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    • 34. 发明授权
    • Non-volatile memory device capable of generating accurate reference current for determination
    • 能够产生准确的参考电流以进行确定的非易失性存储器件
    • US06781873B2
    • 2004-08-24
    • US10364329
    • 2003-02-12
    • Masatoshi IshikawaHiroaki Tanizaki
    • Masatoshi IshikawaHiroaki Tanizaki
    • G11C1115
    • G11C7/14G11C11/15G11C11/16
    • In a memory cell array of an MRAM, a reference memory cell holding a reference value can generate accurate reference current of an intermediate value of data by uniformly supplying reference current to two sense amplifiers using two cells of a cell holding “H” data and a cell holding “L” data. Each bit line is connected to a data-storing memory cell and to the reference memory cell. When the data-storing memory cell connected to a bit line is accessed, the reference memory cell is accessed on the adjacent bit line. Only one row of reference memory cells is provided, reducing the chip area. Therefore, a non-volatile memory device that can reduce the area of a reference cell occupied on a chip while generating accurate reference current for determination can be provided.
    • 在MRAM的存储单元阵列中,保持参考值的参考存储单元可以通过使用保持“H”数据的单元的两个单元均匀地向两个读出放大器提供参考电流来产生数据的中间值的精确参考电流, 单元格保持“L”数据。 每个位线连接到数据存储存储单元和参考存储单元。 当访问连接到位线的数据存储存储单元时,在相邻位线上访问参考存储单元。 仅提供一行参考存储单元,减少了芯片面积。 因此,可以提供能够减少芯片占用的参考单元的面积同时产生用于确定的精确参考电流的非易失性存储器件。