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31. 发明授权

US08665243B2 Sensor device, method of driving sensor element, display device with input function and electronic unit 有权
标题翻译：传感器装置，驱动传感器元件的方法，具有输入功能的显示装置和电子单元
公开(公告)号：US08665243B2
公开(公告)日：2014-03-04
申请号：US12947038
申请日：2010-11-16
申请人： Michiru Senda , Makoto Takatoku
发明人： Michiru Senda , Makoto Takatoku
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/0416 , G06F3/0418 , G06F3/042 , G06F3/04883 , G06F2203/04808
摘要： A sensor device includes sensor elements arranged in a matrix form, and a sensor driving section driving the sensor elements. Each of the sensor elements includes a photoelectric conversion element generating electric charge, a storage node storing electric charge, to show a voltage which fluctuates according to the stored electric charge, a reset transistor resetting the voltage in the storage node and a readout section reading the voltage value resulted from the stored electric charge in the storage node, to output the resultant voltage value. The sensor driving section controls the reset transistor so that the storage nodes of the sensor elements over sensor element lines are reset into the predetermined reset voltage at a time, and then performs read control after a lapse of a predetermined exposure period to allow the sensor detection signals to be sequentially outputted from the respective sensor elements arranged in each sensor element lines.
摘要翻译：传感器装置包括以矩阵形式布置的传感器元件和驱动传感器元件的传感器驱动部。每个传感器元件包括产生电荷的光电转换元件，存储电荷的存储节点，以显示根据存储的电荷而波动的电压，复位晶体管复位存储节点中的电压，读出部分电压值由存储节点中存储的电荷产生，以输出合成的电压值。传感器驱动部分控制复位晶体管，使得传感器元件线上的传感器元件的存储节点一次被复位到预定的复位电压中，然后在经过预定的曝光周期之后执行读取控制，以允许传感器检测从布置在每个传感器元件线中的各个传感器元件顺序地输出信号。

32. 发明申请

US20120299070A1 PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER 有权
标题翻译：光电转换元件和光电转换器
公开(公告)号：US20120299070A1
公开(公告)日：2012-11-29
申请号：US13474061
申请日：2012-05-17
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
IPC分类号： H01L31/0232 , H01L27/144 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14663 , H01L31/02164
摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
摘要翻译：本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

33. 发明申请

US20120038018A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US20120038018A1
公开(公告)日：2012-02-16
申请号：US13196096
申请日：2011-08-02
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/0352 , H01L27/14607 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.
摘要翻译：光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。第三半导体层具有与第一半导体层不接触的至少一个角部。

34. 发明授权

US08115188B2 Memory element and display device 有权
标题翻译：存储元件和显示设备
公开(公告)号：US08115188B2
公开(公告)日：2012-02-14
申请号：US12320307
申请日：2009-01-23
申请人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
发明人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： H01L27/12 , G02F1/1362 , G09G3/3648 , G09G2300/088 , G09G2330/021 , H01L27/1214 , H01L27/24
摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.
摘要翻译：这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少一个氧化物膜层设置在一个导电层和另一个导电层之间。

35. 发明申请

US20110204246A1 RADIATION IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME 有权
标题翻译：辐射图像拾取装置及其驱动方法
公开(公告)号：US20110204246A1
公开(公告)日：2011-08-25
申请号：US13027328
申请日：2011-02-15
申请人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
发明人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
IPC分类号： G01T1/24 , H01L29/04 , H01L27/146
CPC分类号： H01L27/14676 , G01T1/2018 , H04N5/2251 , H04N5/374 , H04N5/378
摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
摘要翻译：允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动通过像素晶体管，从而恢复像素晶体管的特性。

36. 发明授权

US06555423B2 Method of manufacturing a thin film transistor and a method of evaluating a polysilicon film 有权
标题翻译：薄膜晶体管的制造方法及多晶硅膜的评价方法
公开(公告)号：US06555423B2
公开(公告)日：2003-04-29
申请号：US09912713
申请日：2001-07-25
申请人： Hiroyuki Wada , Makoto Takatoku
发明人： Hiroyuki Wada , Makoto Takatoku
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , B23K26/032 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L22/26 , H01L29/66765 , H01L29/78678 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： In manufacturing a thin-film transistor the condition of a polysilicon film is evaluated, a manufacture margin for the film is determined from the condition evaluated, and the power of an excimer laser annealing apparatus is set based on the manufacture margin. The annealing apparatus anneals an amorphous silicon film, converting the same to a polysilicon film. The surface spatial structure of the polysilicon film thus formed exhibits linearity or periodicity, or both, depending on the energy applied to the amorphous silicon film during the annealing. The image data of the polysilicon film is processed, thereby determining the linearity and/or periodicity in numerical values, by utilizing the auto-correlation function of the surface image of the polysilicon film. A difference between the auto-correlation function of the surface image of parts of the polysilicon film, which are a source region and a drain region, and the auto-correlation function of the part of the polysilicon film, which lies above a gate electrode, is obtained, and the manufacture margin of the polysilicon film is calculated from this difference.
摘要翻译：在制造薄膜晶体管时，评估多晶硅膜的状态，根据评估条件确定膜的制造裕度，并且基于制造裕度设定准分子激光退火装置的功率。退火设备使非晶硅膜退火，将其转化为多晶硅膜。由此形成的多晶硅膜的表面空间结构根据在退火过程中施加到非晶硅膜的能量而呈现线性或周期性，或者两者。处理多晶硅膜的图像数据，通过利用多晶硅膜的表面图像的自相关函数来确定数值的线性和/或周期性。作为源极区域和漏极区域的多晶硅膜的部分的表面图像的自相关函数与位于栅电极上方的多晶硅膜部分的自相关函数之间的差异，，并根据该差异计算多晶硅膜的制造裕度。

37. 发明授权

US5708485A Active matrix display device 失效
标题翻译：主动矩阵显示装置
公开(公告)号：US5708485A
公开(公告)日：1998-01-13
申请号：US617299
申请日：1996-03-18
申请人： Takusei Sato , Yoshihiro Hashimoto , Kazuyoshi Yoshida , Shingo Makimura , Makoto Takatoku
发明人： Takusei Sato , Yoshihiro Hashimoto , Kazuyoshi Yoshida , Shingo Makimura , Makoto Takatoku
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786 , G02F1/1343 , G02F1/1333
CPC分类号： G02F1/136209
摘要： To give an electric shield function and an electric contact function to a light shielding film formed on a drive substrate. An active matrix display device includes a drive substrate 1 having pixels 4, an opposed substrate 2 having an opposed electrode 5, and a liquid crystal 3 held in a space defined between the drive substrate 1 and the opposed substrate 2. An upper layer portion of the drive substrate 1 includes pixel electrodes 6 formed individually for the pixels 4. A lower layer portion of the drive substrate 1 includes thin-film transistors 7 for individually driving the pixel electrodes 6, scanning lines 8, and signal lines 9. A light shielding film having conductivity is interposed between the upper layer portion and the lower layer portion, and is divided into mask shielding films 16M and pad shielding films 16P. Each mask shielding film 16M is continuously patterned along each row of the pixels 4 to partially shield at least the corresponding thin-film transistor 7. Each mask shielding film 16M is insulated from both the upper layer portion and the lower layer portion, and is maintained at a fixed potential. The pad shielding films 16P are discretely patterned for the individual pixels 4, and each pad shielding film 16P is located at a contact portion C between the corresponding pixel electrode 6 and the corresponding thin-film transistor 7 to provide electrical connection therebetween and light shielding.
摘要翻译：为了对形成在驱动基板上的遮光膜赋予电屏蔽功能和电接触功能。有源矩阵显示装置包括具有像素4的驱动基板1，具有相对电极5的相对基板2和保持在驱动基板1和相对基板2之间的空间中的液晶3。驱动基板1包括为像素4分别形成的像素电极6.驱动基板1的下层部分包括用于单独驱动像素电极6，扫描线8和信号线9的薄膜晶体管7.遮光具有导电性的膜插入在上层部分和下层部分之间，并被分成掩模屏蔽膜16M和焊盘屏蔽膜16P。每个掩模屏蔽膜16M沿着像素4的每一行连续地图案化，以至少部分地屏蔽相应的薄膜晶体管7.每个掩模屏蔽膜16M与上层部分和下层部分都被绝缘，并被保持处于固定的潜力。衬垫屏蔽膜16P对于各个像素4离散地图案化，并且每个衬垫屏蔽膜16P位于相应的像素电极6和相应的薄膜晶体管7之间的接触部分C处，以提供其间的电连接和遮光。

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