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31. 发明授权

US08846588B2 Low viscosity functional fluids 有权
标题翻译：低粘度功能液
公开(公告)号：US08846588B2
公开(公告)日：2014-09-30
申请号：US13698706
申请日：2011-06-22
申请人： Pearl Crossen , Jin Zhao
发明人： Pearl Crossen , Jin Zhao
IPC分类号： C10M129/16 , C10M129/88 , C10M129/95 , C10M169/04 , C10M129/70
CPC分类号： C10M129/70 , C10M111/04 , C10M169/04 , C10M2201/082 , C10M2207/026 , C10M2207/0406 , C10M2209/1045 , C10M2215/042 , C10M2215/22 , C10M2215/221 , C10M2227/0615 , C10N2230/02 , C10N2230/36 , C10N2240/08 , C10N2210/01 , C10M2209/1085
摘要： Low viscosity functional fluids are described which comprises methoxy polyethylene glycol. The fluids are particularly well-suited for use as DOT 4 brake fluids and provide high ERBP, WERBP, low kinematic viscosity and low SBR volume % increase.
摘要翻译：描述了包含甲氧基聚乙二醇的低粘度功能流体。这些流体特别适合用作DOT 4制动液，并提供高ERBP，WERBP，低运动粘度和低SBR体积％增加。

32. 发明申请

US20130090274A1 Low Viscosity Functional Fluids 有权
标题翻译：低粘度功能流体
公开(公告)号：US20130090274A1
公开(公告)日：2013-04-11
申请号：US13698706
申请日：2011-06-22
申请人： Pearl Crossen , Jin Zhao
发明人： Pearl Crossen , Jin Zhao
IPC分类号： C10M129/70
CPC分类号： C10M129/70 , C10M111/04 , C10M169/04 , C10M2201/082 , C10M2207/026 , C10M2207/0406 , C10M2209/1045 , C10M2215/042 , C10M2215/22 , C10M2215/221 , C10M2227/0615 , C10N2230/02 , C10N2230/36 , C10N2240/08 , C10N2210/01 , C10M2209/1085
摘要： (EN): Low viscosity functional fluids are described which comprises methoxy polyethylene glycol. The fluids are particularly well-suited for use as DOT 4 brake fluids and provide high ERBP, WERBP, low kinematic viscosity and low SBR volume % increase.
摘要翻译：（EN）：描述了包含甲氧基聚乙二醇的低粘度功能流体。这些流体特别适合用作DOT 4制动液，并提供高ERBP，WERBP，低运动粘度和低SBR体积％增加。

33. 发明申请

US20090328181A1 Service integration platform system and method for internet services 有权
标题翻译：服务一体化平台系统和互联网服务方式
公开(公告)号：US20090328181A1
公开(公告)日：2009-12-31
申请号：US12456803
申请日：2009-06-22
申请人： Wei Ye , Yueping Liang , Wenchu Cen , Lin Wang , Jin Zhao , Tingjia Chen , Seshu Zheng , Yi Zeng
发明人： Wei Ye , Yueping Liang , Wenchu Cen , Lin Wang , Jin Zhao , Tingjia Chen , Seshu Zheng , Yi Zeng
IPC分类号： G06F15/173 , H04L9/32 , G06F21/00
CPC分类号： G06F21/31 , H04L41/5054 , H04L63/08 , H04M15/49 , H04M15/51
摘要： A service integration platform system includes an interface configured to receive a service request initiated by an Independent Software Vendor (ISV) and one or more processors configured to authenticate the service request and in the event that the service request is authenticated, route the service request to an Internet Service Provider (ISP) providing the service to be further processed. The service request is routed to a deployment environment provided by the ISP in the event that the service request is received on a deployment Universal Resource Identifier (URI) corresponding to the deployment environment; the service request is routed to a test environment provided by the ISP in the event that the service request is received on a test URI corresponding to the test environment.
摘要翻译：服务集成平台系统包括被配置为接收由独立软件供应商（ISV）发起的服务请求的接口和被配置为认证服务请求的一个或多个处理器，并且在服务请求被认证的情况下，将服务请求路由到互联网服务提供商（ISP）提供服务进一步处理。如果在与部署环境对应的部署通用资源标识符（URI）上接收到服务请求，则将服务请求路由到由ISP提供的部署环境; 如果在与测试环境相对应的测试URI上接收到服务请求，服务请求被路由到由ISP提供的测试环境。

34. 发明授权

US07524777B2 Method for manufacturing an isolation structure using an energy beam treatment 有权
标题翻译：使用能量束处理制造隔离结构的方法
公开(公告)号：US07524777B2
公开(公告)日：2009-04-28
申请号：US11610758
申请日：2006-12-14
申请人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
发明人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
IPC分类号： H01L21/00
CPC分类号： H01L21/3105 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L21/823807 , H01L21/823878 , H01L29/6656 , H01L29/6659 , H01L29/7843 , H01L29/7846
摘要： The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.
摘要翻译：本发明提供一种制造半导体器件的方法。用于制造半导体器件的方法尤其可以包括在衬底的开口内形成一层或多层材料，所述开口和所述一层或多层形成隔离结构的至少一部分，并使至少一层的能量束处理，所述能量束处理被配置为改变受其影响的一个或多个层的应力，从而改变衬底中的应力。

35. 发明授权

US07423344B2 Bi-layer etch stop process for defect reduction and via stress migration improvement 有权
标题翻译：用于缺陷减少和经过应力迁移改善的双层蚀刻停止工艺
公开(公告)号：US07423344B2
公开(公告)日：2008-09-09
申请号：US11678967
申请日：2007-02-26
申请人： Tae S. Kim , Jin Zhao , Nathan J. Kruse , August J. Fischer , Ralf B. Willecke
发明人： Tae S. Kim , Jin Zhao , Nathan J. Kruse , August J. Fischer , Ralf B. Willecke
IPC分类号： H01L23/48
CPC分类号： H01L21/76801 , H01L21/76822 , H01L21/76832
摘要： A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
摘要翻译：一种在集成电路中形成膜堆叠的方法，所述方法包括在第一绝缘材料层附近淀积一层碳化硅，在该碳化硅层附近沉积一层氮化硅，以及沉积第二层介电材料邻近氮化硅层。

36. 发明申请

US20080157264A1 Shallow trench isolation devices and methods 有权
标题翻译：浅沟槽隔离装置及方法
公开(公告)号：US20080157264A1
公开(公告)日：2008-07-03
申请号：US11654329
申请日：2007-01-17
申请人： Jin Zhao , Manuel Quevedo-Lopez , Louis H. Breaux
发明人： Jin Zhao , Manuel Quevedo-Lopez , Louis H. Breaux
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481
摘要： One embodiment of the present invention relates to a method of forming an isolation structure. During this method, an isolation trench is formed within a semiconductor body. After this trench is formed, it is filled by performing multiple high-frequency plasma depositions to deposit multiple dielectric layers over the semiconductor body. A first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.
摘要翻译：本发明的一个实施例涉及形成隔离结构的方法。在该方法中，在半导体本体内形成隔离沟槽。在形成该沟槽之后，通过执行多个高频等离子体沉积来填充半导体本体上的多个电介质层。多层中的第一层以约100瓦至约900瓦的高频功率沉积。

37. 发明申请

US20080076225A1 METHOD FOR MANUFACTURING A GATE SIDEWALL SPACER USING AN ENERGY BEAM TREATMENT 有权
标题翻译：使用能量束处理方法制造闸门间隔板的方法
公开(公告)号：US20080076225A1
公开(公告)日：2008-03-27
申请号：US11533798
申请日：2006-09-21
申请人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
发明人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.
摘要翻译：本发明提供一种制造半导体器件的方法。除了其他步骤之外，用于制造半导体器件的方法可以包括在衬底上形成栅极结构，形成靠近栅极结构的侧壁的栅极侧壁间隔的至少一部分，以及使栅极侧壁间隔物的至少一部分能量束处理被配置为改变栅极侧壁间隔物的至少一部分的应力，从而改变其下的衬底中的应力。

38. 发明授权

US06248603B1 Method of measuring dielectric layer thickness using SIMS 失效
标题翻译：使用SIMS测量介电层厚度的方法
公开(公告)号：US06248603B1
公开(公告)日：2001-06-19
申请号：US09615393
申请日：2000-07-13
申请人： Clive Martin Jones , Jin Zhao
发明人： Clive Martin Jones , Jin Zhao
IPC分类号： H01L2166
CPC分类号： G01N23/00 , H01L22/12
摘要： Semiconductor structures having dielectric material layers that are below 3 nanometers in thickness can now be measured with greater precision and in less time using a SIMS device. In an example embodiment of the present invention, a method of measuring the thickness of a dielectric material layer of a semiconductor structure formed on a substrate includes directing a high energy ion beam at a portion of the substrate and sputtering off a plurality of targeted ions from the substrate. The thickness of the dielectric material layer is then determined as a function of a dosage level of the targeted ion and a density of the targeted ion in the dielectric material.
摘要翻译：具有低于3纳米厚度的介电材料层的半导体结构现在可以使用SIMS器件以更高的精度和更少的时间来测量。在本发明的示例性实施例中，测量形成在衬底上的半导体结构的电介质材料层的厚度的方法包括在衬底的一部分处引导高能量离子束，并溅射多个靶离子底物。然后确定介电材料层的厚度作为目标离子的剂量水平和介电材料中目标离子的密度的函数。

39. 发明授权

US5440026A Process for the preparation of sucrose 6-esters 失效
标题翻译：蔗糖6-酯的制备方法
公开(公告)号：US5440026A
公开(公告)日：1995-08-08
申请号：US886633
申请日：1992-05-21
申请人： Riaz A. Khan , Keith Smith , Andrew Pelter , Jin Zhao
发明人： Riaz A. Khan , Keith Smith , Andrew Pelter , Jin Zhao
IPC分类号： C07H13/04 , C07H13/00 , C07H1/00
CPC分类号： C07H13/04
摘要： A method for the preparation of a sucrose 6-ester comprises:(i) reacting sucrose with a ketene acetal in the presence of an acid catalyst in an inert organic solvent to form a sucrose alkyl 4, 6-orthoester;(ii) subjecting the sucrose alkyl 4, 6-orthoester to mild acidic hydrolysis to provide a mixture of 4- and 6-monoesters of sucrose; and(iii) treating the mixture of sucrose monoesters with a base to convert the sucrose 4-ester into sucrose 6-ester. Sucralose may be prepared by chlorination of sucrose 6-esters prepared according to the invention.
摘要翻译：蔗糖-6-酯的制备方法包括：（i）在酸催化剂存在下，在惰性有机溶剂中使蔗糖与乙烯酮缩醛反应，形成蔗糖烷基4,6-起始酯; （ii）使蔗糖烷基酯4,6-起始酯进行温和的酸性水解以提供蔗糖的4-和6-单酯的混合物; 和（iii）用碱处理蔗糖单酯的混合物以将蔗糖4-酯转化成蔗糖6-酯。三氯蔗糖可以通过根据本发明制备的蔗糖6-酯的氯化来制备。

40. 发明授权

US09394376B2 Cellulose ethers and their use 有权
标题翻译：纤维素醚及其用途
公开(公告)号：US09394376B2
公开(公告)日：2016-07-19
申请号：US13825697
申请日：2011-10-06
申请人： Roland Adden , Meinolf Brackhagen , Matthias Knarr , Jin Zhao
发明人： Roland Adden , Meinolf Brackhagen , Matthias Knarr , Jin Zhao
IPC分类号： C08B11/02 , C08B11/193 , C08L1/28 , A61J3/07 , A61K9/48 , A61K47/38
CPC分类号： C08B11/02 , A61J3/077 , A61K9/4816 , A61K9/4866 , A61K47/38 , C08B11/193 , C08L1/284
摘要： Cellulose ethers are described herein which are useful in capsules or in coatings for dosage forms. In these cellulose ethers the ether substituents are methyl groups, hydroxyalkyl groups, and optionally alkyl groups being different from methyl, the cellulose ether has an MS (hydroxyalkyl) of 0.05 to 1.00, and hydroxy groups of anhydroglucose units are substituted with methyl groups such that [s23/s26−0.2*MS(hydroxyalkyl)] is 0.35 or less, wherein s23 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 3-positions of the anhydroglucose unit are substituted with methyl groups and wherein s26 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 6-positions of the anhydroglucose unit are substituted with methyl groups.
摘要翻译：本文描述了纤维素醚，其可用于胶囊或用于剂型的包衣。在这些纤维素醚中，醚取代基是甲基，羟基烷基和任选的不同于甲基的烷基，纤维素醚具有0.05至1.00的MS（羟基烷基），脱水葡萄糖单元的羟基被甲基取代，使得 [s23 / s26-0.2 * MS（羟烷基）]为0.35以下，其中s23为脱水葡萄糖单元的摩尔分数，其中脱水葡萄糖单元的2-和3-位上的两个羟基仅被甲基取代，其中s26是脱水葡萄糖单元的摩尔分数，其中脱水葡萄糖单元的2-和6-位中的两个羟基仅被甲基取代。

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