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    • 32. 发明申请
    • Rotating apparatus for construction machine
    • 施工机械旋转装置
    • US20050253339A1
    • 2005-11-17
    • US10506972
    • 2003-10-10
    • Akio HoshiKazuhisa TamuraNozomu TanakaShuuji TabataKoji KawasakiYukio Yanagisawa
    • Akio HoshiKazuhisa TamuraNozomu TanakaShuuji TabataKoji KawasakiYukio Yanagisawa
    • B66C23/84E02F9/12F16J15/32
    • B66C23/84E02F9/126
    • A swinging pinion on the side of an upper swing structure is meshed with a ring gear which is provided on and around the inner periphery of an inner ring on the side of a vehicular base carrier. A grease bath is provided on the inner side of the inner ring and under a swing frame. A center joint is located in an opening which is provided in the swing frame at the center of swinging motions of the upper swing structure. The grease bath is formed by bath-forming walls around an central top plateau wall which is connected the center joint on the inner peripheral side. An annular seal member of resilient material is interposed between the top plateau wall of the grease bath and the lower side of the swing frame. The annular seal member is formed in a height which is larger than the width of spacing between the top plateau wall and the swing frame. At one side, the seal member is detachably fixed either on the side of the swing frame or on the side of the top plateau wall section. At the other side, the seal member is provided with an annular sliding portion which is held in sliding contact with the other one of the swing frame and the top plateau wall in an inclined posture in a radially inward direction.
    • 上摆动结构一侧的摆动小齿轮与设置在车辆基座的侧面上的内圈的内周侧的环形齿轮啮合。 在内圈的内侧和摆动框架下设置润滑脂。 中心接头位于在上部摆动结构的摆动运动的中心处设置在摆动框架中的开口中。 油浴是通过围绕中心顶部平台壁的浴形成壁形成的,中心顶部平台壁连接在内周侧的中心接头。 弹性材料的环形密封件插入在润滑脂的顶部平台壁和摆动框架的下侧之间。 环形密封构件形成为比顶部平台壁和摆动框架之间的间隔宽度大的高度。 在一侧,密封构件可拆卸地固定在摆动框架的侧面或顶部平台壁部分的侧面上。 在另一侧,密封构件设置有环形滑动部分,其在径向向内的方向上以倾斜姿势与摇摆框架和顶部平台壁中的另一个滑动接触。
    • 33. 发明申请
    • Condensation sensor and method of controlling condensate film in sealed space with condensation sensor
    • 冷凝传感器及冷凝传感器密封空间冷凝膜控制方法
    • US20050111003A1
    • 2005-05-26
    • US10990354
    • 2004-11-15
    • Koji Kawasaki
    • Koji Kawasaki
    • G01N21/15G01N21/59G01N21/84G01N21/00
    • G01N21/59G01N21/552G01N21/8422G01N2021/157
    • A condensation sensor detects whether hydrogen peroxide gas has condensed in a sealed space and determines the condition of a condensate film upon passage of time. The condensate film in the sealed space is controlled with the condensation sensor. The condensation sensor includes a condensate forming part with a plurality of glass plates arranged so that a direction of irradiation is substantially perpendicular to a surface direction, and the condensate forming part is disposed between a projector and a light receiver. The condensation sensor is placed inside an isolator and irradiated with laser beams. The condensate film formed on the glass plates is detected from a change in the quantity of light received by the light receiver, thus the condition of condensation on the surface of an item to be sterilized inside the isolator is presumed, and accordingly, the necessary and sufficient amount of gas introduced is determined.
    • 冷凝传感器检测过氧化氢气体是否在密封空间中冷凝,并确定冷凝膜经过时的状态。 密封空间中的冷凝膜由冷凝传感器控制。 凝结传感器包括具有多个玻璃板的冷凝物形成部件,其布置成使得照射方向基本上垂直于表面方向,并且冷凝物形成部分设置在投影仪和光接收器之间。 冷凝传感器放置在隔离器内并用激光束照射。 从玻璃板上形成的冷凝膜由光接收器接收到的光量的变化来检测,因此假定在隔离器内要消毒的物品的表面上的冷凝状态被认为是必要的, 确定足够量的气体导入。
    • 36. 发明授权
    • Power transmission device and power transmission system
    • 动力传动装置及动力传动系统
    • US08602933B2
    • 2013-12-10
    • US12848574
    • 2010-08-02
    • Koji KawasakiTakenori MatsueYuji Tokudome
    • Koji KawasakiTakenori MatsueYuji Tokudome
    • F16H3/72F16H37/06F16H37/02
    • B60K6/48B60K6/543F16H3/725F16H37/084F16H2037/0866F16H2037/088Y02T10/6221
    • A power transmission device includes a planetary gear set and a first and a second connecting mechanism. The planetary gear set receives power from a power source and outputs it to a power-driven member. The first connecting mechanism connects a first and a second rotor of the planetary gear set through a separate path. The second connecting mechanism connects the second rotor and a third rotor of the planetary gear set through a separate path. The controller is operable selectively in a first operation mode in which the second connecting mechanism is engaged, while the first connecting mechanism is disengaged and a second operation mode in which the second connecting mechanism is engaged, while the first connecting mechanism is disengaged. This ensures suitable mechanical connections among the power source, the power-driven member, and the power split mechanism which match with an operating condition of the power transmission device.
    • 动力传递装置包括行星齿轮组和第一和第二连接机构。 行星齿轮组从电源接收电力并将其输出到动力驱动部件。 第一连接机构通过单独的路径连接行星齿轮组的第一和第二转子。 第二连接机构通过单独的路径连接行星齿轮组的第二转子和第三转子。 控制器在第一连接机构被接合的第一操作模式中被选择性地操作,而第一连接机构被分离,并且在第一连接机构被分离的同时第二连接机构接合的第二操作模式。 这确保了与电力传输装置的操作条件匹配的电源,动力驱动构件和动力分配机构之间的合适的机械连接。
    • 40. 发明申请
    • NITROGEN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
    • 氮化物半导体发光元件及其制造方法
    • US20130037820A1
    • 2013-02-14
    • US13639971
    • 2011-03-17
    • Masashi TsukiharaKoji Kawasaki
    • Masashi TsukiharaKoji Kawasaki
    • H01L33/32
    • H01L33/32H01L33/007H01L33/06H01L33/14
    • A nitrogen compound semiconductor light emitting element having an n-type layer, an active layer comprising AlGaInN and a p-type layer, emitting ultraviolet radiation with an emission peak wavelength of at most 400 nm and having a high emission intensity as well as a manufacturing method thereof are provided. In the nitrogen compound semiconductor light emitting element of the present invention having an n-type layer, an active layer and a p-type layer, the active layer consists of a nitrogen compound semiconductor layer with an emission peak wavelength of at most 400 nm comprising AlGaN, and the n-type layer has an n-type AlGaN layer comprising AlGaN and a GaN protective layer which does not contain Al and has a thickness of at least 5 nm. The active layer is formed on the protective layer. The manufacturing method comprises processes of growing the n-type AlGaN layer at a high substrate temperature of at least 1000° C.; growing the GaN protective layer of at most 400 nm not containing Al thereon; interrupting the growth process and decreasing the substrate temperature; and forming the active layer on the protective layer at a low substrate temperature of less than 1000° C.
    • 具有n型层的氮化合物半导体发光元件,包含AlGaInN的有源层和p型层,发射峰值波长为400nm以下且具有高发光强度的紫外线辐射以及制造 提供了其方法。 在具有n型层,有源层和p型层的本发明的氮化合物半导体发光元件中,有源层由发射峰值波长为至多400nm的氮化合物半导体层组成,包括: AlGaN和n型层具有包含AlGaN的n型AlGaN层和不含Al且具有至少5nm的厚度的GaN保护层。 有源层形成在保护层上。 该制造方法包括在至少1000℃的高衬底温度下生长n型AlGaN层的工艺; 生长至多400nm的不含Al的GaN保护层; 中断生长过程并降低衬底温度; 并在低于1000℃的低衬底温度下在保护层上形成有源层。