专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07535082B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US07535082B2
公开(公告)日：2009-05-19
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L23/544
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。

IPRDB

热门服务

关于我们

友情链接

联系方式