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31. 发明申请

US20080179007A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING PLASMA PRODUCTS IN A LOWER PROCESS ZONE AND PURGE GASES IN AN UPPER PROCESS ZONE 审中-公开
标题翻译：在下一个工艺区域中使用等离子体产品并在上一个工艺区域中使用过滤器的水分离反应器
公开(公告)号：US20080179007A1
公开(公告)日：2008-07-31
申请号：US11685770
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone. An external plasma-generating chamber is coupled to the chamber, the external plasma-generating chamber configured to introduce a plasma by-product into the lower process zone, and a supply of a polymer etch precursor gas to the external plasma-generating chamber. The ceiling includes a gas distribution plate facing the upper process zone, the reactor further comprising a purge gas supply coupled to the gas distribution plate.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。所述反应器还包括在所述室内的工件支撑装置，所述工件支撑装置构造成用于要放置在其上的工件，其前侧面向天花板。支撑装置被配置为留下被暴露的工件的后侧的至少一个环形周边。限制构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间分隔室的边界反应器还包括耦合到下处理区的真空泵。外部等离子体产生室耦合到室，外部等离子体发生室被配置为将等离子体副产物引入下部工艺区域，以及向外部等离子体产生室供应聚合物蚀刻前体气体。天花板包括面向上处理区的气体分配板，反应器还包括连接到气体分配板的净化气体供应源。

32. 发明授权

US06694915B1 Plasma reactor having a symmetrical parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06694915B1
公开(公告)日：2004-02-24
申请号：US09611170
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors.
摘要翻译：在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

33. 发明申请

US20080179290A1 TEMPERATURE-SWITCHED PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND FRONT SIDE PHOTORESIST STRIP 审中-公开
标题翻译：用于后置聚合物去离子和前侧光电隔离带的温度切换过程
公开(公告)号：US20080179290A1
公开(公告)日：2008-07-31
申请号：US11685915
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.
摘要翻译：工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙，间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。

34. 发明申请

US20080179288A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND WAFER FRONT SIDE SCAVENGER PLASMA 审中-公开
标题翻译： WAFER背面聚合物去除方法和WAFER FRONT SIDE SCAVENGER PLASMA
公开(公告)号：US20080179288A1
公开(公告)日：2008-07-31
申请号：US11685767
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/0206 , H01L21/67115 , H01L21/68728 , H01L21/68735 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界和一个含有背面的下部工艺区。在来自聚合物蚀刻前体气体的下部外部室中产生第一等离子体，并且将蚀刻剂副产物从第一等离子体引入下部工艺区域。在来自蚀刻剂副产物的清除剂的前体气体的上部外部等离子体室中产生第二等离子体，并且清除剂物质从第二等离子体引入上部工艺区域。

35. 发明申请

US20080179009A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL HAVING AN ETCH PLASMA JET STREAM SOURCE 失效
标题翻译：用于离子聚合物去离子的反应器具有等离子体喷射流动源
公开(公告)号：US20080179009A1
公开(公告)日：2008-07-31
申请号：US11685775
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. The reactor further includes a local plasma-generating chamber and a nozzle disposed on a side of the workpiece support apparatus that is opposite a support surface of the workpiece support apparatus where the workpiece is to reside, the nozzle coupled to receive plasma from the local plasma-generating chamber. The nozzle is directed at a target area of the annular periphery so as to direct a plasma stream at the workpiece backside. A supply of a polymer etch precursor gas is coupled to the local plasma-generating chamber. A rotation actuator rotates the workpiece support apparatus relative to the nozzle.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面对天花板。支撑装置离开被暴露的工件的背面的至少一个环形周边。约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间划分室的边界区。真空泵联接到下部处理区。反应器还包括局部等离子体产生室和设置在工件支撑装置的与工件所在的工件支撑装置的支撑表面相对的一侧的喷嘴，喷嘴被连接以接收来自局部等离子体的等离子体生成室。喷嘴指向环形周边的目标区域，以便在工件背面引导等离子体流。聚合物蚀刻前体气体的供应物连接到局部等离子体产生室。旋转致动器相对于喷嘴旋转工件支撑装置。

36. 发明申请

US20080178913A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A RING OF PLASMA UNDER THE WAFER 审中-公开
标题翻译：用WAFER的等离子体环拆除背面聚合物的方法
公开(公告)号：US20080178913A1
公开(公告)日：2008-07-31
申请号：US11685902
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： B08B7/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.
摘要翻译：提供了从工件的背面除去聚合物的方法。该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界侧面和下部工艺区域，其中包含晶片背面。该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体工件的后边缘。

37. 发明授权

US06472822B1 Pulsed RF power delivery for plasma processing 失效
标题翻译：用于等离子体处理的脉冲射频功率输送
公开(公告)号：US06472822B1
公开(公告)日：2002-10-29
申请号：US09560108
申请日：2000-04-28
申请人： Jin-Yuan Chen , John P. Holland , Arthur H. Sato , Valentin N. Todorow
发明人： Jin-Yuan Chen , John P. Holland , Arthur H. Sato , Valentin N. Todorow
IPC分类号： H05H146
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A system and method for overcoming the above-described problems relating to the delivery of pulsed RF power to a plasma processing chamber. The power reflected from the chamber is reduced using one or more of the following techniques: (1) varying the RF frequency within a pulse period; (2) ramping up the pulse heights at the leading edge of the pulse train; (3) simultaneously transmitting a relatively low CW signal along with the pulsed signal; and (4) rapidly switching the shunt capacitance within a local matching network within a pulse period. The amount of power delivered to the plasma by the pulses is measured by way of a time-averaging mechanism coupled to a directional coupler connected to the transmission line. The time-averaging mechanism may comprise circuitry to measure temperatures of loads attached to the directional coupler, or analog integrating circuitry attached to the directional coupler, or digital integrating circuitry attached to the directional coupler.
摘要翻译：一种用于克服与脉冲RF功率传递到等离子体处理室相关的上述问题的系统和方法。使用以下一种或多种技术来减小从腔室反射的功率：（1）在脉冲周期内改变RF频率; （2）在脉冲串前缘上升高脉冲高度; （3）同时发送相对较低的CW信号以及脉冲信号; 和（4）在脉冲周期内快速切换局部匹配网络内的并联电容。通过连接到连接到传输线的定向耦合器的时间平均机制来测量由脉冲输送到等离子体的功率量。时间平均机构可以包括用于测量附接到定向耦合器的负载的温度或者连接到定向耦合器的模拟积分电路或附接到定向耦合器的数字积分电路的电路。

38. 发明授权

US08349128B2 Method and apparatus for stable plasma processing 有权
标题翻译：稳定等离子体处理的方法和装置
公开(公告)号：US08349128B2
公开(公告)日：2013-01-08
申请号：US10880754
申请日：2004-06-30
申请人： Valentin N. Todorow , John P. Holland , Michael D. Willwerth
发明人： Valentin N. Todorow , John P. Holland , Michael D. Willwerth
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23F4/00 , C23F1/08 , H01J37/321 , H01J37/32633 , H01L21/67069
摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.
摘要翻译：本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。将基板放置在基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

39. 发明授权

US07967996B2 Process for wafer backside polymer removal and wafer front side photoresist removal 失效
标题翻译：用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
公开(公告)号：US07967996B2
公开(公告)日：2011-06-28
申请号：US11801409
申请日：2007-05-08
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
IPC分类号： B44C1/22
CPC分类号： B08B7/00 , B08B7/0035 , H01J37/32357 , H01J37/3244 , H01L21/0206 , H01L21/02063 , H01L21/0209 , H01L21/67069 , H01L21/67115 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
摘要翻译：提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物到晶圆背面。对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂。

40. 发明申请

US20110005685A1 PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
标题翻译：具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径
公开(公告)号：US20110005685A1
公开(公告)日：2011-01-13
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23F1/08 , C23C16/503
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

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