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31. 发明授权

US4532137A 2-Thiazolamine derivatives, process for preparing same, and pharmaceutical compositions comprising same 失效
标题翻译： 2-噻唑胺衍生物，其制备方法和包含其的药物组合物
公开(公告)号：US4532137A
公开(公告)日：1985-07-30
申请号：US568826
申请日：1984-01-06
申请人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
发明人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
IPC分类号： A61K31/425 , A61K31/426 , A61P29/00 , A61P31/12 , A61P35/00 , A61P37/00 , C07D277/20 , C07D277/44 , C07D277/46 , C07D277/48
CPC分类号： C07D277/587
摘要： Disclosed are 2-thiazol derivatives having the general formula ##STR1## where R.sub.1 and R.sub.2 independently represent lower alkyl radicals having 1 to 4 carbon atoms and X represents a lower alkyl radical, a lower alkoxy radical, a lower alkoxycarbonyl radical, a halogenoalkoxy radical, a radical of the formula ##STR2## or a radical of the formula ##STR3## Also disclosed are a process for preparing the derivatives and pharmaceutical compositions having immunomodulatory activity which comprise the derivatives as the active ingredient.
摘要翻译：公开了具有通式的2-噻唑衍生物，其中R 1和R 2独立地表示具有1至4个碳原子的低级烷基，X表示低级烷基，低级烷氧基，低级烷氧基羰基，卤代烷氧基，还公开了具有式（IMAGE）的基团或式（ⅠA）的基团。还公开了制备具有免疫调节活性的衍生物和药物组合物的方法，其包含该衍生物作为活性成分。

32. 发明授权

US4501750A Thiazole compounds, a process for preparing same and a pharmaceutical composition containing the thiazole compounds 失效
标题翻译：噻唑化合物，其制备方法和含有噻唑化合物的药物组合物
公开(公告)号：US4501750A
公开(公告)日：1985-02-26
申请号：US420257
申请日：1982-09-13
申请人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
发明人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
IPC分类号： C07D277/46 , C07D277/54 , H02H3/33
CPC分类号： C07D277/46 , C07D277/54 , Y10S514/825
摘要： The present invention provides new thiazole compounds possessing immuno-modulating activity, i.e. thiazole compounds of the general formula (1): ##STR1## wherein R.sub.1 stands for a hydrogen or halogen atom or a lower alkyl, lower alkoxy, substituted or unsubstituted phenoxy, nitro or cyano group, R.sub.2 for a hydrogen atom or a lower alkyl or lower alkylthio group, and R for an .alpha.-halogenoalkyl group or the grouping: ##STR2## a process for preparing same and pharmaceutical compositions containing the thiazole compounds.More particularly, the present invention provides new thiazole compounds of the above general formula (1) which have immuno-modulating activity and are thus effective against immunodiseases such as chronic rheumatoid arthritis and also useful against viral diseases or for the immunotherapy of cancers, but show weak toxicity and are thus extremely desirous as medicines, a process for the preparation of the thiazole compounds and pharmaceutical compositions containing the thiazole compounds.
摘要翻译： PCT No.PCT / JP82 / 00012 Sec。 371日期1982年9月13日 102（e）1982年9月13日PCT申请日1982年1月13日PCT公布。公开号WO82 / 02383 1982年7月22日。本发明提供具有免疫调节活性的新的噻唑化合物，即通式（1）的噻唑化合物：其中R1代表氢或卤素原子或低级烷基，低级烷氧基，取代或未取代的苯氧基，硝基或氰基，R2表示氢原子或低级烷基或低级烷硫基，R表示α-卤代烷基或基团：其制备方法和药物含有噻唑化合物的组合物。更具体地，本发明提供了具有免疫调节活性的上述通式（1）的新的噻唑化合物，因此对抗免疫疾病如慢性类风湿性关节炎是有效的，并且也可用于抗病毒疾病或用于癌症的免疫治疗，但显示毒性弱，因此作为药物是非常希望的，制备噻唑化合物的方法和含有噻唑化合物的药物组合物。

33. 发明授权

US4376119A Benzothiazine derivative 失效
标题翻译：苯并噻嗪衍生物
公开(公告)号：US4376119A
公开(公告)日：1983-03-08
申请号：US274209
申请日：1981-06-16
申请人： Shoichiro Ozaki , Hideya Kobayashi , Haruki Mori , Hiroshi Kawazura , Yutaka Okazaki , Takafumi Kitano , Mikio Kumakura , Takuo Nakano
发明人： Shoichiro Ozaki , Hideya Kobayashi , Haruki Mori , Hiroshi Kawazura , Yutaka Okazaki , Takafumi Kitano , Mikio Kumakura , Takuo Nakano
IPC分类号： C07D417/12 , A61K31/54 , A61P29/00 , C07D213/73
CPC分类号： C07D213/73
摘要： N-(6-fluoro-2-pyridyl)-3,4-dihydro-2-methyl-4-oxo-2H-1,2-benzothiazine-3-carboxamide 1,1-dioxide that is a novel benzothiazine derivative. The compound is characterized by a low degree of toxicity and a low incidence of gastric disorders and useful as an anti-inflammatory agent.
摘要翻译：作为新的苯并噻嗪衍生物的N-（6-氟-2-吡啶基）-3,4-二氢-2-甲基-4-氧代-2H-1,2-苯并噻嗪-3-甲酰胺1,1-二氧化物。该化合物的特征在于毒性低，胃疾病发生率低，可用作抗炎剂。

34. 发明授权

US08740282B2 Vehicular sun visor 有权
标题翻译：车载遮阳板
公开(公告)号：US08740282B2
公开(公告)日：2014-06-03
申请号：US12216283
申请日：2008-07-02
申请人： Yutaka Okazaki
发明人： Yutaka Okazaki
IPC分类号： B60J3/02
CPC分类号： B60J3/0239 , B60J3/0252 , B60J3/0265
摘要： A coming-off preventing contacting piece 6 that extendingly projects in the radial direction of a shaft 3 throughout the entire periphery is formed in an insertion-side part 3a of the shaft 3 that turnably supports a sun visor body 1, and a contacted piece 7 with which the coming-off preventing contacting piece 6 contactingly engages is formed on the sun visor body 1 side to prevent the sun visor body 1 from coming off the shaft 3. Thereby, even if the sun visor body 1 receives a high expandingly deploying force of a curtain airbag, the concentrated load per unit area applied to the coming-off preventing contacting piece 6 is kept low, and therefore the coming-off preventing contacting piece 6 is restrained from being broken.
摘要翻译：在轴3的插入侧部分3a中形成有一个在轴3的径向方向延伸穿过整个周边的防脱接触件6，其可转动地支撑遮阳板体1，并且接触件7 防晒接触片6与遮阳板主体1接触地形成，从而防止遮阳板1从轴3脱落。因此，即使遮阳板体1受到高的展开力帘式气囊的每单位面积的集中负荷保持为低，因此防止脱落接触片6被破坏。

35. 发明授权

US08581309B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08581309B2
公开(公告)日：2013-11-12
申请号：US13277489
申请日：2011-10-20
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/092
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管和可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

36. 发明授权

US08044464B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044464B2
公开(公告)日：2011-10-25
申请号：US12209739
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/01
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管与可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

37. 发明授权

US08012812B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08012812B2
公开(公告)日：2011-09-06
申请号：US12174252
申请日：2008-07-16
申请人： Yutaka Okazaki
发明人： Yutaka Okazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1277 , H01L29/41733 , H01L29/78621 , H01L29/78648
摘要： A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107, an amorphous semiconductor film is formed over the bottom gate insulating film 103, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film over the bottom gate insulating film 103, a top gate insulating film 105 is formed over the crystalline semiconductor film, top gate electrodes 106a and 106b are formed over the top gate insulating film 105, the separation layer is separated from the insulating film 107, the insulating film 107 is processed to expose the bottom gate insulating film 103, and bottom gate electrodes 115a and 115b in contact with exposed the gate insulating film 103 are formed.
摘要翻译：在基板上形成分离层，在分离层上形成绝缘膜107，在绝缘膜107上形成底栅绝缘膜103，在栅极绝缘膜103的上方形成非晶半导体膜，半导体膜在底栅绝缘膜103上结晶化以形成晶体半导体膜，在晶体半导体膜上形成顶栅绝缘膜105，顶栅极电极106a和106b形成在顶栅绝缘膜105上，分离层与绝缘膜107分离，处理绝缘膜107以暴露底栅绝缘膜103，形成与露出的栅极绝缘膜103接触的底栅电极115a和115b。

38. 发明授权

US07982250B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07982250B2
公开(公告)日：2011-07-19
申请号：US12209696
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/12
CPC分类号： H01L21/8221 , H01L27/0688 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2924/00011 , H01L2924/00014 , H01L2224/29099 , H01L2224/13099 , H01L2224/80001
摘要： A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.
摘要翻译：示出了一种半导体器件，其中在具有绝缘表面的衬底上层叠多个场效应晶体管，层间绝缘层介于其间。多个场效应晶体管中的每一个具有半导体层，该半导体层通过包括将半导体层与半导体衬底分离并随后在衬底上结合的工艺制备。多个场效应晶体管中的每一个被覆盖有提供半导体层失真的绝缘膜。此外，将半导体层的与其晶面平行的晶轴设定为半导体层的沟道长度方向，能够制造具有SOI结构的高性能，低功耗的半导体器件。

39. 发明授权

US07212244B2 Focal plane shutter apparatus 有权
标题翻译：焦平面快门装置
公开(公告)号：US07212244B2
公开(公告)日：2007-05-01
申请号：US10280089
申请日：2002-10-25
申请人： Shuji Ichinose , Takao Ogawa , Yutaka Okazaki
发明人： Shuji Ichinose , Takao Ogawa , Yutaka Okazaki
IPC分类号： H04N5/238 , G03B9/40
CPC分类号： G03B9/40
摘要： A focal plane shutter apparatus is constructed by a light shielding blade, a fitting pin attached to the blade and an arm which is slidably engaged with the fitting pin to open or close the blade. A surface hardness of the fitting pin is higher than that of the arm. Concretely, the surface hardness of the arm is Hv300 to 600, and the surface hardness of the fitting pin is Hv450 to 1000. The arm and the fitting pin are subjected to chemical polishing treatment. Furthermore, the fitting pin is plated with nickel, chromium, palladium or rhodium. The fitting pin and arm have a substantially equal material hardness, or the material hardness of the fitting pin is higher. As the case may be, the fitting pin or arm may be plated with gold. Such an arrangement can suppress generation and accumulation of abrasion powder in the focal plane shutter apparatus assembled into a digital camera.
摘要翻译：焦平面快门装置由遮光叶片，安装在叶片上的装配销和与装配销可滑动地接合以打开或关闭叶片的臂构成。装配销的表面硬度高于手臂的表面硬度。具体地说，臂的表面硬度为Hv300〜600，配合销的表面硬度为Hv450〜1000。臂和配合销进行化学抛光处理。此外，配合销镀镍，铬，钯或铑。配合销和臂具有大致相同的材料硬度，或装配销的材料硬度较高。根据情况，配件销或臂可以镀金。这种布置可以抑制组装成数码相机的焦平面快门装置中磨损粉末的产生和积累。

40. 发明授权

US4490393A Thiazolylurea derivatives, a process for preparing same and a pharmaceutical composition containing same 失效
标题翻译：噻唑基脲衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US4490393A
公开(公告)日：1984-12-25
申请号：US420260
申请日：1982-09-17
申请人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Tamotsu Minami , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
发明人： Isao Sakano , Tatsuro Yokoyama , Seitaro Kajiya , Tamotsu Minami , Yutaka Okazaki , Hiroshi Tokuda , Hiroshi Kawazura , Mikio Kumakura , Takuo Nakano , Akira Awaya
IPC分类号： C07D277/20 , A61K31/425 , A61K31/426 , A61K31/44 , A61P29/00 , A61P31/12 , A61P35/00 , A61P37/00 , A61P37/04 , A61P37/08 , C07D277/48 , C07D277/54 , C07D417/12 , C07D277/46
CPC分类号： C07D417/12 , C07D277/48 , C07D277/54 , Y10S514/825
摘要： The present invention provides thiazolyl derivatives as new chemical substance represented by the general formula: ##STR1## wherein R.sup.1 stands for a lower alkyl group or a substituted or unsubstituted phenyl group, R.sup.2 for a hydrogen atom, a lower alkyl, lower alkoxy or lower alkylthio group, and R.sup.3 for a pyridyl or iso-oxazolyl group or a grouping of the general formula: ##STR2## processes for preparing same and pharmaceutical compositions containing the thiazolyl derivatives. More particularly, the present invention provides new thiazolyl derivatives which possess immuno-modulating activity and are thus therapeutically effective against immunodiseases such as chronic rheumatoid arthritis and also useful against viral diseases or for the immunotherapy of cancers and possess properties desirous as medicines with a slight toxicity, processes for preparing same and pharmaceutical compositions containing the new substance.
摘要翻译： PCT No.PCT / JP82 / 00021 Sec。 371日期1982年9月17日 102（e）1982年9月17日PCT申请日1982年1月21日PCT公布。公开号WO82 / 02553 日本1982年8月5日。本发明提供噻唑衍生物作为新化学物质，其通式如下：其中R1代表低级烷基或取代或未取代的苯基，R2表示氢原子，低级烷基，低级烷氧基或低级烷硫基，R3代表吡啶基或异恶唑基或下列通式的基团：其制备方法和含有噻唑衍生物的药物组合物。更具体地说，本发明提供了具有免疫调节活性的新的噻唑基衍生物，因此具有抗免疫性疾病如慢性类风湿性关节炎的治疗有效性，并且还可用于抗病毒疾病或癌症的免疫治疗，并具有希望作为具有轻微毒性的药物的性质，其制备方法和含有该新物质的药物组合物。

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