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31. 发明授权

US6065341A Semiconductor physical quantity sensor with stopper portion 有权
标题翻译：具有止动部分的半导体物理量传感器
公开(公告)号：US6065341A
公开(公告)日：2000-05-23
申请号：US209414
申请日：1998-12-11
申请人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
发明人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125
CPC分类号： B81B3/0051 , G01P15/0802 , G01P15/125 , B81B2201/0235 , G01P2015/0814
摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.
摘要翻译：可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。止动部分通过锚定部电连接到梁部分。因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

32. 发明申请

US20140139241A1 CAPACITIVE HUMIDITY SENSOR 有权
标题翻译：电容式湿度传感器
公开(公告)号：US20140139241A1
公开(公告)日：2014-05-22
申请号：US14116149
申请日：2012-05-22
申请人： Minekazu Sakai , Naohisa Niimi
发明人： Minekazu Sakai , Naohisa Niimi
IPC分类号： G01N27/22
CPC分类号： G01N27/223 , G01N27/048 , G01N27/225 , H01L2224/48137 , H01L2224/8592
摘要： A humidity sensor includes a detection device with a capacitance changing with humidity at a first ratio and a reference device with a capacitance changing with humidity at a second ratio smaller than the first ratio. The detection device has detection electrodes facing each other with a first gap and a detection humidity-sensitive film covering the detection electrodes. The reference device has reference electrodes facing each other with a second gap and a reference humidity-sensitive film covering the reference electrodes. The detection humidity-sensitive film and the reference humidity-sensitive film are made from the same material and have the same thickness. The detection electrodes and the reference electrodes are made from the same material and have the same width and thickness. The second ratio peaks when the second gap is equal to a predetermined value. The second gap is smaller than the first gap and the predetermined value.
摘要翻译：一种湿度传感器包括具有以第一比例的湿度变化的电容的检测装置和具有小于第一比率的第二比率的电容随湿度变化的参考装置。检测装置具有检测电极，第一间隙彼此面对，检测用湿敏膜覆盖检测电极。参考装置具有彼此面对的具有第二间隙的参考电极和覆盖参考电极的参考湿度敏感膜。检测用湿度敏感膜和基准湿度敏感膜由相同的材料制成，厚度相同。检测电极和参考电极由相同的材料制成并且具有相同的宽度和厚度。当第二间隙等于预定值时，第二比率达到峰值。第二间隙小于第一间隙和预定值。

33. 发明申请

US20050087015A1 Method of manufacturing capacitive type dynamic quantity sensor 有权
标题翻译：制造电容式动态量传感器的方法
公开(公告)号：US20050087015A1
公开(公告)日：2005-04-28
申请号：US10994283
申请日：2004-11-23
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P2015/0814
摘要： In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.
摘要翻译：在电容型动态量传感器中，沿着与预定变形方向垂直的方向延伸的梁部分中的梁的宽度和在预定变形方向上设置在可动电极和固定电极之间的间隙的宽度大致相同。因此，防止制造误差影响电容式动态量传感器的灵敏度。例如，通过设计光束的宽度和长度上相同的间隙，允许±2.5％的制造公差误差。

34. 发明授权

US06792805B2 Capacitive acceleration sensor 有权
标题翻译：电容式加速度传感器
公开(公告)号：US06792805B2
公开(公告)日：2004-09-21
申请号：US10369198
申请日：2003-02-20
申请人： Minoru Murata , Minekazu Sakai
发明人： Minoru Murata , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： A capacitive acceleration sensor includes a supporting substrate, a movable member, and two fixed members. The movable member moves in response to a force that acts on the movable member. Each fixed member is stationary under the force. Two capacitances are formed between the movable member and the fixed members. One of the capacitances increases while the other decreases when the movable member moves in response to the force. The force includes a substantially constant force and a variable force when an acceleration is measured using the sensor. The variable force is proportional to the acceleration. The acceleration is measured on the basis of the difference between the capacitances. The capacitances are different from each other when the force that acts on the movable member is zero to reduce the difference between the capacitances that corresponds to the substantially constant force.
摘要翻译：电容式加速度传感器包括支撑基板，可移动部件和两个固定部件。可移动构件响应于作用在可动构件上的力移动。每个固定构件在力作用下是静止的。在可动构件和固定构件之间形成两个电容。当可动构件响应于力而移动时，电容之一增加而另一个减小。当使用传感器测量加速度时，该力包括基本恒定的力和可变的力。可变力与加速度成比例。基于电容之差测量加速度。当作用在可动构件上的力为零时，电容彼此不同，以减小对应于基本恒定的力的电容之间的差异。

35. 发明授权

US06753201B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06753201B2
公开(公告)日：2004-06-22
申请号：US10154784
申请日：2002-05-28
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： H01L2100
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

36. 发明授权

US06672161B2 Semiconductor dynamic quantity sensor 有权
标题翻译：半导体动量传感器
公开(公告)号：US06672161B2
公开(公告)日：2004-01-06
申请号：US09901133
申请日：2001-07-10
申请人： Minekazu Sakai , Yoshiyuki Kato
发明人： Minekazu Sakai , Yoshiyuki Kato
IPC分类号： G01P15125
CPC分类号： G01P15/125 , B81B3/0051 , B81B2201/0235 , B81B2203/0136 , B81B2203/04 , G01P2015/0814
摘要： In a dynamic quantity sensor for detecting a dynamic quantity, a movable portion having comb-shaped movable electrodes is connected to a base portion through a beam portion as a spring portion, and moves in direction Y upon receiving dynamic quantity. Comb-shaped fixed electrodes are arranged opposite to the movable electrodes through detection intervals. A Q value of vibration of the movable portion in the direction Y is smaller than {fraction (1/500)} of a resonance frequency of the movable portion in the direction Y. Therefore, free vibration of the movable portion is rapidly damped so as not to adversely affect sensor output.
摘要翻译：在用于检测动态量的动态量传感器中，具有梳形可动电极的可移动部分通过作为弹簧部分的梁部连接到基部，并且在接收到动态量时沿方向Y移动。梳状固定电极通过检测间隔与可动电极相对布置。可移动部分在方向Y上的振动的AQ值小于{分量（Y方向上的可移动部分的共振频率的1/500）。因此，可移动部分的自由振动被快速衰减，从而不会不利地影响传感器输出。

37. 发明授权

US06525400B2 Semiconductor memory device and method of manufacturing the same 失效
公开(公告)号：US06525400B2
公开(公告)日：2003-02-25
申请号：US10078506
申请日：2002-02-21
申请人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
发明人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
IPC分类号： H01L2900
CPC分类号： H01L29/7883 , H01L21/28273
摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

38. 发明授权

US06502462B2 Capacitance type dynamic quantity sensor having displacement portion and formed by wire bonding 有权
公开(公告)号：US06502462B2
公开(公告)日：2003-01-07
申请号：US09880778
申请日：2001-06-15
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： In a capacitance type dynamic quantity sensor, a movable electrode is connected to a support substrate through a frame shaped displacement portion. The displacement portion is composed of first and second beams and a beam connection part connecting the first and second beams at ends thereof. The support substrate has electrode pads for wire bonding involving vibration. The first and second beams can perform flexural vibration at a natural frequency with the beam connection part working as a free end. The shape of the beam connection part is adjusted so that the natural frequency at the flexural vibration is different from that of the vibration applied by the wire bonding.

39. 发明授权

US06494096B2 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06494096B2
公开(公告)日：2002-12-17
申请号：US09801917
申请日：2001-03-09
申请人： Minekazu Sakai , Minoru Murata
发明人： Minekazu Sakai , Minoru Murata
IPC分类号： G01P15125
CPC分类号： B81B3/0008 , B81B2201/0235 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable electrode to a first or second fixed electrode due to an electrostatic attracting force generated therebetween. The sensor has a weight portion and movable electrodes formed on both sides of which, and first and second fixed electrodes each engaging with the each of the movable electrodes. Each of the first and second fixed electrodes is disposed in parallel with each of the movable electrodes so that side faces thereof determine a detection interval and non-detection interval larger than the detection interval with side faces of adjoining two of the movable electrodes. Protrusions are formed on both of the side faces of each of the first and second fixed electrodes. These protrusions prevent the movable electrodes from adhering to the first or second fixed electrode in both of the detection interval and non-detection interval.
摘要翻译：一种半导体加速度传感器，其防止由于其间产生的静电吸引力而将可动电极粘附到第一或第二固定电极。该传感器具有一个配重部分和形成在其两侧的可动电极，并且每个可移动电极各自配置有第一和第二固定电极。第一固定电极和第二固定电极中的每一个与每个可动电极平行地设置，使得其侧面确定相邻两个可动电极的侧面的检测间隔和大于检测间隔的非检测间隔。突起形成在第一和第二固定电极中的每一个的两个侧面上。这些突起在检测间隔和非检测间隔中都防止可动电极粘附到第一或第二固定电极。

40. 发明授权

US06365458B1 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06365458B1
公开(公告)日：2002-04-02
申请号：US09661572
申请日：2000-09-14
申请人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
发明人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524 , H01L29/7883
摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.
摘要翻译：在半导体衬底的表面上形成栅极氧化膜。在对应于隧道区域的部分中形成厚度小于栅极绝缘膜厚度的隧道绝缘膜。在栅极绝缘膜上形成杂质浓度低的第一硅膜。在第一硅膜上形成杂质浓度高于第一硅膜的第二硅膜，以便与第一硅膜连接。通过绝缘膜在第二硅膜上形成第三硅膜。第二和第三硅膜分别形成浮动和控制栅极，从而形成半导体存储器件。

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