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    • 31. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07877068B2
    • 2011-01-25
    • US12003354
    • 2007-12-21
    • Tomoaki AtsumiHidetomo Kobayashi
    • Tomoaki AtsumiHidetomo Kobayashi
    • H04B1/16
    • G06K19/0723G06K19/0702G06K19/07786H04B5/0062
    • A demodulation signal is generated by provision of a demodulation signal generation circuit to the semiconductor device capable of wireless communication and by obtainment of a difference between voltages having opposite polarities by the demodulation signal generation circuit. Alternatively, a plurality of demodulation signal generation circuits and a selective circuit which selects a demodulation signal generation circuit depending on characteristics of a received signal are provided, where operation of a second demodulation signal generation circuit stops when a first demodulation signal generation circuit is operated. The selective circuit includes an inverter circuit, a flip-flop circuit, and a selector circuit. When the second demodulation signal generation circuit has a comparator and the like, power consumption thereof is reduced.
    • 通过向能够进行无线通信的半导体装置提供解调信号生成电路,并且通过解调信号生成电路获得具有相反极性的电压之间的差异来生成解调信号。 或者,提供多个解调信号生成电路和根据接收信号的特性来选择解调信号生成电路的选择电路,其中当第一解调信号产生电路被操作时第二解调信号产生电路的操作停止。 选择电路包括反相器电路,触发器电路和选择器电路。 当第二解调信号发生电路具有比较器等时,其功耗降低。
    • 32. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07688272B2
    • 2010-03-30
    • US11437818
    • 2006-05-22
    • Hidetomo Kobayashi
    • Hidetomo Kobayashi
    • H01Q21/20H01Q1/38
    • H01L27/1255H01L27/1214H01L27/13H01L28/10H01Q1/2225
    • An object is to provide a semiconductor device having an antenna structure which is advantageous for miniaturization, without changing the number of steps and communication distance. One feature to achieve the above object is a semiconductor device including a substrate, a tag portion including a thin film element formed over the substrate, a first antenna, and a second antenna, in which the first antenna and the second antenna are formed in different layers separated by an insulating film, the first antenna and the second antenna are partially electrically connected to each other, the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element, and the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element.
    • 本发明的目的是提供一种具有天线结构的半导体器件,其有利于小型化,而不改变台阶数和通信距离。 实现上述目的的一个特征是包括基板,包括形成在基板上的薄膜元件的标签部分,第一天线和第二天线的半导体器件,其中第一天线和第二天线形成为不同的 由绝缘膜隔开的层,第一天线和第二天线部分地彼此电连接,第一天线由与薄膜元件连接的源极或漏极布线相同的材料形成,并且与相同的层形成,并且 第二天线形成在与连接到薄膜元件的源极或漏极布线不同的层中。
    • 33. 发明申请
    • Semiconductor device and wireless communication system
    • 半导体器件和无线通信系统
    • US20070036237A1
    • 2007-02-15
    • US11498808
    • 2006-08-04
    • Hidetomo KobayashiTomoaki Atsumi
    • Hidetomo KobayashiTomoaki Atsumi
    • H03C5/00
    • H04L27/0008G06K19/0723H04B5/0056H04L27/04H04L27/12
    • The present invention provides a structure in which an amplitude-modulation mode and a frequency-modulation mode are switched. A semiconductor device of the invention has: a reset control circuit to which a modulation mode select signal which selects an amplitude-modulation mode or a frequency-modulation mode and Manchester-encoded information are input, which outputs a first reset signal and a second reset signal; a first frequency-dividing circuit to which a carrier wave is input, which outputs a sub-carrier wave responding to the amplitude-modulation mode or a frequency-modulation signal responding to the frequency-modulation mode, according to the first reset signal; a second frequency-dividing circuit which outputs a basic clock of which a duty ratio is different between the amplitude-modulation mode and the frequency-modulation mode, according to the second reset signal and an output of the first frequency-dividing circuit; and an ASK/FSK switching portion to which an output from the first frequency-dividing circuit and Manchester-encoded information are input, which outputs an amplitude-modulation signal or a frequency-modulation signal according to the modulation mode select signal.
    • 本发明提供一种其中调制模式和调频模式被切换的结构。 本发明的半导体器件具有:复位控制电路,输入选择幅度调制模式或调频模式的调制模式选择信号和曼彻斯特编码信息,其输出第一复位信号和第二复位 信号; 输入载波的第一分频电路,根据第一复位信号输出响应于调幅模式的副载波或响应于调频模式的频率调制信号; 第二分频电路,根据第二复位信号和第一分频电路的输出,输出调幅方式和调幅方式之间的占空比不同的基本时钟; 以及输入来自第一分频电路和曼彻斯特编码信息的输出的ASK / FSK切换部分,其根据调制模式选择信号输出幅度调制信号或调频信号。
    • 34. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060267138A1
    • 2006-11-30
    • US11437818
    • 2006-05-22
    • Hidetomo Kobayashi
    • Hidetomo Kobayashi
    • H01L29/00
    • H01L27/1255H01L27/1214H01L27/13H01L28/10H01Q1/2225
    • An object is to provide a semiconductor device having an antenna structure which is advantageous for miniaturization, without changing the number of steps and communication distance. One feature to achieve the above object is a semiconductor device including a substrate, a tag portion including a thin film element formed over the substrate, a first antenna, and a second antenna, in which the first antenna and the second antenna are formed in different layers separated by an insulating film, the first antenna and the second antenna are partially electrically connected to each other, the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element, and the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element.
    • 本发明的目的是提供一种具有天线结构的半导体器件,其有利于小型化,而不改变台阶数和通信距离。 实现上述目的的一个特征是包括基板,包括形成在基板上的薄膜元件的标签部分,第一天线和第二天线的半导体器件,其中第一天线和第二天线形成为不同的 由绝缘膜隔开的层,第一天线和第二天线部分地彼此电连接,第一天线由与薄膜元件连接的源极或漏极布线相同的材料形成,并且与相同的层形成,并且 第二天线形成在与连接到薄膜元件的源极或漏极布线不同的层中。
    • 39. 发明申请
    • SIGNAL PROCESSING CIRCUIT
    • 信号处理电路
    • US20120294069A1
    • 2012-11-22
    • US13473706
    • 2012-05-17
    • Takuro OhmaruHidetomo Kobayashi
    • Takuro OhmaruHidetomo Kobayashi
    • G11C11/24G11C7/10
    • H01L27/115G11C11/413H01L27/1052H01L27/108H01L27/1203H01L27/1225
    • A signal processing circuit includes a memory and a control portion configured to control the memory. The control portion includes a volatile memory circuit including data latch terminals, a first non-volatile memory circuit electrically connected to one of the data latch terminals, a second non-volatile memory circuit electrically connected to the other of the data latch terminals, and a precharge circuit having a function of supplying a potential that is a half of a high power supply potential to the one and the other of the data latch terminals. Each of the first non-volatile memory circuit and the second non-volatile memory circuit includes a transistor having a channel formation region including an oxide semiconductor and a capacitor connected to a node that is brought into a floating state by turning off the transistor.
    • 信号处理电路包括存储器和被配置为控制存储器的控制部分。 控制部分包括易失性存储器电路,其包括数据锁存端子,电连接到数据锁存端子之一的第一非易失性存储器电路,电连接到数据锁存端子中的另一个的第二非易失性存储器电路,以及 预充电电路具有向数据锁存端子中的另一个提供高电源电位的一半的电位的功能。 第一非易失性存储器电路和第二非易失性存储器电路中的每一个包括晶体管,其具有包括氧化物半导体的沟道形成区域和连接到通过截止晶体管而处于浮置状态的节点的电容器。