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    • 34. 发明授权
    • Light shutter device
    • 光闸装置
    • US06661555B2
    • 2003-12-09
    • US10166393
    • 2002-06-11
    • Tomohiko MasudaKen MatsubaraIsao DoiYasuyuki Hiromoto
    • Tomohiko MasudaKen MatsubaraIsao DoiYasuyuki Hiromoto
    • G02F107
    • G02F1/0316G02F1/0322G02F1/0551
    • A light shutter device including a group of light shutter elements 31a, 31b 31c and 31d formed on a light shutter chip 30 made of PLZT has a construction in which an electrode gap is set wider in a element in which an electric field acts more strongly to equalize half wavelength voltages of elements almost to the same level since electric fields acting on the elements are different in strength from each other even under a prescribed voltage applied between a common electrode 32 and each of individual electrodes 33. An electrode gap of an element 31c having a weaker electric field is comparatively set narrower, whereas an electrode gap of an element 31d having a stronger electric field is set comparatively wider. Moreover, a shape of electrodes of each element are altered so as to make half wavelength voltages of elements almost equal.
    • 包括形成在由PLZT制成的光快门芯片30上的一组光快门元件31a,31b 31c和31d的光快门装置具有这样的结构,其中,电场间隙在电场作用更强烈的元件中被设定得更宽, 即使在施加在公共电极32和各个电极33之间的规定电压下,作用在元件上的电场的强度彼此不同,元件的半波长电压几乎达到同一水平。均匀元件31c的电极间隙 具有较弱电场的电场相对较窄,而具有较强电场的元件31d的电极间隙设定得比较宽。 此外,改变每个元件的电极形状,使得元件的半波长电压几乎相等。
    • 37. 发明授权
    • Electrostatic recording apparatus having a floating electrode on a
photoelectric transfer member
    • 在光电转移元件上具有浮置电极的静电记录装置
    • US5862443A
    • 1999-01-19
    • US856604
    • 1997-05-15
    • Akihito IkegawaIsao DoiKeiko Momotani
    • Akihito IkegawaIsao DoiKeiko Momotani
    • B41J2/41G03G15/05G03G15/18
    • G03G15/05B41J2/41
    • An electrostatic recording apparatus 1 for forming an electrostatic image on an electric charge carrying member 2 comprises a photoelectric transfer member 14 spaced from the electric charge carrying member 2, a floating electrode 16 provided on a first surface of the photoelectric transfer member 14, an electric power supply 27 for applying a voltage between the second surface of the photoelectric transfer member 14 and the second surface of the electric charge carrying member 2, and an exposure device 8 for exposing a second surface of the photoelectric transfer member 14. The floating electrode 16 having an electric discharge terminal 18a close to the electric charge carrying member 2. When the exposure device 8 exposes a second surface of the photoelectric transfer member 14, the carriers generated in the photoelectric transfer member 14 move toward the floating electrode 16 to cause an electric discharge between the electric discharge terminal 18a of the floating electrode 16 and the electric charge carrying member 2, which allows an electrostatic image to be formed on the electric charge carrying member 2.
    • 用于在电荷承载构件2上形成静电图像的静电记录装置1包括与电荷承载构件2间隔开的光电转移构件14,设置在光电转移构件14的第一表面上的浮动电极16, 用于在光电转移构件14的第二表面和电荷承载构件2的第二表面之间施加电压的电源27以及用于暴露光电转移构件14的第二表面的曝光装置8.浮动电极16 具有靠近电荷承载构件2的放电端子18a。当曝光装置8暴露光电转移构件14的第二表面时,在光电转移构件14中产生的载流子朝向浮动电极16移动以产生电 浮置电极16的放电端子18a之间的放电 电荷承载构件2,其允许在电荷承载构件2上形成静电图像。
    • 38. 发明授权
    • Electrophotographic image forming apparatus with low ozone generation
    • 具有低臭氧发生的电子照相图像形成装置
    • US5790925A
    • 1998-08-04
    • US803465
    • 1997-02-20
    • Isao DoiKeiko MomotaniAkihito Ikegawa
    • Isao DoiKeiko MomotaniAkihito Ikegawa
    • B41J2/39G03G15/05G03G21/00
    • G03G15/05B41J2/39
    • An image forming apparatus of the present invention comprises an image carrying member 2, a photosensitive member 9, a first voltage applying means 13, and an exposure means 5. The image carrying member 2 has an insulating layer 25 formed on a first conductive layer 23. The photosensitive member 9 has a photosensitive layer 93 formed on a second conductive layer 92. The photosensitive member 9 is supported so that the photosensitive layer 93 is opposed to the insulating layer 25 of the image carrying member 2. The first voltage applying means 13 applies a voltage between the first conductive layer 25 and the second conductive layer 92. A pattern-like surface electrode layer 98 is formed on the surface of the photosensitive layer 93 opposed to the image carrying member 2. A second voltage applying means 14 applies a bias voltage to the surface electrode layer 98. The exposure means exposes the photosensitive member 9 to discharge between the pattern-like surface electrode layer 98 and the image carrying member 2, thereby, an electrostatic latent image is formed on the surface of the image carrying member 2.
    • 本发明的图像形成装置包括图像承载构件2,感光构件9,第一电压施加装置13和曝光装置5.图像承载构件2具有形成在第一导电层23上的绝缘层25 光敏元件9具有形成在第二导电层92上的光敏层93.感光元件9被支撑为使得感光层93与图像承载元件2的绝缘层25相对。第一电压施加元件13 在第一导电层25和第二导电层92之间施加电压。在与图像承载构件2相对的感光层93的表面上形成图案状的表面电极层98.第二电压施加装置14将 偏置电压到表面电极层98.曝光装置使感光构件9暴露在图案状表面电极层98和t 他的图像承载构件2,从而在图像承载构件2的表面上形成静电潜像。
    • 40. 发明授权
    • Method of manufacturing a nozzle plate for a liquid ejection head
    • 制造喷液头喷嘴板的方法
    • US08881399B2
    • 2014-11-11
    • US12310380
    • 2007-08-17
    • Atsuro YanataIsao Doi
    • Atsuro YanataIsao Doi
    • B41J2/16B41J2/14
    • B41J2/162B41J2/1433B41J2/161B41J2/1623B41J2/1628B41J2/1631B41J2/1632B41J2/1642B41J2/1645B41J2/1646B41J2202/11Y10T29/49401
    • A manufacturing method of nozzle plate for liquid ejection head includes, providing a substrate having a first base material of Si and a second base material, of which the etching rate in Si anisotropic dry etching is lower then that of Si, provided on one side of the first base material, forming a film as a second etching mask on the surface of the second base material, forming a second etching mask pattern having a small-diameter opening shape in the second etching mask film, etching until the etching part is extended through the second base material, forming a film as a first etching mask film on the surface of the first base material, forming a first etching mask pattern having a large-diameter opening shape in the first etching mask film, and Si anisotropic dry etching until the etched part is extended through the first base material.
    • 一种液体喷射头用喷嘴板的制造方法,其特征在于,提供具有Si的第一基材和第二基材的基板,其中Si各向异性干蚀刻中的蚀刻速度低于Si的蚀刻速率, 第一基材,在第二基材的表面上形成作为第二蚀刻掩模的膜,在第二蚀刻掩模膜中形成具有小直径开口形状的第二蚀刻掩模图案,直到蚀刻部分延伸通过 第二基材,在第一基材的表面上形成作为第一蚀刻掩模膜的膜,在第一蚀刻掩模膜中形成具有大直径开口形状的第一蚀刻掩模图案,以及Si各向异性干蚀刻,直到 蚀刻部分延伸通过第一基材。