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31. 发明申请

US20070007881A1 Photo-luminescent liquid crystal display 有权
标题翻译：光致发光液晶显示屏
公开(公告)号：US20070007881A1
公开(公告)日：2007-01-11
申请号：US11410621
申请日：2006-04-25
申请人： Byung-ki Kim , Seoung-jae Im , Jae-young Choi , Eun-sung Lee , Eun-joo Jang , Jae-hee Cho
发明人： Byung-ki Kim , Seoung-jae Im , Jae-young Choi , Eun-sung Lee , Eun-joo Jang , Jae-hee Cho
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： B82Y10/00 , B82Y20/00 , C09K11/642 , C09K11/773 , C09K11/7731 , C09K11/7734 , C09K11/7738 , C09K11/7739 , C09K11/7768 , C09K11/778 , C09K11/7786 , C09K11/7787 , C09K11/7789 , C09K11/7794 , G02F1/133617 , H01J1/74
摘要： A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.
摘要翻译：光致发光液晶显示器（PL LCD）包括：光控制单元，其包括调制UV光的液晶（LC）层和驱动LC层的电极; 以及通过透过光控制单元的紫外线发光的发光层。发光层包括具有量子限制效应的无机荧光体和半导体量子点（QD）。 PL LCD包括将具有高量子效率的量子点添加到具有比其它颜色更低的光利用效率的发光物质中，例如具有非常低的量子效率的红色荧光体以提高光利用效率，从而改善色彩平衡。

32. 发明申请

US20060281209A1 Light emitting device and method of manufacturing the same 有权
公开(公告)号：US20060281209A1
公开(公告)日：2006-12-14
申请号：US11506837
申请日：2006-08-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

33. 发明申请

US20060226431A1 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20060226431A1
公开(公告)日：2006-10-12
申请号：US11450389
申请日：2006-06-12
申请人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/22
摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.
摘要翻译：提供了一种发光器件及其制造方法。发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布完成此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

34. 发明授权

US07098482B2 Monolithic white light emitting device 有权
标题翻译：单片白光发光装置
公开(公告)号：US07098482B2
公开(公告)日：2006-08-29
申请号：US11071223
申请日：2005-03-04
申请人： Jae-hee Cho , Suk-ho Yoon , Jeong-wook Lee
发明人： Jae-hee Cho , Suk-ho Yoon , Jeong-wook Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L33/06 , H01L33/325
摘要： A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.
摘要翻译：提供了一种单片白光发光装置。在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。包含在单片白色发光器件中的有源层的数量是一个或两个。当双层白色发光器件中包含两个有源层时，在两个有源层之间插入包层。根据该发光结构，可以通过半导体发出白色的光，因此不需要荧光体。与需要荧光体的帮助的传统的白色发光器件相比，单片白色发光器件以低成本容易地制造并应用于广泛的领域。

35. 发明申请

US20110272706A1 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20110272706A1
公开(公告)日：2011-11-10
申请号：US13188297
申请日：2011-07-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/02 , H01L33/50
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

36. 发明授权

US08002412B2 Projection system employing semiconductor diode 失效
标题翻译：采用半导体二极管的投影系统
公开(公告)号：US08002412B2
公开(公告)日：2011-08-23
申请号：US11508910
申请日：2006-08-24
申请人： Jae-hee Cho
发明人： Jae-hee Cho
IPC分类号： G03B21/00
CPC分类号： H04N9/3105 , B82Y20/00 , G02B5/003 , G02B26/02 , G02F1/017 , G02F2001/0155 , G03B21/005
摘要： A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.
摘要翻译：投影系统包括照亮多个单色光的光源模块，至少一个光调制器，根据每种颜色信号调制由光源模块照亮的光;将由光调制器调制的单色光组合的彩色组合棱镜，形成图像，投影透镜将由彩色组合棱镜形成的图像投影到屏幕上。以像素为单位设置包括P型半导体层，本征半导体层和N型半导体层的半导体二极管，以根据反向偏置电压的值吸收或发送单色光。

37. 发明申请

US20100285622A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20100285622A1
公开(公告)日：2010-11-11
申请号：US12842096
申请日：2010-07-23
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/10 , H01L33/02
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

38. 发明授权

US07566910B2 GaN-based compound semiconductor light emitting device 有权
标题翻译： GaN系化合物半导体发光元件
公开(公告)号：US07566910B2
公开(公告)日：2009-07-28
申请号：US11220581
申请日：2005-09-08
申请人： Hyun-soo Kim , Jae-hee Cho
发明人： Hyun-soo Kim , Jae-hee Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/20
摘要： A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-type electrode formed on the p-type semiconductor layer; an n-type electrode formed on a second region separated from the first region of the n-type semiconductor layer; a dielectric layer formed on a sidewall of a stack comprising the p-type semiconductor layer, the active layer, and the n-type semiconductor layer; and a reflective layer formed on the dielectric layer.
摘要翻译：提供了一种GaN基化合物半导体发光器件。半导体发光器件包括衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p型电极; 形成在与所述n型半导体层的所述第一区域分离的第二区域上的n型电极; 在包括p型半导体层，有源层和n型半导体层的堆叠的侧壁上形成的介电层; 以及形成在电介质层上的反射层。

39. 发明申请

US20060180819A1 Reflective electrode and compound semiconductor light emitting device including the same 审中-公开
标题翻译：反射电极和包含该反射电极的化合物半导体发光器件
公开(公告)号：US20060180819A1
公开(公告)日：2006-08-17
申请号：US11220722
申请日：2005-09-08
申请人： Hyun-soo Kim , Jae-hee Cho
发明人： Hyun-soo Kim , Jae-hee Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： A reflective electrode and a compound semiconductor light emitting device including the same are provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device including an n-type compound semiconductor layer, an active layer, and the p-type compound semiconductor layer, has an ohmic contact layer formed at a portion of the upper surface of the p-type compound semiconductor layer in a predetermined width, and a reflective electrode layer covering the ohmic contact layer and a portion of the upper surface of the p-type compound semiconductor layer not covered by the ohmic contact layer, wherein contact areas for directly contacting the reflective electrode layer and the p-type compound semiconductor layer are arranged on the upper surface of the p-type compound semiconductor layer.
摘要翻译：提供反射电极和包括该反射电极的化合物半导体发光器件。在包括n型化合物半导体层，有源层和p型化合物半导体层的化合物半导体发光器件的p型化合物半导体层上形成的反射电极在其一部分形成有欧姆接触层的p型化合物半导体层的上表面以及覆盖欧姆接触层的反射电极层和未被欧姆接触层覆盖的p型化合物半导体层的上表面的一部分，其中，在p型化合物半导体层的上表面配置与反射电极层和p型化合物半导体层直接接触的接触面。

40. 发明授权

US06790693B2 Method for fabricating a laser diode using a reflective layer including an air layer 失效
标题翻译：使用包括空气层的反射层制造激光二极管的方法
公开(公告)号：US06790693B2
公开(公告)日：2004-09-14
申请号：US10420704
申请日：2003-04-23
申请人： Kwang-ki Choi , Jae-hee Cho
发明人： Kwang-ki Choi , Jae-hee Cho
IPC分类号： H01L2100
CPC分类号： H01S5/028 , H01L33/46 , H01S5/0287 , H01S5/125
摘要： A laser diode that uses air as a reflective layer, thereby enhancing reflectance with respect to an oscillating laser beam, and a method for fabricating such a laser diode are provided. The laser diode includes a substrate, a laser oscillating layer formed on the substrate, an upper electrode formed on the laser oscillating layer, and a reflective layer formed at one side of the laser oscillating layer, wherein the reflective layer comprises air layers. According to the laser diode and the method for fabricating the same, it is possible to form a reflective layer having a higher reflectivity with a reduced number of pairs of reflective layers, thereby making a laser diode whose threshold voltage is reduced and which can produce a high-output laser beam.
摘要翻译：提供使用空气作为反射层的激光二极管，从而提高相对于振荡激光束的反射率，以及制造这种激光二极管的方法。激光二极管包括基板，形成在基板上的激光振荡层，形成在激光振荡层上的上电极和形成在激光振荡层一侧的反射层，其中反射层包括空气层。根据激光二极管及其制造方法，可以形成具有较低反射率的反射层，反射层数减少的反射层，从而形成阈值电压降低的激光二极管，并可产生高输出激光束。

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