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    • 34. 发明授权
    • High speed virtual machine and compiler
    • 高速虚拟机和编译器
    • US06799315B2
    • 2004-09-28
    • US10403600
    • 2003-03-31
    • Hiroyuki WakiShinji InoueSatoru HayamaMitsuko FujitaAkira Ishikawa
    • Hiroyuki WakiShinji InoueSatoru HayamaMitsuko FujitaAkira Ishikawa
    • G06F945
    • G06F9/30156G06F9/30178G06F9/45516
    • A Just-In-Time compiler is provided for use with a virtual machine that executes a virtual machine instruction sequence under the control of a real machine. The compiler converts parts of the virtual machine instruction sequence into the real machine instruction sequence before execution and includes a block start information unit that determines whether the encoded block start information indicates a corresponding virtual machine instruction would correspond to the start of a basic block if the virtual machine instruction sequence was divided into basic blocks. A converting unit converts the virtual machine instructions into real machine instruction sequences and an outputting unit rearranges the real machine instruction sequences from the converting unit into basic blocks in accordance with the block start information. Additionally, the compiler can be enabled by a program stored on a computer readable recording medium.
    • 提供了即时编译器,用于在真机的控制下执行虚拟机指令序列的虚拟机。 编译器在执行之前将虚拟机指令序列的部分转换为实际机器指令序列,并且包括块开始信息单元,其确定编码块开始信息是否指示对应的虚拟机指令将对应于基本块的开始,如果 虚拟机指令序列分为基本块。 A转换单元将虚拟机指令转换为实际机器指令序列,并且输出单元根据块开始信息将来自转换单元的实际机器指令序列重新排列成基本块。 此外,可以通过存储在计算机可读记录介质上的程序启用编译器。
    • 35. 发明授权
    • Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
    • 用于监测抛光状态的方法和装置,抛光装置,工艺晶片,半导体器件以及制造半导体器件的方法
    • US06679756B2
    • 2004-01-20
    • US09914361
    • 2001-08-27
    • Akira IshikawaYoshijiro Ushio
    • Akira IshikawaYoshijiro Ushio
    • B24B4900
    • B24B37/013B24B49/12G01B11/06H01L21/30625H01L21/67253
    • Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective body, and the reflective body is pressed against the polishing pad with the same pressure as that applied during the polishing of the wafer. In this state, the reflective body is irradiated via the window with a probe light emitted from the light source, and the spectroscopic intensity of the reflected light is obtained from the sensor as a reference spectrum. During the polishing of the wafer, the spectroscopic intensity of the reflected light from the wafer is successively obtained as measured spectra from sensor; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer is monitored on the basis of this intensity ratio.
    • 在抛光晶片之前,具有与晶片相同的形状和尺寸的反射体被保持在抛光头而不是晶片上。 抛光剂插入在抛光头的窗口和反射体之间,并且反射体以与在晶片抛光期间施加的压力相同的压力压在抛光垫上。 在该状态下,利用从光源射出的探测光经由窗口对反射体进行照射,从传感器得到反射光的分光强度作为参照光谱。 在晶片的研磨过程中,从传感器测得的光谱依次获得来自晶片的反射光的光谱强度; 确定这些测量光谱与上述参考光谱的强度比,并且基于该强度比来监测晶片的抛光状态。