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    • 34. 发明授权
    • Semiconductor device with high electric field effect mobility
    • 具有高电场效应迁移率的半导体器件
    • US06232622B1
    • 2001-05-15
    • US09406819
    • 1999-09-28
    • Hiroki Hamada
    • Hiroki Hamada
    • H01L2976
    • H01L29/78696G02F1/13454H01L29/66757H01L29/66765H01L29/78621H01L29/78675
    • A polycrystalline silicon TFT of a top-gate type having a polycrystalline silicon film functioning as an active layer on a transparent insulating substrate. A gate electrode is provided on a channel region of the polycrystalline silicon film via a gate insulating film. On both sides of the channel region, source-drain regions of LDD structure consisting of low impurity concentration regions and high impurity concentration regions are provided. In the channel region of the polycrystalline silicon film, multiple monocrystal regions connecting source-drain regions are provided perpendicular to the transparent insulating substrate. Though electrons cannot smoothly pass through the channel region of the polycrystalline silicon film because of crystal grain boundaries and crystal defects therein, electric field effect mobility can be heightened by providing monocrystal regions, since electrons can smoothly pass through the monocrystal regions.
    • 一种顶栅型的多晶硅TFT,其具有在透明绝缘基板上用作有源层的多晶硅膜。 栅电极通过栅极绝缘膜设置在多晶硅膜的沟道区上。 在沟道区域的两侧,设置由低杂质浓度区域和高杂质浓度区域构成的LDD结构的源极 - 漏极区域。 在多晶硅膜的沟道区域中,连接源极 - 漏极区的多个单晶区垂直于透明绝缘基片设置。 尽管电子由于其晶界和晶体缺陷而不能平滑地通过多晶硅膜的沟道区,但通过提供单晶区,可以提高电场效应迁移率,因为电子可以平滑地通过单晶区。