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31. 发明申请

US20110050686A1 THREE-DIMENSIONAL DATA DISPLAY APPARATUS AND METHOD 审中-公开
标题翻译：三维数据显示装置和方法
公开(公告)号：US20110050686A1
公开(公告)日：2011-03-03
申请号：US12862981
申请日：2010-08-25
申请人： Kai NOJIMA , Atsushi Takeuchi , Kenji Nagase , Eiji Ohta
发明人： Kai NOJIMA , Atsushi Takeuchi , Kenji Nagase , Eiji Ohta
IPC分类号： G06T15/00
CPC分类号： G06F3/04815
摘要： A three-dimensional data display apparatus is provided with a screen display processing section that generates a display screen with a structure arranged in a virtual space of a three-dimensional orthogonal coordinate system based on structure information stored in a data storage section and displays the display screen on a monitor, a grid setting-updating section that sets a grid in the virtual space, an operation information acquiring section that acquires operation information from a mouse, an input point position calculation section that calculates coordinates of an input point in the virtual space, calculates a moving destination of the input point based on the operation information, selects coordinates nearest to the moving destination of the input point from any one of the coordinates of each grid lattice based on the grid in the virtual space, the coordinates of a boundary of the structure and the coordinates of the point of intersection between the boundary of the structure and the grid and updates the coordinates of the input point and an input point display processing section that displays the input point at the updated coordinates.
摘要翻译：三维数据显示装置具有：屏幕显示处理部，其基于存储在数据存储部中的结构信息，生成具有布置在三维正交坐标系的虚拟空间中的结构的显示画面，并显示该显示画面屏幕，在虚拟空间中设置网格的网格设置更新部分，从鼠标获取操作信息的操作信息获取部分，计算虚拟空间中的输入点的坐标的输入点位置计算部分基于操作信息计算输入点的移动目的地，基于虚拟空间中的网格，从每个网格的任意一个坐标中选择最接近输入点的移动目的地的坐标，边界的坐标的结构和坐标点之间的交点的结构a的边界 d网格并更新输入点的坐标和在更新的坐标处显示输入点的输入点显示处理部分。

32. 发明申请

US20100142306A1 SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE, AND SYSTEM 有权
标题翻译：半导体存储器，半导体器件和系统
公开(公告)号：US20100142306A1
公开(公告)日：2010-06-10
申请号：US12631353
申请日：2009-12-04
申请人： Toshikazu NAKAMURA , Atsushi Takeuchi , Atsushi Nakakubo
发明人： Toshikazu NAKAMURA , Atsushi Takeuchi , Atsushi Nakakubo
IPC分类号： G11C5/14
CPC分类号： G11C8/08 , G11C5/145 , G11C8/18 , G11C11/406 , G11C11/4074
摘要： A semiconductor memory includes: a voltage supply circuit which supplies a first voltage to a word line when an internal circuit is in a standby state, and supplies a second voltage higher than the first voltage to the word line when the internal circuit is in an active state; and a control circuit changes a drive capacity of the voltage supply circuit when changing from the standby state to the active state and the second voltage is supplied to the word line.
摘要翻译：半导体存储器包括：当内部电路处于待机状态时向字线提供第一电压的电压供应电路，并且当内部电路处于活动状态时将高于第一电压的第二电压提供给字线州; 并且当从待机状态变为激活状态并且第二电压被提供给字线时，控制电路改变电压供应电路的驱动能力。

33. 发明授权

US07679424B2 Semiconductor device with pad switch 失效
标题翻译：半导体器件带垫开关
公开(公告)号：US07679424B2
公开(公告)日：2010-03-16
申请号：US11798329
申请日：2007-05-11
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： H03K17/00
CPC分类号： H03K17/687 , H01L2224/05554 , H01L2924/13091 , H03K17/693 , H01L2924/00
摘要： A semiconductor device includes a pad, an internal power supply line, a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof, and a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor, wherein the control circuit is configured such that at least one of the gate node and the back-gate node is electrically connectable to the pad.
摘要翻译：半导体器件包括焊盘，内部电源线，包括MOS晶体管的焊盘开关，其通过使用其源极 - 漏极通道在内部电源线和焊盘之间提供可电连接，以及控制电路配置以控制关于MOS晶体管的栅极节点和背栅极节点中的至少一个的电连接，其中控制电路被配置为使得栅极节点和背栅极节点中的至少一个可电连接到垫子

34. 发明授权

US07643382B2 Preheat bulk erasing device for phase-change type optical disk 有权
标题翻译：相变式光盘预热批量擦除装置
公开(公告)号：US07643382B2
公开(公告)日：2010-01-05
申请号：US11252018
申请日：2005-10-17
申请人： Hiroshi Nakayama , Atsushi Takeuchi , Junichi Nemoto , Hiroyuki Miura
发明人： Hiroshi Nakayama , Atsushi Takeuchi , Junichi Nemoto , Hiroyuki Miura
IPC分类号： G11B11/00
CPC分类号： G11B7/00557 , G11B7/268 , G11B11/10526 , G11B11/10582
摘要： When carrying out magnetization, annealing, and initialization of a recording film by applying a laser beam to the recording film while rotating an optical recording medium 10 by a motor 11, light of a strong visible-light lamp 15 is projected as parallel light to a reflecting mirror 14 via a lens 16 so as to apply light reflected by the reflecting mirror 14 to an area wider than a spot of the laser beam on the medium 10 for heating. At that time, a control unit 18 controls an intensity of the strong visible-light lamp 15 to raise a temperature of the medium 10 to a temperature of 80° C. or higher and a softening point of a substrate or lower, for example.
摘要翻译：当通过用马达11旋转光学记录介质10而将激光束施加到记录膜上来进行记录膜的磁化，退火和初始化时，强可见光灯15的光作为平行光投射到通过透镜16反射镜14，以将由反射镜14反射的光施加到比介质10上的加热用激光束的光斑宽的区域。此时，控制单元18控制强可见光灯15的强度，以使介质10的温度升高到例如80℃以上的温度和基板的软化点以下。

35. 发明申请

US20090192683A1 Vehicle control device, vehicle control method and computer program 有权
标题翻译：车辆控制装置，车辆控制方法和计算机程序
公开(公告)号：US20090192683A1
公开(公告)日：2009-07-30
申请号：US12289998
申请日：2008-11-10
申请人： Yoshito Kondou , Takayuki Miyajima , Atsushi Takeuchi , Yoshiyuki Yasui , Hiroyuki Kodama
发明人： Yoshito Kondou , Takayuki Miyajima , Atsushi Takeuchi , Yoshiyuki Yasui , Hiroyuki Kodama
IPC分类号： G08G1/16 , B60W10/00 , B60W10/10 , B60W10/18
CPC分类号： B60W30/095 , B60T2201/02 , B60T2201/022 , B60T2201/024 , B60T2210/36 , B60W10/18 , B60W10/20 , B60W30/09 , B60W2050/0078 , B60W2550/402 , F16H61/16 , F16H61/21 , F16H2059/666
摘要： An anti-collision control is provided under circumstances where it is determined that there is a risk of collision between a host vehicle and a preceding vehicle. The anti-collision control utilizes host vehicle information, preceding vehicle information, and surrounding road conditions to determine whether or not a collision with the preceding vehicle can be avoided through a steering operation. If avoidance is determined to be possible, then a shift-hold control is applied to the AT, whereas if avoidance is determined to be impossible, then a down-shift control is applied to the AT.
摘要翻译：在确定存在本车辆与前一车辆之间存在碰撞的风险的情况下，提供防碰撞控制。防撞控制利用主车辆信息，车辆前面的信息和周围的道路状况来确定是否能够通过转向操作来避免与前方车辆的碰撞。如果避免被确定为可能，则将移位保持控制应用于AT，而如果避免被确定为不可能，则将向下移动控制应用于AT。

36. 发明授权

US07538602B2 Semiconductor integrated circuit with stepped-down voltage generating circuit 有权
标题翻译：具有降压产生电路的半导体集成电路
公开(公告)号：US07538602B2
公开(公告)日：2009-05-26
申请号：US11651966
申请日：2007-01-11
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： G05F3/16 , H02M3/16
CPC分类号： G05F3/242 , G11C5/145 , H02M1/36 , H02M3/073 , H02M2001/0032 , H03K5/2481 , Y02B70/16
摘要： A semiconductor integrated circuit includes a voltage generating circuit configured to generate a predetermined voltage, an NMOS transistor configured to receive at a gate node thereof the predetermined voltage generated by the voltage generating circuit, to receive at a drain node thereof an external power supply voltage, and to generate at a source node thereof a stepped-down voltage by reducing the external power supply voltage in response to the predetermined voltage, and a PMOS transistor, provided between the drain node of the NMOS transistor and the external power supply voltage, configured to receive at a gate node thereof a power-down signal indicative of a power-down mode. The predetermined voltage applied to the gate node of the NMOS transistor is set to LOW in response to a HIGH state of the power-down signal applied to the gate node of the PMOS transistor.
摘要翻译：半导体集成电路包括：电压产生电路，被配置为产生预定电压; NMOS晶体管，被配置为在其栅极节点处接收由所述电压产生电路产生的预定电压，以在其漏极节点接收外部电源电压; 并且在其源节点处通过响应于预定电压减小外部电源电压而产生降压电压，以及设置在NMOS晶体管的漏极节点和外部电源电压之间的PMOS晶体管，被配置为在其门节点处接收指示掉电模式的掉电信号。响应于施加到PMOS晶体管的栅极节点的掉电信号的HIGH状态，施加到NMOS晶体管的栅极节点的预定电压被设置为LOW。

37. 发明授权

US07336108B2 Semiconductor integrated circuit with stepped-up voltage pump circuit 有权
标题翻译：具有升压电压泵电路的半导体集成电路
公开(公告)号：US07336108B2
公开(公告)日：2008-02-26
申请号：US11127153
申请日：2005-05-12
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： H03K3/023 , G05F1/575
CPC分类号： G05F3/242 , G11C5/145 , H02M1/36 , H02M3/073 , H02M2001/0032 , H03K5/2481 , Y02B70/16
摘要： A semiconductor integrated circuit includes a pump circuit configured to raise an external power supply voltage to generate a stepped-up voltage, and a detector circuit configured to detect the stepped-up voltage generated by the pump circuit to control activation/deactivation of the pump circuit, wherein the detector circuit includes a differential amplifier configured to compare the stepped-up voltage with a reference voltage, and a current control circuit configured to control an amount of a bias current running through the differential amplifier in response to the activation/deactivation of the pump circuit.
摘要翻译：半导体集成电路包括：泵电路，其被配置为升高外部电源电压以产生升压电压;以及检测器电路，被配置为检测由所述泵电路产生的升压电压以控制所述泵电路的激活/去激活，其中所述检测器电路包括被配置为将所述升压电压与参考电压进行比较的差分放大器，以及电流控制电路，其被配置为响应于所述差动放大器的激活/去激活来控制流过所述差分放大器的偏置电流的量泵电路。

38. 发明申请

US20070159896A1 Voltage supply circuit and semiconductor memory 有权
公开(公告)号：US20070159896A1
公开(公告)日：2007-07-12
申请号：US11712424
申请日：2007-03-01
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： G11C5/14 , G11C7/00
CPC分类号： G11C11/4074 , G11C5/14 , G11C7/12 , G11C11/4094 , G11C2207/2227
摘要： Each of first and second differential amplifiers has a function of increasing a bias current in response to the activation of a drivability control signal. A first driving circuit connects an output node to a high power supply line in response to the activation of an output signal of the first differential amplifier, and connects the output node to a low power supply line in response to the activation of an output signal of the second differential amplifier. Only during the activation period of the drivability control signal, a second driving circuit connects the output node to the high power supply line in response to the activation of the output signal of the first differential amplifier, and connects the output node to the low power supply line in response to the activation of the output signal of the second differential amplifier.

39. 发明申请

US20070109036A1 Semiconductor integrated circuit with reduced current consumption 有权
标题翻译：半导体集成电路具有降低的电流消耗
公开(公告)号：US20070109036A1
公开(公告)日：2007-05-17
申请号：US11651966
申请日：2007-01-11
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： G05F1/10
CPC分类号： G05F3/242 , G11C5/145 , H02M1/36 , H02M3/073 , H02M2001/0032 , H03K5/2481 , Y02B70/16
摘要： A semiconductor integrated circuit includes a pump circuit configured to raise an external power supply voltage to generate a stepped-up voltage, and a detector circuit configured to detect the stepped-up voltage generated by the pump circuit to control activation/deactivation of the pump circuit, wherein the detector circuit includes a differential amplifier configured to compare the stepped-up voltage with a reference voltage, and a current control circuit configured to control an amount of a bias current running through the differential amplifier in response to the activation/deactivation of the pump circuit.
摘要翻译：半导体集成电路包括：泵电路，其被配置为升高外部电源电压以产生升压电压;以及检测器电路，被配置为检测由所述泵电路产生的升压电压以控制所述泵电路的激活/去激活，其中所述检测器电路包括被配置为将所述升压电压与参考电压进行比较的差分放大器，以及电流控制电路，其被配置为响应于所述差动放大器的激活/去激活来控制流过所述差分放大器的偏置电流的量泵电路。

40. 发明申请

US20060291317A1 Voltage supply circuit and semiconductor memory 有权
标题翻译：电源电路和半导体存储器
公开(公告)号：US20060291317A1
公开(公告)日：2006-12-28
申请号：US11260196
申请日：2005-10-28
申请人： Atsushi Takeuchi
发明人： Atsushi Takeuchi
IPC分类号： G11C5/14
CPC分类号： G11C11/4074 , G11C5/14 , G11C7/12 , G11C11/4094 , G11C2207/2227
摘要： Each of first and second differential amplifiers has a function of increasing a bias current in response to the activation of a drivability control signal. A first driving circuit connects an output node to a high power supply line in response to the activation of an output signal of the first differential amplifier, and connects the output node to a low power supply line in response to the activation of an output signal of the second differential amplifier. Only during the activation period of the drivability control signal, a second driving circuit connects the output node to the high power supply line in response to the activation of the output signal of the first differential amplifier, and connects the output node to the low power supply line in response to the activation of the output signal of the second differential amplifier.
摘要翻译：第一和第二差分放大器中的每一个具有响应于驾驶性能控制信号的激活而增加偏置电流的功能。响应于第一差分放大器的输出信号的激活，第一驱动电路将输出节点连接到高电源线，并且响应于激活输出信号的输出信号而将输出节点连接到低电源线第二个差分放大器。仅在驾驶员控制信号的激活期间，响应于第一差分放大器的输出信号的激活，第二驱动电路将输出节点连接到高电源线，并将输出节点连接到低电源响应于第二差分放大器的输出信号的激活。

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