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31. 发明授权

US07565046B2 Mode transformers for low index high confinement waveguides 有权
标题翻译：用于低折射率高限制波导的模式变压器
公开(公告)号：US07565046B2
公开(公告)日：2009-07-21
申请号：US11954461
申请日：2007-12-12
申请人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
发明人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/1223 , B82Y20/00 , G02B6/1225 , G02B6/1228 , G02B6/305 , G02B2006/12097 , G02B2006/12195
摘要： The mode transforming structure includes a first waveguide structure. A slot waveguide region is coupled to the first waveguide structure. The slot waveguide region includes one or more complementary tapered pairs so near lossless transforming between the first waveguide structure and the slot waveguide region occurs so as to allow optical modes to be transferred between the first waveguide and the slot waveguide region.
摘要翻译：模式转换结构包括第一波导结构。缝隙波导区域耦合到第一波导结构。缝隙波导区域包括一个或多个互补锥形对，使得在第一波导结构和缝隙波导区域之间进行接近无损变换，从而允许在第一波导和缝隙波导区域之间传输光学模式。

32. 发明申请

US20090093074A1 Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches 审中-公开
标题翻译：通过顺序热退火方法从硅基纳米晶体的光发射
公开(公告)号：US20090093074A1
公开(公告)日：2009-04-09
申请号：US12137224
申请日：2008-06-11
申请人： Jae Hyung Yi , Luca Dal Negro , Lionel C. Kimerling
发明人： Jae Hyung Yi , Luca Dal Negro , Lionel C. Kimerling
IPC分类号： H01L21/28
CPC分类号： H05B33/10 , B82Y30/00 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
摘要翻译：一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。当使用SiO 2和SiN x或富Si氧化物的薄膜层时，可以通过生长后处理热退火来激发发光。在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。

33. 发明授权

US07480430B2 Partial confinement photonic crystal waveguides 有权
标题翻译：局部约束光子晶体波导
公开(公告)号：US07480430B2
公开(公告)日：2009-01-20
申请号：US11349761
申请日：2006-02-08
申请人： Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel C. Kimerling
发明人： Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel C. Kimerling
IPC分类号： G02B6/26
CPC分类号： H01L29/768
摘要： An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.
摘要翻译：光波导结构包括从光源接收光信号的通气区域。在透气区域的表面上形成光子晶体包层区域。光子晶体覆盖区域将光信号限制在通气区域内，并且沿着轴向传播光信号，同时确保光信号的接近完全传输。

34. 发明授权

US07305157B2 Vertically-integrated waveguide photodetector apparatus and related coupling methods 有权
标题翻译：垂直集成波导光电探测器及相关耦合方法
公开(公告)号：US07305157B2
公开(公告)日：2007-12-04
申请号：US11269355
申请日：2005-11-08
申请人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
发明人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/1228 , G02B6/4201 , G02B2006/12061
摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
摘要翻译：具有与CMOS处理技术通用兼容的方法制造具有与光电检测器密集地集成并有效耦合的光波导的高速光电子器件。在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。

35. 发明授权

US07190853B2 Tunable chromatic dispersion compensation 有权
标题翻译：可调色散补偿
公开(公告)号：US07190853B2
公开(公告)日：2007-03-13
申请号：US10178965
申请日：2002-06-25
申请人： John D. Joannopoulos , Shanhui Fan , Michal Lispon , Kevin M. Chen , Lionel C. Kimerling
发明人： John D. Joannopoulos , Shanhui Fan , Michal Lispon , Kevin M. Chen , Lionel C. Kimerling
IPC分类号： G02B6/26
CPC分类号： H04B10/2519
摘要： A system for dispersion compensation is provided including a plurality of optical cavities with each including a specific resonant frequency and resonant linewidth. At least one coupling element interconnects the optical cavities. The at least one coupling element defines the coupling strength between the cavities. The optical cavities are interconnected with the at least one coupled element that forms a multi-cavity structure. The multi-cavity structure generates appropriate dispersion properties for dispersion compensation purposes.
摘要翻译：提供了一种用于色散补偿的系统，包括多个光腔，每个具有特定的谐振频率和谐振线宽。至少一个耦合元件互连光腔。所述至少一个联接元件限定所述空腔之间的耦合强度。光学空腔与形成多腔结构的至少一个耦合元件互连。多腔结构为色散补偿目的产生适当的色散特性。

36. 发明授权

US06925226B2 Methods of altering the resonance of waveguide micro-resonators 有权
标题翻译：改变波导微谐振器谐振的方法
公开(公告)号：US06925226B2
公开(公告)日：2005-08-02
申请号：US10632247
申请日：2003-08-01
申请人： Desmond R. Lim , Lionel C. Kimerling
发明人： Desmond R. Lim , Lionel C. Kimerling
IPC分类号： G02B26/00 , G02B6/10 , G02B6/12 , G02B6/122 , G02B6/126 , G02B6/132 , G02B6/35 , G02F1/01 , G02F1/313 , G02B6/26
CPC分类号： G02B6/1223 , G02B6/105 , G02B6/12007 , G02B6/122 , G02B6/126 , G02B6/132 , G02B6/3536 , G02F1/011 , G02F1/0134 , G02F1/0147 , G02F1/3132 , G02F2203/15
摘要： Methods of tuning, switching or modulating, or, in general, changing the resonance of waveguide micro-resonators. Changes in the resonance can be brought about, permanently or temporarily, by changing the size of the micro-resonator with precision, by changing the local physical structure of the device or by changing the effective and group indices of refraction of the mode in the micro-resonator. Further changing the asymmetry of the index profile around a waveguide can alter the birefringence of the waveguide and allows one to control the polarization in the waveguide. This change in index profile may be used to change the polarization dependence or birefringence of the resonators.
摘要翻译：调谐，切换或调制的方法，或一般来说，改变波导微谐振器的谐振。可以通过改变微型谐振器的尺寸，通过改变器件的局部物理结构或通过改变微型谐振器的有效和组折射率来改变谐振的变化，永久或暂时地改变微谐振器的尺寸再生器进一步改变波导周围的折射率分布的不对称可以改变波导的双折射，并允许波导管中的偏振。折射率分布的这种改变可以用于改变谐振器的偏振相关性或双折射率。

37. 发明授权

US06635110B1 Cyclic thermal anneal for dislocation reduction 有权
标题翻译：循环热退火脱位减少
公开(公告)号：US06635110B1
公开(公告)日：2003-10-21
申请号：US09603572
申请日：2000-06-23
申请人： Hsin-Chiao Luan , Lionel C. Kimerling
发明人： Hsin-Chiao Luan , Lionel C. Kimerling
IPC分类号： C30B100
CPC分类号： C30B33/00 , C30B29/08 , C30B29/16 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02238 , H01L21/02255 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02667 , H01L21/02694 , H01L21/28255 , H01L21/31662 , H01L21/324
摘要： The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.
摘要翻译：本发明提供了在具有宽范围厚度的异质外延层中产生非常低的位错密度的方法，包括与常规硅CMOS处理兼容的厚度。在用于减少在不同的衬底材料上形成为外延层的半导体材料中的位错密度的方法中，外延层和衬底在小于约外延层的特征熔化温度但加大的加热温度下被加热高于该温度，其外延层的特征在于可塑性，持续第一时间。然后将外延层和衬底在低于约加热温度的冷却温度下冷却第二持续时间。这些加热和冷却步骤以选定数量的循环进行以减少外延层的位错密度。

38. 发明授权

US06352942B1 Oxidation of silicon on germanium 有权
标题翻译：锗在锗上的氧化
公开(公告)号：US06352942B1
公开(公告)日：2002-03-05
申请号：US09603269
申请日：2000-06-23
申请人： Hsin-Chiao Luan , Lionel C. Kimerling
发明人： Hsin-Chiao Luan , Lionel C. Kimerling
IPC分类号： H01L2131
CPC分类号： C30B33/00 , C30B29/08 , C30B29/16 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02238 , H01L21/02255 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02667 , H01L21/02694 , H01L21/28255 , H01L21/31662 , H01L21/324
摘要： The invention provides processes for producing a high-quality silicon dioxide layer on a germanium layer. In one example process, a layer of silicon is deposited on the germanium layer, and the silicon layer is exposed to dry oxygen gas at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. In a further example process, the silicon layer is exposed to water vapor at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. It can be preferred that the exposure to dry oxygen gas or to water vapor be carried out in an oxidation chamber at a chamber pressure that is no less than ambient pressure. In one example, the chamber pressure is above about 2 atm. The temperature at which the silicon layer is exposed to the dry oxygen gas is preferably above about 500° C., more preferably above about 600° C., even more preferably above about 700° C., and most preferably above about 800° C.
摘要翻译：本发明提供了在锗层上生产高品质二氧化硅层的方法。在一个示例性过程中，在锗层上沉积硅层，并且硅层在足以基本上仅通过热能引起硅层氧化的温度下暴露于干氧气。在另一示例性方法中，硅层在足以基本上仅通过热能引起硅层氧化的温度下暴露于水蒸汽。优选的是，在不低于环境压力的室压力下，在氧化室中进行干燥氧气或水蒸气的暴露。在一个示例中，室压力高于约2atm。硅层暴露于干氧气的温度优选高于约500℃，更优选高于约600℃，甚至更优选高于约700℃，最优选高于约800℃ 。

39. 发明授权

US4234358A Patterned epitaxial regrowth using overlapping pulsed irradiation 失效
标题翻译：使用重叠脉冲照射的图案外延再生长
公开(公告)号：US4234358A
公开(公告)日：1980-11-18
申请号：US27274
申请日：1979-04-05
申请人： George K. Celler , Lionel C. Kimerling , Harry J. Leamy , John M. Poate , George A. Rozgonyi
发明人： George K. Celler , Lionel C. Kimerling , Harry J. Leamy , John M. Poate , George A. Rozgonyi
IPC分类号： H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/268 , H01L21/0242 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02667 , H01L21/02686 , H01L21/02689 , H01L21/02694 , Y10S117/904 , Y10S117/905 , Y10S148/09 , Y10S148/093
摘要： A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
摘要翻译：描述了从结晶层去除缺陷和紊乱以及这些层的外延再生长的技术。该技术涉及在材料的有限空间区域上沉积短期的能量脉冲，从而退火另外损坏的材料并使其外延再生。在短期能量沉积之后，在邻接和重叠的区域上顺序地进行类似的处理，使得模式最终被“写入”。该图案形成基本单晶材料的连续区域。

40. 发明授权

US09046650B2 Methods and apparatus for mid-infrared sensing 有权
标题翻译：中红外感测的方法和装置
公开(公告)号：US09046650B2
公开(公告)日：2015-06-02
申请号：US14076655
申请日：2013-11-11
申请人： Pao Tai Lin , Yan Cai , Anuradha Murthy Agarwal , Lionel C. Kimerling
发明人： Pao Tai Lin , Yan Cai , Anuradha Murthy Agarwal , Lionel C. Kimerling
IPC分类号： G01J5/20 , G02B6/136 , G01N21/35 , G02B6/122
CPC分类号： G02B6/136 , G01N21/35 , G02B6/122
摘要： A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum, to probe the absorption spectrum of fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer.
摘要翻译：芯片尺寸的空气包层半导体基座波导可用作能够原位监测有机溶剂和其他分析物的中红外（中红外）传感器。该传感器使用来自硅或锗波导的消逝耦合，其在电磁光谱的中红外部分中是高度透明的，以探测波导周围的流体的吸收光谱。将中红外光束发射到暴露于特定分析物的波导中，由于周围流体中的碳，氧，氢和/或氮键的吸收而导致衰减波的光谱分量的衰减。在波导的输出处检测这些变化提供了周围流体中一种或多种化合物的类型和浓度的指示。如果需要，传感器可以用中红外光源和中红外检测器集成到硅衬底上，以形成基于芯片的光谱仪。

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