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31. 发明申请

US20140124806A1 Light Emitter with Coating Layers 审中-公开
标题翻译：带涂层的发光体
公开(公告)号：US20140124806A1
公开(公告)日：2014-05-08
申请号：US12607053
申请日：2009-10-27
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/32 , H01L33/44
摘要： An AlInGaN light emitting device having a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2, preferably having an index of refraction close to or greater than the index of refraction of GaN. The coating can be made from Ta2O5, Nb2O5, TiO2, or SiC and has can have a thickness between 0.01 and 10 microns. A surface of the coating material may be textured or shaped to increase its surface area and improve light extraction. A coating can be applied directly to one or multiple surfaces of the light emitting device or can be applied onto a contact material and can serve as a passivation or as a protection layer for a device.
摘要翻译：具有涂层的AlInGaN发光器件用于改进从器件提取光。涂层具有非常低的光学损耗和大于2的折射率，优选具有接近或大于GaN的折射率的折射率。涂层可以由Ta2O5，Nb2O5，TiO2或SiC制成，并且可以具有0.01至10微米的厚度。涂层材料的表面可以被纹理化或成形以增加其表面积并改善光提取。涂层可以直接施加到发光器件的一个或多个表面上，或者可以施加到接触材料上，并且可以用作器件的钝化或保护层。

32. 发明申请

US20130228808A1 Light emitter with metal-oxide coating 有权
标题翻译：具有金属氧化物涂层的发光体
公开(公告)号：US20130228808A1
公开(公告)日：2013-09-05
申请号：US11296006
申请日：2005-12-06
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/44
CPC分类号： H01L33/46 , H01L33/32 , H01L33/44
摘要： A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.
摘要翻译：一种基于AlInGaN材料系统的发光器件，其中使用涂层来改善从器件提取光。涂层具有非常低的光学损耗和大于2的折射率。在优选实施例中，涂层由Ta 2 O 5，Nb 2 O 5，TiO 2或SiC制成，并且具有约0.01至10微米的厚度。涂层材料的表面可以被纹理化或成形以增加其表面积并改善光提取。涂层材料的表面也可以被成形为设计逃逸层的光的方向性。涂层可以直接施加到发光器件的表面或多个表面，或者可以施加到接触材料上。涂层还可以用作器件的钝化或保护层。

33. 发明授权

US08384099B2 GaN based LED having reduced thickness and method for making the same 失效
标题翻译：具有减小厚度的GaN基LED及其制造方法
公开(公告)号：US08384099B2
公开(公告)日：2013-02-26
申请号：US12860162
申请日：2010-08-20
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L29/206
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

34. 发明申请

US20100141175A1 Light Sources Utilizing Segmented LEDs to Compensate for Manufacturing Variations in the Light Output of Individual Segmented LEDs 有权
标题翻译：光源利用分段LED来补偿单个分段LED的光输出中的制造变化
公开(公告)号：US20100141175A1
公开(公告)日：2010-06-10
申请号：US12393910
申请日：2009-02-26
申请人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
发明人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
IPC分类号： H05B37/02 , F23Q23/08 , H01L33/00
CPC分类号： H05B33/0827 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H05B33/083 , H05B33/0845 , H05B33/089 , H05B33/10 , H05B37/0263 , H01L2924/00
摘要： A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a controller. The power bus accepts a variable number of Segmented LEDs. The controller receives AC power and provides a power signal on the power bus. Each Segmented LED is characterized by a driving voltage that is greater than 3 times the driving voltage of a conventional LED fabricated in the same material system as the Segmented LED. The number of Segmented LEDs in the light source is chosen to compensate for variations in the light output of individual Segmented LEDs introduced by the manufacturing process. In another aspect of the invention, the number of Segmented LEDs connected to the power bus can be altered after the light source is assembled.
摘要翻译：公开了一种光源及其制造方法。光源包括并联连接到电源总线和控制器的多个分段LED。电源总线接受可变数量的分段LED。控制器接收交流电源，并在电源总线上提供电源信号。每个分段LED的特征在于驱动电压大于在与分段LED相同的材料系统中制造的常规LED的驱动电压的3倍。选择光源中的分段LED的数量来补偿由制造过程引入的各个分段LED的光输出的变化。在本发明的另一方面，在组装光源之后，可以改变连接到电力总线的分段LED的数量。

35. 发明申请

US20100127276A1 GaN Based LED with Improved Light Extraction Efficiency and Method for Making the Same 有权
标题翻译：基于GaN的LED具有改进的光提取效率及其制作方法
公开(公告)号：US20100127276A1
公开(公告)日：2010-05-27
申请号：US12688918
申请日：2010-01-18
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/42
摘要： A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括基板，发光结构和光散射层。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当从n型GaN层和p型GaN层的电子和空穴发射预定波长的光时，有源层 GaN层分别结合在一起。光散射层包括以N面表面为特征的GaN结晶层。 N面表面包括散射预定波长的光的特征。发光结构在N面和衬底之间。

36. 发明授权

US07622746B1 Highly reflective mounting arrangement for LEDs 失效
标题翻译： LED的高反射安装方式
公开(公告)号：US07622746B1
公开(公告)日：2009-11-24
申请号：US11378763
申请日：2006-03-17
申请人： Steven D. Lester , Frank Shum , Chao-Kun Lin , William So , Qingwei Mo
发明人： Steven D. Lester , Frank Shum , Chao-Kun Lin , William So , Qingwei Mo
IPC分类号： H01L31/0232
CPC分类号： H01L33/387 , H01L33/46
摘要： A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
摘要翻译：发射围绕预定波长的光的半导体器件包括包括多个层的结构，有时被称为堆叠，向至少一个半导体材料提供低电阻，高反射率和欧姆接触。

37. 发明申请

US20080035936A1 GaN based LED with improved light extraction efficiency and method for making the same 失效
标题翻译：具有提高光提取效率的GaN基LED和制造其的方法
公开(公告)号：US20080035936A1
公开(公告)日：2008-02-14
申请号：US11504435
申请日：2006-08-14
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/42
摘要： A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括基板，发光结构和光散射层。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当从n型GaN层和p型GaN层的电子和空穴发射预定波长的光时，有源层 GaN层分别结合在一起。光散射层包括以N面表面为特征的GaN结晶层。 N面表面包括散射预定波长的光的特征。发光结构在N面和衬底之间。

38. 发明授权

US06573537B1 Highly reflective ohmic contacts to III-nitride flip-chip LEDs 有权
标题翻译：与III族氮化物倒装芯片LED的高反射欧姆接触
公开(公告)号：US06573537B1
公开(公告)日：2003-06-03
申请号：US09821684
申请日：2001-03-29
申请人： Daniel A. Steigerwald , Steven D. Lester , Jonathan J. Wierer, Jr.
发明人： Daniel A. Steigerwald , Steven D. Lester , Jonathan J. Wierer, Jr.
IPC分类号： H01L3300
CPC分类号： H01L33/405 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/08 , H01L33/32 , H01L33/38 , H01L33/60 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/14 , H01L2924/0002 , H01L2924/00 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671
摘要： An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.
摘要翻译：具有高反射欧姆接触的反向III族氮化物发光器件（LED）包括不透明的，高反射性的n型和p-电极金属化，并提供优异的电流扩展。 n电极和p电极在LED有源区的峰值发射波长处每次通过吸收小于25％的入射光。

39. 发明授权

US06258618B1 Light emitting device having a finely-patterned reflective contact 有权
公开(公告)号：US06258618B1
公开(公告)日：2001-07-10
申请号：US09483293
申请日：2000-01-14
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L2100
CPC分类号： H01L33/38 , H01L33/20 , H01L33/22 , H01L33/46 , H01L2933/0091
摘要： The invention is an AlInGaN light-emitting device (LED) that includes a p-type contact made of highly-reflective material with closely-spaced openings that increase light extraction efficiency. The minimum dimension of the openings is ¼ of the wavelength of the emitted light and is preferably comparable to the distance current flows laterally in the p-layers of the device. The openings in the metal occupy 20-80% of the top surface of the contact and are finely spaced to achieve transparency and uniform light emission. An optional dielectric encapsulant may be deposited over the p-type contact to improve the contact's adhesion by tacking it down at regular intervals, and to improve light extraction. The surface of the epitaxial layers may be etched in the openings to scatter light in the semiconductor, increasing light extraction. A reflective layer may be applied to the bottom surface of the LED to increase the light extraction efficiency.

40. 发明授权

US6091085A GaN LEDs with improved output coupling efficiency 失效
标题翻译： GaN LED具有改善的输出耦合效率
公开(公告)号：US6091085A
公开(公告)日：2000-07-18
申请号：US26465
申请日：1998-02-19
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00 , H01L33/02 , H01L33/22
CPC分类号： H01L33/025 , H01L33/007 , H01L33/22 , H01L21/24
摘要： An LED having a higher light coupling efficiency than prior art devices, particularly those based on GaN. An LED according to the present invention includes a substrate having a top surface, a first layer of a semiconducting material deposited on the top surface of the substrate, a light generation region deposited on the first layer, and a second layer of semiconducting material deposited on the first layer. Electrical contacts are connected to the first and second layers. In one embodiment, the top surface of the substrate includes protrusions and/or depressions for scattering light generated by the light generation region. In a second embodiment, the surface of the second layer that is not in contact with the first layer includes a plurality of protrusions having facets positioned such that at least a portion of the light generated by light generation layer strikes the facets and exits the surface of the second layer. In a third embodiment, the second layer includes a plurality of channels extending from the surface of the second layer that is not in contact with the light generation layer. The channels are filled with a material having an index of refraction less that that of the semiconducting material.
摘要翻译：具有比现有技术的器件，特别是基于GaN的器件更高的光耦合效率的LED。根据本发明的LED包括具有顶表面的衬底，沉积在衬底的顶表面上的半导体材料的第一层，沉积在第一层上的发光区域和沉积在第一层上的第二层半导体材料第一层。电触头连接到第一和第二层。在一个实施例中，衬底的顶表面包括用于散射由光产生区域产生的光的突起和/或凹陷。在第二实施例中，不与第一层接触的第二层的表面包括多个突起，其具有面，所述多个突起的定位使得由光产生层产生的光的至少一部分撞击小面并离开表面第二层。在第三实施例中，第二层包括从不与光产生层接触的第二层的表面延伸的多个通道。通道填充有折射率小于半导体材料折射率的材料。

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