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31. 发明申请

US20070091952A1 Semiconductor laser apparatus and fabrication method of the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20070091952A1
公开(公告)日：2007-04-26
申请号：US11338739
申请日：2006-01-25
申请人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
发明人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2924/19107 , H01S5/02212 , H01S5/02272 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01L2924/00014
摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要翻译：提供半导体激光装置。半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。

32. 发明申请

US20050180688A1 Optical transmission device that employs vertical cavity surface-emitting laser diode as light source 失效
标题翻译：采用垂直腔表面发射激光二极管作为光源的光传输装置
公开(公告)号：US20050180688A1
公开(公告)日：2005-08-18
申请号：US11041442
申请日：2005-01-25
申请人： Osamu Ueno , Masao Funada , Masaaki Miura , Tsutomu Hamada , Shinya Kyozuka , Osamu Takanashi , Hideo Nakayama , Jun Sakurai , Akira Sakamoto
发明人： Osamu Ueno , Masao Funada , Masaaki Miura , Tsutomu Hamada , Shinya Kyozuka , Osamu Takanashi , Hideo Nakayama , Jun Sakurai , Akira Sakamoto
IPC分类号： G02B6/26 , G02B6/42 , H01S5/022 , H01S5/183
CPC分类号： G02B6/4206 , G02B6/4202 , G02B6/4292
摘要： The first and second light-emitting regions are provided on the light source. When the first optical fiber having the first core diameter is connected, the light emitted from the first light-emitting region enters the first core. When the second optical fiber having a greater core diameter than the first core diameter is connected, the lights emitted from the first and second light-emitting regions enter the second core. It is thus possible to connect the optical transmission device with multiple optical fibers having different core diameters. It is thus possible to provide the optical transmission device and the communication device, which are low in cost and high in convenience.
摘要翻译：第一发光区域和第二发光区域设置在光源上。当连接具有第一纤芯直径的第一光纤时，从第一发光区域发射的光线进入第一芯体。当连接具有比第一纤芯直径更大的芯径的第二光纤时，从第一和第二发光区域发射的光进入第二芯。因此，可以将光传输装置与具有不同芯径的多根光纤连接。因此，可以提供成本低，便利性高的光传输装置和通信装置。

33. 发明授权

US5880766A Apparatus for correcting positional deviation of light source emitting light beams in image recording apparatus 失效
标题翻译：用于校正图像记录装置中的光源发射光束的位置偏差的装置
公开(公告)号：US5880766A
公开(公告)日：1999-03-09
申请号：US751674
申请日：1996-11-18
申请人： Akemi Murakami , Kaoru Yasukawa , Hideo Nakayama , Hideki Fukunaga , Nobuaki Ueki , Hiromi Otoma , Yasuji Seko , Mario Fuse
发明人： Akemi Murakami , Kaoru Yasukawa , Hideo Nakayama , Hideki Fukunaga , Nobuaki Ueki , Hiromi Otoma , Yasuji Seko , Mario Fuse
IPC分类号： B41J2/44 , G06K15/12 , H04N1/04 , H04N1/047 , H04N1/12 , H04N1/193 , G03G15/04
CPC分类号： H04N1/047 , G06K15/1238 , H04N1/1932 , H04N1/12 , H04N1/193 , H04N2201/046 , H04N2201/04729 , H04N2201/04755
摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.
摘要翻译：公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化由外部振动，温度变化等引起的物理失真。通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

34. 发明授权

US5394425A Method of manufacturing a semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US5394425A
公开(公告)日：1995-02-28
申请号：US201342
申请日：1994-02-24
申请人： Hideki Fukunaga , Nobuaki Ueki , Hiromi Otoma , Hideo Nakayama
发明人： Hideki Fukunaga , Nobuaki Ueki , Hiromi Otoma , Hideo Nakayama
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/22 , H01S5/20 , H01S5/2059 , H01S5/2226 , H01S5/223
摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.
摘要翻译：该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜，杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

35. 发明授权

US5330913A Method of disrupting the chlorella cell wall by cell rupture 失效
标题翻译：通过细胞破裂破坏小球藻细胞壁的方法
公开(公告)号：US5330913A
公开(公告)日：1994-07-19
申请号：US939264
申请日：1992-09-02
申请人： Hideo Nakayama
发明人： Hideo Nakayama
IPC分类号： C12M1/33 , C12N1/06 , C12N1/12
CPC分类号： C12N1/06 , C12M47/06 , Y10S435/803
摘要： The CHLORELLA cell wall is disrupted by forming partially high- and low-pressure portions at high density in an aqueous suspension of CHLORELLA cells, instantaneously shifting the CHLORELLA cells in the aqueous suspension from a high-pressure state to a low-pressure state by interaction of the movement, dissipation and growth of these high- and low-pressure portions and the flowing of the aqueous suspension, and rupturing the CHLORELLA cells by their rapid expansion upon the shift.
摘要翻译：通过在CHLORELLA细胞的水性悬浮液中以高密度形成部分高压和低压部分来CHLORELLA细胞壁被破坏，通过相互作用瞬时将水悬浮液中的CHLORELLA细胞从高压状态移动到低压状态这些高压部分和低压部分的运动，耗散和生长以及水性悬浮液的流动，并且通过它们在移动时的快速膨胀来破坏CHLORELLA细胞。

36. 发明授权

US4981115A Intake system for V-type engine 失效
标题翻译： V型发动机进气系统
公开(公告)号：US4981115A
公开(公告)日：1991-01-01
申请号：US386587
申请日：1989-07-31
申请人： Yasuhiro Okasako , Fusatoshi Tanaka , Hideo Nakayama , Takashige Ishikawa , Kazumi Okamura , Hiroyuki Matsumoto , Tsuyoshi Tsuchida
发明人： Yasuhiro Okasako , Fusatoshi Tanaka , Hideo Nakayama , Takashige Ishikawa , Kazumi Okamura , Hiroyuki Matsumoto , Tsuyoshi Tsuchida
IPC分类号： F02B27/02 , F02B75/18 , F02B75/22 , F02M35/10 , F02M35/116
CPC分类号： F02M35/10354 , F02B27/005 , F02B27/021 , F02B27/0242 , F02B27/0252 , F02B27/0273 , F02M35/10032 , F02M35/10045 , F02M35/10072 , F02M35/10124 , F02M35/10131 , F02M35/10216 , F02M35/10222 , F02M35/10268 , F02M35/116 , F02M35/161 , F02B2075/1824 , F02B2275/18 , F02B75/22 , F02F2200/06 , F05C2225/08 , Y02T10/146
摘要： Each cylinder bank of a V-type engine is provided with a plurality of cylinders which are not in sequence in firing order. A collecting intake passage is connected to each of the cylinders of both banks by way of independent intake passages which pass between the two banks and have the same effective channel length, and each of the independent intake passages is arranged so that it extends substantially perpendicularly and upwardly from a cylinder. Both collecting intake passages are arranged above one of the cylinder banks, and the collecting intake passage which is connected to a cylinder of the other cylinder bank is arranged on the independent intake passages connected to the other collecting intake passage. By doing so, overlapping of both collecting intake passages can be avoided and thus the height of the intake system can be reduced. The independent intake passages and the collecting intake passage which overlaps the former have a common wall. In one embodiment, each of the collecting intake passages is formed integrally with a high speed intake passage and a low speed intake passage. The vertical positions of the high speed intake passages for each bank are varied. The high speed rear side intake passage is connected to the underside of the low speed rear side intake passage. The low speed and high speed front side intake passages are connected to each other by way of a common side wall.

37. 发明授权

US08759859B2 Light-emitting element, self-scanning light-emitting element array, optical writing head, and image forming apparatus 有权
标题翻译：发光元件，自扫描发光元件阵列，光学写入头和图像形成装置
公开(公告)号：US08759859B2
公开(公告)日：2014-06-24
申请号：US13562673
申请日：2012-07-31
申请人： Taku Kinoshita , Kazutaka Takeda , Takashi Kondo , Hideo Nakayama
发明人： Taku Kinoshita , Kazutaka Takeda , Takashi Kondo , Hideo Nakayama
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0016 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/30
摘要： Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.
摘要翻译：公开了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管，具有pnpn结构，以及形成在岛状结构中并具有pnpn结构的移位晶闸管，其中具有使得沟槽部分至少达到电流限制层的深度的沟槽部分形成在所述移位晶闸管的形成区域岛结构和发光晶闸管的形成区域，以及从岛状结构的侧面选择性地氧化的氧化区域和沟槽部分的侧面形成在电流限制层中。

38. 发明授权

US08368972B2 Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission apparatus, and information processing apparatus 有权
标题翻译：表面发射半导体激光器，表面发射半导体激光装置，光传输装置和信息处理装置
公开(公告)号：US08368972B2
公开(公告)日：2013-02-05
申请号：US13190022
申请日：2011-07-25
申请人： Kazutaka Takeda , Hideo Nakayama
发明人： Kazutaka Takeda , Hideo Nakayama
IPC分类号： H04N1/04 , H04N1/46
CPC分类号： H01S5/18311 , H01S5/02212 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18355 , H01S5/18386
摘要： A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered reflector of a second conductivity type, a columnar structure, a current-confining layer including a conductive area surrounded with an oxidized area, a first electrode defining a light-emitting window, a first dielectric film covering the light-emitting window, and a second dielectric film formed on the first dielectric film. The second dielectric film has an asymmetrical shape having a long axis and a short axis, the second dielectric film is located at a position overlapping with the conductive area, the second refractive index n2 is greater than the first refractive index n1, the thickness of the first dielectric film is an odd multiple of λ/4·n1 (λ: oscillation wavelength), and the thickness of the second dielectric film is an odd multiple of λ/4·n2.
摘要翻译：表面发射半导体激光器包括基板，第一导电类型的第一半导体多层反射器，有源区，第二导电类型的第二半导体多层反射器，柱状结构，电流限制层，包括由氧化区域包围的导电区域，限定发光窗口的第一电极，覆盖发光窗口的第一电介质膜和形成在第一电介质膜上的第二电介质膜。第二电介质膜具有长轴和短轴的不对称形状，第二电介质膜位于与导电区重叠的位置，第二折射率n2大于第一折射率n1，第一电介质膜是λ/ 4·n1（λ：振荡波长）的奇数倍，第二电介质膜的厚度为λ/ 4·n2的奇数倍。

39. 发明授权

US08274589B2 DA converter, solid-state imaging device, and camera system 有权
标题翻译： DA转换器，固态成像装置和相机系统
公开(公告)号：US08274589B2
公开(公告)日：2012-09-25
申请号：US12662073
申请日：2010-03-30
申请人： Hideo Nakayama
发明人： Hideo Nakayama
IPC分类号： H04N3/14 , H04N5/335 , H04N5/235 , H04N5/228
CPC分类号： H04N5/378 , H03M1/06 , H03M1/742 , H04N5/374
摘要： A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction current to flow to the reference potential.
摘要翻译： DA转换器包括：模拟信号输出部分，响应于提供的用于调节增益的增益控制信号，根据数字输入信号的值产生输出电流和非输出电流，并且输出由输出电流的电流 - 电压转换，并使非输出电流流向参考电位; 增益控制信号产生部分，根据数字增益控制信号的值产生增益电流和非选择电流，并通过电流 - 电压转换增益电流产生增益控制信号，并将增益控制信号到模拟信号输出部分; 以及校正电流产生部，其基于所述增益控制信号生成部的非选择电流生成补偿电流，所述校正电流补充由于所述增益控制信号生成部中的增益设定的变化引起的电流变动量，导致校正电流流向参考电位。

40. 发明授权

US07700955B2 Semiconductor device and optical apparatus 有权
标题翻译：半导体装置及光学装置
公开(公告)号：US07700955B2
公开(公告)日：2010-04-20
申请号：US11982930
申请日：2007-11-06
申请人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
发明人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
IPC分类号： H01L29/26 , H01L27/15 , H01L29/267 , G02B6/26 , G02B6/36 , H01S5/00 , H01S3/20 , H01S3/08
CPC分类号： H01L27/15 , H01L31/173 , H01L33/38
摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
摘要翻译：半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。光学功能部分执行发光或光接收。半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。

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