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31. 发明授权

US07623369B2 Method and system for providing a magnetic memory structure utilizing spin transfer 有权
标题翻译：提供利用自旋转移的磁记忆体结构的方法和系统
公开(公告)号：US07623369B2
公开(公告)日：2009-11-24
申请号：US12030541
申请日：2008-02-13
申请人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C16/04
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

32. 发明申请

US20070200188A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

33. 发明申请

US20070030727A1 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US20070030727A1
公开(公告)日：2007-02-08
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

34. 发明授权

US07111382B1 Methods for fabricating redeposition free thin film CPP read sensors 有权
标题翻译：制备无沉淀薄膜CPP读取传感器的方法
公开(公告)号：US07111382B1
公开(公告)日：2006-09-26
申请号：US10175399
申请日：2002-06-18
申请人： Kenneth E. Knapp , Ronald A. Barr , Lien-Chang Wang , Benjamin P. Law , James Spallas
发明人： Kenneth E. Knapp , Ronald A. Barr , Lien-Chang Wang , Benjamin P. Law , James Spallas
IPC分类号： G11B5/127 , H05K3/14
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49044 , Y10T29/49155
摘要： Methods are provided for forming current perpendicular to the plane thin film read heads. In one embodiment, the method comprises the steps of forming a lower sensor lead, forming a lower sensor lead cladding of a low sputter yield material on the lower sensor lead, forming a sensor element on the lower sensor lead cladding, and forming an upper sensor lead coupled to the sensor element. The low sputter yield material helps to reduce redeposition of the lower sensor lead material onto side walls of the sensor element as the sensor element is being formed.
摘要翻译：提供了用于形成垂直于平面薄膜读取头的电流的方法。在一个实施例中，该方法包括以下步骤：形成下传感器引线，在下传感器引线上形成低溅射产生材料的下传感器引线包层，在下传感器引线包层上形成传感器元件，以及形成上传感器引线耦合到传感器元件。当形成传感器元件时，低的溅射产生材料有助于减小下部传感器引线材料在传感器元件的侧壁上的再沉积。

35. 发明申请

US20060102971A1 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US20060102971A1
公开(公告)日：2006-05-18
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L43/00 , H01L29/82 , G11C11/22
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

36. 发明授权

US06496330B1 Magnetic write head having a splitcoil structure 有权
标题翻译：具有分离线圈结构的磁性写头
公开(公告)号：US06496330B1
公开(公告)日：2002-12-17
申请号：US09393056
申请日：1999-09-09
申请人： Billy W. Crue, Jr. , Zhupei Shi , Mark David Thomas , Lien-Chang Wang
发明人： Billy W. Crue, Jr. , Zhupei Shi , Mark David Thomas , Lien-Chang Wang
IPC分类号： G11B517
CPC分类号： G11B5/313 , G11B2005/0013 , Y10T29/49062
摘要： A magnetoresistive head having a split coil structure including multiple, similar coil layers separated by an insulator and joined at their ends to define parallel electrical paths. The coil passes through a magnetic yoke having an open end and a closed end and is electrically insulated from the yoke. The parallel electrical paths of the separate coil layers can each be modeled as a resistor in series with an inductor, each of the paths also being in parallel with a capacitor. The split coil has a much faster current rise time than a comparable single layer coil or than multiple coils connected in series. Since the coil current provides the magneto-motive force for imparting a signal on a passing recording medium, the decreased current rise time corresponds to an increased data recording rate.
摘要翻译：一种具有分离线圈结构的磁阻头，包括由绝缘体隔开并在其端部连接以限定平行电路径的多个相似的线圈层。线圈通过具有开口端和封闭端的磁轭，并且与磁轭电绝缘。单独线圈层的并联电路可以各自被建模为与电感器串联的电阻器，每个路径也与电容器并联。分离线圈的电流上升时间比可比较的单层线圈要快得多，或多个线圈串联连接。由于线圈电流提供用于在通过的记录介质上施加信号的磁动力，所以减小的电流上升时间对应于增加的数据记录速率。

37. 发明授权

US5996213A Thin film MR head and method of making wherein pole trim takes place at the wafer level 失效
标题翻译：薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级
公开(公告)号：US5996213A
公开(公告)日：1999-12-07
申请号：US15970
申请日：1998-01-30
申请人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
发明人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/3163 , Y10T29/49032 , Y10T29/49046
摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.
摘要翻译：制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。在保护层中设置一个窗口。在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。这种结构减少了侧面写入，从而改善了非轨道性能。第二屏蔽层的宽度允许屏蔽磁阻元件。

38. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

39. 发明申请

US20080273380A1 METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES 有权
标题翻译：用于提供现场偏磁磁记录装置的方法和系统
公开(公告)号：US20080273380A1
公开(公告)日：2008-11-06
申请号：US11692090
申请日：2007-03-27
申请人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
发明人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00 , H01S4/00
CPC分类号： G11C11/16 , Y10T29/49002
摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.
摘要翻译：公开了一种用于提供磁存储器的方法和系统。该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。多个位线对应于多个磁存储单元。所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

40. 发明申请

US20070246787A1 On-plug magnetic tunnel junction devices based on spin torque transfer switching 审中-公开
标题翻译：基于自旋转矩转换的插头磁隧道结装置
公开(公告)号：US20070246787A1
公开(公告)日：2007-10-25
申请号：US11394056
申请日：2006-03-29
申请人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
发明人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

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