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31. 外观设计

USD373351S Keyboard 失效
公开(公告)号：USD373351S
公开(公告)日：1996-09-03
申请号：US36804
申请日：1995-03-28
申请人： Frank Chen
设计人： Frank Chen

32. 发明授权

US10223559B1 Tombstone information system 有权
公开(公告)号：US10223559B1
公开(公告)日：2019-03-05
申请号：US15396916
申请日：2017-01-03
申请人： Frank Chen
发明人： Frank Chen
IPC分类号： G06K7/10 , G06K7/14 , G06F17/30 , G06K19/06
摘要： The tombstone information system is an electronic reliquary that is adapted for use with a tombstone or other funerary marker. The tombstone information system is a memorial device that delivers an encomium of the life of the decedent. The tombstone information system comprises a marker, one or more encomia and a memorial database. The marker is a placard that conveys the index information required to identify and access the encomium associated with the decedent. The memorial database is a data storage device that stores and retrieves the encomium for delivery and display. The memorial database stores and manages one or more encomia. Each encomium selected from the one or more encomia comprises a eulogy, the vital statistics, and references to other relevant information regarding the decedent.

33. 发明申请

US20120239890A1 MEMORY CELL OPERATION 有权
标题翻译：记忆体操作
公开(公告)号：US20120239890A1
公开(公告)日：2012-09-20
申请号：US13485226
申请日：2012-05-31
申请人： Frank Chen , Liang (Leo) Chen
发明人： Frank Chen , Liang (Leo) Chen
IPC分类号： G06F12/00
CPC分类号： G06F3/0688 , G06F3/0604 , G11C16/349 , G11C16/3495
摘要： The present disclosure includes memory devices and systems having memory cells, as well as methods for operating the memory cells. One or more methods for operating memory cells includes determining age information for a portion of the memory cells and communicating a command set for the portion of the memory cells, the command set including the age information.
摘要翻译：本公开包括具有存储器单元的存储器件和系统，以及用于操作存储器单元的方法。用于操作存储器单元的一种或多种方法包括确定存储器单元的一部分的年龄信息，并且传送针对存储器单元的部分的命令集，该命令集包括年龄信息。

34. 发明申请

US20100082919A1 DATA STREAMING FOR SOLID-STATE BULK STORAGE DEVICES 有权
标题翻译：用于固态储存器件的数据流
公开(公告)号：US20100082919A1
公开(公告)日：2010-04-01
申请号：US12327879
申请日：2008-12-04
申请人： Frank Chen , Yuan Rong
发明人： Frank Chen , Yuan Rong
IPC分类号： G06F12/00 , G06F17/30 , G06F12/16
CPC分类号： G06F3/0604 , G06F3/0613 , G06F3/0619 , G06F3/0631 , G06F3/0656 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/1016 , G06F11/1044 , G06F11/1068 , G06F12/0246 , G06F2212/7203 , G06F2212/7207 , G11C29/52
摘要： Methods and apparatus facilitate data streaming in bulk storage devices by generating linked lists containing entries for both user data and metadata. These linked lists containing mixed data types facilitate receiving and outputting user data, and to insert or ignore, respectively, metadata corresponding to that user data without interrupting flow of the user data.
摘要翻译：方法和设备通过生成包含用户数据和元数据的条目的链接列表来促进大容量存储设备中的数据流传输。这些包含混合数据类型的链表有助于接收和输出用户数据，并分别插入或忽略与该用户数据相对应的元数据，而不会中断用户数据的流。

35. 发明授权

US07494865B2 Fabrication method of metal oxide semiconductor transistor 有权
标题翻译：金属氧化物半导体晶体管的制造方法
公开(公告)号：US07494865B2
公开(公告)日：2009-02-24
申请号：US11459360
申请日：2006-07-23
申请人： Yu-Chi Chen , Jih-Wen Chou , Frank Chen
发明人： Yu-Chi Chen , Jih-Wen Chou , Frank Chen
IPC分类号： H01L21/8242
CPC分类号： H01L29/66628 , H01L21/28061 , H01L29/66621 , H01L29/7834
摘要： A manufacturing method of metal oxide semiconductor transistor is provided. A substrate is provided. A source/drain extension region is formed in the substrate. A pad material layer with low dielectric constant is formed on the substrate. A trench is formed in the substrate and the pad material layer. A gate dielectric layer is formed on the surface of the substrate in the trench. A stacked gate structure is formed in the trench, wherein the top surface of a conductive layer of the stacked gate structure is higher than the surface of the pad material layer. A spacer material layer is formed conformably on the substrate. Portions of the spacer material layer and the pad material layer are removed so as to form a pair of first spacers and a pair of pad blocks. A source/drain is formed on the substrate beside the stacked gate structure.
摘要翻译：提供了金属氧化物半导体晶体管的制造方法。提供基板。源极/漏极延伸区域形成在衬底中。在基板上形成具有低介电常数的焊盘材料层。在衬底和衬垫材料层中形成沟槽。栅极电介质层形成在沟槽中的衬底的表面上。在沟槽中形成堆叠的栅极结构，其中层叠栅极结构的导电层的顶表面高于焊盘材料层的表面。衬垫材料层在衬底上顺应地形成。去除间隔材料层和垫材料层的一部分，以形成一对第一间隔物和一对垫块。源极/漏极形成在堆叠栅极结构旁边的衬底上。

36. 发明申请

US20070267691A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF 有权
标题翻译：金属氧化物半导体晶体管及其制造方法
公开(公告)号：US20070267691A1
公开(公告)日：2007-11-22
申请号：US11459360
申请日：2006-07-23
申请人： Yu-Chi Chen , Jih-Wen Chou , Frank Chen
发明人： Yu-Chi Chen , Jih-Wen Chou , Frank Chen
IPC分类号： H01L29/94
CPC分类号： H01L29/66628 , H01L21/28061 , H01L29/66621 , H01L29/7834
摘要： A manufacturing method of metal oxide semiconductor transistor is provided. A substrate is provided. A source/drain extension region is formed in the substrate. A pad material layer with low dielectric constant is formed on the substrate. A trench is formed in the substrate and the pad material layer. A gate dielectric layer is formed on the surface of the substrate in the trench. A stacked gate structure is formed in the trench, wherein the top surface of a conductive layer of the stacked gate structure is higher than the surface of the pad material layer. A spacer material layer is formed conformably on the substrate. Portions of the spacer material layer and the pad material layer are removed so as to form a pair of first spacers and a pair of pad blocks. A source/drain is formed on the substrate beside the stacked gate structure.
摘要翻译：提供了金属氧化物半导体晶体管的制造方法。提供基板。源极/漏极延伸区域形成在衬底中。在基板上形成具有低介电常数的焊盘材料层。在衬底和衬垫材料层中形成沟槽。栅极电介质层形成在沟槽中的衬底的表面上。在沟槽中形成堆叠的栅极结构，其中层叠栅极结构的导电层的顶表面高于焊盘材料层的表面。衬垫材料层在衬底上顺应地形成。去除间隔材料层和垫材料层的一部分，以形成一对第一间隔物和一对垫块。源极/漏极形成在堆叠栅极结构旁边的衬底上。

37. 发明申请

US20070259188A1 COATING SYSTEM FOR CEMENT COMPOSITE ARTICLES 有权
标题翻译：水泥复合材料涂层系统
公开(公告)号：US20070259188A1
公开(公告)日：2007-11-08
申请号：US11669134
申请日：2007-01-30
申请人： Shaobing Wu , T. Killilea , Glen Vetter , Frank Chen , James Bohannon
发明人： Shaobing Wu , T. Killilea , Glen Vetter , Frank Chen , James Bohannon
IPC分类号： B05D1/02
CPC分类号： C04B41/483 , C04B41/009 , C04B41/52 , C04B41/63 , C04B41/71 , C04B2111/29 , E04C2/06 , Y10T428/249932 , Y10T428/31551 , Y10T428/31815 , Y10T428/31855 , C04B41/0045 , C04B41/502 , C04B41/5089 , C04B2103/0046 , C04B20/0048 , C04B28/02
摘要： A coated article which includes a cement fiberboard substrate and a radiation-curable coating system applied to the substrate. The coating system includes an aqueous dispersion of water-dispersible polymer particles, one or more olefinic compounds and water, and may be provided in the form of one or more coating compositions that may be applied in one or more layers, wherein each of the coating compositions is preferably an aqueous composition, or can be mixed with another composition (e.g., on the substrate) to form an aqueous composition.
摘要翻译：一种涂覆制品，其包括水泥纤维板基材和应用于基材的可辐射固化涂料体系。涂料体系包括水分散体，水分散性聚合物颗粒，一种或多种烯烃化合物和水，并且可以以一种或多种涂料组合物的形式提供，其可以涂覆在一层或多层中，其中每层涂层组合物优选为水性组合物，或者可以与另一组合物（例如，在基材上）混合以形成含水组合物。

38. 发明申请

US20070061126A1 System for and method of emulating electronic input devices 审中-公开
标题翻译：仿真电子输入设备的系统和方法
公开(公告)号：US20070061126A1
公开(公告)日：2007-03-15
申请号：US11219100
申请日：2005-09-01
申请人： Anthony Russo , Frank Chen , Mark Howell , Hung Ngo , Marcia Tsuchiya , David Weigand
发明人： Anthony Russo , Frank Chen , Mark Howell , Hung Ngo , Marcia Tsuchiya , David Weigand
IPC分类号： G06F9/455
CPC分类号： G06F3/03547 , G06F3/04883
摘要： The system and method of the present invention is directed to emulating and configuring any of a plurality of electronic input devices. A system in accordance with one embodiment of the present invention comprises an interface and an emulator. The interface is for selecting and configuring an electronic input device from a plurality of electronic input devices, and the emulator is for emulating the electronic input device. Preferably, the plurality of electronic input devices comprise any two or more of a scroll wheel, a mouse, a joy stick, a steering wheel, an analog button, and a touch bar. Also in a preferred embodiment, the interface is an Application Programming Interface (API) and the emulator comprises a finger swipe sensor for receiving user input.
摘要翻译：本发明的系统和方法旨在仿真和配置多个电子输入设备中的任何一个。根据本发明的一个实施例的系统包括接口和仿真器。该接口用于从多个电子输入设备中选择和配置电子输入设备，并且该仿真器用于仿真电子输入设备。优选地，多个电子输入装置包括滚轮，鼠标，操纵杆，方向盘，模拟按钮和触摸条中的任何两个或更多个。同样在优选实施例中，接口是应用编程接口（API），并且仿真器包括用于接收用户输入的手指滑动传感器。

39. 发明授权

US06831878B2 Electronic device capable of counting down to an integral time point 失效
标题翻译：电子设备能够倒计时到一个积分时间点
公开(公告)号：US06831878B2
公开(公告)日：2004-12-14
申请号：US09956887
申请日：2001-09-21
申请人： Frank Chen , Chuan Wang Chang
发明人： Frank Chen , Chuan Wang Chang
IPC分类号： G04F500
CPC分类号： G04F1/005
摘要： An electronic device capable of counting down to an integral time point has an integral time point selector for setting an integral time point. A timer serves for recording the current time. A synchronous calculating unit serves for reading the integral time point from the integral time point selector and reading the current time from the timer. The time interval from the current time to the integral time point is calculated as a counting down time period. A counter serves for reading the counting down time interval from the synchronous calculating unit and starting to count down.
摘要翻译：能够向下计数到积分时间点的电子装置具有用于设定积分时间点的积分时间点选择器。定时器用于记录当前时间。同步计算单元用于从积分时间点选择器读取积分时间点并从定时器读取当前时间。从当前时间到积分时间点的时间间隔计算为计数停机时间。计数器用于从同步计算单元读取计数时间间隔并开始倒数。

40. 外观设计

USD441114S1 Desk lamp 失效
公开(公告)号：USD441114S1
公开(公告)日：2001-04-24
申请号：US29119634
申请日：2000-03-02
申请人： Frank Chen
设计人： Frank Chen

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