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31. 发明申请

US20120079982A1 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 有权
标题翻译：用于臭氧固化和后处理水分处理的模块
公开(公告)号：US20120079982A1
公开(公告)日：2012-04-05
申请号：US13247687
申请日：2011-09-28
申请人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
发明人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
IPC分类号： B05C13/02 , F26B25/08 , F26B25/06
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.
摘要翻译：具有多个沉积室的基板处理系统和用于在沉积室，加载锁定保持区域和固化和处理模块中的一个或多个之间移动基板的一个或多个机器人臂。衬底固化和处理模块附接到负载锁定衬底保持区域，并且可以包括：用于在包含臭氧的气氛中固化电介质层的固化室，以及用于在包含水的气氛中处理固化的电介质层的处理室汽。腔室可以垂直对准，具有一个或多个通道门，并且可以包括加热系统，以分别在两个或更多个温度之间调节固化和/或加热室。

32. 发明授权

US07848076B2 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置
公开(公告)号：US07848076B2
公开(公告)日：2010-12-07
申请号：US11888311
申请日：2007-07-31
申请人： Kadthala Ramaya Narendranath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Goodhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Kadthala Ramaya Narendranath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Goodhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.
摘要翻译：一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。一个实施例包括板和电介质部件，其中介电部件插入板中。板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

33. 发明授权

US08108981B2 Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
公开(公告)号：US08108981B2
公开(公告)日：2012-02-07
申请号：US11888327
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P17/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T29/49117 , Y10T29/49885
摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
摘要翻译：一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。将电介质层抛光至规定的厚度。在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

34. 发明申请

US20080063810A1 In-situ process state monitoring of chamber 审中-公开
标题翻译：室的原位过程状态监测
公开(公告)号：US20080063810A1
公开(公告)日：2008-03-13
申请号：US11508524
申请日：2006-08-23
申请人： Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
发明人： Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01J37/32972 , C23C16/4401 , C23C16/52 , H01J37/32935
摘要： The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.
摘要翻译：可以在现场监测维护程序之后的室的过程状态，以确保室准备好进行处理，同时将由于维护过程的后期影响引起的浪费和停机时间最小化。可以使用分析工具来分析处理室中的体积等离子体的组成以捕获等离子体的发射光谱。可以分析光谱以产生当前室条件的模型，其可以使用诸如多变量主成分分析的统计分析方法与理想室条件的模型进行比较。如果当前和理想模型与设定的置信水平相匹配，则腔室条件对于加工设备是可接受的，并且可以停止循环工件或其他等离子体清洁过程的任何处理。

35. 发明授权

US08409355B2 Low profile process kit 有权
标题翻译：低调的流程套件
公开(公告)号：US08409355B2
公开(公告)日：2013-04-02
申请号：US12109187
申请日：2008-04-24
申请人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
发明人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

36. 发明申请

US20090034148A1 Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
公开(公告)号：US20090034148A1
公开(公告)日：2009-02-05
申请号：US11888327
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T29/49117 , Y10T29/49885
摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
摘要翻译：一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。将电介质层抛光至规定的厚度。在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

37. 发明申请

US20090034147A1 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置
公开(公告)号：US20090034147A1
公开(公告)日：2009-02-05
申请号：US11888311
申请日：2007-07-31
申请人： Kadthala Ramaya Narendrnath , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky , Muhammad Rasheed , Tony Kaushal
发明人： Kadthala Ramaya Narendrnath , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky , Muhammad Rasheed , Tony Kaushal
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.
摘要翻译：一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。一个实施例包括板和电介质部件，其中介电部件插入板中。板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

38. 发明授权

US09202736B2 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing 有权
公开(公告)号：US09202736B2
公开(公告)日：2015-12-01
申请号：US11888341
申请日：2007-07-31
申请人： Kadthala Ramaya Narendrnath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Kadthala Ramaya Narendrnath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P6/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , B23P6/00 , H02N13/00
摘要： A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

39. 发明申请

US20090034149A1 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：用于对具有降低的等离子体渗透和电弧放电的静电卡盘进行翻新的方法
公开(公告)号：US20090034149A1
公开(公告)日：2009-02-05
申请号：US11888341
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , B23P6/00 , H02N13/00
摘要： A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.
摘要翻译：一种用于对至少一部分静电卡盘进行翻新的方法。该方法包括从静电卡盘的流体分配元件移除第一介质成分并用第二介电元件代替第一介电元件。

40. 发明申请

US20160035544A1 WAFER CARRIER WITH INDEPENDENT ISOLATED HEATER ZONES 审中-公开
标题翻译：带独立隔离加热器区域的拖车
公开(公告)号：US20160035544A1
公开(公告)日：2016-02-04
申请号：US14614199
申请日：2015-02-04
申请人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvill
发明人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvill
IPC分类号： H01J37/32 , H01L21/687 , C23C16/52 , H01L21/67 , C23C16/458 , C23C16/46
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.
摘要翻译：用独立的隔离加热器区域描述晶片载体。在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器，冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

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