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    • 35. 发明申请
    • PIEZOELECTRIC ELEMENT DRIVING CIRCUIT
    • 压电元件驱动电路
    • US20110223044A1
    • 2011-09-15
    • US13039226
    • 2011-03-02
    • Yoshinobu NakayamaTakahiro Imai
    • Yoshinobu NakayamaTakahiro Imai
    • F04B35/04H01L41/09
    • H01L41/042H01L41/0973
    • A transformer T1 receives a sinusoidal signal on the primary side. The transformer T1 is provided with a terminal 3, a terminal 5, and a center tap 4 on the secondary side. The center tap 4 is connected to the anode of a diode D1. The cathode of the diode D1 is connected to the cathode of a diode D2 and one electrode of a capacitor C1. The other electrode of the capacitor C1 is connected to the anode of a diode D3 and a connection point of the second electrode of a piezoelectric element C2 and the first electrode of a piezoelectric element C3. The second electrode of the piezoelectric element C3 is connected to the terminal 3. The first electrode of the piezoelectric element C2 is connected to the cathode of the diode D3, the anode of the diode D2, and the terminal 5.
    • 变压器T1在初级侧接收正弦信号。 变压器T1在次级侧设置有端子3,端子5和中心抽头4。 中心抽头4连接到二极管D1的阳极。 二极管D1的阴极连接到二极管D2的阴极和电容器C1的一个电极。 电容器C1的另一个电极连接到二极管D3的阳极和压电元件C2的第二电极和压电元件C3的第一电极的连接点。 压电元件C3的第二电极连接到端子3.压电元件C2的第一电极连接到二极管D3的阴极,二极管D2的阳极和端子5。
    • 38. 发明授权
    • Single crystalline diamond and producing method thereof
    • 单晶金刚石及其制造方法
    • US07655208B2
    • 2010-02-02
    • US11402062
    • 2006-04-12
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • B01J3/06C01B31/00C30B29/04G11B5/65
    • C30B29/04C30B25/20
    • The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
    • 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石,其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时,其最大值为 在整个单晶金刚石上,相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm,并且还有一种用于制造金刚石的方法 。