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    • 32. 发明授权
    • Image sensor and method for driving an image sensor for reducing fixed pattern noise
    • 用于驱动图像传感器以降低固定图案噪声的图像传感器和方法
    • US06950132B1
    • 2005-09-27
    • US09161405
    • 1998-09-28
    • Hiraku Kozuka
    • Hiraku Kozuka
    • H01L27/146H04N1/028H04N5/365H04N5/369H04N5/374H04N5/378H04N9/64
    • H04N5/3653H04N5/3694H04N5/378
    • There is provided a method of driving an image sensor which can remove FPN resulting from inter-chip variations without requiring any dark correction. A semiconductor photosensor chip has a plurality of sensor modules mounted on a mounting substrate, and a semiconductor device in which at least an N signal input buffer circuit for receiving N signals, an S signal input buffer circuit for receiving S signals, a differential circuit for calculating any difference between the outputs from the N and S signal input buffer circuits, and a voltage clamping circuit for clamping the output from the differential circuit are formed on a single semiconductor substrate, and the voltage clamping circuit clamps the reset state of S and N signal common output line.
    • 提供了一种驱动图像传感器的方法,其可以去除由芯片间变化产生的FPN,而不需要任何黑暗校正。 半导体光电传感器芯片具有安装在安装基板上的多个传感器模块,以及半导体器件,其中至少N个用于接收N个信号的N信号输入缓冲电路,用于接收S个信号的S信号输入缓冲电路,用于接收S信号的差分电路 计算来自N和S信号输入缓冲电路的输出之间的差值,并且在单个半导体衬底上形成用于钳位差分电路的输出的钳位电路,并且钳位电路钳位S和N的复位状态 信号公共输出线。
    • 33. 发明授权
    • Light-receiving element and photoelectric conversion device
    • 光接收元件和光电转换装置
    • US06649951B2
    • 2003-11-18
    • US10284296
    • 2002-10-31
    • Hiraku KozukaToru KoizumiKoji Sawada
    • Hiraku KozukaToru KoizumiKoji Sawada
    • H01L31103
    • H01L27/14603H01L31/0352H01L31/103
    • In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
    • 为了减小光接收元件的电容,本发明提供了一种光接收元件,其包括第一导电类型的第一半导体区域和设置在第一半导体区域上的第二导电类型的第二半导体区域, 设置在第二半导体区域和绝缘膜之间的第一导电类型的第三半导体区域和设置在第二半导体区域中的第二导电类型的电极区域,其中第二半导体区域不在第二半导体区域上方 并连接到由导体组成的阳极或阴极电极。
    • 35. 发明授权
    • Photoelectric conversion apparatus having reset noise holding and removing units
    • 具有复位噪声保持和去除单元的光电转换装置
    • US06538693B1
    • 2003-03-25
    • US08786183
    • 1997-01-21
    • Hiraku Kozuka
    • Hiraku Kozuka
    • H04N5217
    • H04N5/363
    • In a one-dimensional or two-dimensional photoelectric converting apparatus for simultaneously executing an accumulation of a photosignal and an output of a signal, in order to remove a reset noise of a sensor unit and to reduce a random noise, the apparatus has a photosensor, a resetting circuit of the photosensor, noise signal holding elements for holding a noise signal when a resetting operation of the photosensor is executed, and a noise signal removing circuit for removing a noise from the signal accumulated in the photosensor after completion of the same resetting operation by using the noise signal held.
    • 在用于同时执行光信号的累积和信号的输出的一维或二维光电转换装置中,为了消除传感器单元的复位噪声并减少随机噪声,该装置具有光电传感器 ,光传感器的复位电路,执行光电传感器的复位动作时保持噪声信号的噪声信号保持元件,以及在完成同样的复位之后从累积在光电传感器中的信号中除去噪声的噪声信号去除电路 通过使用噪声信号进行操作。
    • 36. 发明授权
    • Photoelectric conversion apparatus
    • 光电转换装置
    • US06531690B2
    • 2003-03-11
    • US09562640
    • 2000-05-02
    • Hiraku Kozuka
    • Hiraku Kozuka
    • H01L2700
    • H01L27/14678H01L27/14643
    • For implementing optional setting of resolutions in a main scanning direction and in a sub-scanning direction and attaining of higher recording speed in a low resolution mode, a photoelectric conversion apparatus is provided with a plurality of photodetectors arrayed in the main scanning direction and in the sub-scanning direction, and a resolution switching circuit for effecting switching between resolutions by selecting read signals to be read from the photodetectors arrayed in the main scanning direction and in the sub-scanning direction.
    • 为了在主扫描方向和副扫描方向上实现分辨率的可选设置,并且在低分辨率模式下获得较高的记录速度,光电转换装置设置有沿主扫描方向排列的多个光电检测器 副扫描方向,以及分辨率切换电路,用于通过选择从主扫描方向和副扫描方向排列的光电检测器读取的读取信号来实现分辨率之间的切换。
    • 40. 发明授权
    • Method for producing non-monocrystalline semiconductor device
    • 非单晶半导体器件的制造方法
    • US5420044A
    • 1995-05-30
    • US212918
    • 1994-03-15
    • Hiraku Kozuka
    • Hiraku Kozuka
    • C23C16/509C23C16/54H01L31/20
    • C23C16/5096C23C16/54Y10S438/908
    • A method for producing a non-monocrystalline semiconductor device, such as amorphous silicon TFT, by forming at least two non-monocrystalline semiconductor films in successive manner on a substrate by plasma CVD, in which the film-growing surface and the interfaces of the formed films are constantly maintained in a plasma atmosphere until the end of film formation. In this manner the interface regions are protected from damage caused by the initial stage of plasma and eventual deposition of impurities in such regions. This is achieved, for example, by spreading the plasma area during the transfer of the substrate between the film-forming chambers.
    • 通过等离子体CVD在衬底上以连续的方式形成至少两个非单晶半导体膜来制造非单晶半导体器件如非晶硅TFT的方法,其中膜生长表面和所形成的界面 薄膜经常保持在等离子体气氛中直到成膜结束。 以这种方式,保护界面区域免受由等离子体的初始阶段和最终在这些区域中沉积杂质造成的损害。 这通过例如在膜形成室之间的衬底传送期间扩展等离子体区域来实现。