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    • 31. 发明授权
    • Deposition tool cleaning process having a moving plasma zone
    • 具有移动等离子体区域的沉积工具清洁工艺
    • US07815738B2
    • 2010-10-19
    • US11459819
    • 2006-07-25
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • C23C16/455H01L21/306
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
    • 在一个实施例中,本发明提供了一种用于清洁沉积室(100)的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤(100)。 方法(100)还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤(120),从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺(100)并入到用于清洁沉积室(205)的系统(200)和制造半导体器件(300)的方法中。
    • 37. 发明申请
    • Deposition tool cleaning process having a moving plasma zone
    • 具有移动等离子体区域的沉积工具清洁工艺
    • US20050045213A1
    • 2005-03-03
    • US10653661
    • 2003-09-02
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • B08B7/00C23C16/44B08B9/00
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
    • 在一个实施例中,本发明提供了一种用于清洁沉积室(100)的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤(100)。 方法(100)还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤(120),从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺(100)并入到用于清洁沉积室(205)的系统(200)和制造半导体器件(300)的方法中。
    • 40. 发明授权
    • Single pin crystal oscillator circuit
    • 单针晶体振荡电路
    • US5675294A
    • 1997-10-07
    • US582881
    • 1996-01-04
    • Jyn-Bang ShyuJin Zhao
    • Jyn-Bang ShyuJin Zhao
    • H03B5/36
    • H03B5/364
    • A single pin integrated oscillator circuit includes an amplifier having a first input terminal to which an external crystal may be connected, and a second input terminal which receives a feedback path from an output terminal of the amplifier. An oscillator output signal having a relatively large voltage swing is provided from the first input terminal through a buffer. The oscillator operates over a wide range of voltages and process variations, and it can accept an input signal from an external crystal or can accept any clock signal having a swing of approximately 1 V.
    • 单引脚集成振荡器电路包括具有可以连接外部晶体的第一输入端子的放大器和从放大器的输出端子接收反馈路径的第二输入端子。 通过缓冲器从第一输入端子提供具有相对较大电压摆幅的振荡器输出信号。 振荡器在宽范围的电压和工艺变化范围内工作,并且可以接受来自外部晶体的输入信号,或者可以接受具有大约1V的摆幅的任何时钟信号。