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31. 发明申请

US20090308413A1 APPARATUS AND SYSTEM FOR CLEANING A SUBSTRATE 有权
标题翻译：用于清洁基板的装置和系统
公开(公告)号：US20090308413A1
公开(公告)日：2009-12-17
申请号：US11532493
申请日：2006-09-15
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC分类号： B08B3/08
CPC分类号： H01L21/67051 , B08B3/003 , B08B3/02
摘要： An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.
摘要翻译：公开了一种用于清洁衬底的设备。该装置具有第一头单元和第二头单元。第一头单元定位成接近基底的表面，并且具有限定在构造成向基底的表面提供泡沫的第一排通道。第二头单元被定位成基本上与第一头单元相邻并且靠近衬底的表面。第二和第三行通道被限定在第二头单元内。第二排通道被配置成向衬底的表面提供流体。第三排通道被配置为向基板的表面施加真空。

32. 发明申请

US20090145464A1 Proximity head with angled vacuum conduit system, apparatus and method 有权
标题翻译：接近头带有倾斜的真空管道系统，设备和方法
公开(公告)号：US20090145464A1
公开(公告)日：2009-06-11
申请号：US11731532
申请日：2007-03-30
申请人： Michael Ravkin , John M. de Larios , Fred C. Redeker , Mikhail Korolik , Erik M. Freer
发明人： Michael Ravkin , John M. de Larios , Fred C. Redeker , Mikhail Korolik , Erik M. Freer
IPC分类号： B08B3/10 , B08B3/04 , B08B9/027 , B08B5/04
CPC分类号： H01L21/67051
摘要： A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.
摘要翻译：包括头表面的接近头。头表面包括第一平坦区域和多个第一管道。多个第一导管中的每一个由多个第一离散孔中的对应的一个限定。多个第一离散孔位于头表面并延伸穿过第一平坦区域。头表面还包括第二平坦区域和多个第二管道。多个第二导管由位于头表面中并延伸穿过第二平坦区域的相应多个第二离散孔限定。头表面还包括设置在第一平坦区域和第二平坦区域之间并与之相邻的第三平坦区域和多个第三导管。多个第三导管由位于头表面中并延伸穿过第三平坦区域的对应的多个第三离散孔限定。第三导管相对于第三平坦区域以第一角度形成。第一个角度在30到60度之间。还描述了用于处理具有邻近头的衬底的系统和方法。

33. 发明授权

US08555903B2 Method and apparatus for removing contamination from substrate 失效
标题翻译：去除基材污染的方法和装置
公开(公告)号：US08555903B2
公开(公告)日：2013-10-15
申请号：US12620288
申请日：2009-11-17
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , B05D3/10 , B08B7/02 , C11D1/04 , C11D3/042 , C11D3/044 , C11D3/18 , C11D3/2079 , C11D3/222 , C11D3/225 , C11D3/3765 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0004 , C11D17/0013 , C11D17/0017 , C11D17/003 , C11D17/041 , C23G1/00 , C23G1/18 , G03F7/42 , G03F7/423 , H01L21/02052 , H01L21/02096 , H01L21/31133 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
摘要翻译：清洁材料设置在基板上。清洁材料包括分散在液体介质中的固体组分。将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。施加到固体组分的力可以通过液体介质中的不混溶组分施加。当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

34. 发明申请

US20090308410A1 METHOD AND MATERIAL FOR CLEANING A SUBSTRATE 有权
标题翻译：清洗基材的方法和材料
公开(公告)号：US20090308410A1
公开(公告)日：2009-12-17
申请号：US11532491
申请日：2006-09-15
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D3/16 , B08B7/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/00 , C11D11/0047 , C11D17/0013 , C11D17/0017 , G03F1/82 , H01L21/02057 , H01L21/02096 , H01L21/67051
摘要： Methods for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body.
摘要翻译：公开了使用三态体进行清洁的方法。提供了沉积有颗粒的基板。产生具有固体部分，液体部分和气体部分的三态体。在三态体上施加力以发出固体部分和颗粒之间的相互作用。将三态体与来自衬底表面的颗粒一起去除。固体部分和颗粒之间的相互作用导致颗粒与三态体一起被去除。

35. 发明授权

US08591662B2 Methods for cleaning a semiconductor substrate 失效
标题翻译：清洗半导体衬底的方法
公开(公告)号：US08591662B2
公开(公告)日：2013-11-26
申请号：US13661929
申请日：2012-10-26
申请人： Erik M. Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B7/00
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将激活溶液施加到基底的表面来启动。活化溶液和基材的表面与固体清洁表面的表面接触。活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。还提供了相应的清洁装置。

36. 发明授权

US08137474B2 Cleaning compound and method and system for using the cleaning compound 失效
标题翻译：清洁剂及使用清洁剂的方法和系统
公开(公告)号：US08137474B2
公开(公告)日：2012-03-20
申请号：US12705445
申请日：2010-02-12
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D7/50
CPC分类号： H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
摘要翻译：提供清洁化合物。清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

37. 发明授权

US07696141B2 Cleaning compound and method and system for using the cleaning compound 有权
标题翻译：清洁剂及使用清洁剂的方法和系统
公开(公告)号：US07696141B2
公开(公告)日：2010-04-13
申请号：US11347154
申请日：2006-02-03
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D1/02
CPC分类号： H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
摘要翻译：提供清洁化合物。清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

38. 发明授权

US07598175B2 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US07598175B2
公开(公告)日：2009-10-06
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： H01L21/302
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

39. 发明申请

US20080227369A1 Apparatus and Method for Confined Area Planarization 有权
标题翻译：密闭面平面化装置与方法
公开(公告)号：US20080227369A1
公开(公告)日：2008-09-18
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： B24B57/02 , H05K3/07 , C25F3/00
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

40. 发明授权

US07648616B1 Apparatus and method for semiconductor wafer electroplanarization 有权
标题翻译：用于半导体晶片电平面化的装置和方法
公开(公告)号：US07648616B1
公开(公告)日：2010-01-19
申请号：US11394777
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
IPC分类号： C25F7/00 , C25B9/08
CPC分类号： C25F7/00 , H01L21/67011
摘要： A number of apertures are defined within a wall of a chamber defined to maintain an electrolyte solution. A cation exchange membrane is disposed within the chamber over the number of apertures. The electrolyte solution pressure within the chamber causes the cation exchange membrane to extend through the apertures beyond an outer surface of the chamber. A cathode is disposed within the chamber. The cathode is maintained at a negative bias voltage relative to a top surface of a wafer to be planarized. When the top surface of the wafer is brought into proximity of the cation exchange membrane extending through the apertures, and a deionized water layer is disposed between the top surface of the wafer and the cation exchange membrane, a cathode half-cell is established such that metal cations are liberated from the top surface of the wafer and plated on the cathode in the chamber.
摘要翻译：在限定为维持电解质溶液的室的壁内限定了许多孔。阳离子交换膜在腔室内设置多个孔。室内的电解质溶液压力导致阳离子交换膜延伸穿过孔超过室的外表面。阴极设置在室内。阴极相对于要平坦化的晶片的顶表面保持在负偏压。当晶片的顶表面靠近延伸穿过孔的阳离子交换膜，并且在晶片的顶表面和阳离子交换膜之间设置去离子水层时，建立阴极半电池，使得金属阳离子从晶片的顶表面释放并镀在腔室中的阴极上。

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