrode forming step of respectively forming pairs of exciting electrodes and pairs of mount electrodes to the plurality of piezoelectric plates and forming a plurality of pairs of extended electrodes S2, S3 to be respectively electrically connected to the pairs of mount electrodes by way of the connecting portion, a frequency adjusting step of adjusting a frequency of the piezoelectric plate while applying a drive voltage between the pair of the extended electrodes, and a cutting step of fragmenting the plurality of piezoelectric plates.
摘要翻译：为了容易地，准确和有效地进行频率调整，并且不受压电振动片的尺寸的影响而实现低成本形成和维护性能的提高，提供了一种制造压电振动片的方法，该方法是制造通过利用晶片S，具有压电板11，一对激励电极12,13和一对安装电极电极15,16的压电振动片，该方法包括：外形形成步骤，用于在并且通过连接部分11a形成多个压电板以连接到框架部分;电极形成步骤，分别将多个激励电极和一对安装电极形成在多个压电板上，并形成多个压电板一对延伸电极S2，S3分别电连接到这对安装电极连接部分的方式，频率调节步骤，在施加一对延伸电极之间的驱动电压的同时调节压电板的频率，以及分割多个压电板的切割步骤。

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