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31. 发明授权

US4089682A Cobalt-base sintered alloy 失效
标题翻译：钴基烧结合金
公开(公告)号：US4089682A
公开(公告)日：1978-05-16
申请号：US744783
申请日：1976-11-24
申请人： Yuichi Saito , Osamu Mayama
发明人： Yuichi Saito , Osamu Mayama
IPC分类号： B22F9/20 , C22C1/04 , C22C19/07 , B22F3/00
CPC分类号： C22C1/0433
摘要： A cobalt-base sintered alloy which comprises: being manufactured from a reduced powder by the conventional powder metallurgy process with said reduced powder as a material powder, said reduced powder being prepared by simultaneously reducing a mixed powder consisting of powders of oxides of elements constituting said sintered alloy with a carbon powder added and mixed therein, and said reduced powder consisting of powders of said constituent elements and powders of carbides thereof; and consisting essentially of, in weight percentage:Chromium from 15.0 to 35.0%Tungsten from 3.0 to 19.0%Nickel from 0.2 to 12.0%Molybdenum from 0.1 to 15.0%Iron from 0.05 to 5.00%Titanium from 0.05 to 2.00%Silicon from 0.05 to 1.50%Manganese from 0.05 to 1.00%Carbon from 0.2 to 3.5%AndThe balance cobalt and incidental impurities.The above-mentioned cobalt-base sintered alloy, also containing, in weight percentage, from 0.05 to 1.00% boron.These cobalt-base sintered alloys provide a relatively wide range of sintering temperatures applicable in the manufacture thereof, and have furthermore a high sintered density of at least 95% of the theoretical value and are excellent in machinability, heat resistance, wear resistance and corrosion resistance.
摘要翻译：一种钴基烧结合金，其特征在于，包括：通过常规粉末冶金方法用所述还原粉末作为原料粉末，由还原粉末制造，所述还原粉末通过同时还原由构成所述的粉末的元素的氧化物粉末组成的混合粉末烧结合金，其中加入和混合碳粉，所述还原粉末由所述组成元素的粉末和其碳化物粉末组成; 并基本上由重量百分比组成：

32. 发明授权

US09022189B2 Cask cushioning body 有权
标题翻译：酒柜缓冲体
公开(公告)号：US09022189B2
公开(公告)日：2015-05-05
申请号：US13701073
申请日：2011-06-28
申请人： Yuichi Saito , Junichi Kishimoto , Tadashi Kimura , Akio Kitada , Hiroki Tamaki
发明人： Yuichi Saito , Junichi Kishimoto , Tadashi Kimura , Akio Kitada , Hiroki Tamaki
IPC分类号： F16F7/12 , G21F5/08 , G21F9/36
CPC分类号： G21F5/08 , G21F9/36
摘要： A cask cushioning body includes an end-surface side member (2) in which a plurality of plates (21, 22) made of steel are formed at a distance between plate surfaces of the plates (21, 22) that face each other, and in which the plate surfaces of the plates (21, 22) are arranged along an end surface (100a) of a cask (100), and a circumferential-surface side member (3) that forms a cylindrical body (31) made of steel, one end of which is connected to a periphery of the end-surface side member (2), and that is arranged along an end-portion outer-circumferential surface (100b), wherein an impact absorber (4) that absorbs an impact by deforming is provided outside of the end-surface side member (2) and the circumferential-surface side member (3).
摘要翻译：一种桶式缓冲体，包括端面侧构件（2），在该端面侧构件（2）上形成有多个彼此相对的板（21,22）的板表面之间的距离的由钢制成的板（21,22），以及其特征在于，所述板（21,22）的板面沿着桶（100）的端面（100a）配置，并且形成由钢制成的圆筒体（31）的周面侧部件（3）其一端与端面侧构件（2）的周围连接，并且沿着端部外周面（100b）配置，其中，吸收冲击的冲击吸收体（4）在端面侧构件（2）和周面侧构件（3）的外侧设置有变形。

33. 发明授权

US08733757B2 Sheet processing apparatus, sheet conveying path opening method, and erasing apparatus 有权
标题翻译：片材处理设备，片材传送路径打开方法和擦除装置
公开(公告)号：US08733757B2
公开(公告)日：2014-05-27
申请号：US13529773
申请日：2012-06-21
申请人： Toshiaki Oshiro , Isao Yahata , Takahiro Kawaguchi , Yoshiaki Sugizaki , Kikuo Mizutani , Hiroyuki Taki , Hiroyuki Tsuchihashi , Chiaki Iizuka , Hidetoshi Yokochi , Ken Iguchi , Hiroyuki Hazu , Yoichi Yamaguchi , Hiroyuki Sugiyama , Yuichi Saito
发明人： Toshiaki Oshiro , Isao Yahata , Takahiro Kawaguchi , Yoshiaki Sugizaki , Kikuo Mizutani , Hiroyuki Taki , Hiroyuki Tsuchihashi , Chiaki Iizuka , Hidetoshi Yokochi , Ken Iguchi , Hiroyuki Hazu , Yoichi Yamaguchi , Hiroyuki Sugiyama , Yuichi Saito
IPC分类号： B65H7/02 , B65H33/04
CPC分类号： G03G21/00 , B65H2220/09 , B65H2402/31 , B65H2402/441 , B65H2601/11
摘要： A sheet processing apparatus includes: a conveying member configured to convey a sheet; a first opening section including a conveyance guide section arranged on the opposite side of the conveying member across a conveying path and configured to form the conveying path and a first pivot shaft configured to pivotably support the conveyance guide section, the first opening section being configured to form the conveying path using the conveyance guide section if changing to a closed state and open the conveying path if changing to an open state; and a second opening section including a cover section configured to cover the first opening section if the first opening section changes to the closed state and a second pivot shaft configured to pivotably support the cover section, the second opening section being configured to cause, if pivoting, the first opening section to pivot following the second opening section.
摘要翻译：一种片材处理设备包括：输送构件，用于输送片材; 第一开口部分，包括输送引导部分，该输送引导部分布置在输送部件的相对侧上并且构造成形成输送路径，第一枢轴构造成可枢转地支撑输送引导部，第一开口部被配置为如果改变为关闭状态，则使用输送引导部形成传送路径，如果改变为打开状态则打开输送路径; 以及第二开口部分，包括盖部分，其被构造成如果第一开口部分变为闭合状态则覆盖第一开口部分;以及第二枢转轴构造成可枢转地支撑盖部分，第二开口部分被构造成如果枢转，所述第一开口部分在所述第二开口部分之后枢转。

34. 发明授权

US08731129B2 Cask buffer body 有权
标题翻译：酒桶缓冲体
公开(公告)号：US08731129B2
公开(公告)日：2014-05-20
申请号：US10569226
申请日：2005-08-10
申请人： Hiroki Tamaki , Yuichi Saito , Kiminobu Hojo , Tadashi Kimura , Hiroshi Shimizu , Akio Kitada
发明人： Hiroki Tamaki , Yuichi Saito , Kiminobu Hojo , Tadashi Kimura , Hiroshi Shimizu , Akio Kitada
IPC分类号： G21C19/00
CPC分类号： G21F5/08 , G21Y2002/201 , G21Y2002/304 , G21Y2004/303
摘要： A first shock absorber group is obtained by combining a plurality of shock absorber blocks, absorbs a shock in a direction parallel to an end surface of a cask, consisting of a first material. A second shock absorber group absorbs the shock in a direction perpendicular to or oblique with respect to the end surface, consisting of a second material having a weaker compressive strength than the first material. A third shock absorber group absorbs the shock in a direction perpendicular to the end surface, consisting of a third material having a weaker compressive strength than the second material. A space is provided at least in the first shock absorber group.
摘要翻译：通过组合多个减震器块，在由第一材料构成的平行于桶的端面的方向吸收冲击来获得第一减震器组。第二减震器组在垂直于或相对于端面倾斜的方向上吸收冲击，由具有比第一材料更弱的抗压强度的第二材料组成。第三减震器组件在垂直于端面的方向上吸收冲击，由具有比第二材料更弱的抗压强度的第三材料组成。至少在第一减震器组中设置空间。

35. 发明申请

US20110003417A1 Active matrix substrate, method of making the substrate, and display device 有权
标题翻译：有源矩阵基板，制造基板的方法和显示装置
公开(公告)号：US20110003417A1
公开(公告)日：2011-01-06
申请号：US12807215
申请日：2010-08-31
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L21/336 , H01L33/02
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
摘要翻译：有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。栅极线形成在基底基板上。数据线形成在栅极线上。每条数据线与绝缘膜相交，跨越所有栅极线。薄膜晶体管形成在基底基板上。每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

36. 发明授权

US07858415B2 Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate 有权
标题翻译：图案薄膜，半导体元件和电路基板以及抗蚀剂材料，半导体元件和电路基板的制造方法
公开(公告)号：US07858415B2
公开(公告)日：2010-12-28
申请号：US11918398
申请日：2006-01-31
申请人： Yuichi Saito , Takeshi Hara
发明人： Yuichi Saito , Takeshi Hara
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , H01L27/1288 , H01L27/1292
摘要： The present invention provides production methods of a pattern thin film, a semiconductor element and a circuit substrate, capable of eliminating the number of photolithography processes needed for patterning; and a semiconductor element, a circuit substrate, and an electron device obtained by the production methods. The production method of the pattern thin film of the present invention is a production method of a pattern thin film, comprising the steps of: forming a first resist pattern film on a thin film formed on a substrate; forming a second resist pattern film; patterning the thin film using at least the second resist pattern film, wherein in the step of forming the second resist pattern film, a fluid resist material or an organic solvent is applied on a groove of a bank pattern formed using the first resist pattern film.
摘要翻译：本发明提供了能够消除图案化所需的光刻处理次数的图案薄膜，半导体元件和电路基板的制造方法; 以及通过制造方法得到的半导体元件，电路基板和电子元件。本发明的图案薄膜的制造方法是图案薄膜的制造方法，包括以下工序：在形成于基板上的薄膜上形成第一抗蚀剂图案膜; 形成第二抗蚀剂图案膜; 使用至少第二抗蚀剂图案膜对薄膜进行图案化，其中在形成第二抗蚀剂图案膜的步骤中，将流体抗蚀剂材料或有机溶剂施加到使用第一抗蚀剂图案膜形成的堤形图案的凹槽上。

37. 发明申请

US20100167443A1 Active matrix substrate, method of making the substrate, and display device 有权
公开(公告)号：US20100167443A1
公开(公告)日：2010-07-01
申请号：US12658555
申请日：2010-02-11
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L33/00
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

38. 发明授权

US07696516B2 Active matrix substrate, method of making the substrate, and display device 有权
公开(公告)号：US07696516B2
公开(公告)日：2010-04-13
申请号：US12283893
申请日：2008-09-16
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

39. 发明授权

US07459723B2 Active matrix substrate, method of making the substrate, and display device 有权
标题翻译：有源矩阵基板，制造基板的方法和显示装置
公开(公告)号：US07459723B2
公开(公告)日：2008-12-02
申请号：US11450810
申请日：2006-06-08
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
摘要翻译：有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。栅极线形成在基底基板上。数据线形成在栅极线上。每条数据线都插入绝缘膜，与所有栅极线交叉。薄膜晶体管形成在基底基板上。每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

40. 发明授权

US07409872B2 Vortex flow meter 失效
标题翻译：涡街流量计
公开(公告)号：US07409872B2
公开(公告)日：2008-08-12
申请号：US11647041
申请日：2006-12-28
申请人： Nobuyuki Ishikawa , Yuichi Saito
发明人： Nobuyuki Ishikawa , Yuichi Saito
IPC分类号： G01F1/32
CPC分类号： G01F1/3209 , G01F1/3245 , G01F15/006
摘要： It is an object to provide a vortex flow meter with less measurement errors caused by a temperature change, a pressure change, and a mechanical vibration, and capable of performing a precise measurement regardless of conditions, in addition, to provide a vortex flow meter capable of sufficiently preventing corrosive chemicals that is a fluid to be measured from leaking from a measurement pipe line due to corrosion.A vortex generator that generates the Karman vortex and a measurement pipe line in which a holder body housing a detecting element that detects an alternating force of the Karman vortex is disposed are made of a material having a small coefficient of linear thermal expansion such as a quartz glass, and the vortex generator and the holder body are fixed to the measurement pipe line by welding in an integrating manner.
摘要翻译：本发明的目的是提供一种涡流流量计，其具有由温度变化，压力变化和机械振动引起的较小的测量误差，并且能够执行精确的测量，而不管条件如何，另外还提供了一种能够提供的涡流流量计足以防止作为测量流体的腐蚀性化学品由于腐蚀而从测量管线泄漏。产生卡曼涡流的涡流发生器和设置有检测卡曼涡流的交替力的检测元件的保持体的测量管线由具有小的线性热膨胀系数的材料制成，例如石英玻璃，并且涡流发生器和保持器主体通过以积分的方式进行焊接而固定到测量管线。

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