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31. 发明授权

US5953248A Low switching field magnetic tunneling junction for high density arrays 失效
标题翻译：低开关磁场隧道结，用于高密度阵列
公开(公告)号：US5953248A
公开(公告)日：1999-09-14
申请号：US118979
申请日：1998-07-20
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/12 , G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , G11C11/5607 , H01L27/222 , G11C2211/5615
摘要： A low switching field magnetic tunneling junction memory cell including an antiferromagnetically coupled structure having first and second magnetoresistive layers of different thicknesses and a non-magnetic conducting layer sandwiched therebetween so that the magnetic vectors of the pair of layers are anti-parallel with no applied magnetic field, a magnetoresistive structure having a magnetic vector, and electrically insulating material sandwiched between the antiferromagnetically coupled structure and the magnetoresistive structure to form a magnetic tunneling junction.
摘要翻译：包括具有不同厚度的第一和第二磁阻层和夹在其间的非磁性导电层的反铁磁耦合结构的低开关磁场磁隧道结存储单元，使得一对层的磁矢量与没有施加磁力反平行具有磁矢量的磁阻结构和夹在反铁磁耦合结构和磁阻结构之间的电绝缘材料以形成磁隧道结。

32. 发明授权

US5917749A MRAM cell requiring low switching field 失效
标题翻译：需要低开关场的MRAM单元
公开(公告)号：US5917749A
公开(公告)日：1999-06-29
申请号：US862898
申请日：1997-05-23
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G11C11/56 , G11C11/15
CPC分类号： G11C11/5607 , G11C11/161 , G11C2211/5615 , G11C2211/5616
摘要： A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.
摘要翻译：一种低开关场多状态多层磁存储单元，包括两层平行堆叠的磁性材料，叠置关系并由一层非磁性材料隔开，以形成多层磁存储单元的一部分。两层磁性材料形成为使得该宽度小于两层磁性材料中的磁畴壁的长度和小于宽度的宽度，沿着其长度设定形状各向异性易轴。两层磁性材料中至少有一层具有大致平行于磁性材料层宽度的磁各向异性。

33. 发明授权

US5702831A Ferromagnetic GMR material 失效
标题翻译：铁磁GMR材料
公开(公告)号：US5702831A
公开(公告)日：1997-12-30
申请号：US553933
申请日：1995-11-06
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/324 , H01L27/222 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12465 , Y10T428/12632 , Y10T428/1275 , Y10T428/12854 , Y10T428/12861 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951
摘要： A multi-layer magnetic material (10) has magnetic vectors (21,22) that point along a length (27) of the material (10). Opposing magnetic fields cause the vectors to snap past the perpendicular position with a rapid change in the resistance of the material. The material is used as a memory cell (37,38,39,41) of a memory (36).
摘要翻译：多层磁性材料（10）具有指向材料（10）的长度（27）的磁性矢量（21,22）。相反的磁场使得矢量随着材料电阻的快速变化而跳过垂直位置。该材料用作存储器（36）的存储单元（37,38,39,41）。

34. 发明授权

US06177204B1 Ferromagnetic GMR material and method of forming and using 失效
标题翻译：铁磁GMR材料及其形成与使用方法
公开(公告)号：US06177204B1
公开(公告)日：2001-01-23
申请号：US08932400
申请日：1997-09-17
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/324 , H01L27/222 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12465 , Y10T428/12632 , Y10T428/1275 , Y10T428/12854 , Y10T428/12861 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951
摘要： A multi-layer magnetic material (10) has magnetic vectors (21,22) that point along a length (27) of the material (10). Opposing magnetic fields cause the vectors to snap past the perpendicular position with a rapid change in the resistance of the material. The material is used as a memory cell (37,38,39,41) of a memory (36).
摘要翻译：多层磁性材料（10）具有指向材料（10）的长度（27）的磁性矢量（21,22）。相反的磁场使得矢量随着材料电阻的快速变化而跳过垂直位置。该材料用作存储器（36）的存储单元（37,38,39,41）。

35. 发明授权

US5818316A Nonvolatile programmable switch 失效
标题翻译：非易失性可编程开关
公开(公告)号：US5818316A
公开(公告)日：1998-10-06
申请号：US892641
申请日：1997-07-15
申请人： Jun Shen , Saied N. Tehrani , Eugene Chen
发明人： Jun Shen , Saied N. Tehrani , Eugene Chen
IPC分类号： G11C11/50 , G11C23/00 , H01H51/22
CPC分类号： G11C11/50 , G11C23/00
摘要： A nonvolatile programmable switch includes first and second magnetizable conductors having first and second ends, respectively, each of which is a north or south pole. The ends are mounted for relative movement between a first position in which they are in contact and a second position in which they are insulated from each other. The first conductor is permanently magnetized and the second conductor is switchable in response to a magnetic field applied thereto. Programming means are associated with the second conductor for switchably magnetizing the second conductor so that the second end is alternatively a north or south pole. The first and second ends are held in the first position by magnetic attraction and in the second position by magnetic repulsion.
摘要翻译：非易失性可编程开关包括分别具有第一和第二端的第一和第二可磁化导体，其中每一个是北极或南极。端部被安装成在它们接触的第一位置和彼此绝缘的第二位置之间进行相对运动。第一导体被永久磁化，并且第二导体响应于施加到其上的磁场而可切换。编程装置与第二导体相关联，用于可切换地磁化第二导体，使得第二端可选地是北极或南极。第一和第二端通过磁吸引力保持在第一位置，并且在第二位置通过磁力排斥保持。

36. 发明授权

US5745408A Multi-layer magnetic memory cell with low switching current 失效
标题翻译：具有低开关电流的多层磁存储单元
公开(公告)号：US5745408A
公开(公告)日：1998-04-28
申请号：US709589
申请日：1996-09-09
申请人： Eugene Chen , Saied N. Tehrani , Herbert Goronkin
发明人： Eugene Chen , Saied N. Tehrani , Herbert Goronkin
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5615 , G11C2211/5616
摘要： A multi-layer magnetic memory cell including two similar layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material. Each of the two similar layers have a width that is less than a width of magnetic domain walls within the layer of magnetic material so that magnetic vectors in the two similar layers point along the length thereof. The two similar layers define a central plane parallel with the two similar layers symmetrically formed and positioned thereabout. Magnetic vectors in the two similar layers are switched simultaneously and the two similar layers are positioned close enough together to allow mutual cancellation of pole effects during simultaneous switching of the magnetic vectors.
摘要翻译：一层多层磁性存储单元，包括两层相似的磁性材料层，平行层叠，并由一层非磁性材料分开。两个相似层中的每一个具有小于磁性材料层内的磁畴壁的宽度的宽度，使得两个相似层中的磁矢量沿其长度指向。两个相似的层限定了与对称地形成并定位在其周围的两个相似层平行的中心平面。两个相似层中的磁矢量被同时切换，并且两个相似的层被放置得足够靠近在一起，以允许在磁矢量的同时切换期间相互抵消极效应。

37. 发明授权

US5828598A MRAM with high GMR ratio 失效
标题翻译： MRAM具有高GMR比
公开(公告)号：US5828598A
公开(公告)日：1998-10-27
申请号：US862738
申请日：1997-05-23
申请人： Eugene Chen , Saied N. Tehrani , David W. Cronk
发明人： Eugene Chen , Saied N. Tehrani , David W. Cronk
IPC分类号： G11C11/15 , G11C7/00
CPC分类号： G11C11/15
摘要： A magnetic memory cell with increased GMR ratio includes first and second layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material sandwiched between the first and second layers of magnetic material. Each of the first and second layers is switchable between a first and a second magnetic state and is formed to switch states with the application of a substantially equal magnetic field. A third layer of magnetic material is positioned adjacent one of the first and second layers of magnetic material so as to alter the amount of magnetic field required to switch the states of the one of the first and second layers of magnetic material. The third layer of magnetic material can be formed with a width larger than the cell width to increase the magnetic width of the cell and reduce the magnetic field required to switch states.
摘要翻译：具有增加的GMR比率的磁存储单元包括平行堆叠的第一和第二层磁性材料，覆盖关系并由夹在第一和第二磁性层之间的非磁性材料层分开。第一层和第二层中的每一层可在第一和第二磁状态之间切换，并且形成为通过施加基本相等的磁场来切换状态。磁性材料的第三层位于第一和第二磁性层之一附近，以改变切换第一和第二磁性层之一的状态所需的磁场的量。可以形成具有大于单元宽度的宽度的第三层磁性材料以增加单元的磁宽度并减小开关状态所需的磁场。

38. 发明授权

US5774394A Magnetic memory cell with increased GMR ratio 失效
标题翻译：具有增加的GMR比的磁记忆体
公开(公告)号：US5774394A
公开(公告)日：1998-06-30
申请号：US862090
申请日：1997-05-22
申请人： Eugene Chen , Saied N. Tehrani , Steven A. Voight
发明人： Eugene Chen , Saied N. Tehrani , Steven A. Voight
IPC分类号： G11C11/16 , H01F10/32 , G11C11/15
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/3268
摘要： A first layer of non-magnetic material is positioned on a layer of an oxide of a magnetic material (e.g. NiO). First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a second layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. The magnetic memory cell is positioned on the first layer of nonmagnetic material so as to sandwich the first nonmagnetic layer between the oxide and the first magnetic layer of the cell. The first layer of non-magnetic material has a thickness (e.g. approximately 7 .ANG.) which prevents the oxide from pinning the first layer of magnetic material and adapts the first layer of magnetic material to the layer of oxide so as to increase the GMR ratio of the magnetic memory cell.
摘要翻译：第一层非磁性材料位于磁性材料（例如NiO）的氧化物层上。第一和第二层磁性材料层叠在一起，叠置关系并被夹在其间的非磁性材料的第二层隔开以形成磁存储单元。磁存储单元位于非磁性材料的第一层上，以将第一非磁性层夹在电池的氧化物和第一磁性层之间。第一层非磁性材料具有厚度（例如约7安格姆），其防止氧化物钉住第一层磁性材料并使第一层磁性材料适应于氧化物层，以便增加GMR比值磁性存储单元。

39. 发明授权

US5732016A Memory cell structure in a magnetic random access memory and a method for fabricating thereof 失效
标题翻译：磁性随机存取存储器中的存储单元结构及其制造方法
公开(公告)号：US5732016A
公开(公告)日：1998-03-24
申请号：US674387
申请日：1996-07-02
申请人： Eugene Chen , Saied N. Tehrani , Herbert Goronkin
发明人： Eugene Chen , Saied N. Tehrani , Herbert Goronkin
IPC分类号： H01L43/08 , G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , G11C11/00
CPC分类号： G11C11/14 , H01L27/222 , H01L43/08
摘要： A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.
摘要翻译：提供具有卷绕单字或多字线（12）的巨磁阻（GMR）材料（11）的一部分的磁随机存取存储器（MRAM）单元结构（10）。由字电流（13,14）产生的磁场叠加在GMR材料（11）的一部分中，使得磁场的总强度成比例地增加。相同的字电流多次通过GMR材料（11）的部分，从而在常规MRAM单元中产生大字电流多次的等效字场。

40. 发明授权

US06512689B1 MRAM without isolation devices 失效
标题翻译： MRAM无隔离设备
公开(公告)号：US06512689B1
公开(公告)日：2003-01-28
申请号：US10051646
申请日：2002-01-18
申请人： Peter K. Naji , Mark A. Durlam , Saied N. Tehrani
发明人： Peter K. Naji , Mark A. Durlam , Saied N. Tehrani
IPC分类号： G11C1100
CPC分类号： G11C7/14 , G11C11/15
摘要： A magnetoresistive random access memory architecture free of isolation devices includes a plurality of data columns of non-volatile magnetoresistive elements. A reference column includes non-volatile magnetoresistive elements positioned adjacent to the data column. Each column is connected to a current conveyor. A selected data current conveyor and the reference current conveyor are connected to inputs of a differential amplifier for differentially comparing a data voltage to a reference voltage. The current conveyors are connected directly to the ends of the data and reference bitlines. This specific arrangement allows the current conveyors to be clamped to the same voltage which reduces or removes sneak circuits to substantially reduce leakage currents.
摘要翻译：没有隔离装置的磁阻随机存取存储器架构包括多个非易失性磁阻元件的数据列。参考柱包括与数据列相邻定位的非易失性磁阻元件。每列连接到当前输送机。选择的数据流传输器和参考电流传输器连接到差分放大器的输入端，用于将数据电压与参考电压进行差分比较。目前的输送机直接连接到数据和参考位线的末端。这种特定的布置允许当前输送机被夹紧到相同的电压，这减少或去除潜行电路以显着减少泄漏电流。

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