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31. 发明授权

US08841777B2 Bonded structure employing metal semiconductor alloy bonding 有权
标题翻译：使用金属半导体合金结合的结合结构
公开(公告)号：US08841777B2
公开(公告)日：2014-09-23
申请号：US12685954
申请日：2010-01-12
申请人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
发明人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L21/48 , H01L21/52 , H01L21/40 , H01L21/20 , H01L27/06 , H01L21/768
CPC分类号： H01L21/76841 , H01L21/2007 , H01L27/0688 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896
摘要： Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
摘要翻译：形成在第一基板上的金属部分和半导体部分的垂直叠层与形成在第二基板上的金属部分和半导体部分的垂直叠层物理接触。或者，形成在第一基板上的金属部分和半导体部分的垂直堆叠与形成在第二基板上的金属部分物理接触。在引起由半导体部分和金属部分衍生的金属半导体合金的形成的温度下对第一和第二基板的组装进行退火。第一基板和第二基板通过粘附到第一和第二基板的金属半导体合金部分接合。

32. 发明授权

US08829587B2 Flash memory device and manufacturing method of the same 有权
标题翻译：闪存器件及其制造方法相同
公开(公告)号：US08829587B2
公开(公告)日：2014-09-09
申请号：US13003585
申请日：2010-09-19
申请人： Huilong Zhu
发明人： Huilong Zhu
IPC分类号： H01L29/768 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/788
CPC分类号： H01L21/28273 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A flash memory device includes a semiconductor substrate, a gate stack formed on the semiconductor substrate; a channel region below the gate stack; spacers outside the gate stack; and source/drain regions outside the channel region and in the semiconductor substrate, in which the gate stack includes a first gate dielectric layer on the channel region; a first conductive layer covering an upper surface of the first gate dielectric layer and inner walls of the spacers; a second gate dielectric layer covering a surface of the first conductive layer; and a second conductive layer covering a surface of the second gate dielectric layer. A method for manufacturing a flash memory device disclosed herein.
摘要翻译：闪存器件包括半导体衬底，形成在半导体衬底上的栅叠层; 栅堆叠下方的沟道区; 栅极叠层之外的间隔物; 以及沟道区域和半导体衬底之外的源极/漏极区域，其中栅极堆叠层包括沟道区域上的第一栅极介电层; 覆盖所述第一栅极电介质层的上表面和所述间隔物的内壁的第一导电层; 覆盖所述第一导电层的表面的第二栅极介电层; 以及覆盖所述第二栅极介电层的表面的第二导电层。本文公开的闪存器件的制造方法。

33. 发明授权

US08815698B2 Well region formation method and semiconductor base 有权
标题翻译：井区形成方法和半导体基础
公开(公告)号：US08815698B2
公开(公告)日：2014-08-26
申请号：US13381636
申请日：2011-07-26
申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L27/04 , H01L21/76 , H01L21/8238 , H01L29/16 , H01L21/8234 , H01L29/66
CPC分类号： H01L21/823481 , H01L21/823493 , H01L21/823878 , H01L21/823892 , H01L29/1608 , H01L29/161 , H01L29/66651
摘要： A well region formation method and a semiconductor base in the field of semiconductor technology are provided. A method comprises: forming isolation regions in a semiconductor substrate to isolate active regions; selecting at least one of the active regions, and forming a first well region in the selected active region; forming a mask to cover the selected active region, and etching the rest of the active regions, so as to form grooves; and growing a semiconductor material by epitaxy to fill the grooves. Another method comprises: forming isolation regions in a semiconductor substrate for isolating active regions; forming well regions in the active regions; etching the active regions to form grooves, such that the grooves have a depth less than or equal to a depth of the well regions; and growing a semiconductor material by epitaxy to fill the grooves.
摘要翻译：提供了半导体技术领域中的阱区形成方法和半导体基底。一种方法包括：在半导体衬底中形成隔离区以隔离有源区; 选择所述有源区域中的至少一个，以及在所选择的有源区域中形成第一阱区域; 形成掩模以覆盖所选择的有源区，并蚀刻其余的有源区，以便形成沟槽; 并通过外延生长半导体材料以填充凹槽。另一种方法包括：在半导体衬底中形成用于隔离有源区的隔离区; 在活跃区域形成井区; 蚀刻有源区以形成凹槽，使得凹槽具有小于或等于阱区深度的深度; 并通过外延生长半导体材料以填充凹槽。

34. 发明申请

US20140197410A1 Semiconductor Structure and Method for Manufacturing the Same 审中-公开
标题翻译：半导体结构及其制造方法
公开(公告)号：US20140197410A1
公开(公告)日：2014-07-17
申请号：US13697096
申请日：2012-05-17
申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/04
CPC分类号： H01L29/78 , H01L21/76283 , H01L29/04 , H01L29/66477 , H01L29/66772 , H01L29/7843 , H01L29/7848 , H01L29/78603 , H01L29/78618 , H01L29/78696
摘要： The present invention provides a method for manufacturing a semiconductor structure. The method comprises: providing an SOI substrate and forming a gate structure on said SOI substrate; etching a SOI layer and a BOX layer of the SOI substrate on both sides of the gate structure to form a trench exposing the BOX layer, said trench partially entering into the BOX layer; forming a stressed layer that fills up a part of said trench; forming a semiconductor layer covering the stressed layer in the trench. Correspondingly, the present invention also provides a semiconductor structure formed by the above method. In the semiconductor structure and the method for manufacturing the same according to the present invention, a trench is formed on an ultrathin SOI substrate, first filled with a stressed layer, and then filled with a semiconductor material to be ready for forming a source/drain region. The stressed layer provides a favorable stress to the channel of the semiconductor device, thus facilitating improving the performance of the semiconductor device.
摘要翻译：本发明提供一种半导体结构的制造方法。该方法包括：提供SOI衬底并在所述SOI衬底上形成栅极结构; 在栅极结构的两侧蚀刻SOI衬底的SOI层和BOX层，以形成露出BOX层的沟槽，所述沟槽部分地进入BOX层; 形成填充所述沟槽的一部分的应力层; 形成覆盖沟槽中的应力层的半导体层。相应地，本发明还提供了通过上述方法形成的半导体结构。在根据本发明的半导体结构及其制造方法中，在超薄SOI衬底上形成沟槽，首先填充有应力层，然后填充半导体材料以准备形成源极/漏极地区。应力层对半导体器件的通道提供有利的应力，从而有助于提高半导体器件的性能。

35. 发明申请

US20140154853A1 METHOD FOR MANUFACTURING N-TYPE MOSFET 有权
标题翻译：制造N型MOSFET的方法
公开(公告)号：US20140154853A1
公开(公告)日：2014-06-05
申请号：US13878046
申请日：2012-12-07
申请人： Qiuxia Xu , Huilong Zhu , Huajie Zhou , Gaobo Xu
发明人： Qiuxia Xu , Huilong Zhu , Huajie Zhou , Gaobo Xu
IPC分类号： H01L29/66
CPC分类号： H01L21/28176 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： The present disclosure discloses a method for manufacturing an N-type MOSFET, comprising: forming a part of the MOSFET on a semiconductor substrate, the part of the MOSFET comprising source/drain regions in the semiconductor substrate, a replacement gate stack between the source/drain regions above the semiconductor substrate, and a gate spacer surrounding the replacement gate stack; removing the replacement gate stack of the MOSFET to form a gate opening exposing a surface of the semiconductor substrate; forming an interface oxide layer on the exposed surface of the semiconductor; forming a high-K gate dielectric layer on the interface oxide layer in the gate opening; forming a first metal gate layer on the high-K gate dielectric layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high-K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.
摘要翻译：本公开公开了一种用于制造N型MOSFET的方法，包括：在半导体衬底上形成MOSFET的一部分，所述MOSFET的部分包括半导体衬底中的源极/漏极区，源/ 在半导体衬底之上的漏极区域和围绕替换栅极堆叠的栅极间隔; 去除MOSFET的替换栅极堆叠以形成暴露半导体衬底的表面的栅极开口; 在所述半导体的暴露表面上形成界面氧化物层; 在栅极开口中的界面氧化物层上形成高K栅极电介质层; 在高K栅极电介质层上形成第一金属栅极层; 将掺杂剂离子注入到第一金属栅极层中; 并且进行退火以使掺杂剂离子在高K栅极介电层和第一金属栅极层之间的上部界面以及高K栅极介电层和界面氧化物层之间的下部界面处扩散和积聚，并且还通过界面反应在高K栅极介电层和界面氧化物层之间的下界面产生电偶极子。

36. 发明授权

US08729661B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08729661B2
公开(公告)日：2014-05-20
申请号：US13379533
申请日：2011-04-25
申请人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
发明人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
IPC分类号： H01L21/70
CPC分类号： H01L21/02647 , H01L21/02639 , H01L21/76229
摘要： A semiconductor structure and a method for manufacturing the same are disclosed. The method comprises: disposing a first dielectric material layer on a first semiconductor layer and defining openings in the first dielectric material layer; epitaxially growing a second semiconductor layer on the first semiconductor layer via the openings defined in the first dielectric material layer, wherein the second semiconductor layer and the first semiconductor layer comprise different materials from each other; and forming plugs of a second dielectric material in the second semiconductor layer at positions where the openings are defined in the first dielectric material layer and also at middle positions between adjacent openings. According to embodiments of the disclosure, defects occurring during the heteroepitaxial growth can be effectively suppressed.
摘要翻译：公开了一种半导体结构及其制造方法。该方法包括：在第一半导体层上设置第一介电材料层并在第一介电材料层中限定开口; 通过限定在第一介电材料层中的开口在第一半导体层上外延生长第二半导体层，其中第二半导体层和第一半导体层包括彼此不同的材料; 以及在所述第二半导体层中形成所述第一介电材料层中所述开口的位置以及在相邻开口之间的中间位置处形成第二电介质材料的插塞。根据本公开的实施例，可以有效地抑制在异质外延生长期间发生的缺陷。

37. 发明授权

US08729638B2 Method for making FINFETs and semiconductor structures formed therefrom 有权
标题翻译：制造FINFET和由其形成的半导体结构的方法
公开(公告)号：US08729638B2
公开(公告)日：2014-05-20
申请号：US13696071
申请日：2011-11-30
申请人： Huilong Zhu , Zhijiong Luo , Haizhou Yin
发明人： Huilong Zhu , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7856 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： A method for making FinFETs and semiconductor structures formed therefrom is disclosed, comprising: providing a SiGe layer on a Si semiconductor substrate and a Si layer on the SiGe layer, wherein the lattice constant of the SiGe layer matches that of the substrate; patterning the Si layer and the SiGe layer to form a Fin structure; forming a gate stack on top and both sides of the Fin structure and a spacer surrounding the gate stack; removing a portion of the Si layer which is outside the spacer with the spacer as a mask, while keeping a portion of the Si layer which is inside the spacer; removing a portion of the SiGe layer which is kept after the patterning, to form a void; forming an insulator in the void; and epitaxially growing stressed source and drain regions on both sides of the Fin structure and the insulator.
摘要翻译：公开了一种用于制造FinFET和由其形成的半导体结构的方法，包括：在Si半导体衬底上提供SiGe层和SiGe层上的Si层，其中SiGe层的晶格常数与衬底的晶格常数相匹配; 图案化Si层和SiGe层以形成Fin结构; 在Fin结构的顶部和两侧上形成栅极堆叠以及围绕栅极堆叠的间隔物; 在间隔物作为掩模的同时，除去间隔物外部的Si层的一部分，同时保持间隔物内部的Si层的一部分; 去除在图案化之后保留的SiGe层的一部分，以形成空隙; 在空隙中形成绝缘体; 并在鳍结构和绝缘体的两侧外延生长应力源极和漏极区。

38. 发明授权

US08723021B2 Efficiency in antireflective coating layers for solar cells 有权
标题翻译：太阳能电池抗反射涂层的效率
公开(公告)号：US08723021B2
公开(公告)日：2014-05-13
申请号：US13416354
申请日：2012-03-09
申请人： Harold J. Hovel , Rainer K. Krause , Zhengwen Li , Huilong Zhu
发明人： Harold J. Hovel , Rainer K. Krause , Zhengwen Li , Huilong Zhu
IPC分类号： H01L31/032
CPC分类号： G02B1/113 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a substrate having an N-region and a P-region, a first anti-reflective layer disposed on the substrate, a metallic contact disposed on the first anti-reflective layer, a second anti-reflective layer disposed on the first anti-reflective layer and the metallic contact, and a region partially defined by the first anti-reflective layer and the second anti-reflective layer having diffused metallic contact material operative to form a conductive path to the substrate through the first anti-reflective layer, the metallic contact, and the second anti-reflective layer.
摘要翻译：太阳能电池包括具有N区和P区的衬底，设置在衬底上的第一抗反射层，设置在第一抗反射层上的金属触点，设置在第一抗反射层上的第二抗反射层抗反射层和金属接触，以及由第一抗反射层和第二抗反射层局部限定的区域，其具有扩散的金属接触材料，其可操作以通过第一抗反射层形成到衬底的导电路径，金属触点和第二抗反射层。

39. 发明授权

US08710556B2 Semiconductor device comprising a Fin and method for manufacturing the same 有权
标题翻译：包括Fin的半导体器件及其制造方法
公开(公告)号：US08710556B2
公开(公告)日：2014-04-29
申请号：US12937652
申请日：2010-06-25
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qiagqing Liang
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qiagqing Liang
IPC分类号： H01L29/76 , H01L27/12 , H01L21/336
CPC分类号： H01L29/66636 , H01L29/66795 , H01L29/66803 , H01L29/7848 , H01L29/785
摘要： The present application discloses a semiconductor device comprising a fin of semiconductive material formed from a semiconductor layer over a semiconductor substrate and having two opposing sides perpendicular to the main surface of the semiconductor substrate; a source region and a drain region provided in the semiconductor substrate adjacent to two ends of the fin and being bridged by the fin; a channel region provided at the central portion of the fin; and a stack of gate dielectric and gate conductor provided at one side of the fin, where the gate conductor is isolated from the channel region by the gate dielectric, and wherein the stack of gate dielectric and gate conductor extends away from the one side of the fin in a direction parallel to the main surface of the semiconductor substrate, and insulated from the semiconductor substrate by an insulating layer. The semiconductor device has an improved short channel effect and a reduced parasitic capacitance and resistance, which contributes to an improved electrical property and facilitates scaling down of the transistor.
摘要翻译：本申请公开了一种半导体器件，其包括由半导体衬底上的半导体层形成并具有垂直于半导体衬底的主表面的两个相对侧的半导体材料的鳍; 源极区域和漏极区域，设置在所述半导体衬底中，邻近所述鳍片的两端并被所述鳍片桥接; 设置在所述翅片的中央部的通道区域; 以及设置在鳍的一侧的栅极电介质和栅极导体的堆叠，其中栅极导体通过栅极电介质与沟道区隔离，并且其中栅极电介质和栅极导体的堆叠远离翅片在平行于半导体衬底的主表面的方向上，并且通过绝缘层与半导体衬底绝缘。半导体器件具有改善的短沟道效应和减小的寄生电容和电阻，这有助于改善电性能并且有助于晶体管的缩小。

40. 发明授权

US08658507B2 MOSFET structure and method of fabricating the same using replacement channel layer 有权
标题翻译： MOSFET结构及其制造方法采用替代沟道层
公开(公告)号：US08658507B2
公开(公告)日：2014-02-25
申请号：US12990714
申请日：2010-06-24
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qingqing Liang
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qingqing Liang
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L29/1054 , H01L29/66583 , H01L29/66636 , H01L29/66651 , H01L29/7834 , H01L29/7848
摘要： There is provided a MOSFET structure and a method of fabricating the same. The method includes: providing a semiconductor substrate; forming a dummy gate on the semiconductor substrate; forming source/drain regions; selectively etching the dummy gate to a position where a channel is to be formed; and epitaxially growing a channel layer at the position where the channel is to be formed and forming a gate on the channel layer, wherein the channel layer comprises a material of high mobility. Thereby, the channel of the device is replaced with the material of high mobility after the source/drain region is formed, and thus it is possible to suppress the short channel effect and also to improve the device performance.
摘要翻译：提供了一种MOSFET结构及其制造方法。该方法包括：提供半导体衬底; 在半导体衬底上形成虚拟栅极; 形成源/漏区; 选择性地将伪栅极蚀刻到要形成沟道的位置; 并且在通道的位置上外延生长沟道层，并在沟道层上形成栅极，其中沟道层包括高迁移率的材料。因此，在形成源极/漏极区域之后，器件的沟道被高迁移率的材料代替，从而可以抑制短沟道效应并且还能够提高器件性能。

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