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31. 发明授权

US08137458B2 Epitaxial growth of ZnO with controlled atmosphere 有权
标题翻译：具有受控气氛的ZnO的外延生长
公开(公告)号：US08137458B2
公开(公告)日：2012-03-20
申请号：US12028310
申请日：2008-02-08
申请人： Hiroyuki Kato , Michihiro Sano
发明人： Hiroyuki Kato , Michihiro Sano
IPC分类号： C30B29/16
CPC分类号： C30B29/16 , C23C16/405 , C30B25/14
摘要： A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b).
摘要翻译： ZnO晶体生长方法具有以下步骤：（a）制备具有能够生长暴露Zn极性平面的ZnO晶体的表面的衬底; （b）通过交替地重复富Zn条件周期和富O条件周期，在衬底表面上提供Zn和O; 和（c）在步骤（b）提供Zn和O时，在衬底的表面上提供确定杂质的导电类型。

32. 发明申请

US20110235121A1 DIGITAL MULTIPLE APPARATUS 审中-公开
标题翻译：数字多功能设备
公开(公告)号：US20110235121A1
公开(公告)日：2011-09-29
申请号：US13158612
申请日：2011-06-13
申请人： Takahiro Fuchigami , Haruhiko Ishida , Masao Yamaguchi , Sunao Tabata , Hiroyuki Kato
发明人： Takahiro Fuchigami , Haruhiko Ishida , Masao Yamaguchi , Sunao Tabata , Hiroyuki Kato
IPC分类号： G06K15/00
CPC分类号： H04N1/00204 , H04N1/00923 , H04N1/00954 , H04N1/32106 , H04N2201/0039 , H04N2201/0049 , H04N2201/0081 , H04N2201/0082 , H04N2201/0091 , H04N2201/0094 , H04N2201/3215
摘要： In a digital multiple apparatus, at least two different jobs are processed by at least two job processing units, and while job processing by one job processing unit, if there is an interruption by job processing by the other job processing unit, an end time of the job processing by the one job processing unit is predicted on the basis of job processing time required for the job processing by the other job processing unit.
摘要翻译：在数字多重装置中，至少两个不同的作业由至少两个作业处理单元处理，并且在由一个作业处理单元进行作业处理时，如果通过另一个作业处理单元的作业处理存在中断，则结束时间基于由其他作业处理单元进行作业处理所需的作业处理时间来预测一个作业处理单元的作业处理。

33. 发明申请

US20100249615A1 BLOOD PRESSURE MONITOR 有权
标题翻译：血压监测仪
公开(公告)号：US20100249615A1
公开(公告)日：2010-09-30
申请号：US12741320
申请日：2008-11-05
申请人： Tomohiro Kukita , Yukiko Mitsunami , Kenji Aritome , Hiroyuki Kato , Yoshihide Onishi
发明人： Tomohiro Kukita , Yukiko Mitsunami , Kenji Aritome , Hiroyuki Kato , Yoshihide Onishi
IPC分类号： A61B5/022
CPC分类号： A61B5/02233 , A61B2560/0261
摘要： A blood pressure monitor includes a cuff to be wound around a living body of a subject, a measuring unit for measuring blood pressure with said cuff wound around the living body of said subject, a detecting unit for detecting an inclination angle of said cuff, a specifying unit for specifying a current inclination level among a plurality of predetermined inclination levels upon measurement by said measuring unit, based on a result of detection by said detecting unit, a memory for storing therein the inclination level specified by said specifying unit, in association with blood pressure data measured by said measuring unit, and a notifying unit for providing notification of at least one past inclination level of the plurality of inclination levels stored in said memory and said current inclination level, in association with each other.
摘要翻译：血压监视器包括被卷绕在被检体的生物体上的袖带，用于测量血压的测量单元，所述袖带缠绕在所述被检体的生物体上，检测单元，用于检测所述袖带的倾斜角，指定单元，用于基于所述检测单元的检测结果，在由所述测量单元测量的多个预定倾斜度中指定当前倾斜度;存储器，用于在其中存储由所述指定单元指定的倾斜度，与由所述测量单元测量的血压数据，以及通知单元，用于相互关联地提供存储在所述存储器中的多个倾斜度和所述当前倾斜度的至少一个过去倾斜度的通知。

34. 发明申请

US20090236598A1 ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译： ZnO层和半导体发光器件
公开(公告)号：US20090236598A1
公开(公告)日：2009-09-24
申请号：US12428567
申请日：2009-04-23
申请人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/285 , H01L21/0237 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L33/16 , Y10S438/914 , Y10S438/918
摘要： A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
摘要翻译：提供了可以获得长于蓝色（例如420nm）的波长的发光并具有新颖结构的ZnO层。通过将S掺杂到ZnO层中可以获得比ZnO的带隙窄0.6eV或更大的过渡能。

35. 发明授权

US07566414B2 Method for manufacturing power-metallurgy processed Nb3Sn superconducting wire, precursor to powder-metallurgy processed Nb3Sn superconducting wire 有权
标题翻译：制造电力冶金处理Nb3Sn超导线材的方法，粉末冶金处理Nb3Sn超导线材前驱体
公开(公告)号：US07566414B2
公开(公告)日：2009-07-28
申请号：US11367459
申请日：2006-03-06
申请人： Takayoshi Miyazaki , Takayuki Miyatake , Hiroyuki Kato , Kyoji Zaitsu
发明人： Takayoshi Miyazaki , Takayuki Miyatake , Hiroyuki Kato , Kyoji Zaitsu
IPC分类号： B22F5/12 , H01L39/24
CPC分类号： H01L39/2409
摘要： A method for manufacturing a powder-metallurgy processed Nb3Sn superconducting wire is provided. In the method, a sheath made of Nb or a Nb alloy is filled with a raw material powder containing Sn. The sheath filled with the raw material powder is subjected to diameter reduction to form a wire. The wire is heat-treated to form a superconducting phase at the internal surface of the sheath. The raw material powder is prepared by adding a Sn powder to a Cu—Sn alloy powder or a Cu—Sn intermetallic compound powder, and is compacted under isotropic pressure.
摘要翻译：提供了一种制造粉末冶金处理的Nb 3 Sn超导线的方法。在该方法中，用含有Sn的原料粉末填充由Nb或Nb合金制成的护套。将填充有原料粉末的护套进行直径减小以形成导线。电线被热处理以在护套的内表面形成超导相。通过向Cu-Sn合金粉末或Cu-Sn金属间化合物粉末中添加Sn粉末，在各向同性压力下压实而制备原料粉末。

36. 发明授权

US07514772B2 Method of manufacturing a semiconductor apparatus 有权
标题翻译：制造半导体装置的方法
公开(公告)号：US07514772B2
公开(公告)日：2009-04-07
申请号：US11380128
申请日：2006-04-25
申请人： Tomoki Kobayashi , Toshiji Shimada , Akinobu Inoue , Atsunori Kajiki , Hiroyuki Kato , Hiroshi Shimizu
发明人： Tomoki Kobayashi , Toshiji Shimada , Akinobu Inoue , Atsunori Kajiki , Hiroyuki Kato , Hiroshi Shimizu
IPC分类号： H01L23/02
CPC分类号： H01L25/0655 , H01L21/561 , H01L23/295 , H01L23/3121 , H01L23/3135 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/48 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2223/6677 , H01L2224/16225 , H01L2224/24226 , H01L2224/48227 , H01L2224/82039 , H01L2224/82047 , H01L2224/97 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1531 , H01L2924/1533 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A resin layer in which adhesion to a conductive film is higher than that of a sealing resin to the conductive film is disposed on the sealing resin in which it is difficult to form the conductive film, and wiring patterns electrically connected to electronic components are disposed on the resin layer.
摘要翻译：在难以形成导电膜的密封树脂上设置有对导电膜的与导电膜的密封树脂的粘附性高的树脂层，并且与电子部件电连接的布线图案配置在树脂层。

37. 发明授权

US07438762B2 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate 有权
标题翻译：基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
公开(公告)号：US07438762B2
公开(公告)日：2008-10-21
申请号：US11509063
申请日：2006-08-24
申请人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
发明人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
IPC分类号： C30B25/12
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02631 , H01L21/02658 , H01L21/02661 , Y10T428/265
摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
摘要翻译：一种制造质量好的ZnO类化合物半导体晶体的制造方法。制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶制成的主表面，主表面的包络相对于（0001）面倾斜约2度，或减。 ZnO基化合物半导体晶体在主表面上生长。

38. 发明申请

US20080231882A1 DIGITAL MULTIPLE APPARATUS 失效
标题翻译：数字多功能设备
公开(公告)号：US20080231882A1
公开(公告)日：2008-09-25
申请号：US11688546
申请日：2007-03-20
申请人： Takahiro Fuchigami , Haruhiko Ishida , Masao Yamaguchi , Sunao Tabata , Hiroyuki Kato
发明人： Takahiro Fuchigami , Haruhiko Ishida , Masao Yamaguchi , Sunao Tabata , Hiroyuki Kato
IPC分类号： H04N1/00
CPC分类号： H04N1/00204 , H04N1/00923 , H04N1/00954 , H04N1/32106 , H04N2201/0039 , H04N2201/0049 , H04N2201/0081 , H04N2201/0082 , H04N2201/0091 , H04N2201/0094 , H04N2201/3215
摘要： In a digital multiple apparatus, at least two different jobs are processed by at least two job processing units, and while job processing by one job processing unit, if there is an interruption by job processing by the other job processing unit, an end time of the job processing by the one job processing unit is predicted on the basis of job processing time required for the job processing by the other job processing unit.
摘要翻译：在数字多重装置中，至少两个不同的作业由至少两个作业处理单元处理，并且在由一个作业处理单元进行作业处理时，如果通过另一个作业处理单元的作业处理存在中断，则结束时间基于由其他作业处理单元进行作业处理所需的作业处理时间来预测一个作业处理单元的作业处理。

39. 发明申请

US20080168652A1 Method of manufacturing a multilayer wiring board 失效
标题翻译：多层布线板的制造方法
公开(公告)号：US20080168652A1
公开(公告)日：2008-07-17
申请号：US12007040
申请日：2008-01-04
申请人： Tetsuya Koyama , Tsuyoshi Kobayashi , Hiroyuki Kato , Yoshihiro Machida
发明人： Tetsuya Koyama , Tsuyoshi Kobayashi , Hiroyuki Kato , Yoshihiro Machida
IPC分类号： H05K3/36 , H05K3/02 , H05K3/06 , H01R9/00
CPC分类号： H05K3/4614 , H05K3/462 , H05K3/4647 , H05K2203/061 , H05K2203/0733 , H05K2203/1327 , H05K2203/1476 , Y10T29/49124 , Y10T29/49126 , Y10T29/49146 , Y10T29/49147 , Y10T29/49155 , Y10T29/4916 , Y10T29/49165
摘要： First, a unilayer wiring board is fabricated, which has wiring layers formed in desired shapes on both sides of an insulating base member; and a metal bump formed on the wiring layer on one side of the insulating base member. Then, a desired number of unilayer boards are prepared and stacked up. On that case, the board disposed in the uppermost layer is prepared without having a metal bump. The boards are positioned and stacked up in such a manner that a metal bump of one of adjacent boards is connected to a corresponding wiring layer of the other board. Thereafter, resin is filled into gaps between the stacked boards, and insulating layers are formed on both sides of a multilayer board obtained through the above steps, in such a manner as to cover the entire surface except pad areas defined at predetermined positions on the wiring layers.
摘要翻译：首先，制造单层布线板，其具有在绝缘基材的两侧形成为所需形状的布线层; 以及在所述绝缘基体的一侧上的所述布线层上形成的金属凸块。然后，准备并堆叠所需数量的单层板。在这种情况下，准备设置在最上层的板，而不具有金属凸块。这些板被定位和堆叠，使得相邻板中的一个的金属凸块连接到另一个板的对应的布线层。此后，将树脂填充到堆叠板之间的间隙中，并且在通过上述步骤获得的多层板的两侧上形成绝缘层，以覆盖除了在布线上的预定位置限定的焊盘区域之外的整个表面层。

40. 发明申请

US20080167192A1 Nb3Sn superconducting wire and precursor therefor 有权
标题翻译： Nb3Sn超导线及其前驱体
公开(公告)号：US20080167192A1
公开(公告)日：2008-07-10
申请号：US11902471
申请日：2007-09-21
申请人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
发明人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
IPC分类号： H01B12/00
CPC分类号： H01L39/2409 , Y10S420/901 , Y10S428/93 , Y10S505/887 , Y10T29/49014 , Y10T428/12819
摘要： A precursor for fabricating a Nb3Sn superconducting wire by an internal Sn process includes one or a plurality of stabilizing copper portions collectively disposed in the center, each stabilizing copper portion being provided with a diffusion barrier layer in the periphery thereof, and a superconducting matrix portion disposed so as to surround the one or the plurality of stabilizing copper portions, the superconducting matrix portion including a Nb or Nb-based alloy core and a Sn or Sn-based alloy core embedded in a Cu or Cu-based alloy matrix.
摘要翻译：通过内部Sn工艺制造Nb 3 Sn超导线的前体包括一个或多个稳定的铜部分集中设置在中心，每个稳定的铜部分在其中设置有扩散阻挡层周边，以及包围一个或多个稳定化铜部分的超导矩阵部分，所述超导矩阵部分包括Nb或Nb基合金芯和嵌在Cu中的Sn或Sn基合金芯，或铜基合金基体。

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