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31. 发明申请

US20130314119A1 TESTING STRUCTURE AND METHOD OF USING THE TESTING STRUCTURE 有权
标题翻译：测试结构和使用测试结构的方法
公开(公告)号：US20130314119A1
公开(公告)日：2013-11-28
申请号：US13478137
申请日：2012-05-23
申请人： Fen Chen , Kai Di Feng , Pui Ling Yee
发明人： Fen Chen , Kai Di Feng , Pui Ling Yee
IPC分类号： G01R31/26
CPC分类号： H01L22/34 , H01L2924/00 , H01L2924/0002
摘要： A metal-to-metal leakage and breakdown testing structure for semiconductor structures and method of using the testing structure is disclosed. The testing structure includes plurality of resistor bridges connected to respective two terminal devices. The testing structure further includes a plurality of switches each having a voltage node provided between resistors of a respective one of the plurality of resistor bridges. The voltage node is read at a circuit pad when a respective one of the plurality of switches is in an on state. The testing structure further includes a device turning on and off each of the plurality of switches, individually.
摘要翻译：公开了一种用于半导体结构的金属 - 金属泄漏和击穿测试结构以及使用该测试结构的方法。测试结构包括连接到相应的两个终端设备的多个电阻桥。测试结构还包括多个开关，每个开关具有设置在多个电阻器桥中的相应一个的电阻器之间的电压节点。当多个开关中的相应一个开关处于导通状态时，在电路板处读取电压节点。测试结构还包括单独地打开和关闭多个开关中的每一个的装置。

32. 发明申请

US20120287707A1 OPTOELECTRONIC MEMORY DEVICES 审中-公开
标题翻译：光电存储器件
公开(公告)号：US20120287707A1
公开(公告)日：2012-11-15
申请号：US13558541
申请日：2012-07-26
申请人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
发明人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.
摘要翻译：一个结构。该结构包括衬底，衬底上的电阻/反射区域以及被配置为确定电阻/反射区域中的反射率和/或电阻变化的光源/光检测和/或感测放大器电路。电阻/反射区域包括具有材料的反射率和/或电阻的特性的材料由于材料的相变而改变。电阻/反射区域被配置为通过材料的相变来响应通过电阻/反射区域的电流和/或投射在电阻/反射区域上的激光束，这导致反射和/ 电阻/反射区域从第一反射率和/或电阻值到不同于第一反射率和/或电阻值的第二反射率和/或电阻值。

33. 发明申请

US20120261724A1 STACKABLE PROGRAMMABLE PASSIVE DEVICE AND A TESTING METHOD 失效
标题翻译：可堆叠可编程被动设备和测试方法
公开(公告)号：US20120261724A1
公开(公告)日：2012-10-18
申请号：US13529557
申请日：2012-06-21
申请人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
发明人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
IPC分类号： H01L23/52 , H01L21/326
CPC分类号： H01L27/101 , H01L23/5252 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable passive device comprising a first node and a second node. A plurality of passive device elements electrically coupled to the first node. A plurality of switches are electrically coupled to at least the second node and selectively coupled to a number of the plurality of passive device elements to provide the programmable passive device with a pre-determined value.
摘要翻译：一种包括第一节点和第二节点的可编程无源设备。电耦合到第一节点的多个无源器件元件。多个开关电耦合到至少第二节点并且选择性地耦合到多个无源器件元件，以向可编程无源器件提供预定值。

34. 发明授权

US08237463B1 Method for managing circuit reliability 失效
标题翻译：管理电路可靠性的方法
公开(公告)号：US08237463B1
公开(公告)日：2012-08-07
申请号：US13034758
申请日：2011-02-25
申请人： Fen Chen , Kai D. Feng , Zhong-Xiang He
发明人： Fen Chen , Kai D. Feng , Zhong-Xiang He
IPC分类号： H03K19/003
CPC分类号： H03K19/00307
摘要： Managing reliability of a circuit that includes a plurality of duplicate components, with less than all of the components being active at any time during circuit operation, where reliability is managed by operating, by the circuit, with a first set of components that includes a predefined number of components; selecting, without altering circuit performance and in accordance with a circuit reliability protocol, a second set of components with which to operate, including activating an inactive component and deactivating an active component of the first set of components; and operating, by the circuit, with the second set of components.
摘要翻译：管理包括多个重复部件的电路的可靠性，其中小于所有组件在电路操作期间的任何时间处于活动状态，其中可靠性由电路通过第一组组件来管理，该组件包括预定义的组件数量; 根据电路可靠性协议选择不改变电路性能的第二组组件，包括激活非活动组件和去激活第一组组件的活动组件; 并通过电路与第二组元件一起操作。

35. 发明授权

US07842318B2 Use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori 有权
标题翻译：使用从姜黄根茎提取的有效产品治疗与幽门螺杆菌相关的疾病
公开(公告)号：US07842318B2
公开(公告)日：2010-11-30
申请号：US11907854
申请日：2007-10-18
申请人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
发明人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
IPC分类号： A61K36/9068
CPC分类号： A61K36/9068
摘要： The present invention discloses a new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a reverse phase chromatography column, and eluting the column with a first eluent having a polarity lower than water to obtain a first potent fraction or a second eluent having a polarity lower than that of the first eluent to obtain a second potent fraction. Preferably, the second potent fraction is substantially free of both 6-gingerol and 6-shogaol.
摘要翻译：本发明公开了一种从姜黄根提取的有效产品在治疗与幽门螺杆菌相关的疾病如胃炎，胃溃疡或十二指肠溃疡中的新用途。所述有效产物通过以下步骤制备，所述方法包括以下步骤：a）从姜黄根茎制备粗提取物，所述粗提物包含6-姜醇和6-shogaol; b）将粗提取物引入反相层析柱，并用极性低于水的第一洗脱液洗脱柱，以获得极性低于第一洗脱液的第一有效级分或第二洗脱液，从而获得第二有效分数。优选地，第二有效级分基本上不含6-姜醇和6-shogaol。

36. 发明申请

US20100133691A1 THERMALLY PROGRAMMABLE ANTI-REVERSE ENGINEERING INTERCONNECTS AND METHODS OF FABRICATING SAME 有权
标题翻译：可逆编程的反向工程互连及其制造方法
公开(公告)号：US20100133691A1
公开(公告)日：2010-06-03
申请号：US12698189
申请日：2010-02-02
申请人： Fen Chen , Cathryn Jeanne Christiansen , Michael Anthony Shinosky , Timothy Dooling Sullivan
发明人： Fen Chen , Cathryn Jeanne Christiansen , Michael Anthony Shinosky , Timothy Dooling Sullivan
IPC分类号： H01L23/50
CPC分类号： H01L21/76895 , H01L23/34 , H01L23/522 , H01L23/576 , H01L2924/0002 , Y10S438/917 , H01L2924/00
摘要： An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.
摘要翻译：互连和互连方法。该方法包括在基底上形成电介质层，介电层具有顶表面和底表面; 在所述电介质层中形成第一线和第二线，所述第一线与所述第二线分离，通过所述介电层的区域; 并且在第一和第二布线之间的电介质层的顶表面中或上方形成金属纳米颗粒，仅在将纳米颗粒加热到大于室温的温度时能够电连接第一布线和第二布线的金属纳米颗粒，在第一和第二导线之间施加电压。

37. 发明申请

US20090107220A1 Design Structure for an On-Chip Real-Time Moisture Sensor For and Method of Detecting Moisture Ingress in an Integrated Circuit Chip 失效
标题翻译：片上实时湿度传感器的设计结构和检测集成电路芯片中水分入口的方法
公开(公告)号：US20090107220A1
公开(公告)日：2009-04-30
申请号：US11926241
申请日：2007-10-29
申请人： Fen Chen , Kai D. Feng
发明人： Fen Chen , Kai D. Feng
IPC分类号： G01N25/56
CPC分类号： G01N27/223
摘要： A design structure for an on-chip real-time moisture detection circuitry for monitoring ingress of moisture into an integrated circuit chip during the operational lifetime of the chip. The moisture detection circuitry includes one or more moisture-sensing units and a common moisture monitor for monitoring the state of each moisture-sensing units. The moisture monitor can be configured to provided a real-time moisture-detected signal for signaling that moisture ingress into the integrated circuit chip has occurred.
摘要翻译：一种片上实时水分检测电路的设计结构，用于在芯片的使用寿命期间监测水分进入集成电路芯片的情况。湿度检测电路包括一个或多个湿度感测单元和用于监测每个湿度感测单元的状态的公共湿度监视器。水分监测器可以被配置为提供实时湿度检测信号，用于发信号通知已经发生湿气进入集成电路芯片。

38. 发明申请

US20080232159A1 PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY 有权
公开(公告)号：US20080232159A1
公开(公告)日：2008-09-25
申请号：US12109081
申请日：2008-04-24
申请人： John M. Aitken , Fen Chen , Kai D. Feng
发明人： John M. Aitken , Fen Chen , Kai D. Feng
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C11/5692 , G11C13/0004 , G11C17/16 , G11C17/18 , H01L27/101 , H01L27/2409 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/145
摘要： The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.

39. 发明授权

US07345503B2 Method and apparatus for impedance matching in transmission circuits using tantalum nitride resistor devices 有权
标题翻译：使用氮化钽电阻器件的传输电路中的阻抗匹配的方法和装置
公开(公告)号：US07345503B2
公开(公告)日：2008-03-18
申请号：US11427798
申请日：2006-06-30
申请人： Fen Chen , Kai D. Feng , Robert J. Gauthier, Jr. , Tom C. Lee
发明人： Fen Chen , Kai D. Feng , Robert J. Gauthier, Jr. , Tom C. Lee
IPC分类号： H03K17/16 , H03K19/003
CPC分类号： H03K19/018571
摘要： A method for trimming impedance matching devices in high-speed circuits includes determining an electrical parameter associated with a first tantalum nitride (TaN) resistor used as an impedance matching device in the circuit under test, and comparing the determined electrical parameter associated with the first TaN resistor to a desired design value of the electrical parameter. The resistance value of the first TaN resistor is altered by application of a trimming voltage thereto, wherein the trimming voltage is based on a voltage-resistance characteristic curve of the first TaN resistor. It is then determined whether the altered resistance value of the first TaN resistor causes the electrical parameter to equal the desired design value thereof, and the altering of the resistance value of the first TaN resistor by application of a trimming voltage is repeated until the electrical parameter equals the desired design value thereof.
摘要翻译：一种用于微调高速电路中的阻抗匹配装置的方法包括：确定与在被测电路中用作阻抗匹配装置的第一氮化钽（TaN）电阻相关联的电参数，并将确定的与第一TaN相关的电参数进行比较电阻到所需的电参数设计值。通过施加微调电压来改变第一TaN电阻器的电阻值，其中微调电压基于第一TaN电阻器的耐电压特性曲线。然后确定第一TaN电阻器的改变的电阻值是否使电参数等于其期望的设计值，并且重复通过施加微调电压来改变第一TaN电阻器的电阻值，直到电参数等于其期望的设计值。

40. 发明授权

US08563336B2 Method for forming thin film resistor and terminal bond pad simultaneously 有权
标题翻译：同时形成薄膜电阻和端子焊盘的方法
公开(公告)号：US08563336B2
公开(公告)日：2013-10-22
申请号：US12342430
申请日：2008-12-23
申请人： Fen Chen , Jeffrey P. Gambino , Zhong-Xiang He , Tom C. Lee , John C. Malinowski , Anthony K. Stamper
发明人： Fen Chen , Jeffrey P. Gambino , Zhong-Xiang He , Tom C. Lee , John C. Malinowski , Anthony K. Stamper
IPC分类号： H01L21/00
CPC分类号： H01L28/20 , H01C7/006 , H01C17/075 , H01L21/7685 , H01L23/5228 , H01L23/53295 , H01L24/11 , H01L28/24 , H01L2224/0231 , H01L2224/02313 , H01L2224/0401 , H01L2224/04042 , H01L2224/05181 , H01L2224/05546 , H01L2224/05624 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01016 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/19043 , H01L2924/00014 , H01L2924/013
摘要： Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.
摘要翻译：公开了同时形成薄膜电阻器和端子接合焊盘的方法。一种方法包括在端子线上同时形成端子接合焊盘和在另外两条导线上形成薄膜电阻器。

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