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    • 31. 发明授权
    • Portal site for serving data monitored and observed and method of using data monitored and observed
    • 用于监测和观察服务数据的门户网站以及使用监视和观察数据的方法
    • US07222103B2
    • 2007-05-22
    • US10368382
    • 2003-02-20
    • Yasuo SatoChihiro FukuiHideaki Suzuki
    • Yasuo SatoChihiro FukuiHideaki Suzuki
    • G06Q90/00
    • G06Q30/02G06Q20/382H04L29/06H04L67/12H04L67/22H04L67/306H04L69/329
    • A portal site for serving data monitored and observed, which can not only act for monitoring and observing services, instead of a facility owner, but also process the data into economically valuable data with the use of the result of monitoring and observation, is connected to a computer network so as to gather sequential data which is observed in time series by a not less than one sensor as to an operation running condition of a facility belonging the facility owner, and event data monitored invariantly, and incorporates a function of obtaining a data disclosure profile for designating a degree of disclosure of the data, from the facility owner, and a function of onerously serving an item of secondary data obtained by processing the data in a range satisfying the data disclosure profile, to a data user different from the facility owner.
    • 用于服务数据监控和观察的门户网站,不仅可以用于监视和观察服务,而不是设施所有者,而且还可以使用监视和观察结果将数据处理成经济有价值的数据,与 计算机网络,以收集不少于一个传感器对属于设备所有者的设施的操作运行状况及时监视的顺序数据,并且不断地监视事件数据,并且包括获取数据的功能 用于从设施所有者指定数据的公开程度的公开简档,以及通过在满足数据公开简档的范围内处理数据而获得的辅助数据的项目的功能,向不同于设施的数据用户 所有者。
    • 33. 发明授权
    • Serotonin 5-HT3 receptor partial activator
    • 5-羟色胺5-HT3受体部分激活剂
    • US06333328B1
    • 2001-12-25
    • US09686759
    • 2000-10-12
    • Yasuo SatoMegumi YamadaKazuko KobayashiKatsuyoshi IwamatsuFukio KonnoKoichi Shudo
    • Yasuo SatoMegumi YamadaKazuko KobayashiKatsuyoshi IwamatsuFukio KonnoKoichi Shudo
    • A61K31495
    • C07D263/58A61K31/496C07D263/30C07D413/04
    • This invention provides a serotonin 5-HT3 receptor partial activator which has a serotonin 5-HT3 receptor activating action, in addition to its serotonin 5-HT3 receptor antagonism, and does not cause constipation as a side effect. Particularly, based on the finding that newly synthesized benzoxazole derivatives typified by the compounds of the following formula (2) have strong serotonin 5-HT3 receptor antagonism and serotonin 5-HT3 receptor activating action, this invention provides these benzoxazole derivatives as serotonin 5-HT3 receptor partial activators. In the above formula, R1 to R4 may be the same or different from one another and each represents a hydrogen atom, a halogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted lower alkenyl group or a substituted or unsubstituted amino group, or two groups of R1 and R2 may be linked together to form a ring structure, namely benzene ring; R5 represents a hydrogen atom, a substituted or unsubstituted lower alkyl group or a substituted or unsubstituted lower alkenyl group; and m is an integer of 1 to 4.
    • 本发明提供除5-羟色胺5-HT 3受体拮抗作用之外还具有5-羟色胺5-HT 3受体激活作用的5-羟色胺5-HT 3受体部分活化剂,并且不引起便秘作为副作用。特别地,基于以下发现: 以下式(2)化合物为代表的新合成苯并恶唑衍生物具有强烈的5-羟色胺5-HT 3受体拮抗作用和5-羟色胺5-HT 3受体激活作用,本发明提供了这些苯并恶唑衍生物作为5-羟色胺5-HT 3受体部分激活因子。 式中,R 1〜R 4可以相同或不同,表示氢原子,卤素原子,取代或未取代的低级烷基,取代或未取代的低级烯基或取代或未取代的氨基,或二 R1和R2的基团可以连接在一起形成环结构,即苯环; R5表示氢原子,取代或未取代的低级烷基或取代或未取代的低级烯基; m为1〜4的整数。
    • 37. 发明授权
    • Nonvolatile semiconductor storage device and method of manufacturing
    • 非易失性半导体存储装置及其制造方法
    • US5793081A
    • 1998-08-11
    • US850449
    • 1997-05-05
    • Yugo TomiokaYasuo Sato
    • Yugo TomiokaYasuo Sato
    • H01L21/8247H01L27/115H01L29/76H01L29/788
    • H01L27/11519H01L27/115H01L27/11521H01L27/11524
    • A nonvolatile semiconductor storage device in which a composite gate of a floating gate memory cell transistor and a gate electrode of a peripheral MOS transistor are formed in the same lithography process and a manufacturing method thereof. A polycrystalline silicon film and an ONO film are formed on a well region through a gate oxide film and a tunnel oxide film. A polycrystalline silicon film is formed after removing the ONO film in the right region. A floating gate and a control gate of the memory cell transistor and a gate electrode of the select transistor are formed with photoresist as a mask. Thereafter, ions of impurities are implanted and diffused in a transverse direction, thereby to form an impurity diffused layer. With this, since the impurity diffused layer is formed by transverse diffusion of impurities after the tunnel oxide film is formed, it is possible to prevent deterioration of the film quality of the tunnel oxide film.
    • 一种非易失性半导体存储器件,其中在相同的光刻工艺中形成浮栅存储单元晶体管的复合栅极和外围MOS晶体管的栅电极及其制造方法。 通过栅极氧化膜和隧道氧化物膜在阱区上形成多晶硅膜和ONO膜。 在去除右区域中的ONO膜之后形成多晶硅膜。 存储单元晶体管的浮栅和控制栅极以及选择晶体管的栅极形成有光致抗蚀剂作为掩模。 此后,杂质的离子注入并在横向扩散,从而形成杂质扩散层。 由此,由于杂质扩散层由形成隧道氧化膜之后的杂质的横向扩散形成,所以可以防止隧道氧化膜的膜质量的劣化。