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31. 发明授权

US5855677A Method and apparatus for controlling the temperature of reaction chamber walls 失效
标题翻译：用于控制反应室壁温度的方法和装置
公开(公告)号：US5855677A
公开(公告)日：1999-01-05
申请号：US831797
申请日：1997-04-08
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
IPC分类号： C23C16/44 , C23C16/48 , C23C16/52 , H01L21/00
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译：一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。该装置包含用于测量室壁温度的温度测量装置。将测量的温度与预定的目标温度进行比较。闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。护罩形成支撑并包围反应室的壳体的一部分。

32. 发明授权

US5476359A Robotically loaded epitaxial deposition apparatus 失效
公开(公告)号：US5476359A
公开(公告)日：1995-12-19
申请号：US968223
申请日：1992-10-29
申请人： David W. Severns , Brian Tompson , Paul R. Lindstrom , David K. Carlson
发明人： David W. Severns , Brian Tompson , Paul R. Lindstrom , David K. Carlson
IPC分类号： H01L21/205 , C23C16/54 , C30B25/02 , C30B35/00 , H01L21/673 , H01L21/687 , B65G47/00
CPC分类号： H01L21/68764 , C23C16/4401 , C23C16/54 , C30B25/02 , C30B35/005 , H01L21/68707 , H01L21/68771
摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.

33. 发明授权

US5179677A Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity 失效
标题翻译：用于加强各种红外波段的基板加热装置和方法，以达到均匀强度
公开(公告)号：US5179677A
公开(公告)日：1993-01-12
申请号：US651668
申请日：1991-02-06
申请人： Roger N. Anderson , Thomas E. Deacon , David K. Carlson
发明人： Roger N. Anderson , Thomas E. Deacon , David K. Carlson
IPC分类号： H01L21/205 , C23C16/48 , H01L21/00 , H01L21/22 , H01L21/31
CPC分类号： H01L21/67115 , C23C16/481
摘要： A reflector array employs a number of linear, tubular heater lamps arranged in a circle concentric with the substrate to be heated. Some of the lamps have focusing reflectors and the remainder have dispersive reflectors. A peripheral cylindrical reflector surrounds the lamps and their associated reflectors. The combined reflectors permit balancing the thermal radiation intensity across the surface of the substrate.

34. 发明授权

US5104276A Robotically loaded epitaxial deposition apparatus 失效
标题翻译：机械装载外延沉积装置
公开(公告)号：US5104276A
公开(公告)日：1992-04-14
申请号：US745818
申请日：1991-08-16
申请人： David W. Severns , Brian Tompson , Paul B. Lindstrom , David K. Carlson
发明人： David W. Severns , Brian Tompson , Paul B. Lindstrom , David K. Carlson
IPC分类号： H01L21/673
CPC分类号： H01L21/68764 , H01L21/68771
摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.
摘要翻译：携带用于处理的半导体晶片的感受体在其上端从柔性附件悬挂下来并进入用于处理的反应室。在处理完成时，基座垂直取出以允许机器人卸载经处理的晶片并加载未处理的晶片。为了在装载操作期间固定基座的位置，支撑托架被移动到位置以接合基座的下端。有毒和腐蚀性的氯化物蒸汽通过连接到支撑架的真空管线同时从反应室中排出。

35. 发明授权

US4928626A Reactant gas injection for IC processing 失效
标题翻译：反应物气体注入用于IC加工
公开(公告)号：US4928626A
公开(公告)日：1990-05-29
申请号：US353929
申请日：1989-05-19
申请人： David K. Carlson , Paul R. Lindstrom
发明人： David K. Carlson , Paul R. Lindstrom
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45591
摘要： An epitaxial reactor system provides for enhanced gas flow control and, thus, deposition uniformity. Gross reactant gas flow is set by a main flow controller which delivers unequal amounts to a reaction chamber via two nozzle assemblies. A supplemental flow controlled by an auxiliary flow controller is used to balance the flow rates through the nozzle assemblies so as to reduce spiralling of the gas flow within the chamber. Vertical ridges on a shroud within the reaction chamber help guide incoming gases vertically, further minimizing spiralling. The direction of gas flow from each nozzle assembly is controlled by two actuators, one controlling orientation along a coarse diagonal to obtain an overall vertical uniformity of deposition; the other actuator controls orientation along a fine diagonal to balance inter- and intra-wafer deposition uniformity. This arrangement optimizes the convenience in attaining vertical uniformity. Within each nozzle assembly, a nozzle includes an apertured ball which pivots between two TEFLON rings which are urged against the ball by a lock nut. The compression and frictional forces are adjusted so that a nozzle orientation can be maintained while allowing orientation to be changed by applying force through the actuators. This avoids having to disassemble components to reorient the nozzles.

36. 发明授权

US4478322A Lockup clutch control system 失效
标题翻译：锁止离合器控制系统
公开(公告)号：US4478322A
公开(公告)日：1984-10-23
申请号：US257292
申请日：1981-04-24
申请人： David K. Carlson , William G. Burnia , William J. Haley
发明人： David K. Carlson , William G. Burnia , William J. Haley
IPC分类号： F16H47/06 , F16H61/14 , B60K41/28
CPC分类号： F16H47/065 , F16H61/143 , Y10T477/735 , Y10T477/743
摘要： An electronic control system for a lockup clutch includes a control system for receiving a vehicle speed signal and, as a function of adjustable engagement and release threshold signals, controlling a solenoid valve to engage and release a lockup clutch. The point of lockup is set by a potentiometer to represent a first vehicle speed, and the point of release is set by a variable resistor at a second speed, lower than the first. The variable resistor is switched into the circuit only after the first threshold level is passed and the clutch is locked up. A signal from the brake pedal overrides the threshold established in the control system to provide clutch disengagement as soon as the brake pedal is depressed. Various circuit components protect the control system from inadvertent damage by the driver and/or vehicle maintenance personnel.
摘要翻译：用于锁止离合器的电子控制系统包括用于接收车速信号的控制系统，并且作为可调接合和释放阈值信号的功能，控制电磁阀接合和释放锁止离合器。锁定点由电位器设置以表示第一车速，并且释放点由可变电阻器以低于第一速度的第二速度设置。仅在通过第一阈值电平并且离合器被锁定之后，可变电阻器才被切换到电路中。一旦制动踏板被按下，来自制动踏板的信号就会超过控制系统中建立的阈值，以提供离合器分离。各种电路部件保护控制系统免受驾驶员和/或车辆维护人员的意外损坏。

37. 发明授权

US09512520B2 Semiconductor substrate processing system 有权
标题翻译：半导体衬底处理系统
公开(公告)号：US09512520B2
公开(公告)日：2016-12-06
申请号：US13441382
申请日：2012-04-06
申请人： Errol Antonio C. Sanchez , David K. Carlson , Satheesh Kuppurao
发明人： Errol Antonio C. Sanchez , David K. Carlson , Satheesh Kuppurao
IPC分类号： C23C16/54 , C23C16/06 , C23C16/44 , C23C16/455 , H01L21/67
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：提供了用于处理衬底的设备。在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件，所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从处理室。

38. 发明授权

US09032990B2 Chemical delivery system 有权
标题翻译：化学品输送系统
公开(公告)号：US09032990B2
公开(公告)日：2015-05-19
申请号：US13441371
申请日：2012-04-06
申请人： Marcel E. Josephson , David K. Carlson , Steve Jumper , Errol Antonio C. Sanchez
发明人： Marcel E. Josephson , David K. Carlson , Steve Jumper , Errol Antonio C. Sanchez
IPC分类号： F16L35/00 , G05D7/06
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

39. 发明授权

US08980005B2 Liner assembly for chemical vapor deposition chamber 有权
标题翻译：用于化学气相沉积室的衬套组件
公开(公告)号：US08980005B2
公开(公告)日：2015-03-17
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/458 , C23C16/44 , C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

40. 发明授权

US08658540B2 Methods for low temperature conditioning of process chambers 有权
标题翻译：处理室低温调理方法
公开(公告)号：US08658540B2
公开(公告)日：2014-02-25
申请号：US13156082
申请日：2011-06-08
申请人： Yi-Chiau Huang , David K. Carlson , Errol Antonio C. Sanchez , Zhiyuan Ye
发明人： Yi-Chiau Huang , David K. Carlson , Errol Antonio C. Sanchez , Zhiyuan Ye
IPC分类号： H01L21/306 , B08B6/00 , B44C1/22
CPC分类号： H01L21/67115 , H01L21/68742
摘要： Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
摘要翻译：本文提供了从处理室内表面除去残留物的方法。在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。

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