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31. 发明申请

US20110201162A1 AMORPHOUS OXIDE AND THIN FILM TRANSISTOR 有权
标题翻译：无定形氧化物和薄膜晶体管
公开(公告)号：US20110201162A1
公开(公告)日：2011-08-18
申请号：US13097572
申请日：2011-04-29
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
摘要翻译：本发明涉及一种使用该无定形氧化物的无定形氧化物和薄膜晶体管。特别地，本发明提供了电子载流子浓度小于1018 / cm3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，使用电子载流子浓度小于1018 / cm3的非晶氧化物通道层2。

32. 发明申请

US20110111965A1 LAYERED COMPOUND, SUPERCONDUCTOR AND METHOD FOR PRODUCING SAME 有权
标题翻译：层状化合物，超级电容器及其制造方法
公开(公告)号：US20110111965A1
公开(公告)日：2011-05-12
申请号：US13003149
申请日：2009-07-09
申请人： Hideo Hosono , Hiroshi Yanagi , Toshio Kamiya , Satoru Matsuishi , Sungwng Kim , Seok Gyu Yoon , Hidenori Hiramatsu , Masahiro Hirano , Takatoshi Nomura , Yoichi Kamihara
发明人： Hideo Hosono , Hiroshi Yanagi , Toshio Kamiya , Satoru Matsuishi , Sungwng Kim , Seok Gyu Yoon , Hidenori Hiramatsu , Masahiro Hirano , Takatoshi Nomura , Yoichi Kamihara
IPC分类号： H01L39/24 , H01L39/00 , B22F3/10 , C01B33/10 , C09K3/00
CPC分类号： C01G49/009 , C01G53/006 , C01G55/002 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2002/76 , C01P2002/77 , C01P2002/78 , C01P2004/61 , C01P2004/80 , C01P2006/40 , C01P2006/42 , C04B35/515 , C04B35/5154 , C04B35/553 , C04B2235/3208 , C04B2235/3213 , C04B2235/40 , C04B2235/401 , C04B2235/405 , C04B2235/445 , C04B2235/446 , C04B2235/5436 , C04B2235/6581 , C04B2235/76 , H01L39/125
摘要： Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor.Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
摘要翻译：提供新的非氧化物系复合材料超导体作为钙钛矿型铜氧化物超导体的替代品。由化学式AF（TM）Pn表示的分层化合物（其中，A是选自长型周期表中的第二族元素的F中的至少一种，F是氟离子，TM是至少一种选择的由一组由Fe，Ru，Os，Ni，Pd和Pt组成的过渡金属元素，Pn是选自由长型周期表中的第十五族系元素组成的组中的至少一种），具有晶体结构的ZrCuSiAs型（空间群P4 / nmm），通过掺杂三价阳离子或二价阴离子成为超导体。

33. 发明申请

US20110101352A1 AMORPHOUS OXIDE AND THIN FILM TRANSISTOR 有权
公开(公告)号：US20110101352A1
公开(公告)日：2011-05-05
申请号：US12984960
申请日：2011-01-05
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

34. 发明申请

US20110002832A1 SUPERCONDUCTING COMPOUND AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：超级化合物及其制造方法
公开(公告)号：US20110002832A1
公开(公告)日：2011-01-06
申请号：US12865940
申请日：2009-02-17
申请人： Hideo Hosono , Yoichi Kamihara , Masahiro Hirano , Toshio Kamiya , Hiroshi Yanagi
发明人： Hideo Hosono , Yoichi Kamihara , Masahiro Hirano , Toshio Kamiya , Hiroshi Yanagi
IPC分类号： C01F17/00
CPC分类号： C01G53/006 , C01G49/009 , C01G55/002 , C01P2002/52 , C01P2002/72 , C01P2002/76 , C01P2002/78 , C01P2002/88 , C01P2006/40 , C01P2006/42 , C04B35/447 , C04B2235/3208 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3279 , C04B2235/40 , C04B2235/405 , C04B2235/42 , C04B2235/445 , H01L39/125
摘要： Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F−, Cl− or Br−). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+). The Tc of the superconducting compound is controlled in accordance with the ion substitution amount.
摘要翻译：公开了一种超导化合物，其具有通过部分取代由以下化学式表示的化合物的氧离子而获得的结构; LnTMOPh [其中Ln表示选自Y和稀土金属元素（La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu）中的至少一种元素，TM表示选自过渡金属元素（Fe，Ru，Os，Ni，Pd和Pt）中的至少一种元素，Pn表示选自铌元素（N，P，As和Sb）中的至少一种元素]，并且具有ZrCuSiAs型晶体结构（空间群P4 / nmm），具有至少一种一价阴离子（F-，Cl-或Br-）。超导化合物或者具有通过用至少一种四价金属离子（Ti 4+，Zr 4+，Hf 4+，C 4+，Si 4+，Ge 4+，Sn 4+或Pb 4+）部分取代化合物的Ln离子或通过部分取代Ln而获得的结构而获得的结构化合物与至少一种二价金属离子（Mg2 +，Ca2 +，Sr2 +或Ba2 +）的离子。超导化合物的Tc根据离子取代量进行控制。

35. 发明申请

US20090240085A1 METHOD OF PRODUCING DIOL, POLYDIOL, SECONDARY ALCOHOL OR DIKETONE COMPOUND 有权
标题翻译：制备二醇，多异氰酸酯，仲醇或二酮化合物的方法
公开(公告)号：US20090240085A1
公开(公告)日：2009-09-24
申请号：US12441780
申请日：2007-09-28
申请人： Hideo Hosono , Haritha Buchammagari , Yoshitake Toda , Masahiro Hirano , Kohtaro Osakada , Daisuke Takeuchi
发明人： Hideo Hosono , Haritha Buchammagari , Yoshitake Toda , Masahiro Hirano , Kohtaro Osakada , Daisuke Takeuchi
IPC分类号： C07C45/00 , C07C31/18 , C07C29/16
CPC分类号： C07C45/72 , C07B41/02 , C07C29/143 , C07C29/38 , C07C41/26 , C07C41/30 , C07C45/73 , C07C46/00 , C07C253/30 , C07C31/22 , C07C31/42 , C07C31/20 , C07C49/83 , C07C49/835 , C07C50/20 , C07C255/53 , C07C43/23
摘要： The invention is a process of using, as a reducing agent, a 12CaO.7Al2O3 electride containing electrons in a number of 1019 or more and 2.3×1021 cm−3 or less in its cages to subject a carbonyl compound to reductive coupling in a solvent, thereby synthesizing a diol or polydiol. The invention is also a process of reducing a ketone compound in a solvent, thereby synthesizing a secondary alcohol or diketone compound. According to the process of the invention, it is possible to synthesize a diol or polydiol, or a secondary alcohol or diketone compound through simple operations in a short period without using an expensive and harmful metal hydride or metal salt nor limiting the atmosphere for the synthesis to an inert gas atmosphere as in conventional processes.
摘要翻译：本发明是在其笼中使用含有1019以上且2.3×10 21 cm -3以下的电子的12CaO·7Al 2 O 3电极作为还原剂的方法，以使羰基化合物在溶剂中进行还原偶联，从而合成二醇或聚二醇。本发明也是在溶剂中还原酮化合物的方法，从而合成仲醇或二酮化合物。根据本发明的方法，可以在短时间内通过简单的操作合成二醇或多元醇或仲醇或二酮化合物，而不使用昂贵且有害的金属氢化物或金属盐，也不限制合成气氛到惰性气体气氛中，如常规方法。

36. 发明申请

US20050176572A1 Synthetic quartz glass 审中-公开
标题翻译：合成石英玻璃
公开(公告)号：US20050176572A1
公开(公告)日：2005-08-11
申请号：US10509029
申请日：2003-03-26
申请人： Hideo Hosono , Kouichi Kajihara , Masahiro Hirano , Yoshiaki Ikuta , Shinya Kikukawa
发明人： Hideo Hosono , Kouichi Kajihara , Masahiro Hirano , Yoshiaki Ikuta , Shinya Kikukawa
IPC分类号： C03B20/00 , C03B8/04 , C03B19/14 , C03C3/06 , C03C23/00 , G02B1/02 , G03F7/20
CPC分类号： G03F7/70958 , C03B19/1453 , C03B2201/04 , C03B2201/075 , C03B2201/21 , C03C3/06 , C03C23/0025 , C03C2201/21 , C03C2203/40 , C03C2203/50 , G02B1/02 , Y02P40/57
摘要： Disclosed is a synthetic silica glass for use with light having a wavelength of 150 to 200 nm, which has an OH group at a concentration of less than 1 ppm, an oxygen-excess type defect at a concentration of 1×1016 defects/cm3 or less, a hydrogen molecule at a concentration of less than 1×1017 molecules/cm3, and a non-bridging oxygen radical at a concentration of 1×1016 radicals/cm3 or less in the state after the synthetic silica glass is irradiated with light of a xenon excimer lamp having an energy density of 10 mW/cm2 and 3 kJ/cm2 or with light of an F2 laser by 107 pulses at an energy density of 10 mJ/cm2/pulse. The synthetic silica glass can exhibit excellent resistance to ultraviolet light with a wavelength of 150 to 190 nm when incorporated in a device using ultraviolet light with a wavelength of 150 to 190 nm as a light source.
摘要翻译：公开了一种合成石英玻璃，其用于波长为150至200nm的光，其具有浓度小于1ppm的OH基，浓度为1×10 16的氧过量型缺陷， SUP>缺陷/ cm 3以下，浓度小于1×10 17分子/ cm 3的氢分子，在合成石英玻璃用具有能量密度的氙准分子灯的光照射之后的状态下，以1×10 16个/ cm 3以下的浓度桥接氧自由基 10mW / cm 2和3kJ / cm 2的光，或者具有10 2激光的光的10 / >脉冲，能量密度为10mJ / cm 2 /脉冲。合成石英玻璃当掺入使用波长为150〜190nm的紫外光的装置中作为光源时，可以表现出优异的抗紫外线，波长为150〜190nm。

37. 发明授权

US07428085B2 Method for producing hologram by pico-second laser 失效
标题翻译：通过微秒级激光产生全息图的方法
公开(公告)号：US07428085B2
公开(公告)日：2008-09-23
申请号：US10504634
申请日：2003-02-13
申请人： Hideo Hosono , Masahiro Hirano , Kenichi Kawamura , Taisuke Miura , Hayato Kamioka
发明人： Hideo Hosono , Masahiro Hirano , Kenichi Kawamura , Taisuke Miura , Hayato Kamioka
IPC分类号： G03H1/02
CPC分类号： G02B5/1857 , G02B17/023 , G03H1/0244 , G03H1/04 , G03H2001/0413 , G03H2001/0415 , G03H2001/0482 , G03H2001/0484 , G03H2001/0491 , G03H2222/33 , G03H2223/26 , G03H2240/24 , G03H2260/62 , G03H2270/13 , G03H2270/52
摘要： Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (τ) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 μJ/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner. The present invention can solve a problem with a conventional process of recording a hologram in a non-photosensitive material in an irreversible manner using interfering femtosecond laser pulses, specifically, distortion in the waveforms of pulsed laser beams and resulting instability in recording of an embedded hologram due to a non-linear optical interaction between the femtosecond laser pulses and air/the material.
摘要翻译：公开了一种通过双光束激光干涉曝光工艺制造全息图的方法，其包括发射脉冲宽度（τ）范围从大于900飞秒到100皮秒的相干激光，激光功率为10μJ/脉冲或更多，使用固态激光器作为光源，将来自激光器的光脉冲分成两束光束，以这样的方式控制两个光束，使得两个光束会聚在工件的表面上或内部，以便记录全息图，同时在时间上和空间上彼此相互匹配两个光束的各个会聚点，以在它们之间产生干涉，以便以不可逆的方式在工件表面或工件内的嵌入全息图中记录表面浮雕全息图。本发明可以解决使用干涉飞秒激光脉冲以不可逆方式记录全息图的常规方法的问题，特别是脉冲激光束的波形失真以及嵌入式全息图记录中的不稳定性由于飞秒激光脉冲和空气/材料之间的非线性光学相互作用。

38. 发明申请

US20060019171A1 Method for producing hologram by pico-second laser 失效
标题翻译：通过微秒级激光产生全息图的方法
公开(公告)号：US20060019171A1
公开(公告)日：2006-01-26
申请号：US10504634
申请日：2003-02-13
申请人： Hideo Hosono , Masahiro Hirano , Kenichi Kawamura , Taisuke Miura , Hayato Kamioka
发明人： Hideo Hosono , Masahiro Hirano , Kenichi Kawamura , Taisuke Miura , Hayato Kamioka
IPC分类号： G03H1/04
CPC分类号： G02B5/1857 , G02B17/023 , G03H1/0244 , G03H1/04 , G03H2001/0413 , G03H2001/0415 , G03H2001/0482 , G03H2001/0484 , G03H2001/0491 , G03H2222/33 , G03H2223/26 , G03H2240/24 , G03H2260/62 , G03H2270/13 , G03H2270/52
摘要： Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (τ) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 μJ/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner. The present invention can solve a problem with a conventional process of recording a hologram in a non-photosensitive material in an irreversible manner using interfering femtosecond laser pulses, specifically, distortion in the waveforms of pulsed laser beams and resulting instability in recording of an embedded hologram due to a non-linear optical interaction between the femtosecond laser pulses and air/the material.
摘要翻译：公开了一种通过双光束激光干涉曝光工艺制造全息图的方法，其包括发射脉冲宽度（τ）范围从大于900飞秒至100皮秒的相干激光，激光功率为10μJ/脉冲或更多，使用固态激光器作为光源，将来自激光器的光脉冲分成两束光束，以这样的方式控制两个光束，使得两个光束会聚在工件的表面上或内部，以便记录全息图，同时在时间上和空间上彼此相互匹配两个光束的各个会聚点，以在它们之间产生干涉，以便以不可逆的方式在工件表面或工件内的嵌入全息图中记录表面浮雕全息图。本发明可以解决使用干涉飞秒激光脉冲以不可逆方式记录全息图的常规方法的问题，特别是脉冲激光束的波形失真以及嵌入式全息图记录中的不稳定性由于飞秒激光脉冲和空气/材料之间的非线性光学相互作用。

39. 发明申请

US20050158993A1 Lncuo(s,se,te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film 有权
标题翻译： Lncuo（s，se，te）单晶薄膜，其制造方法以及使用单晶薄膜的光学器件或电子器件
公开(公告)号：US20050158993A1
公开(公告)日：2005-07-21
申请号：US10505219
申请日：2003-02-19
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Masahiro Orita , Hidenori Hiramatsu , Kazushige Ueda
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Masahiro Orita , Hidenori Hiramatsu , Kazushige Ueda
IPC分类号： C30B29/22 , C09K11/00 , C09K11/08 , C09K11/84 , C09K11/88 , C30B23/02 , C30B33/00 , C30B33/02 , H01L21/205 , H01L21/363 , H01L21/365 , H01L29/24 , H01L33/26 , H01L21/44
CPC分类号： C30B33/00 , C30B1/02 , C30B23/02 , C30B29/22 , H01L21/0242 , H01L21/02439 , H01L21/02483 , H01L21/02485 , H01L21/02491 , H01L21/02565 , H01L21/02568 , H01L21/02631 , H01L29/24 , H01L33/26
摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor Teasers, filed-effect transistors, or a hetero-bipolar transistors.
摘要翻译：公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种），其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火。或者更多。虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发光效率和电子迁移率的多晶物质或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体薄片，场效应晶体管或异质双极晶体管的建筑物黑色。

40. 发明申请

US20050039670A1 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film 有权
标题翻译：天然超晶格同源单晶薄膜，其制备方法和使用所述单晶薄膜的器件
公开(公告)号：US20050039670A1
公开(公告)日：2005-02-24
申请号：US10494247
申请日：2002-10-31
申请人： Hideo Hosono , Hiromichi Ota , Masahiro Orita , Kazushige Ueda , Masahiro Hirano , Toshio Kamiya
发明人： Hideo Hosono , Hiromichi Ota , Masahiro Orita , Kazushige Ueda , Masahiro Hirano , Toshio Kamiya
IPC分类号： C30B23/02 , H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786 , C30B1/00
CPC分类号： H01L29/7869 , C30B23/02 , C30B29/22 , C30B29/68 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78693
摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
摘要翻译：公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜中的任何一种上的复合氧化物，ZnO外延消失后的单晶衬底薄膜和ZnO单晶。复合氧化物用下式表示：M 1 M 2 O 3（ZnO）m，其中M 1是选自Ga，Fe，Sc，In，Lu，Yb中的至少一种，Tm，Er，Ho和Y，M 2为选自Mn，Fe，Ga，In和Al中的至少一种，m为1以上的自然数。通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

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