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31. 发明授权

US07279954B2 On-chip temperature detection device 失效
标题翻译：片上温度检测装置
公开(公告)号：US07279954B2
公开(公告)日：2007-10-09
申请号：US10961258
申请日：2004-10-12
申请人： Kraisorn Throngnumchai , Yoshio Simoida
发明人： Kraisorn Throngnumchai , Yoshio Simoida
IPC分类号： H03K3/42
CPC分类号： G01K7/42 , G01K7/01
摘要： An on-chip temperature detection device includes: a bipolar type power transistor; a mirror transistor in which a collector current, which is proportional to a collector current of the power transistor, flows; a current detection section that detects the collector current of the mirror transistor; a voltage detection section that detects a voltage between a base and an emitter of the power transistor; and a calculation section that calculates a chip temperature of the power transistor, based upon the collector current of the mirror transistor detected by the current detection section, and upon the voltage between the base and the emitter of the power transistor detected by the voltage detection section.
摘要翻译：片上温度检测装置包括：双极型功率晶体管; 其中集成电流与功率晶体管的集电极电流成比例的反射镜晶体管; 电流检测部，其检测所述反射镜晶体管的集电极电流; 电压检测部，其检测所述功率晶体管的基极和发射极之间的电压; 以及计算部，其基于由电流检测部检测出的反射镜晶体管的集电极电流，以及由电压检测部检测到的功率晶体管的基极与发射极之间的电压，计算功率晶体管的芯片温度。

32. 发明申请

US20060233008A1 Solid-state image-sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US20060233008A1
公开(公告)日：2006-10-19
申请号：US11393429
申请日：2006-03-30
申请人： Tomokazu Kakumoto , Kraisorn Throngnumchai
发明人： Tomokazu Kakumoto , Kraisorn Throngnumchai
IPC分类号： G11C19/08
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/148 , H04N5/3651
摘要： In a solid-state image-sensing device of the invention, for acquisition of sensed-image data, a photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting, then the voltage at the end of a logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output commensurate with the amount of light incident on the photoelectric converter is delivered; for acquisition of noise data, the photoelectric converter disconnecting switch is turned on to make the forcible reset switch perform resetting, then the photoelectric converter disconnecting switch is turned off, then the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output unrelated to the amount of light incident on the photoelectric converter is delivered. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
摘要翻译：在本发明的固态图像感测装置中，为了获取感测图像数据，光电转换器断开开关导通，使得强制复位开关执行复位，然后在对数转换MOS晶体管末端的电压不连接到光电转换器断开开关的控制使得对数转换MOS晶体管根据其阈值电压被复位，然后输出与入射在光电转换器上的光量相当的输出; 为了获取噪声数据，光电转换器断开开关导通，强制复位开关进行复位，光电转换器断开开关被断开，而对数转换MOS晶体管末端的电压未连接到光电转换器断开开关受到控制，使得对数转换MOS晶体管根据其阈值电压被复位，然后输出与入射在光电转换器上的光量无关的输出。通过这种操作顺序，可以校正各个像素之间的灵敏度变化，而不用均匀的光照射。

33. 发明授权

US06449014B1 Image sensor having a low impedance reading block between pixel data lines and output line 失效
标题翻译：图像传感器在像素数据线和输出线之间具有低阻抗读取块
公开(公告)号：US06449014B1
公开(公告)日：2002-09-10
申请号：US09033915
申请日：1998-03-03
申请人： Kraisorn Throngnumchai
发明人： Kraisorn Throngnumchai
IPC分类号： H04N5335
CPC分类号： H04N5/359 , H04N5/3572
摘要： An image sensor including a plurality of data lines and a plurality of pixels arranged in a two-dimensional form, each pixel having both a horizontal address and a vertical address allocated and including a light receiving element and a switching element for drivingly connecting the light receiving element to one of the data lines which is connected to the same pixel. A reading block is interposed between each of the data lines and an output line and has a predetermined low input impedance with respect to a connection of an input end thereof to each of the data lines.
摘要翻译：一种图像传感器，包括多个数据线和以二维形式布置的多个像素，每个像素都具有分配的水平地址和垂直地址，并且包括光接收元件和用于驱动地连接光接收的开关元件元素连接到连接到同一像素的数据线之一。在每条数据线和输出线之间插入读取块，并且相对于其输入端与每条数据线的连接具有预定的低输入阻抗。

34. 发明授权

US5473276A MOS type power semiconductor switching device capable of protecting load shortcircuit problem under low heat dissipation 失效
标题翻译： MOS型功率半导体开关器件能够在低散热下保护负载短路问题
公开(公告)号：US5473276A
公开(公告)日：1995-12-05
申请号：US405455
申请日：1995-03-16
申请人： Kraisorn Throngnumchai
发明人： Kraisorn Throngnumchai
IPC分类号： H01L27/04 , H01L21/822 , H01L23/62 , H03K17/08 , H03K17/082 , H03K17/12 , H01L29/78 , G05F1/56
CPC分类号： H01L23/62 , H03K17/0822 , H01L2924/0002 , H03K2017/0806
摘要： In an MOS type power switching device, no leak current flows during an OFF-state, and a high current driveability is realized during a normal load condition. Furthermore, a drive current is reduced during a short-circuited load condition. The MOS (metal-oxide semiconductor) type power switching device with a drain terminal, a source terminal and a gate terminal, includes: a MOS type power switching element whose drain is connected to the drain terminal and whose source is connected to the source terminal; a MOS type semiconductor device whose drain is connected to the drain of the MOS type power switching element and whose gate is connected to the gate terminal together with a gate of the MOS type power switching element; a bipolar semiconductor controlling element whose collector is connected to the gate terminal together with both of the gates of the MOS type power switching element and of the MOS type semiconductor element, and whose emitter is connected to the source terminal together with the source of the MOS type power switching element; and a current limiting element connected between a source of the MOS type semiconductor device and a base of the bipolar type controlling element in such a manner that when no gate biasing voltage is applied to the gate terminal, at least MOS type semiconductor device is turned OFF, whereby no current flows from the drain terminal to the source terminal through any current paths. This current limiting element is a resistor.
摘要翻译：在MOS型电力开关装置中，在OFF状态下不产生泄漏电流，在正常负载状态下实现高电流驱动性。此外，在短路负载条件期间驱动电流减小。具有漏极端子，源极端子和栅极端子的MOS（金属氧化物半导体）型电力开关器件包括：MOS型功率开关元件，其漏极连接到漏极端子，其源极连接到源极端子 ; MOS型半导体器件，其漏极连接到MOS型功率开关元件的漏极，其栅极与MOS型功率开关元件的栅极连接到栅极端子; 双极半导体控制元件，其集电极与MOS型功率开关元件和MOS型半导体元件的栅极连接到栅极端子，并且其发射极与MOS源极连接到源极端子型功率开关元件; 以及限流元件，连接在MOS型半导体器件的源极和双极型控制元件的基极之间，使得当栅极极化电压没有施加到栅极端子时，至少MOS型半导体器件被关断，从而没有电流通过任何电流路径从漏极端子流到源极端子。该限流元件是电阻器。

35. 发明授权

US5357157A Power MOSFET circuit including short circuiting means for detecting the potential of the source terminal 失效
标题翻译：功率MOSFET电路包括用于检测源极端子的电位的短路装置
公开(公告)号：US5357157A
公开(公告)日：1994-10-18
申请号：US777616
申请日：1991-10-16
申请人： Kraisorn Throngnumchai
发明人： Kraisorn Throngnumchai
IPC分类号： H01L27/02 , H03K17/06 , H03K17/0812 , H03K17/082 , H03K17/695 , H03K17/687 , H03K3/01 , H03K17/60
CPC分类号： H03K17/063 , H01L27/0248 , H01L27/0251 , H03K17/08122 , H03K17/0822
摘要： In a high side switching circuit for switching, an inductive load with a power MOSFET on and off, whose drain is connected with a power source and whose source is connected with the inductive load, a short-circuiting means for preventing undesired turn-on of the power MOSFET by establishing a short circuit between the gate and source of the power MOSFET when the source potential of the power MOSFET becomes lower than the ground potential. Preferably, the short-circuiting means comprises a field-effect or bipolar transistor whose control electrode is grounded.
摘要翻译：在用于切换的高侧开关电路中，具有功率MOSFET导通和截止的电感负载，其漏极与电源连接，源极与感性负载连接，用于防止不期望的接通的短路装置功率MOSFET通过在功率MOSFET的源极电位变得低于地电位时在功率MOSFET的栅极和源极之间建立短路。优选地，短路装置包括其控制电极接地的场效应或双极晶体管。

36. 发明授权

US5317175A CMOS device with perpendicular channel current directions 失效
标题翻译：具有垂直通道电流方向的CMOS器件
公开(公告)号：US5317175A
公开(公告)日：1994-05-31
申请号：US827319
申请日：1992-01-29
申请人： Kraisorn Throngnumchai
发明人： Kraisorn Throngnumchai
IPC分类号： H01L21/8238 , H01L27/02 , H01L27/092 , H01L29/78 , H01L27/10
CPC分类号： H01L27/0927 , H01L27/0203
摘要： P channel MOSFET and N channel MOSFET are formed in a (011) orientated semiconductor surface in such a manner that the channel of the P channel MOSFET is perpendicular to the channel of the N channel MOSFET. This arrangement can reduce a total channel resistance. The P channel MOSFET is formed so that the channel is parallel to the direction, for example, and the N channel MOSFET is formed so that the channel is perpendicular to the direction.
摘要翻译： P沟道MOSFET和N沟道MOSFET以（011）取向的半导体表面形成，使得P沟道MOSFET的沟道垂直于N沟道MOSFET的沟道。这种布置可以减少总的通道电阻。例如，形成P沟道MOSFET，使得沟道平行于<01＆amp;上升＆amp; 1＆gt;方向，并且形成N沟道MOSFET，使得沟道垂直于<01＆上升＆1>方向。

37. 发明授权

US4963970A Vertical MOSFET device having protector 失效
标题翻译：具有保护器的垂直MOSFET器件
公开(公告)号：US4963970A
公开(公告)日：1990-10-16
申请号：US267886
申请日：1989-01-04
申请人： Kraisorn Throngnumchai , Koichi Murakami
发明人： Kraisorn Throngnumchai , Koichi Murakami
IPC分类号： H01L29/78 , H01L27/02 , H01L27/04 , H01
CPC分类号： H01L29/7804 , H01L27/0255
摘要： A vertical MOSFET device including a semiconductor layer having a first conductivity type, in which a base region having a second conductivity type is formed in the semiconductor layer, and a source region having the first conductivity type is formed in the base region, in which a gate electrode is formed at least on the above described base region via an insulating gate film to form a channel between the semiconductor layer and the source region, and a protector having PN or Schottky junction, which is formed between the source region and the gate electrode and is thermally contacted with at least one of the other members.

38. 发明申请

US20050140330A1 Control device and controlling method of inverter 有权
公开(公告)号：US20050140330A1
公开(公告)日：2005-06-30
申请号：US11014701
申请日：2004-12-20
申请人： Kraisorn Throngnumchai
发明人： Kraisorn Throngnumchai
IPC分类号： H02M7/48 , H02M7/5395 , H02P21/00 , H02P21/05 , H02P27/04 , H02P7/36
CPC分类号： H02M7/53875 , H02M1/44 , H02M7/5395 , H02P21/05
摘要： A carrier wave frequency generating unit 9 modulates a frequency f of a carrier wave in a triangular shape. Occurrence of drawbacks due to the frequency f of the carrier wave can thereby be prevented. Because the frequency f of the carrier wave can be easily computed and estimated, a delay time of control, which is due to time for computing the frequency or an integration constant of PID control, can be kept to a minimum, and motor efficiency can be prevented from deteriorating. Because a control delay time can be estimated easily, it is possible to prevent carrying out of delay compensation by feed forward, and to prevent the motor efficiency from deteriorating.

39. 发明申请

US20050046463A1 On-chip temperature detection device 失效
标题翻译：片上温度检测装置
公开(公告)号：US20050046463A1
公开(公告)日：2005-03-03
申请号：US10961258
申请日：2004-10-12
申请人： Kraisorn Throngnumchai , Yoshio Simoida
发明人： Kraisorn Throngnumchai , Yoshio Simoida
IPC分类号： H01L27/04 , G01K7/01 , G01K7/42 , H01L21/336 , H01L21/822 , H01L21/8222 , H01L21/8248 , H01L27/06 , H01L29/78 , H03L7/00
CPC分类号： G01K7/42 , G01K7/01
摘要： An on-chip temperature detection device includes: a bipolar type power transistor; a mirror transistor in which a collector current, which is proportional to a collector current of the power transistor, flows; a current detection section that detects the collector current of the mirror transistor; a voltage detection section that detects a voltage between a base and an emitter of the power transistor; and a calculation section that calculates a chip temperature of the power transistor, based upon the collector current of the mirror transistor detected by the current detection section, and upon the voltage between the base and the emitter of the power transistor detected by the voltage detection section.
摘要翻译：片上温度检测装置包括：双极型功率晶体管; 其中集成电流与功率晶体管的集电极电流成比例的反射镜晶体管; 电流检测部，其检测所述反射镜晶体管的集电极电流; 电压检测部，其检测所述功率晶体管的基极和发射极之间的电压; 以及计算部，其基于由电流检测部检测出的反射镜晶体管的集电极电流，以及由电压检测部检测到的功率晶体管的基极与发射极之间的电压，计算功率晶体管的芯片温度。

40. 发明授权

US06812722B2 On-chip temperature detection device 失效
标题翻译：片上温度检测装置
公开(公告)号：US06812722B2
公开(公告)日：2004-11-02
申请号：US10091305
申请日：2002-03-06
申请人： Kraisorn Throngnumchai , Yoshio Simoida
发明人： Kraisorn Throngnumchai , Yoshio Simoida
IPC分类号： G01R3126
CPC分类号： G01K7/42 , G01K7/01
摘要： An on-chip temperature detection device includes: a bipolar type power transistor; a mirror transistor in which a collector current, which is proportional to a collector current of the power transistor, flows; a current detection section that detects the collector current of the mirror transistor; a voltage detection section that detects a voltage between a base and an emitter of the power transistor; and a calculation section that calculates a chip temperature of the power transistor, based upon the collector current of the mirror transistor detected by the current detection section, and upon the voltage between the base and the emitter of the power transistor detected by the voltage detection section.
摘要翻译：片上温度检测装置包括：双极型功率晶体管; 其中集成电流与功率晶体管的集电极电流成比例的反射镜晶体管; 电流检测部，其检测所述反射镜晶体管的集电极电流; 电压检测部，其检测所述功率晶体管的基极和发射极之间的电压; 以及计算部，其基于由电流检测部检测出的反射镜晶体管的集电极电流，以及由电压检测部检测到的功率晶体管的基极与发射极之间的电压，计算功率晶体管的芯片温度。

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