专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07976717B2 Method of forming polarization reversal area, apparatus thereof and device using it 失效
标题翻译：形成极化反转区域的方法，其装置和使用它的装置
公开(公告)号：US07976717B2
公开(公告)日：2011-07-12
申请号：US12084061
申请日：2006-10-25
申请人： Xijun Li , Kazuya Terabe , Kenji Kitamura , Hideki Hatano
发明人： Xijun Li , Kazuya Terabe , Kenji Kitamura , Hideki Hatano
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25F3/00
CPC分类号： G02F1/3558 , Y10T428/12465
摘要： Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal.The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (μC/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship: 0.7×Ps≦Q≦5×Ps where Ps is the spontaneous polarization (μC/cm2) of the ferroelectric single crystal.
摘要翻译：提供了一种用于在铁电单晶中形成纳米级极化反转区域的方法和装置，以及使用铁电单晶的器件。根据本发明的用于在铁电单晶中形成极化反转区域的方法包括以下步骤：将铁电单晶的第一表面接地，并将第一表面相对的铁电单晶的第二表面与离子束。照射离子束使得在离子束照射的第二面上积累的电荷密度Q（μC/ cm 2）满足以下关系：0.7×Ps＆nlE; Q＆nlE; 5×Ps其中，Ps为自发极化（μC/ cm 2 ）的铁电单晶。

32. 发明授权

US07651675B2 Process for producing flaky titanium oxide capable of absorbing visible light 失效
标题翻译：能够吸收可见光的片状氧化钛的制造方法
公开(公告)号：US07651675B2
公开(公告)日：2010-01-26
申请号：US11662504
申请日：2005-09-13
申请人： Taki Matsumoto , Nobuo Iyi , Yoshiro Kaneko , Kenji Kitamura
发明人： Taki Matsumoto , Nobuo Iyi , Yoshiro Kaneko , Kenji Kitamura
IPC分类号： C01G23/047 , C01G25/00
CPC分类号： C09C1/0018 , B01J21/063 , B01J27/24 , B01J35/004 , B01J37/036 , C01G23/053 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2004/03 , C09C1/3607
摘要： When titanium oxide is doped with nitrogen, the resulting titanium oxide photocatalyst can be driven with visible light, which is a main component of sunlight. However, in a known process, since a high-temperature heat treatment process necessary for nitrogen doping degrades the photocatalytic activity inherent in titanium oxide, it is difficult to produce a titanium oxide photocatalyst that can be driven with a high efficiency under sunlight.A titania/organic substance composite, which includes an organic ligand coordinated to flaky titania and forms a layered structure, is immersed in aqueous ammonia to substitute the organic ligand between layers with a hydroxyl group by a ligand exchange reaction, and at the same time, to introduce ammonium into between layers of the titania having the layered structure. The resulting composite of titania and ammonium is heated at a temperature of 400° C. or higher and in such a temperature range that does not cause rutile transition, whereby nitrogen is doped into the titania by thermal decomposition of the ammonium and, in addition, titania is crystallized to an anatase form.
摘要翻译：当氧化钛掺杂氮时，所得到的氧化钛光催化剂可以作为阳光的主要成分的可见光驱动。然而，在已知的方法中，由于氮掺杂所需的高温热处理工艺降低了氧化钛中固有的光催化活性，因此难以生产能够在阳光下以高效率驱动的氧化钛光催化剂。将包含与片状二氧化钛配位并形成层状结构的有机配体的二氧化钛/有机物复合体浸渍在氨水中，通过配体交换反应将羟基的层间的有机配体取代，以将铵引入具有层状结构的二氧化钛的层之间。将所得的二氧化钛和铵的复合物在400℃以上的温度下加热，并且在不引起金红石转变的温度范围内，通过铵的热分解将氮掺杂到二氧化钛中，另外，二氧化钛结晶成锐钛矿形式。

33. 发明授权

US07446930B2 Method of inverting polarization by controlling defect density or degree of order of lattice points 有权
标题翻译：通过控制缺陷密度或者点阵次序来反转极化的方法
公开(公告)号：US07446930B2
公开(公告)日：2008-11-04
申请号：US10575271
申请日：2004-11-10
申请人： Kenji Kitamura , Sunao Kurimura , Masaru Nakamura , Shunji Takekawa , Kazuya Terabe , Shunichi Hishida , Tamaki Shimura
发明人： Kenji Kitamura , Sunao Kurimura , Masaru Nakamura , Shunji Takekawa , Kazuya Terabe , Shunichi Hishida , Tamaki Shimura
IPC分类号： G02F1/35 , G02F2/02
CPC分类号： G02F1/3558 , G02F2202/20
摘要： A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same.A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dcont1 than the defect density Dferro of a ferroelectric single crystal (Dferro
摘要翻译：要解决的问题是提供一种在施加电压的可控时间内在铁电单晶中形成短周期的畴反转区域的方法和使用其的光波长转换元件。其解决方法通过形成（i）具有比铁电单晶（D）的缺陷密度D 更大的缺陷密度D 的控制层来解决该问题或者形成（ii）具有比铁电单晶的格点的次序小的点阵次数的控制层，垂直于铁电单晶中的铁电单晶的偏振方向的面。

34. 发明授权

US06989055B2 Monoazo lake pigment composition and gravure ink using the same 失效
标题翻译： Monoazo湖颜料组合物和凹版油墨使用相同
公开(公告)号：US06989055B2
公开(公告)日：2006-01-24
申请号：US10634858
申请日：2003-08-06
申请人： Kenji Kitamura , Shigeki Kato , Hitoshi Maki , Shoko Goto , Motoi Shitaka , Osamu Shiromaru
发明人： Kenji Kitamura , Shigeki Kato , Hitoshi Maki , Shoko Goto , Motoi Shitaka , Osamu Shiromaru
IPC分类号： C09B67/08
CPC分类号： C09D11/037 , C09B41/003 , C09B63/005
摘要： A monoazo lake pigment composition containing a monoazo lake pigment obtained from a laked pigment aqueous slurry prepared by conducting coupling of a diazo component obtained by diazotizing an aromatic amine having a soluble group and a coupler component and conducting laking after or simultaneously with the coupling, wherein the laking is carried out in the presence of a water-soluble acrylic polymer in an amount of 0.1 to 40 parts by weight per 100 parts of the above coupler component, and a gravure ink containing the above pigment composition and a gravure ink vehicle.
摘要翻译：一种单偶氮色淀颜料组合物，其含有通过将通过重氮化具有可溶性基团的芳族胺和偶合剂组分获得的重氮组分并在偶合之后或与耦合同时进行的沉淀而制备的浸渍颜料含水浆料中获得的单偶氮颜料，其中在水溶性丙烯酸类聚合物存在下，每100份上述成色剂成分为0.1〜40重量份，含有上述颜料组合物的凹版油墨和凹版油墨载色剂进行浸渍。

35. 发明授权

US06747787B2 Optically functional device, single crystal substrate for the device and method for its use 有权
标题翻译：光功能器件，单晶衬底的器件及其使用方法
公开(公告)号：US06747787B2
公开(公告)日：2004-06-08
申请号：US09797596
申请日：2001-03-05
申请人： Yasunori Furukawa , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
发明人： Yasunori Furukawa , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
IPC分类号： G02F1355
CPC分类号： G02F1/0027 , G02F1/292 , G02F1/3534 , G02F1/3558 , G02F1/3775 , G02F1/39 , G02F2202/20
摘要： An optically functional device comprising a ferroelectric single crystal substrate and polarization-inverted structures formed at portions of the substrate at a temperature of not higher than the Curie temperature by an electron beam scanning irradiation method or a voltage application method and designed to control light passed through the polarization-inverted portions, wherein a LiNbO3 crystal having a molar ratio of Li/Nb within a range of from 0.95 to 1.01, is used as the substrate, so that the propagation loss of light passed through the polarization-inverted portions immediately after formation of the polarization-inverted structures, is not more than 2%.
摘要翻译：一种光功能元件，其特征在于，具有强电介质单晶基板和通过电子束扫描照射法或电压施加方法在不高于居里温度的温度下在基板的部分形成的偏振反转结构，并设计成控制通过的光使用其中Li / Nb的摩尔比在0.95〜1.01的范围内的LiNbO 3晶体作为基板，使得在形成之后立即通过偏振反转部分的光的传播损耗为偏振反转部分的极化反转结构不大于2％。

36. 发明授权

US06740935B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06740935B2
公开(公告)日：2004-05-25
申请号：US10195339
申请日：2002-07-15
申请人： Kenji Kitamura
发明人： Kenji Kitamura
IPC分类号： H01L2362
CPC分类号： H01L21/76218 , H01L21/823807 , H01L21/823842 , H01L21/823878 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a gate-insulating film formed on a semiconductor substrate. Gate electrodes comprised of P- and N-type polysilicon thin films and thin conductive films are formed over the gate-insulating film. The P- and N-type polysilicon thin films are doped with impurities at an impurity concentration sufficient to prevent depletion layers from being formed in the P- and N-type polysilicon thin films when a voltage is applied between each of the conductive thin films and the semiconductor substrate. Source and drain regions are formed over the semiconductor substrate in spaced-apart relation to one another and on opposite sides of the gate electrodes.
摘要翻译：半导体器件具有形成在半导体衬底上的栅极绝缘膜。在栅极绝缘膜上形成由P型和N型多晶硅薄膜构成的栅电极和薄导电膜。 P型和N型多晶硅薄膜掺杂有杂质浓度的杂质，其杂质浓度足以防止当在每个导电薄膜和/或多晶硅薄膜之间施加电压时在P型和N型多晶硅薄膜中形成耗尽层半导体衬底。源极和漏极区域形成在半导体衬底上彼此间隔开并且在栅电极的相对侧上。

37. 发明授权

US06673330B1 Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal 有权
标题翻译：铌酸锂或钽酸锂的单晶及其光学元件，以及用于生产氧化物单晶的工艺和设备
公开(公告)号：US06673330B1
公开(公告)日：2004-01-06
申请号：US09521899
申请日：2000-03-09
申请人： Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Shigeyuki Kimura
发明人： Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Shigeyuki Kimura
IPC分类号： C01D1500
CPC分类号： C30B15/12 , C30B15/00 , C30B29/30 , Y10T117/10
摘要： A single crystal of lithium niobate or lithium tantalate may be grown from a melt of a composition having a molar excess of Li compared to a melt having the stoichiometric amount of lithium, and having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/(Ta2O5+Li2O) within a range of at least 0.490 and less than 0.500. The single crystal also has at least one element selected from the group consisting of Mg, Zn, Sc and In, in an amount of from 0.1 to 3.0 mol % based on the total amount of the elements, Nb and Li, or the total amount of the elements, Ta and Li.
摘要翻译：铌酸锂或钽酸锂的单晶可以从具有摩尔过量的Li的组合物的熔体与具有化学计量的锂的熔体相比生长，并且具有Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O的摩尔分数 /（Ta2O5 + Li2O）在0.490以上且小于0.500的范围内。单晶还具有选自Mg，Zn，Sc和In中的至少一种元素，相对于元素的总量，Nb和Li为0.1〜3.0摩尔％，或者总量的元素，Ta和Li。

38. 发明授权

US06499572B2 Damping force generator 失效
标题翻译：阻尼力发电机
公开(公告)号：US06499572B2
公开(公告)日：2002-12-31
申请号：US09813322
申请日：2001-03-21
申请人： Tatsuya Masamura , Kenji Kitamura
发明人： Tatsuya Masamura , Kenji Kitamura
IPC分类号： F16F934
CPC分类号： F16F9/348 , F16F9/3235 , F16F9/3485
摘要： In a damping force generator for a hydraulic damper, the valve is protected from pressure rise in the damper and its durability is thereby enhanced. The damping force characteristics can be vary in stepwise fashion by providing a main leaf valve 21 and a sub-leaf valve which closes an opening 21A formed in the main leaf valve 21, and the approximate mid-point of the main leaf valve 21 is supported by a plurality of intermediate seat surfaces 16 from the side of a port 13. The outer circumference of a main leaf valve 64 is supported by an outer circumferential seat surface 62, and the outer circumference of a sub-leaf valve 65 extends outwards to the vicinity of a part where the outer circumference of the main leaf valve 64 and the outer circumferential seat surface 62 overlap.
摘要翻译：在用于液压阻尼器的阻尼力发生器中，阀被保护以防止阻尼器中的压力升高，从而增强其耐用性。阻尼力特性可以通过设置主叶片阀21和闭合形成在主叶片阀21中的开口21A的副叶片阀而逐步地变化，并且主叶片阀21的近似中点被支撑通过从端口13侧的多个中间座位表面16构成。主叶片阀64的外周由外圆周座表面62支撑，副叶片阀65的外周向外延伸至主叶片阀64和外周座表面62的外周重叠的部分附近。

39. 发明授权

US06469074B1 Composition of cyanate ester, epoxy resin and acid anhydride 有权
标题翻译：氰酸酯，环氧树脂和酸酐的组成
公开(公告)号：US06469074B1
公开(公告)日：2002-10-22
申请号：US09577612
申请日：2000-05-25
申请人： Hirohisa Hino , Taro Fukui , Kenji Kitamura , Shinji Hashimoto , Naoki Kanagawa
发明人： Hirohisa Hino , Taro Fukui , Kenji Kitamura , Shinji Hashimoto , Naoki Kanagawa
IPC分类号： C08K336
CPC分类号： C08G73/065 , C08G59/4014 , C08G59/4284 , Y10T428/31511
摘要： Disclosed is a liquid epoxy resin composition for sealing a semiconductor device which comprises (A) a cyanic acid ester, (B) an epoxy resin, (C) an inorganic filler, (D) a metal chelate and/or a metal salt, and at least one of (E1) an acid anhydride, (E2) a dihydrazide compound and (F) a silicone resin gel, wherein at least one of components A and B is liquid at room temperature, component E1 is liquid at room temperature, and the weight ratio of component C to the total weight of the composition, the weight ratio of component A to component B, and the weight ratio of component E1, E2 or F to the total weight of the composition except component C each ranges a specific ratio.
摘要翻译：公开了一种用于密封半导体器件的液体环氧树脂组合物，其包含（A）氰酸酯，（B）环氧树脂，（C）无机填料，（D）金属螯合物和/或金属盐，以及（E1）酸酐，（E2）二酰肼化合物和（F）有机硅树脂凝胶中的至少一种，其中组分A和B中的至少一种在室温下为液体，组分E1在室温下为液体，组分C与组合物总重量的重量比，组分A与组分B的重量比以及组分E1，E2和F与组合物除外的组合物总重量的重量比分别为特定比例。

40. 发明授权

US06369409B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06369409B1
公开(公告)日：2002-04-09
申请号：US08689867
申请日：1996-08-15
申请人： Hiroaki Takasu , Jun Osanai , Kenji Kitamura
发明人： Hiroaki Takasu , Jun Osanai , Kenji Kitamura
IPC分类号： F02K900
CPC分类号： H01L28/20 , H01L21/8221 , H01L21/84 , H01L27/0802 , H01L27/1203
摘要： It is an object to provide a highly precise bleeder resistance circuit having an accurate voltage division ratio and a small temperature coefficient of the resistance value and a highly precise semiconductor device having a small temperature coefficient using such a bleeder resistance circuit, e.g., a semiconductor device such as a voltage detector and a voltage regulator. Such characteristic features that the potential of electric conductors on the thin film resistors and electric conductors under the thin film resistors of a bleeder resistance circuit using thin film resistors is made almost equal to the potential of respective thin film resistors and that, when polysilicon is used in the thin film resistor, the dispersion of the resistance value is controlled and the temperature dependency of the resistance value is made lower by thinning the film thickness of the polysilicon thin film resistor are constituted.
摘要翻译：本发明的目的是提供具有精确的分压比和较小的电阻值温度系数的高精度放电电阻电路，以及使用这种泄放电阻电路（例如半导体器件）具有较小温度系数的高精度半导体器件例如电压检测器和电压调节器。使用薄膜电阻器的泄放电阻电路的薄膜电阻器和薄膜电阻器下方的电导体的电位与各薄膜电阻器的电位几乎相等的特征在于，当使用多晶硅时在薄膜电阻器中，控制电阻值的分散，并且通过使多晶硅薄膜电阻器的膜厚变薄来降低电阻值的温度依赖性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式