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    • 32. 发明授权
    • Compounds for the treatment of metabolic disorders
    • 用于治疗代谢紊乱的化合物
    • US07361686B2
    • 2008-04-22
    • US10553936
    • 2004-04-20
    • Kirvin L. HodgeShalini SharmaRobert KaufmanAlbert C. LeeReid W. von Borstel
    • Kirvin L. HodgeShalini SharmaRobert KaufmanAlbert C. LeeReid W. von Borstel
    • C07C229/00C07C205/00C07C63/00A01N43/12
    • C07C69/734A61K31/235
    • Agents useful for the treatment of various metabolic disorders, such as insulin resistance syndrome, diabetes, hyper-lipidemia, fatty liver disease, cachexia, obesity, atherosclerosis and arteriosclerosis are disclosed. Formula (I) wherein n is 1 or 2; m is 2 or 3; q is 0 or 1; t is 0 or 1; R2 is alkyl having from 1 to 3 carbon atoms; R3 is hydrogen, halo, alkyl having from 1 to 3 atoms, or alkoxy having from 1 to 3 carbon atoms; A is phenyl, unsubstituted or substituted by 1 or 2 groups selected from: halo, alkyl having 1 or 2 carbon atoms, perfluoromethyl, alkoxy having 1 or 2 carbon atoms, and perfluoromethoxy; or cycloalkyl having from 3 to 6 ring carbon atoms wherein the cycloalkyl is unsubstituted or one or two ring carbons are independently mono-substituted by methyl or ethyl; or a 5 or 6 membered heteroaromatic ring having 1 or 2 ring heteroatoms selected from N, S and O and the heteroaromatic ring is covalently bound to the remainder of the compound of formula I by a ring carbon; and R1 is hydrogen or alkyl having 1 or 2 carbon atoms. Alternatively, when R1 is hydrogen, the biologically active agent can be a pharmaceutically acceptable salt of the compound of Formula (I)
    • 公开了可用于治疗诸如胰岛素抵抗综合征,糖尿病,高脂血症,脂肪肝疾病,恶病质,肥胖症,动脉粥样硬化和动脉硬化的各种代谢疾病的药剂。 式(I)其中n为1或2; m为2或3; q为0或1; t为0或1; R 2是具有1至3个碳原子的烷基; R 3是氢,卤素,具有1至3个原子的烷基或具有1至3个碳原子的烷氧基; A是未取代的或被1或2个选自:卤素,具有1或2个碳原子的烷基,全氟甲基,具有1或2个碳原子的烷氧基和全氟甲氧基取代的苯基; 或具有3至6个环碳原子的环烷基,其中环烷基是未取代的或一个或两个环碳独立地被甲基或乙基单取代; 或具有1或2个选自N,S和O的环杂原子的5或6元杂芳环,杂芳环通过环碳与式I化合物的其余部分共价结合; R 1是氢或具有1或2个碳原子的烷基。 或者,当R 1是氢时,生物活性剂可以是式(I)化合物的药学上可接受的盐,
    • 34. 发明申请
    • Histone deacetylase inhibitors based on alpha-ketoepoxide compounds
    • 基于α-酮氧化物化合物的组蛋白脱乙酰酶抑制剂
    • US20050282890A1
    • 2005-12-22
    • US11198293
    • 2005-08-08
    • Hsuan-Yin Lan-HargestRobert Kaufman
    • Hsuan-Yin Lan-HargestRobert Kaufman
    • C07D303/32A61K31/336
    • C07D303/32
    • Histone deacetylase is a metallo-enzyme with zinc at the active site. Compounds having a zinc-binding moiety, for example, an alpha-ketoepoxide group, such as an alpha-ketothio group, can inhibit histone deacetylase. Histone deacetylase inhibition can repress gene expression, including expression of genes related to tumor suppression. Accordingly, inhibition of histone deacetylase can provide an alternate route for treating cancer, hematological disorders, e.g., hemoglobinopathies, autosomal dominant disorders, e.g. spinal muscular atrophy and Huntington's disease, genetic related metabolic disorders, e.g., cystic fibrosis and adrenoleukodystrophy, or to stimulate hematopoietic cells ex vivo.
    • 组蛋白脱乙酰酶是在活性位点具有锌的金属酶。 具有锌结合部分的化合物,例如α-酮氧化物基团,例如α-酮硫基,可以抑制组蛋白脱乙酰酶。 组蛋白脱乙酰酶抑制可抑制基因表达,包括与肿瘤抑制相关的基因的表达。 因此,组蛋白脱乙酰酶的抑制可以提供治疗癌症的替代途径,血液学病症,例如血红蛋白病,常染色体显性疾病,例如常染色体显性疾病。 脊髓性肌肉萎缩和亨廷顿病,遗传相关的代谢紊乱,例如囊性纤维化和肾上腺脑白质营养不良,或离体刺激造血细胞。
    • 35. 发明申请
    • Novel 3,3-diphenylpropylamines useful in therapy
    • 用于治疗的新型3,3-二苯基丙胺
    • US20050004223A1
    • 2005-01-06
    • US10832555
    • 2004-04-26
    • John SlatterRaymond Charles GrabiakRobert Kaufman
    • John SlatterRaymond Charles GrabiakRobert Kaufman
    • A61P13/06C07C217/62A61K31/195A61K31/137
    • C07C215/52C07C217/62
    • Novel 3,3-diphenylpropylamines of the formula and any stereoisomers thereof; wherein R1 represents —H or —CH3; R2 represents —CX3, —CR2-1X2, —CR2-1R2-2X, or —CR2-1R2-2H, wherein X represents halogen, and R2-1 and R2-2 independently represent —H or —(C1-C4 alkyl), optionally substituted with halogen; R3 and R4 independently represent —H, —OCH3, —OH, —CONH2, —SO2NH2, —F, —Cl, —Br, —I, —CF3, or —(C1-C4 alkyl), optionally substituted with one or two —OH, —(C1-C4 alkoxy), —COOH, or —CO—O—(C1-C3 alkyl); and R5 and R6 independently represent C1-C6 alkyl, optionally substituted with hydroxyl, wherein R5 and R6 together contain at least three carbon atoms, and wherein R5 and R6 may form a ring together with the amine nitrogen; provided that R2 comprises at least one halogen; or a physiologically acceptable acid addition salt thereof; the 3,3-diphenylpropylamines for use as medicaments, use of the 3,3-diphenylpropylamines for the manufacture of specific medicaments, and pharmaceutical compositions comprising the 3,3-diphenylpropylamines. The present invention also includes a method of treatment involving administration of the 3,3-diphenylpropylamines.
    • 下式的新型3,3-二苯基丙胺及其任何立体异构体; 其中R1表示-H或-CH3; R2表示-CX3,-CR2-1X2,-CR2-1R2-2X或-CR2-1R2-2H,其中X表示卤素,R2-1和R2-2独立地表示-H或 - (C1-C4烷基) ,任选被卤素取代; R 3和R 4独立地表示-H,-OCH 3,-OH,-CONH 2,-SO 2 NH 2,-F,-Cl,-Br,-I,-CF 3或 - (C 1 -C 4烷基) -OH, - (C1-C4烷氧基),-COOH或-CO-O-(C1-C3烷基); 并且R 5和R 6独立地表示任选被羟基取代的C 1 -C 6烷基,其中R 5和R 6一起含有至少三个碳原子,并且其中R 5和R 6可与胺氮一起形成环; 条件是R 2包含至少一个卤素; 或其生理上可接受的酸加成盐; 用作药物的3,3-二苯基丙胺,用于制备特定药物的3,3-二苯基丙胺,以及包含3,3-二苯基丙胺的药物组合物。 本发明还包括涉及3,3-二苯基丙胺的给药的方法。
    • 36. 发明授权
    • Apparatus for plating wafers, substrates and other articles
    • 用于电镀晶片,基板和其他物品的设备
    • US06419805B1
    • 2002-07-16
    • US09638709
    • 2000-08-15
    • Robert KaufmanGary C. Downes
    • Robert KaufmanGary C. Downes
    • C25B900
    • H01L21/2885C25D7/123C25D17/001C25D17/008Y10S204/07
    • A plating apparatus is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.
    • 公开了一种电镀装置,其特别可用于改善电镀速率,改善通孔的电镀,改善跨晶片表面的电镀沉积的均匀性,并最小化对晶片的损伤。 关于提高电镀速度和通孔的电镀,电镀装置将晶片浸入电镀液浴中,并且将电镀液体持续地引向晶片的表面。 将晶片浸入电镀液浴中可以减少通孔内捕获的气穴的发生,从而使其更容易固定。 关于提高电镀沉积的均匀性,电镀装置和方法实现了浴内的随机水平流体流动,以减少在晶片表面上引起不均匀电镀沉积的相对长的水平流体流动的发生。
    • 37. 发明授权
    • Apparatus and method for inserting a wafer, substrate or other article into a process module
    • 将晶片,基板或其它物品插入到处理模块中的装置和方法
    • US06322313B1
    • 2001-11-27
    • US09611303
    • 2000-07-06
    • Robert KaufmanGary C. Downes
    • Robert KaufmanGary C. Downes
    • B65G1133
    • H01L21/67742H01L21/68707
    • An apparatus and method for inserting and removing a wafer into and from a plating apparatus, includes an elongated primary arm having a wafer seat for supporting the wafer, an elongated secondary arm for supporting the primary arm, and a mounting surface for supporting the secondary arm. The apparatus further includes a drive band mechanically coupled to the primary arm for causing the movement thereof. The drive band includes a portion wound around a drum that is driven by a motor. The motor, in rotating the drum, causes the drive band to move the primary arm along an axis between a retracted position wherein the primary arm, the secondary arm, and the mounting surface are in a stacked relationship, and an extended position wherein the secondary arm protrudes from the mounting surface along the axis, and the primary arm protrudes from the secondary arm along the axis.
    • 一种用于将电镀设备插入电镀设备和从电镀设备中取出晶片的设备和方法包括具有用于支撑晶片的晶片座的细长主臂,用于支撑主臂的细长辅助臂和用于支撑第二臂的安装表面 。 该装置还包括机械地联接到主臂的驱动带,用于使其运动。 驱动带包括缠绕在由马达驱动的滚筒上的部分。 马达在使滚筒旋转时使驱动带沿着一个轴线移动主臂,该缩回位置在其中主臂,辅助臂和安装表面处于堆叠关系的缩回位置和延伸位置之间,其中次级 臂从安装表面沿轴线突出,并且主臂沿着轴从次臂伸出。
    • 39. 发明授权
    • Apparatus and method for electroplating wafers, substrates and other articles
    • 用于电镀晶片,基板和其它物品的装置和方法
    • US06287443B1
    • 2001-09-11
    • US09638496
    • 2000-08-15
    • Robert KaufmanGary C. DownesDaniel J. Gramarossa
    • Robert KaufmanGary C. DownesDaniel J. Gramarossa
    • C25D500
    • H01L21/2885C25D7/123C25D17/001C25D17/008Y10S204/07
    • A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.
    • 公开了一种电镀装置和方法,其特别可用于改善电镀速率,改善通孔的电镀,改善跨晶片表面的电镀沉积的均匀性,并最小化对晶片的损伤。 关于提高电镀速度和通孔的电镀,电镀装置和方法将晶片浸入电镀液浴中,并且将电镀液持续地引向晶片表面。 将晶片浸入电镀液浴中可以减少通孔内捕获的气穴的发生,从而使其更容易固定。 电镀流体朝向晶片表面的连续引导增加了离子浓度梯度,这又提高了电镀速率。 关于提高电镀沉积的均匀性,电镀装置和方法实现了浴内的随机水平流体流动,以减少在晶片表面上引起不均匀电镀沉积的相对长的水平流体流动的发生。