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    • 32. 发明授权
    • Vitreous silica crucible for pulling silicon single crystal
    • 硅玻璃坩埚用于拉硅单晶
    • US08715415B2
    • 2014-05-06
    • US12752374
    • 2010-04-01
    • Makiko KodamaHiroshi KishiMinoru Kanda
    • Makiko KodamaHiroshi KishiMinoru Kanda
    • C30B15/10
    • C30B15/10C30B29/06C30B35/002
    • Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.
    • 本发明提供一种用于拉伸硅单晶的石英玻璃坩埚,其可以在短时间内熔化硅原料,并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。 石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层(11),以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层(12)。 不透明玻璃状石英层(11)具有气泡直径分布,其中直径小于40μm的气泡的含量为10%以上且小于30%,气泡的直径为40μm以上 小于90μm的是40%以上且小于80%,直径等于或大于90μm的气泡的含量为10%以上且小于30%。 包含在不透明玻璃状二氧化硅层(11)中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性,并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀,从而大大地扩大 有助于在稍后的拉动阶段坩埚的保温性能。
    • 35. 发明申请
    • METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES
    • 纯化二氧化硅颗粒,净化剂和纯化二氧化硅颗粒的方法
    • US20090257939A1
    • 2009-10-15
    • US11995694
    • 2006-10-25
    • Minoru KandaYoshiyuki Tsuji
    • Minoru KandaYoshiyuki Tsuji
    • C01B33/12F27B15/14
    • C01B33/18B01J8/1836B01J8/42B01J2208/00407B01J2208/00415B03C1/288B03C1/30B03C1/32B03C2201/16B03C2201/18C03C1/02
    • [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder.[Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.
    • [问题]提供一种具有优异的净化效果的处理方法,其中可以在短时间内除去二氧化硅粉末中的高离子性的杂质,其装置和纯化的二氧化硅粉末。 解决问题的方法二氧化硅粉末的净化方法包括:将二氧化硅粉末制成流体状态; 在高温下将纯化气体以流体状态与二氧化硅粉末接触; 从而除去二氧化硅粉末的杂质成分。 在该方法中,处于流体状态的二氧化硅粉末位于磁场区域中。 此外,二氧化硅粉末与纯化气体接触,同时通过二氧化硅粉末移动产生的电场向二氧化硅粉末施加电压。 优选地,处于流体状态的二氧化硅粉末位于10高斯或更高的磁性区域中,并且在1000℃以上的温度下与净化气体接触。