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31. 发明授权

US06654660B1 Controlling thermal expansion of mask substrates by scatterometry 有权
标题翻译：通过散射法控制掩模基板的热膨胀
公开(公告)号：US06654660B1
公开(公告)日：2003-11-25
申请号：US10287292
申请日：2002-11-04
申请人： Bhanwar Singh , Christopher F. Lyons , Bharath Rangarajan , Khoi A. Phan , Ramkumar Subramanian
发明人： Bhanwar Singh , Christopher F. Lyons , Bharath Rangarajan , Khoi A. Phan , Ramkumar Subramanian
IPC分类号： G06F1900
CPC分类号： G03F7/70425 , G03F7/70875
摘要： One aspect of the present invention relates to a system and method for controlling thermal expansion on an EUV mask during EUV photolithography. The system includes an EUV photolithography system for irradiating one or more layers of a wafer through one or more gratings of a patterned EUV mask, whereby heat accumulates on at least a portion of the patterned EUV mask during the irradiation of the one or more layers of the wafer; an EUV mask inspection system for monitoring the one or more gratings on the mask to detect expansion therein, the inspection system producing data relating to the mask; and a temperature control system operatively coupled to the inspection system for making adjustments to the EUV photolithography system in order to compensate for the detected expansion on the mask. The method involves employing feedback and feed forward control to optimize the current and future EUV photolithography processes.
摘要翻译：本发明的一个方面涉及一种用于在EUV光刻期间控制EUV掩模上的热膨胀的系统和方法。该系统包括用于通过图案化的EUV掩模的一个或多个光栅照射晶片的一个或多个层的EUV光刻系统，由此在图案化的EUV掩模的照射期间在图案化的EUV掩模的至少一部分上积聚热量晶圆; 用于监视所述掩模上的所述一个或多个光栅以检测其中的扩展的EUV掩模检查系统，所述检查系统产生与所述掩模有关的数据; 以及温度控制系统，其可操作地耦合到所述检查系统，以对EUV光刻系统进行调整，以便补偿所述掩模上检测到的膨胀。该方法涉及采用反馈和前馈控制来优化当前和未来的EUV光刻工艺。

32. 发明授权

US06632283B1 System and method for illuminating a semiconductor processing system 失效
标题翻译：用于照射半导体处理系统的系统和方法
公开(公告)号：US06632283B1
公开(公告)日：2003-10-14
申请号：US09591163
申请日：2000-06-09
申请人： Bhanwar Singh , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Ramkumar Subramanian
发明人： Bhanwar Singh , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： B05C1102
CPC分类号： H01L21/6719 , H01L21/67253
摘要： The present invention relates to illuminating an interior portion of a processing chamber in a semiconductor processing system. A light emitting diode is located in the chamber to illuminate the interior of the chamber to facilitate viewing the interior of the chamber.
摘要翻译：本发明涉及照射半导体处理系统中的处理室的内部部分。发光二极管位于腔室内以照亮腔室的内部，以便于观察腔室内部。

33. 发明授权

US06572252B1 System and method for illuminating a semiconductor processing system 有权
标题翻译：用于照射半导体处理系统的系统和方法
公开(公告)号：US06572252B1
公开(公告)日：2003-06-03
申请号：US09591085
申请日：2000-06-09
申请人： Bharath Rangarajan , Bhanwar Singh , Khoi A. Phan , Bryan K. Choo , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Khoi A. Phan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： F21V704
CPC分类号： H01L21/67005
摘要： The present invention relates to illuminating an interior portion of a processing chamber in a semiconductor processing system. A fiber optic light source is operatively associated with the processing chamber to illuminate the interior of the chamber to facilitate viewing the interior of the chamber.
摘要翻译：本发明涉及照射半导体处理系统中的处理室的内部部分。光纤光源与处理室可操作地相关联以照亮室的内部，以便于观察室的内部。

34. 发明授权

US06541184B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06541184B1
公开(公告)日：2003-04-01
申请号：US09655979
申请日：2000-09-06
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： G03C556
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

35. 发明授权

US06479820B1 Electrostatic charge reduction of photoresist pattern on development track 有权
标题翻译：光刻胶图案在显影轨上的静电电荷减少
公开(公告)号：US06479820B1
公开(公告)日：2002-11-12
申请号：US09557720
申请日：2000-04-25
申请人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo
发明人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo
IPC分类号： G03F730
CPC分类号： G03F7/40 , G03F7/405
摘要： In one embodiment, the present invention relates to a method of processing a photoresist on a semiconductor structure, involving the steps of exposing and developing the photoresist; evaluating the exposed and developed photoresist to determine if negative charges exist thereon; contacting the exposed and developed photoresist with a positive ion carrier thereby reducing any negative charges thereon; and evaluating the exposed and developed photoresist with an electron beam. In another embodiment, the present invention relates to a system for processing a patterned photoresist on a semiconductor structure, containing a charge sensor for determining if charges exist on the patterned photoresist and measuring the charges; a means for contacting the patterned photoresist with a positive ion carrier to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned photoresist and the positive ion carrier, temperature of the positive ion carrier, concentration of positive ions in the positive ion carrier, and pressure under which contact between the patterned photoresist and the positive ion carrier occurs; and a device for evaluating the patterned photoresist with an electron beam.
摘要翻译：在一个实施方案中，本发明涉及一种在半导体结构上处理光致抗蚀剂的方法，包括曝光和显影光致抗蚀剂的步骤; 评估曝光和显影的光致抗蚀剂以确定其上是否存在负电荷; 使曝光和显影的光致抗蚀剂与正离子载体接触，从而减少其上的任何负电荷; 并用电子束评估曝光和显影的光致抗蚀剂。在另一个实施例中，本发明涉及一种用于处理半导体结构上的图案化光致抗蚀剂的系统，其包含用于确定图案化光致抗蚀剂上是否存在电荷并测量电荷的电荷传感器; 用于使图案化的光致抗蚀剂与正离子载体接触以减少其上的电荷的装置; 控制器，用于设置图案化的光致抗蚀剂和正离子载体之间的接触时间中的至少一个，正离子载体的温度，正离子载体中的正离子的浓度以及图案化的光致抗蚀剂和阳离子的正极之间的接触发生离子载体; 以及用电子束评估图案化光致抗蚀剂的装置。

36. 发明授权

US06451512B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
标题翻译： UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性
公开(公告)号：US06451512B1
公开(公告)日：2002-09-17
申请号：US09565691
申请日：2000-05-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
摘要翻译：在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或在开发超薄抗蚀剂后。

37. 发明授权

US06248175B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06248175B1
公开(公告)日：2001-06-19
申请号：US09430001
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。移动系统还将喷嘴移动到偏离中心区域的第二位置，以在显影剂被旋涂时施加第二预定体积的显影剂材料到光致抗蚀剂材料层。第一位置相对于第二位置位于中心区域的相反侧。还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

38. 发明授权

US07381278B1 Using supercritical fluids to clean lenses and monitor defects 有权
标题翻译：使用超临界流体清洁镜头并监测缺陷
公开(公告)号：US07381278B1
公开(公告)日：2008-06-03
申请号：US11555564
申请日：2006-11-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A Phan , Srikanteswara Dakshina-Murthy
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A Phan , Srikanteswara Dakshina-Murthy
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译：公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。

39. 发明授权

US07262422B2 Use of supercritical fluid to dry wafer and clean lens in immersion lithography 有权
标题翻译：在浸没光刻中使用超临界流体干燥晶片并清洁透镜
公开(公告)号：US07262422B2
公开(公告)日：2007-08-28
申请号：US11173257
申请日：2005-07-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
IPC分类号： G03C5/00
CPC分类号： G03F7/70341 , G03F7/70916 , G03F7/70925
摘要： Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion space; charging the immersion space with a supercritical fluid; removing the supercritical fluid from the immersion space; and charging the immersion space with immersion liquid.
摘要翻译：公开了浸没式光刻方法和系统，其涉及通过透镜和浸没式光刻工具的浸没液体照射光致抗蚀剂，该浸没液体在与透镜接触的浸没空间和光致抗蚀剂中; 从浸没空间中去除浸没液体; 用超临界流体填充浸没空间; 从浸没空间中去除超临界流体; 并用浸没液充入浸没空间。

40. 发明授权

US07156925B1 Using supercritical fluids to clean lenses and monitor defects 有权
标题翻译：使用超临界流体清洁镜头并监测缺陷
公开(公告)号：US07156925B1
公开(公告)日：2007-01-02
申请号：US10978844
申请日：2004-11-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译：公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。

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