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31. 发明申请

US20070152172A1 OPTICAL PROPERTIES RESTORATION APPARATUS, THE RESTORATION METHOD, AND AN OPTICAL SYSTEM USED IN THE APPARATUS 有权
标题翻译：光学性质恢复装置，恢复方法和装置中使用的光学系统
公开(公告)号：US20070152172A1
公开(公告)日：2007-07-05
申请号：US11682800
申请日：2007-03-06
申请人： Satoshi Sakai , Shigenori Tsuruga , Hideo Yamakoshi , Shizuma Kuribayshi , Minoru Danno , Hiroshi Futami , Noriko Yamazaki
发明人： Satoshi Sakai , Shigenori Tsuruga , Hideo Yamakoshi , Shizuma Kuribayshi , Minoru Danno , Hiroshi Futami , Noriko Yamazaki
IPC分类号： A61N5/00
CPC分类号： G02B27/0006 , B08B7/0035 , B08B17/00 , G02B1/14
摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH— ions, ozone, O2— ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.
摘要翻译：本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。，减少窗户更换等维护操作的频率，降低这种操作的成本。本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区产生负离子或自由基，例如包含氧原子的不稳定的化学种子，例如OH自由基，OH-离子，臭氧，O 2 - 离子，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

32. 发明授权

US07190512B2 Optical properties restoration apparatus, the restoration method, and an optical system used in the apparatus 有权
标题翻译：光学性能恢复装置，恢复方法以及该装置中使用的光学系统
公开(公告)号：US07190512B2
公开(公告)日：2007-03-13
申请号：US10833998
申请日：2004-04-29
申请人： Satoshi Sakai , Shigenori Tsuruga , Hideo Yamakoshi , Shizuma Kuribayashi , Minoru Danno , Hiroshi Futami , Noriko Yamazaki
发明人： Satoshi Sakai , Shigenori Tsuruga , Hideo Yamakoshi , Shizuma Kuribayashi , Minoru Danno , Hiroshi Futami , Noriko Yamazaki
IPC分类号： G02B1/00 , G06K7/10
CPC分类号： G02B27/0006 , B08B7/0035 , B08B17/00 , G02B1/14
摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH− ions, ozone, O2− ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.
摘要翻译：本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。，减少窗户更换等维护操作的频率，降低这种操作的成本。本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区域产生负离子或自由基，例如含有氧原子的不稳定的化学种子，例如OH基，OH - ，O 2 - ， - O - 离子，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

33. 发明申请

US20060275969A1 Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method 审中-公开
公开(公告)号：US20060275969A1
公开(公告)日：2006-12-07
申请号：US11503161
申请日：2006-08-14
申请人： Satoshi Sakai , Daichi Matsumoto , Katsuyuki Asaka , Masatoshi Hasegawa , Kazutaka Mori
发明人： Satoshi Sakai , Daichi Matsumoto , Katsuyuki Asaka , Masatoshi Hasegawa , Kazutaka Mori
IPC分类号： H01L21/8234
CPC分类号： H01L27/10894 , H01L27/105 , H01L27/10814 , H01L27/10897 , H01L27/11 , H01L27/1104 , H01L27/1116
摘要： Mutual diffusion of impurities in a gate electrode is suppressed near a boundary between an n-channel type MISFET and a p-channel type MISFET, which adopt a polycide's dual-gate structure. Since a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are of mutually different conductivity types, they are separated to prevent the mutual diffusion of the impurities and are electrically connected to each other via a metallic wiring formed in the following steps. In a step before a gate electrode material is patterned to separate the gate electrodes, the mutual diffusion of the impurities before forming the gate electrodes is prevented by performing no heat treatment at a temperature of 700° C. or higher.

34. 发明授权

US06962880B2 Method for fabricating semiconductor integrated circuit device 有权
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US06962880B2
公开(公告)日：2005-11-08
申请号：US10774406
申请日：2004-02-10
申请人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
IPC分类号： H01L21/00 , H01L21/28 , H01L21/306 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/336 , H01L21/469 , H01L21/76 , H01L21/8238 , H01L29/423 , H01L29/51
CPC分类号： H01L21/31662 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L21/67109 , H01L21/67167 , H01L21/67173 , H01L21/67213 , H01L21/67219 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L29/42364 , H01L29/518 , Y10S148/023 , Y10S148/116 , Y10S438/935
摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
摘要翻译：制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm或更小的薄氧化膜，其足以确保形成氧化膜的保真度，以及氧化膜厚度均匀。

35. 发明申请

US20050208731A1 Method for fabricating semiconductor integrated circuit device 有权
公开(公告)号：US20050208731A1
公开(公告)日：2005-09-22
申请号：US11132306
申请日：2005-05-19
申请人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
IPC分类号： H01L21/00 , H01L21/28 , H01L21/306 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/336 , H01L21/469 , H01L21/76 , H01L21/8238 , H01L29/423 , H01L29/51
CPC分类号： H01L21/31662 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L21/67109 , H01L21/67167 , H01L21/67173 , H01L21/67213 , H01L21/67219 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L29/42364 , H01L29/518 , Y10S148/023 , Y10S148/116 , Y10S438/935
摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

36. 发明授权

US06909133B2 Method for manufacturing semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US06909133B2
公开(公告)日：2005-06-21
申请号：US10699690
申请日：2003-11-04
申请人： Ryoichi Furukawa , Satoshi Sakai , Satoshi Yamamoto
发明人： Ryoichi Furukawa , Satoshi Sakai , Satoshi Yamamoto
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/78 , H01L29/108
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
摘要翻译：在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。因此，基板不会暴露在空气中。因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。

37. 发明授权

US06898404B2 Liquid development electrophotographic device 失效
标题翻译：液体显影电子照相装置
公开(公告)号：US06898404B2
公开(公告)日：2005-05-24
申请号：US10466485
申请日：2002-08-05
申请人： Satoshi Sakai , Isao Nagata , Hironaga Hongawa , Shigeharu Okano , Eri Yamanishi , Yutaka Nakashima , Akihiko Inamoto , Tadashi Nishikawa , Norihiro Yamasaku
发明人： Satoshi Sakai , Isao Nagata , Hironaga Hongawa , Shigeharu Okano , Eri Yamanishi , Yutaka Nakashima , Akihiko Inamoto , Tadashi Nishikawa , Norihiro Yamasaku
IPC分类号： G03G15/11 , G03G15/10
CPC分类号： G03G15/11 , G03G2215/0106 , G03G2215/0119 , G03G2215/0187
摘要： A liquid-development electrophotographic apparatus forms on a toner-image-bearing body a plurality of color images developed by a plurality of developing units, one for each color, that use liquid toner. One or more carrier-removing units for removing excessive carrier from a toner layer that forms a toner image are disposed downstream of each developing unit and upstream of the next developing unit disposed upstream of the former developing unit with respect to a process progress direction. Each carrier-removing unit includes two or more conductive collection rollers to which a bias voltage is applied in such a direction as to press toner against the toner-image-bearing body and which is brought into contact with the toner-image-bearing body. The upstream roller is rotated in the same direction as the direction of surface movement of the toner-image-bearing body, whereas the downstream roller is rotated in the opposite direction. The result is that influence of carrier on the already transferred image is suppressed, and hence occurrences of irregular transfer of the images and occurrences of disturbance of the already transferred image are minimized.
摘要翻译：液体显影电子照相设备在调色剂图像承载体上形成由多个显影单元显影的多个彩色图像，每个显影单元一个用于各种颜色，使用液体调色剂。一个或多个用于从形成调色剂图像的调色剂层除去过量载体的载体去除单元设置在每个显影单元的下游，并且相对于处理进行方向设置在位于前显影单元上游的下一个显影单元的上游。每个载体移除单元包括两个或更多个导电收集辊，偏压在该方向上施加，以将调色剂压靠在调色剂图像承载体上并与调色剂图像承载体接触。上游辊沿着与调色剂图像承载体的表面运动方向相同的方向旋转，而下游辊沿相反方向旋转。结果是，载波对已经传送的图像的影响被抑制，因此图像的不规则传送和已经传送的图像的干扰出现的发生被最小化。

38. 发明申请

US20050077548A1 Method for manufacturing semiconductor integrated circuit device 有权
公开(公告)号：US20050077548A1
公开(公告)日：2005-04-14
申请号：US10968050
申请日：2004-10-20
申请人： Ryoichi Furukawa , Satoshi Sakai , Satoshi Yamamoto
发明人： Ryoichi Furukawa , Satoshi Sakai , Satoshi Yamamoto
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/78 , H01L23/62
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

39. 发明授权

US06417114B1 Method for fabricating semiconductor integrated circuit device 有权
公开(公告)号：US06417114B1
公开(公告)日：2002-07-09
申请号：US09752736
申请日：2001-01-03
申请人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
IPC分类号： C23C1600
摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

40. 发明授权

US06411862B1 Apparatus and method for managing and distributing design and manufacturing information throughout a sheet metal production facility 有权
标题翻译：在整个钣金生产设备中管理和分配设计和制造信息的装置和方法
公开(公告)号：US06411862B1
公开(公告)日：2002-06-25
申请号：US09272095
申请日：1999-03-18
申请人： Kensuke Hazama , Kalev Kask , Satoshi Sakai , Anand Subbaraman
发明人： Kensuke Hazama , Kalev Kask , Satoshi Sakai , Anand Subbaraman
IPC分类号： G06F1900
CPC分类号： G06T19/00 , G05B19/4097 , G05B19/4181 , G06Q10/06 , G06T7/41 , G06T2207/30136 , Y02P90/06 , Y02P90/265 , Y10S707/99944 , Y10S715/964
摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.
摘要翻译：提供了一种用于在整个工厂中管理和分配设计和制造信息的装置和方法，以便于生产诸如弯曲的金属板零件的部件。根据本发明的一个方面，通过存储和分发与每个作业相关联的设计和制造信息来实现关键设计和制造信息的管理和分发。通过用例如工厂中的任何位置即时访问的电子存储工作表来代替传统的纸张作业设置或工作表，本发明提高了工厂的整体效率。另外，通过本发明的各个方面和特征，改进了部件信息的组织和可访问性以及存储的专家知识。

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